ATE441652T1 - Flüchtige ketoiminat- und diiminat-metallkomplexe - Google Patents
Flüchtige ketoiminat- und diiminat-metallkomplexeInfo
- Publication number
- ATE441652T1 ATE441652T1 AT05028247T AT05028247T ATE441652T1 AT E441652 T1 ATE441652 T1 AT E441652T1 AT 05028247 T AT05028247 T AT 05028247T AT 05028247 T AT05028247 T AT 05028247T AT E441652 T1 ATE441652 T1 AT E441652T1
- Authority
- AT
- Austria
- Prior art keywords
- ketoiminate
- metal
- diiminate
- volatile
- metal complexes
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title abstract 5
- 239000002184 metal Substances 0.000 title abstract 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 abstract 1
- 238000000231 atomic layer deposition Methods 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052762 osmium Inorganic materials 0.000 abstract 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000002243 precursor Substances 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000010948 rhodium Substances 0.000 abstract 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052707 ruthenium Inorganic materials 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/08—Copper compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/10—Silver compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/12—Gold compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US64033804P | 2004-12-30 | 2004-12-30 | |
| US11/111,452 US7205422B2 (en) | 2004-12-30 | 2005-04-21 | Volatile metal β-ketoiminate and metal β-diiminate complexes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE441652T1 true ATE441652T1 (de) | 2009-09-15 |
Family
ID=35994647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05028247T ATE441652T1 (de) | 2004-12-30 | 2005-12-22 | Flüchtige ketoiminat- und diiminat-metallkomplexe |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7205422B2 (de) |
| EP (1) | EP1676850B1 (de) |
| JP (2) | JP4643452B2 (de) |
| KR (2) | KR100824913B1 (de) |
| AT (1) | ATE441652T1 (de) |
| DE (1) | DE602005016361D1 (de) |
| TW (1) | TWI307723B (de) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7323581B1 (en) | 1990-07-06 | 2008-01-29 | Advanced Technology Materials, Inc. | Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition |
| US7964031B2 (en) * | 2000-06-06 | 2011-06-21 | Dow Corning Corporation | Compositions for treating materials and methods of treating same |
| ES2313964T3 (es) * | 2000-06-06 | 2009-03-16 | Woodholdings Environmental, Inc. | Composiciones conservantes para productos de madera. |
| US8721783B2 (en) * | 2000-06-06 | 2014-05-13 | Dow Corning Corporation | Compositions for treating materials and methods of treating same |
| US7192470B2 (en) * | 2003-05-27 | 2007-03-20 | Woodholdings Environmental, Inc. | Preservative compositions for materials and method of preserving same |
| US6960675B2 (en) * | 2003-10-14 | 2005-11-01 | Advanced Technology Materials, Inc. | Tantalum amide complexes for depositing tantalum-containing films, and method of making same |
| US7205422B2 (en) * | 2004-12-30 | 2007-04-17 | Air Products And Chemicals, Inc. | Volatile metal β-ketoiminate and metal β-diiminate complexes |
| US7947814B2 (en) | 2006-04-25 | 2011-05-24 | Air Products And Chemicals, Inc. | Metal complexes of polydentate beta-ketoiminates |
