ATE413687T1 - Verfahren zur geräteanpassung und fehlerbeseitigung in einem plasmabearbeitungssystem - Google Patents
Verfahren zur geräteanpassung und fehlerbeseitigung in einem plasmabearbeitungssystemInfo
- Publication number
- ATE413687T1 ATE413687T1 AT03770493T AT03770493T ATE413687T1 AT E413687 T1 ATE413687 T1 AT E413687T1 AT 03770493 T AT03770493 T AT 03770493T AT 03770493 T AT03770493 T AT 03770493T AT E413687 T1 ATE413687 T1 AT E413687T1
- Authority
- AT
- Austria
- Prior art keywords
- chamber
- processing system
- plasma processing
- power signal
- troubleshooting
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000013024 troubleshooting Methods 0.000 title 1
- 230000007547 defect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41410802P | 2002-09-26 | 2002-09-26 | |
US10/341,913 US6873114B2 (en) | 2002-09-26 | 2003-01-13 | Method for toolmatching and troubleshooting a plasma processing system |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE413687T1 true ATE413687T1 (de) | 2008-11-15 |
Family
ID=32033331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03770493T ATE413687T1 (de) | 2002-09-26 | 2003-09-26 | Verfahren zur geräteanpassung und fehlerbeseitigung in einem plasmabearbeitungssystem |
Country Status (11)
Country | Link |
---|---|
US (2) | US6873114B2 (de) |
EP (1) | EP1552543B1 (de) |
JP (2) | JP4932156B2 (de) |
KR (1) | KR101022993B1 (de) |
CN (1) | CN1698177B (de) |
AT (1) | ATE413687T1 (de) |
AU (1) | AU2003278983A1 (de) |
DE (1) | DE60324575D1 (de) |
IL (1) | IL167674A (de) |
TW (1) | TWI322447B (de) |
WO (1) | WO2004030016A2 (de) |
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US6873114B2 (en) * | 2002-09-26 | 2005-03-29 | Lam Research Corporation | Method for toolmatching and troubleshooting a plasma processing system |
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US9842725B2 (en) | 2013-01-31 | 2017-12-12 | Lam Research Corporation | Using modeling to determine ion energy associated with a plasma system |
US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
US9390893B2 (en) | 2012-02-22 | 2016-07-12 | Lam Research Corporation | Sub-pulsing during a state |
US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
US10128090B2 (en) * | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
US9320126B2 (en) | 2012-12-17 | 2016-04-19 | Lam Research Corporation | Determining a value of a variable on an RF transmission model |
US9295148B2 (en) | 2012-12-14 | 2016-03-22 | Lam Research Corporation | Computation of statistics for statistical data decimation |
US9462672B2 (en) | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
US10325759B2 (en) | 2012-02-22 | 2019-06-18 | Lam Research Corporation | Multiple control modes |
US9197196B2 (en) | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
US9368329B2 (en) | 2012-02-22 | 2016-06-14 | Lam Research Corporation | Methods and apparatus for synchronizing RF pulses in a plasma processing system |
US9408288B2 (en) | 2012-09-14 | 2016-08-02 | Lam Research Corporation | Edge ramping |
US9043525B2 (en) | 2012-12-14 | 2015-05-26 | Lam Research Corporation | Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool |
US9155182B2 (en) | 2013-01-11 | 2015-10-06 | Lam Research Corporation | Tuning a parameter associated with plasma impedance |
US9620337B2 (en) | 2013-01-31 | 2017-04-11 | Lam Research Corporation | Determining a malfunctioning device in a plasma system |
US9779196B2 (en) | 2013-01-31 | 2017-10-03 | Lam Research Corporation | Segmenting a model within a plasma system |
US9107284B2 (en) | 2013-03-13 | 2015-08-11 | Lam Research Corporation | Chamber matching using voltage control mode |
US9119283B2 (en) | 2013-03-14 | 2015-08-25 | Lam Research Corporation | Chamber matching for power control mode |
TWI647735B (zh) * | 2013-03-15 | 2019-01-11 | 美商蘭姆研究公司 | 使用模型化以建立與電漿系統相關的離子能量 |
US9837252B2 (en) * | 2013-05-09 | 2017-12-05 | Lam Research Corporation | Systems and methods for using one or more fixtures and efficiency to determine parameters of a match network model |
US9412670B2 (en) * | 2013-05-23 | 2016-08-09 | Lam Research Corporation | System, method and apparatus for RF power compensation in plasma etch chamber |
