ATE431612T1 - Schaltung und verfahren zur steuerung einer taktsynchronisationsschaltung für eine low-power- auffrischoperation - Google Patents

Schaltung und verfahren zur steuerung einer taktsynchronisationsschaltung für eine low-power- auffrischoperation

Info

Publication number
ATE431612T1
ATE431612T1 AT04789283T AT04789283T ATE431612T1 AT E431612 T1 ATE431612 T1 AT E431612T1 AT 04789283 T AT04789283 T AT 04789283T AT 04789283 T AT04789283 T AT 04789283T AT E431612 T1 ATE431612 T1 AT E431612T1
Authority
AT
Austria
Prior art keywords
refresh operation
circuit
controlling
low power
clock synchronization
Prior art date
Application number
AT04789283T
Other languages
English (en)
Inventor
Aaron Schoenfeld
Ross Dermott
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34422918&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE431612(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE431612T1 publication Critical patent/ATE431612T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4061—Calibration or ate or cycle tuning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4067—Refresh in standby or low power modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Transmitters (AREA)
AT04789283T 2003-10-09 2004-09-29 Schaltung und verfahren zur steuerung einer taktsynchronisationsschaltung für eine low-power- auffrischoperation ATE431612T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/684,123 US6975556B2 (en) 2003-10-09 2003-10-09 Circuit and method for controlling a clock synchronizing circuit for low power refresh operation
PCT/US2004/032037 WO2005038864A2 (en) 2003-10-09 2004-09-29 Circuit and method for controlling a clock synchronizing circuit for low power refresh operation

Publications (1)

Publication Number Publication Date
ATE431612T1 true ATE431612T1 (de) 2009-05-15

Family

ID=34422918

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04789283T ATE431612T1 (de) 2003-10-09 2004-09-29 Schaltung und verfahren zur steuerung einer taktsynchronisationsschaltung für eine low-power- auffrischoperation

Country Status (8)

Country Link
US (5) US6975556B2 (de)
EP (1) EP1671357B1 (de)
JP (1) JP4956734B2 (de)
KR (1) KR100903012B1 (de)
CN (1) CN1902708A (de)
AT (1) ATE431612T1 (de)
DE (1) DE602004021124D1 (de)
WO (1) WO2005038864A2 (de)

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US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US6975556B2 (en) * 2003-10-09 2005-12-13 Micron Technology, Inc. Circuit and method for controlling a clock synchronizing circuit for low power refresh operation
US7345940B2 (en) * 2003-11-18 2008-03-18 Infineon Technologies Ag Method and circuit configuration for refreshing data in a semiconductor memory
US7233538B1 (en) * 2004-08-02 2007-06-19 Sun Microsystems, Inc. Variable memory refresh rate for DRAM
US7366862B2 (en) * 2004-11-12 2008-04-29 Lsi Logic Corporation Method and apparatus for self-adjusting input delay in DDR-based memory systems
JP4919333B2 (ja) * 2005-09-29 2012-04-18 株式会社ハイニックスセミコンダクター 半導体メモリ素子のデータ入力装置
JP4837357B2 (ja) * 2005-10-18 2011-12-14 エルピーダメモリ株式会社 半導体記憶装置
US7970086B2 (en) * 2007-08-15 2011-06-28 Infineon Technologies Ag System and method for clock drift compensation
CA2701180A1 (en) * 2007-12-21 2009-07-02 Mosaid Technologies Incorporated Non-volatile semiconductor memory device with power saving feature
JP2010176783A (ja) 2009-02-02 2010-08-12 Elpida Memory Inc 半導体装置とその制御方法と半導体装置とそれを制御するコントローラとを含む半導体システム
US7957218B2 (en) * 2009-06-11 2011-06-07 Freescale Semiconductor, Inc. Memory controller with skew control and method
US8300464B2 (en) 2010-04-13 2012-10-30 Freescale Semiconductor, Inc. Method and circuit for calibrating data capture in a memory controller
KR20120070436A (ko) * 2010-12-21 2012-06-29 에스케이하이닉스 주식회사 반도체 메모리 장치
WO2012115839A1 (en) 2011-02-23 2012-08-30 Rambus Inc. Protocol for memory power-mode control
US8933715B2 (en) 2012-04-08 2015-01-13 Elm Technology Corporation Configurable vertical integration
KR101980162B1 (ko) * 2012-06-28 2019-08-28 에스케이하이닉스 주식회사 메모리
US9153310B2 (en) 2013-01-16 2015-10-06 Maxlinear, Inc. Dynamic random access memory for communications systems
US10169262B2 (en) * 2015-07-14 2019-01-01 Qualcomm Incorporated Low-power clocking for a high-speed memory interface
KR20180047778A (ko) 2016-11-01 2018-05-10 삼성전자주식회사 단계별 저전력 상태들을 갖는 메모리 장치
KR20180114712A (ko) * 2017-04-11 2018-10-19 에스케이하이닉스 주식회사 리프레쉬 컨트롤러 및 그를 포함하는 반도체 메모리 장치
EP3641951B1 (de) 2017-06-22 2023-09-20 The Procter & Gamble Company Filme mit einer wasserlöslichen schicht und einer aufgedämpften organischen beschichtung
CN110719968A (zh) 2017-06-22 2020-01-21 宝洁公司 包括水溶性层和气相沉积无机涂层的膜
US10339998B1 (en) * 2018-03-27 2019-07-02 Micron Technology, Inc. Apparatuses and methods for providing clock signals in a semiconductor device
US11163487B2 (en) * 2018-06-04 2021-11-02 Micron Technology, Inc. Methods for generating notifications for updated information from mode registers of a memory device to a host and memory devices and systems employing the same
US10892764B1 (en) * 2020-08-14 2021-01-12 Winbond Electronics Corp. Delay locked loop device and update method thereof

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US5272676A (en) * 1990-11-20 1993-12-21 Hitachi, Ltd. Semiconductor integrated circuit device
US5311468A (en) * 1991-03-21 1994-05-10 Texas Instruments Incorporated Random access memory with a serial register arranged for quick access of a second bit from an arbitrary address
KR0171930B1 (ko) * 1993-12-15 1999-03-30 모리시다 요이치 반도체 메모리, 동화기억 메모리, 동화기억장치, 동화표시장치, 정지화기억 메모리 및 전자노트
JP3592386B2 (ja) * 1994-11-22 2004-11-24 株式会社ルネサステクノロジ 同期型半導体記憶装置
US5729720A (en) * 1994-12-22 1998-03-17 Texas Instruments Incorporated Power management masked clock circuitry, systems and methods
JP3893167B2 (ja) * 1996-04-26 2007-03-14 株式会社ルネサステクノロジ 同期型半導体記憶装置
JPH1196760A (ja) * 1997-09-24 1999-04-09 Fujitsu Ltd 半導体記憶装置
JP3490887B2 (ja) * 1998-03-05 2004-01-26 シャープ株式会社 同期型半導体記憶装置
JP2000030438A (ja) * 1998-07-10 2000-01-28 Mitsubishi Electric Corp 同期型半導体記憶装置
JP3279274B2 (ja) * 1998-12-28 2002-04-30 日本電気株式会社 半導体装置
US6828106B2 (en) * 1999-02-26 2004-12-07 Cyclacel Limited Methods and compositions using coiled binding partners
US6208577B1 (en) * 1999-04-16 2001-03-27 Micron Technology, Inc. Circuit and method for refreshing data stored in a memory cell
JP2001118383A (ja) * 1999-10-20 2001-04-27 Fujitsu Ltd リフレッシュを自動で行うダイナミックメモリ回路
KR100328556B1 (ko) * 1999-12-23 2002-03-15 박종섭 셀프 리프레쉬 제어장치
KR100374641B1 (ko) * 2000-11-24 2003-03-04 삼성전자주식회사 스탠바이 모드에서 지연동기 루프회로의 전력소모를감소시키기 위한 제어회로를 구비하는 반도체 메모리장치및 이의 파우워 다운 제어방법
US6646942B2 (en) * 2001-10-09 2003-11-11 Micron Technology, Inc. Method and circuit for adjusting a self-refresh rate to maintain dynamic data at low supply voltages
TW533413B (en) * 2001-10-11 2003-05-21 Cascade Semiconductor Corp Asynchronous hidden refresh of semiconductor memory
JP4041358B2 (ja) * 2002-07-04 2008-01-30 富士通株式会社 半導体メモリ
US6975556B2 (en) * 2003-10-09 2005-12-13 Micron Technology, Inc. Circuit and method for controlling a clock synchronizing circuit for low power refresh operation

Also Published As

Publication number Publication date
KR100903012B1 (ko) 2009-06-17
WO2005038864A2 (en) 2005-04-28
CN1902708A (zh) 2007-01-24
US20050078539A1 (en) 2005-04-14
US7106646B2 (en) 2006-09-12
US8400868B2 (en) 2013-03-19
US7606101B2 (en) 2009-10-20
US20060274592A1 (en) 2006-12-07
US7983110B2 (en) 2011-07-19
DE602004021124D1 (de) 2009-06-25
US6975556B2 (en) 2005-12-13
JP2007508649A (ja) 2007-04-05
US20110273938A1 (en) 2011-11-10
KR20060118468A (ko) 2006-11-23
WO2005038864A3 (en) 2006-08-03
EP1671357B1 (de) 2009-05-13
EP1671357A4 (de) 2007-03-14
US20100014371A1 (en) 2010-01-21
JP4956734B2 (ja) 2012-06-20
US20050254327A1 (en) 2005-11-17
EP1671357A2 (de) 2006-06-21

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