| US7605078B2 (en) * | 2006-09-29 | 2009-10-20 | Tokyo Electron Limited | Integration of a variable thickness copper seed layer in copper metallization |
| US8795771B2 (en) | 2006-10-27 | 2014-08-05 | Sean T. Barry | ALD of metal-containing films using cyclopentadienyl compounds |
| US7778063B2 (en) * | 2006-11-08 | 2010-08-17 | Symetrix Corporation | Non-volatile resistance switching memories and methods of making same |
| US20080107801A1 (en) * | 2006-11-08 | 2008-05-08 | Symetrix Corporation | Method of making a variable resistance memory |
| US20080276970A1 (en) * | 2007-05-09 | 2008-11-13 | John Christopher Cameron | Apparatus and method for treating materials with compositions |
| US8283485B2 (en) * | 2007-06-21 | 2012-10-09 | Air Products And Chemicals, Inc. | Process for selectively depositing copper thin films on substrates with copper and ruthenium areas via vapor deposition |
| EP2014790A1 (de) * | 2007-06-21 | 2009-01-14 | Air Products and Chemicals, Inc. | Verfahren zur Herstellung von deckenden Kupferdünnfilmen mittels Aufdampfung |
| EP2060577B1 (de) | 2007-11-05 | 2013-08-21 | Air Products and Chemicals, Inc. | Kupfervorstufen für Dünnschichtauftragung |
| US8263795B2 (en) * | 2007-11-05 | 2012-09-11 | Air Products And Chemicals, Inc. | Copper precursors for thin film deposition |
| US7691984B2 (en) | 2007-11-27 | 2010-04-06 | Air Products And Chemicals, Inc. | Metal complexes of tridentate β-ketoiminates |
| DE102007058571B4 (de) * | 2007-12-05 | 2012-02-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrat mit einer Kupfer enthaltenden Beschichtung und Verfahren zu deren Herstellung mittels Atomic Layer Deposition und Verwendung des Verfahrens |
| EP2288626A4 (de) * | 2008-05-19 | 2013-10-16 | Univ California | Durch ketondiiminliganden unterstützte übergangsmetallinitiatoren für die homopolymerisation von olefinen und die copolymerisation von olefinen mit polaren comonomeren |
| TW200951241A (en) * | 2008-05-30 | 2009-12-16 | Sigma Aldrich Co | Methods of forming ruthenium-containing films by atomic layer deposition |
| US7919409B2 (en) * | 2008-08-15 | 2011-04-05 | Air Products And Chemicals, Inc. | Materials for adhesion enhancement of copper film on diffusion barriers |
| US9528182B2 (en) * | 2009-06-22 | 2016-12-27 | Arkema Inc. | Chemical vapor deposition using N,O polydentate ligand complexes of metals |
| US9079923B2 (en) | 2010-08-05 | 2015-07-14 | Air Products And Chemicals, Inc. | Multidentate ketoimine ligands for metal complexes |
| US20130143402A1 (en) * | 2010-08-20 | 2013-06-06 | Nanmat Technology Co., Ltd. | Method of forming Cu thin film |
| CA2823754C (en) | 2011-01-18 | 2018-07-03 | Dow Corning Corporation | Method for treating substrates with halosilanes |
| US8617305B2 (en) | 2011-01-25 | 2013-12-31 | Air Products And Chemicals, Inc. | Metal complexes for metal-containing film deposition |
| KR102168174B1 (ko) | 2014-03-19 | 2020-10-20 | 삼성전자주식회사 | 니켈 화합물 및 이를 이용한 박막 형성 방법 |
| CN104264123B (zh) * | 2014-09-19 | 2015-04-22 | 中南民族大学 | 一种用于催化甲醇合成反应的CuNi合金薄膜的原子层沉积制备方法 |
| KR20160062675A (ko) | 2014-11-25 | 2016-06-02 | (주)마이크로켐 | 신규 니켈-비스베타케토이미네이트 전구체 및 이를 이용한 니켈 함유 필름 증착방법 |
| CN111655659B (zh) * | 2018-02-02 | 2023-03-28 | 关东电化工业株式会社 | 具有包含氢且包含氟和/或氯的丁二烯骨架的化合物的制造方法 |
| CN111655899A (zh) | 2018-02-12 | 2020-09-11 | 默克专利有限公司 | 使用无氧共反应物气相沉积钌的方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5098516A (en) * | 1990-12-31 | 1992-03-24 | Air Products And Chemicals, Inc. | Processes for the chemical vapor deposition of copper and etching of copper |
