ATE453309T1 - Euv-quelle - Google Patents

Euv-quelle

Info

Publication number
ATE453309T1
ATE453309T1 AT04292256T AT04292256T ATE453309T1 AT E453309 T1 ATE453309 T1 AT E453309T1 AT 04292256 T AT04292256 T AT 04292256T AT 04292256 T AT04292256 T AT 04292256T AT E453309 T1 ATE453309 T1 AT E453309T1
Authority
AT
Austria
Prior art keywords
radiation
chamber
turbomolecular pumps
source
diaphragm
Prior art date
Application number
AT04292256T
Other languages
German (de)
English (en)
Inventor
Benoit Barthod
Jean-Luc Rival
Matthieu Morpain
Original Assignee
Alcatel Lucent
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Lucent filed Critical Alcatel Lucent
Application granted granted Critical
Publication of ATE453309T1 publication Critical patent/ATE453309T1/de

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0086—Optical arrangements for conveying the laser beam to the plasma generation location

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
AT04292256T 2003-09-26 2004-09-20 Euv-quelle ATE453309T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0311280A FR2860385B1 (fr) 2003-09-26 2003-09-26 Source euv

Publications (1)

Publication Number Publication Date
ATE453309T1 true ATE453309T1 (de) 2010-01-15

Family

ID=34307180

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04292256T ATE453309T1 (de) 2003-09-26 2004-09-20 Euv-quelle

Country Status (6)

Country Link
US (1) US7095038B2 (enExample)
EP (1) EP1528846B1 (enExample)
JP (1) JP4690686B2 (enExample)
AT (1) ATE453309T1 (enExample)
DE (1) DE602004024754D1 (enExample)
FR (1) FR2860385B1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7439530B2 (en) 2005-06-29 2008-10-21 Cymer, Inc. LPP EUV light source drive laser system
US7034320B2 (en) * 2003-03-20 2006-04-25 Intel Corporation Dual hemispherical collectors
JP2005190904A (ja) * 2003-12-26 2005-07-14 Ushio Inc 極端紫外光源
US7482609B2 (en) 2005-02-28 2009-01-27 Cymer, Inc. LPP EUV light source drive laser system
KR101396158B1 (ko) 2006-05-16 2014-05-19 코닌클리케 필립스 엔.브이. Ｅｕｖ 램프 및 연질 ｘ-선 램프의 전환 효율을 증가시키는 방법, 및 ｅｕｖ 방사선 및 연질 ｘ-선을 생성하는 장치
US7655925B2 (en) 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
JP2011503869A (ja) * 2007-11-08 2011-01-27 エーエスエムエル ネザーランズ ビー．ブイ． 放射システムおよび方法、ならびにスペクトル純度フィルタ
EP2083328B1 (en) * 2008-01-28 2013-06-19 Media Lario s.r.l. Grazing incidence collector for laser produced plasma sources
EP2182412A1 (en) * 2008-11-04 2010-05-05 ASML Netherlands B.V. Radiation source and lithographic apparatus
US8330131B2 (en) * 2010-01-11 2012-12-11 Media Lario, S.R.L. Source-collector module with GIC mirror and LPP EUV light source
WO2012177900A1 (en) 2011-06-22 2012-12-27 Research Triangle Institute, International Bipolar microelectronic device
WO2013141578A1 (ko) * 2012-03-20 2013-09-26 주식회사 에프에스티 플라즈마를 이용한 극자외선 발생장치
NL2010965A (en) 2012-06-22 2013-12-24 Asml Netherlands Bv Radiation source and lithographic apparatus.
US10880979B2 (en) 2015-11-10 2020-12-29 Kla Corporation Droplet generation for a laser produced plasma light source
US9918375B2 (en) * 2015-11-16 2018-03-13 Kla-Tencor Corporation Plasma based light source having a target material coated on a cylindrically-symmetric element
US10021773B2 (en) 2015-11-16 2018-07-10 Kla-Tencor Corporation Laser produced plasma light source having a target material coated on a cylindrically-symmetric element
KR102024760B1 (ko) * 2018-01-18 2019-09-25 한국원자력연구원 빔집속장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01137543A (ja) * 1987-11-24 1989-05-30 Fujitsu Ltd レーザ励起ｘ線発生装置
JPH0837096A (ja) * 1994-07-26 1996-02-06 Nikon Corp Ｘ線発生装置
JPH10221499A (ja) * 1997-02-07 1998-08-21 Hitachi Ltd レーザプラズマｘ線源およびそれを用いた半導体露光装置並びに半導体露光方法
US6541786B1 (en) * 1997-05-12 2003-04-01 Cymer, Inc. Plasma pinch high energy with debris collector
JP2000089000A (ja) * 1998-09-14 2000-03-31 Nikon Corp Ｘ線発生装置
DE19962160C2 (de) * 1999-06-29 2003-11-13 Fraunhofer Ges Forschung Vorrichtungen zur Erzeugung von Extrem-Ultraviolett- und weicher Röntgenstrahlung aus einer Gasentladung
US6304630B1 (en) * 1999-12-24 2001-10-16 U.S. Philips Corporation Method of generating EUV radiation, method of manufacturing a device by means of said radiation, EUV radiation source unit, and lithographic projection apparatus provided with such a radiation source unit
JP4351413B2 (ja) * 2002-03-05 2009-10-28 望月 孝晏 レーザプラズマｘ線発生装置
DE10251435B3 (de) * 2002-10-30 2004-05-27 Xtreme Technologies Gmbh Strahlungsquelle zur Erzeugung von extrem ultravioletter Strahlung

Also Published As

Publication number Publication date
DE602004024754D1 (de) 2010-02-04
EP1528846B1 (fr) 2009-12-23
FR2860385B1 (fr) 2007-06-01
JP2005108834A (ja) 2005-04-21
US7095038B2 (en) 2006-08-22
EP1528846A2 (fr) 2005-05-04
US20050072942A1 (en) 2005-04-07
JP4690686B2 (ja) 2011-06-01
EP1528846A3 (fr) 2005-06-08
FR2860385A1 (fr) 2005-04-01

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties