ATE473518T1 - Verfahren zur herstellung von dünnschichtbauelementen für solarzellen oder soi- anwendungen - Google Patents

Verfahren zur herstellung von dünnschichtbauelementen für solarzellen oder soi- anwendungen

Info

Publication number
ATE473518T1
ATE473518T1 AT03447188T AT03447188T ATE473518T1 AT E473518 T1 ATE473518 T1 AT E473518T1 AT 03447188 T AT03447188 T AT 03447188T AT 03447188 T AT03447188 T AT 03447188T AT E473518 T1 ATE473518 T1 AT E473518T1
Authority
AT
Austria
Prior art keywords
solar cells
producing thin
film components
thin film
soi applications
Prior art date
Application number
AT03447188T
Other languages
English (en)
Inventor
Chetan Singh Solanki
Renat Bilyalov
Jef Poortmans
Original Assignee
Imec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec filed Critical Imec
Application granted granted Critical
Publication of ATE473518T1 publication Critical patent/ATE473518T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
AT03447188T 2002-07-24 2003-07-18 Verfahren zur herstellung von dünnschichtbauelementen für solarzellen oder soi- anwendungen ATE473518T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02447146A EP1385199A1 (de) 2002-07-24 2002-07-24 Verfahren zur Herstellung von Dünnfilmelementen für Solarzellen oder SOI Anwendungen

Publications (1)

Publication Number Publication Date
ATE473518T1 true ATE473518T1 (de) 2010-07-15

Family

ID=29797373

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03447188T ATE473518T1 (de) 2002-07-24 2003-07-18 Verfahren zur herstellung von dünnschichtbauelementen für solarzellen oder soi- anwendungen

Country Status (5)

Country Link
US (2) US7022585B2 (de)
EP (1) EP1385199A1 (de)
AT (1) ATE473518T1 (de)
DE (1) DE60333245D1 (de)
ES (1) ES2347141T3 (de)

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US8399331B2 (en) 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
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US7999174B2 (en) * 2006-10-09 2011-08-16 Solexel, Inc. Solar module structures and assembly methods for three-dimensional thin-film solar cells
US8193076B2 (en) 2006-10-09 2012-06-05 Solexel, Inc. Method for releasing a thin semiconductor substrate from a reusable template
US20100304521A1 (en) * 2006-10-09 2010-12-02 Solexel, Inc. Shadow Mask Methods For Manufacturing Three-Dimensional Thin-Film Solar Cells
US8512581B2 (en) * 2006-10-09 2013-08-20 Solexel, Inc. Methods for liquid transfer coating of three-dimensional substrates
US8293558B2 (en) * 2006-10-09 2012-10-23 Solexel, Inc. Method for releasing a thin-film substrate
US8168465B2 (en) 2008-11-13 2012-05-01 Solexel, Inc. Three-dimensional semiconductor template for making high efficiency thin-film solar cells
US8084684B2 (en) * 2006-10-09 2011-12-27 Solexel, Inc. Three-dimensional thin-film solar cells
US8035028B2 (en) * 2006-10-09 2011-10-11 Solexel, Inc. Pyramidal three-dimensional thin-film solar cells
US20100144080A1 (en) * 2008-06-02 2010-06-10 Solexel, Inc. Method and apparatus to transfer coat uneven surface
US20100108130A1 (en) * 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin Interdigitated backside contact solar cell and manufacturing process thereof
US8288195B2 (en) * 2008-11-13 2012-10-16 Solexel, Inc. Method for fabricating a three-dimensional thin-film semiconductor substrate from a template
MY160251A (en) * 2008-11-26 2017-02-28 Solexel Inc Truncated pyramid -structures for see-through solar cells
US9076642B2 (en) 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
US8906218B2 (en) 2010-05-05 2014-12-09 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
JP2012515453A (ja) * 2009-01-15 2012-07-05 ソレクセル、インコーポレイテッド 多孔質シリコン電解エッチングシステム及び方法
MY162405A (en) * 2009-02-06 2017-06-15 Solexel Inc Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template
WO2010102013A2 (en) * 2009-03-03 2010-09-10 Akrion Systems Llc Method for selective under-etching of porous silicon
US8828517B2 (en) 2009-03-23 2014-09-09 Solexel, Inc. Structure and method for improving solar cell efficiency and mechanical strength
EP2419306B1 (de) * 2009-04-14 2016-03-30 Solexel, Inc. Hochleistungsreaktor für epitaktische gasphasenabscheidung (cvd)
US9099584B2 (en) * 2009-04-24 2015-08-04 Solexel, Inc. Integrated three-dimensional and planar metallization structure for thin film solar cells
WO2010129719A1 (en) 2009-05-05 2010-11-11 Solexel, Inc. High-productivity porous semiconductor manufacturing equipment
US9318644B2 (en) 2009-05-05 2016-04-19 Solexel, Inc. Ion implantation and annealing for thin film crystalline solar cells
US8445314B2 (en) * 2009-05-22 2013-05-21 Solexel, Inc. Method of creating reusable template for detachable thin film substrate
MY159405A (en) * 2009-05-29 2016-12-30 Solexel Inc Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing
US8703521B2 (en) * 2009-06-09 2014-04-22 International Business Machines Corporation Multijunction photovoltaic cell fabrication
US20110048517A1 (en) * 2009-06-09 2011-03-03 International Business Machines Corporation Multijunction Photovoltaic Cell Fabrication
US20100310775A1 (en) * 2009-06-09 2010-12-09 International Business Machines Corporation Spalling for a Semiconductor Substrate
US8633097B2 (en) 2009-06-09 2014-01-21 International Business Machines Corporation Single-junction photovoltaic cell
US8802477B2 (en) * 2009-06-09 2014-08-12 International Business Machines Corporation Heterojunction III-V photovoltaic cell fabrication
DE102009053262A1 (de) * 2009-11-13 2011-05-19 Institut Für Solarenergieforschung Gmbh Verfahren zum Bilden von dünnen Halbleiterschichtsubstraten sowie Verfahren zum Herstellen eines Halbleiterbauelements, insbesondere einer Solarzelle, mit einem solchen Halbleiterschichtsubstrat
WO2011064368A1 (en) 2009-11-30 2011-06-03 Imec Method for manufacturing photovoltaic modules comprising back-contact cells
FR2953328B1 (fr) * 2009-12-01 2012-03-30 S O I Tec Silicon On Insulator Tech Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
US20130167915A1 (en) 2009-12-09 2013-07-04 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using three-dimensional semiconductor absorbers
US8241940B2 (en) 2010-02-12 2012-08-14 Solexel, Inc. Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing
US9870937B2 (en) 2010-06-09 2018-01-16 Ob Realty, Llc High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space
WO2013055307A2 (en) 2010-08-05 2013-04-18 Solexel, Inc. Backplane reinforcement and interconnects for solar cells
DE102011002649A1 (de) 2011-01-13 2012-07-19 Martin-Luther-Universität Halle-Wittenberg Halbleiterbauelement und Verfahren zu seiner Herstellung
EP2710639A4 (de) 2011-05-20 2015-11-25 Solexel Inc Selbstaktivierte vorderseiten-vorspannung für eine solarzelle
US9735126B2 (en) * 2011-06-07 2017-08-15 Infineon Technologies Ag Solder alloys and arrangements
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JP3492142B2 (ja) 1997-03-27 2004-02-03 キヤノン株式会社 半導体基材の製造方法
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JP2001094136A (ja) * 1999-09-22 2001-04-06 Canon Inc 半導体素子モジュールの製造方法および太陽電池モジュールの製造方法
EP1132952B1 (de) * 2000-03-10 2016-11-23 Imec Verfahren zur Herstellung und Abhebung von einer porösen Siliziumschicht
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EP1385199A1 (de) * 2002-07-24 2004-01-28 IMEC vzw, Interuniversitair Microelectronica Centrum vzw Verfahren zur Herstellung von Dünnfilmelementen für Solarzellen oder SOI Anwendungen

Also Published As

Publication number Publication date
US20060184266A1 (en) 2006-08-17
US7022585B2 (en) 2006-04-04
DE60333245D1 (de) 2010-08-19
US20050020032A1 (en) 2005-01-27
EP1385199A1 (de) 2004-01-28
ES2347141T3 (es) 2010-10-26

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