| JP3079814B2 (ja) | 1992-11-11 | 2000-08-21 | 三菱マテリアル株式会社 | 銅膜形成用材料 |
| DE4305453A1 (de) * | 1993-02-23 | 1994-08-25 | Bayer Ag | Reaktivfarbstoffblaumischungen mit verbesserter Metamerie |
| KR20000013302A (ko) * | 1998-08-06 | 2000-03-06 | 최형수 | 화학 증착법을 위한 유기 구리 전구체 |
| US6589329B1 (en) | 2000-03-09 | 2003-07-08 | Advanced Technology Materials, Inc. | Composition and process for production of copper circuitry in microelectronic device structures |
| US6642401B2 (en) | 2000-03-14 | 2003-11-04 | Nissan Chemical Industries, Ltd. | β-diketonatocopper(I) complex containing allene compounds as ligand and process for producing the same |
| US20020013487A1 (en) * | 2000-04-03 | 2002-01-31 | Norman John Anthony Thomas | Volatile precursors for deposition of metals and metal-containing films |
| JP4660924B2 (ja) | 2000-12-25 | 2011-03-30 | 東ソー株式会社 | 安定化された銅錯体及びその製造方法 |
| WO2003044242A2 (en) * | 2001-11-16 | 2003-05-30 | Applied Materials, Inc. | Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors |
| US6552209B1 (en) * | 2002-06-24 | 2003-04-22 | Air Products And Chemicals, Inc. | Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films |
| DE10229040A1 (de) * | 2002-06-28 | 2004-01-29 | Solvay Barium Strontium Gmbh | Neue Erdalkalimetallkomplexe und ihre Verwendung |
| US6869876B2 (en) * | 2002-11-05 | 2005-03-22 | Air Products And Chemicals, Inc. | Process for atomic layer deposition of metal films |
| US20050227007A1 (en) * | 2004-04-08 | 2005-10-13 | Bradley Alexander Z | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
| US20040247905A1 (en) | 2003-04-16 | 2004-12-09 | Bradley Alexander Zak | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
| US7034169B1 (en) * | 2004-12-30 | 2006-04-25 | Air Products And Chemicals, Inc. | Volatile metal β-ketoiminate complexes |
| US7205422B2 (en) * | 2004-12-30 | 2007-04-17 | Air Products And Chemicals, Inc. | Volatile metal β-ketoiminate and metal β-diiminate complexes |
-
2005
- 2005-04-21 US US11/111,452 patent/US7205422B2/en active Active
- 2005-12-22 DE DE602005016361T patent/DE602005016361D1/de active Active
- 2005-12-22 AT AT05028247T patent/ATE441652T1/de not_active IP Right Cessation
- 2005-12-22 EP EP05028247A patent/EP1676850B1/de not_active Not-in-force
- 2005-12-27 TW TW094146815A patent/TWI307723B/zh active
- 2005-12-30 KR KR1020050135026A patent/KR100824913B1/ko active IP Right Grant
-
2006
- 2006-01-04 JP JP2006000042A patent/JP4643452B2/ja not_active Expired - Fee Related
-
2007
- 2007-06-18 KR KR1020070059393A patent/KR20070074516A/ko not_active Application Discontinuation
-
2010
- 2010-03-10 JP JP2010053435A patent/JP2010180221A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP4643452B2 (ja) | 2011-03-02 |
| KR20070074516A (ko) | 2007-07-12 |
| US20060145142A1 (en) | 2006-07-06 |
| US7205422B2 (en) | 2007-04-17 |
| EP1676850A1 (de) | 2006-07-05 |
| KR20060093012A (ko) | 2006-08-23 |
| JP2010180221A (ja) | 2010-08-19 |
| JP2006193523A (ja) | 2006-07-27 |
| TW200622025A (en) | 2006-07-01 |
| EP1676850B1 (de) | 2009-09-02 |
| KR100824913B1 (ko) | 2008-04-23 |
| TWI307723B (en) | 2009-03-21 |
| DE602005016361D1 (de) | 2009-10-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |