ATE468616T1 - Verbesserung der kritischen stromdichte in supraleitendem nb3sn-draht - Google Patents

Verbesserung der kritischen stromdichte in supraleitendem nb3sn-draht

Info

Publication number
ATE468616T1
ATE468616T1 AT05812494T AT05812494T ATE468616T1 AT E468616 T1 ATE468616 T1 AT E468616T1 AT 05812494 T AT05812494 T AT 05812494T AT 05812494 T AT05812494 T AT 05812494T AT E468616 T1 ATE468616 T1 AT E468616T1
Authority
AT
Austria
Prior art keywords
critical current
barrier
improvement
current density
wire
Prior art date
Application number
AT05812494T
Other languages
English (en)
Inventor
Michael Field
Jeff Parrell
Youzhu Zhang
Seungok Hong
Original Assignee
Oxford Superconducting Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford Superconducting Technology filed Critical Oxford Superconducting Technology
Application granted granted Critical
Publication of ATE468616T1 publication Critical patent/ATE468616T1/de

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B12/00Superconductive or hyperconductive conductors, cables, or transmission lines
    • H01B12/02Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0128Manufacture or treatment of composite superconductor filaments
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0156Manufacture or treatment of devices comprising Nb or an alloy of Nb with one or more of the elements of group IVB, e.g. titanium, zirconium or hafnium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0184Manufacture or treatment of devices comprising intermetallic compounds of type A-15, e.g. Nb3Sn
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/20Permanent superconducting devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49014Superconductor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
AT05812494T 2004-02-19 2005-02-22 Verbesserung der kritischen stromdichte in supraleitendem nb3sn-draht ATE468616T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54595804P 2004-02-19 2004-02-19
PCT/US2005/005368 WO2006038909A2 (en) 2004-02-19 2005-02-22 IMPROVING CRITICAL DENSITY IN Nb3Sn SUPERCONDUCTING WIRE

Publications (1)

Publication Number Publication Date
ATE468616T1 true ATE468616T1 (de) 2010-06-15

Family

ID=36142942

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05812494T ATE468616T1 (de) 2004-02-19 2005-02-22 Verbesserung der kritischen stromdichte in supraleitendem nb3sn-draht

Country Status (8)

Country Link
US (1) US7368021B2 (de)
EP (1) EP1719190B1 (de)
JP (1) JP4728260B2 (de)
KR (1) KR101150745B1 (de)
CN (1) CN1972758B (de)
AT (1) ATE468616T1 (de)
DE (1) DE602005021319D1 (de)
WO (1) WO2006038909A2 (de)

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US9680081B2 (en) * 2011-11-22 2017-06-13 National Institute For Material Science Precursor wire for Nb3Al superconducting wire, Nb3Al superconducting wire, method for producing precursor wire for Nb3Al superconducting wire, and method for producing Nb3Al superconducting wire
DE102012218222B4 (de) 2012-10-05 2020-10-15 Bruker Eas Gmbh Halbzeugdraht für einen Nb3Sn-Supraleiterdraht und Verfahren zur Herstellung eines Nb3Sn-Supraleiterdrahts
CN102992412A (zh) * 2012-11-30 2013-03-27 江苏威纳德照明科技有限公司 一种含有硅和碳的Nb3Sn的制备方法
CN106170464B (zh) * 2014-02-18 2020-07-28 俄亥俄州立大学 超导线及其制备方法
EP2980804A1 (de) * 2014-07-31 2016-02-03 Basf Se Vorprodukt sowie Verfahren zur Herstellung eines bandförmigen Hochtemperatursupraleiters
US10573435B2 (en) * 2016-01-29 2020-02-25 Bruker Ost Llc Method for producing a multifilament Nb3Sn superconducting wire
US11574749B2 (en) 2016-09-06 2023-02-07 Materion Newton Inc. Diffusion barriers for metallic superconducting wires
KR102205386B1 (ko) 2016-09-06 2021-01-19 에이치. 씨. 스타아크 아이앤씨 금속성 초전도성 와이어에 대한 확산 배리어
EP3355373B1 (de) 2017-01-25 2021-03-03 Bruker OST LLC Verbesserung der kritischen strangstromdichte in supraleitenden nb3sn-strängen über eine neuartige wärmebehandlung
CN109961901B (zh) * 2017-12-25 2021-06-01 西部超导材料科技股份有限公司 一种多芯高锡青铜/Nb复合棒的制备方法
JP2019186167A (ja) * 2018-04-17 2019-10-24 株式会社神戸製鋼所 Nb3Sn超電導線材の前駆体及びNb3Sn超電導線材
KR101879223B1 (ko) * 2018-04-19 2018-07-17 (주)해양정보기술 도화이미지 좌표정보를 신속하게 합성하는 수치지도 생성시스템
CN110556213A (zh) * 2018-06-04 2019-12-10 西部超导材料科技股份有限公司 一种提高Nb3Sn超导复合线性能的复合棒制备方法
WO2020087069A2 (en) * 2018-10-26 2020-04-30 University Of Houston System Round superconductor wires
CN109440037A (zh) * 2018-11-15 2019-03-08 中国科学院合肥物质科学研究院 一种大型Nb3Sn超导线圈的热处理工艺
CN110211741B (zh) * 2018-12-30 2021-04-20 西部超导材料科技股份有限公司 一种Ta增强的青铜法Nb3Sn超导线的制备方法
DE102019204926A1 (de) * 2019-04-05 2020-10-08 Bruker Eas Gmbh Fertigleiter-Anordnung für einen Nb3Sn-Supraleiterdraht und Verfahren zur Herstellung eines Subelements für einen Nb3Sn-Supraleiterdraht
CN114649115B (zh) * 2022-05-23 2022-09-09 西部超导材料科技股份有限公司 一种双Sn来源式Nb3Sn超导线材的制备方法
CN115295242B (zh) * 2022-09-30 2023-01-24 西部超导材料科技股份有限公司 高临界电流密度的铌三锡超导股线的制备方法
DE102024109846A1 (de) 2024-04-09 2025-10-09 Bruker Eas Gmbh Subelement für einen Halbzeugdraht zur Herstellung eines Nb3Sn-Supraleiterdrahts

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Also Published As

Publication number Publication date
EP1719190A4 (de) 2009-09-30
DE602005021319D1 (de) 2010-07-01
KR20060135824A (ko) 2006-12-29
WO2006038909A2 (en) 2006-04-13
CN1972758A (zh) 2007-05-30
CN1972758B (zh) 2010-11-03
US7368021B2 (en) 2008-05-06
EP1719190B1 (de) 2010-05-19
JP2007524210A (ja) 2007-08-23
EP1719190A2 (de) 2006-11-08
WO2006038909A3 (en) 2006-12-21
US20060081307A1 (en) 2006-04-20
JP4728260B2 (ja) 2011-07-20
KR101150745B1 (ko) 2012-06-08

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