US9502221B2 (en) | 2013-07-26 | 2016-11-22 | Lam Research Corporation | Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching |
TWI677264B (zh) * | 2013-12-13 | 2019-11-11 | 美商蘭姆研究公司 | 基於射頻阻抗模型之故障檢測 |
US10431428B2 (en) | 2014-01-10 | 2019-10-01 | Reno Technologies, Inc. | System for providing variable capacitance |
US9745660B2 (en) | 2014-05-02 | 2017-08-29 | Reno Technologies, Inc. | Method for controlling a plasma chamber |
US9594105B2 (en) | 2014-01-10 | 2017-03-14 | Lam Research Corporation | Cable power loss determination for virtual metrology |
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US9846130B2 (en) | 2014-02-24 | 2017-12-19 | Applied Materials, Inc. | Ceramic ring test device |
US10950421B2 (en) | 2014-04-21 | 2021-03-16 | Lam Research Corporation | Using modeling for identifying a location of a fault in an RF transmission system for a plasma system |
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US9851389B2 (en) | 2014-10-21 | 2017-12-26 | Lam Research Corporation | Identifying components associated with a fault in a plasma system |
US9536749B2 (en) | 2014-12-15 | 2017-01-03 | Lam Research Corporation | Ion energy control by RF pulse shape |
KR102344524B1 (ko) * | 2015-08-28 | 2021-12-29 | 세메스 주식회사 | 플라즈마 발생 장치, 그를 포함하는 기판 처리 장치, 및 그 제어 방법 |
KR101736847B1 (ko) * | 2015-11-03 | 2017-05-17 | 세메스 주식회사 | 플라즈마 발생 장치, 위상 차 조절 방법, 및 그를 이용한 기판 처리 장치 |
CN106645954B (zh) * | 2015-11-03 | 2019-02-01 | 沈阳拓荆科技有限公司 | 加热盘阻抗测量工装及测量方法 |
KR20170103657A (ko) * | 2016-03-03 | 2017-09-13 | 램 리써치 코포레이션 | 매칭 네트워크 모델의 파라미터들을 결정하도록 하나 이상의 픽스처들 및 효율을 사용하기 위한 시스템들 및 방법들 |
US10283320B2 (en) * | 2016-11-11 | 2019-05-07 | Applied Materials, Inc. | Processing chamber hardware fault detection using spectral radio frequency analysis |
US20190108976A1 (en) * | 2017-10-11 | 2019-04-11 | Advanced Energy Industries, Inc. | Matched source impedance driving system and method of operating the same |
JP7096079B2 (ja) * | 2018-06-15 | 2022-07-05 | キオクシア株式会社 | プラズマ処理装置の再生装置 |
US11570879B2 (en) | 2019-08-19 | 2023-01-31 | Applied Materials, Inc. | Methods and apparatus for controlling RF parameters at multiple frequencies |
US11486927B2 (en) * | 2020-04-02 | 2022-11-01 | Applied Materials, Inc. | Bode fingerprinting for characterizations and failure detections in processing chamber |
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US5467013A (en) * | 1993-12-07 | 1995-11-14 | Sematech, Inc. | Radio frequency monitor for semiconductor process control |
US5576629A (en) * | 1994-10-24 | 1996-11-19 | Fourth State Technology, Inc. | Plasma monitoring and control method and system |
US5565737A (en) * | 1995-06-07 | 1996-10-15 | Eni - A Division Of Astec America, Inc. | Aliasing sampler for plasma probe detection |
JP2884056B2 (ja) * | 1995-12-07 | 1999-04-19 | パール工業株式会社 | 放電プラズマ発生用高周波電源装置及び半導体製造装置 |
US5889252A (en) * | 1996-12-19 | 1999-03-30 | Lam Research Corporation | Method of and apparatus for independently controlling electric parameters of an impedance matching network |
JP4041223B2 (ja) * | 1997-09-30 | 2008-01-30 | 株式会社ダイヘン | プラズマ監視装置 |
JPH11121440A (ja) * | 1997-10-20 | 1999-04-30 | Toshiba Corp | プラズマ評価方法及びその装置 |
US6449568B1 (en) * | 1998-02-27 | 2002-09-10 | Eni Technology, Inc. | Voltage-current sensor with high matching directivity |
JP3959200B2 (ja) * | 1999-03-19 | 2007-08-15 | 株式会社東芝 | 半導体装置の製造装置 |
US20050061445A1 (en) * | 1999-05-06 | 2005-03-24 | Tokyo Electron Limited | Plasma processing apparatus |
JP3846116B2 (ja) * | 1999-07-27 | 2006-11-15 | 松下電器産業株式会社 | プラズマ特性測定装置及びプラズマ処理検査方法 |
JP2001257245A (ja) * | 2000-03-10 | 2001-09-21 | Hamamatsu Photonics Kk | 製造システム |
TW529085B (en) * | 2000-09-22 | 2003-04-21 | Alps Electric Co Ltd | Method for evaluating performance of plasma treatment apparatus or performance confirming system of plasma treatment system |
JP3600144B2 (ja) * | 2000-09-22 | 2004-12-08 | アルプス電気株式会社 | プラズマ処理装置の性能評価方法、保守方法、及び性能管理システム、並びにプラズマ処理装置及びプラズマ処理装置の性能確認システム |
JP3670206B2 (ja) * | 2000-11-06 | 2005-07-13 | アルプス電気株式会社 | プラズマ処理装置又はプラズマ処理システムの性能評価方法、保守方法、性能管理システム、及び性能確認システム、並びにプラズマ処理装置 |
JP3670209B2 (ja) * | 2000-11-14 | 2005-07-13 | アルプス電気株式会社 | プラズマ処理装置の性能評価方法、保守方法、性能管理システム、及び性能確認システム、並びにプラズマ処理装置 |
JP3665265B2 (ja) * | 2000-12-28 | 2005-06-29 | 株式会社日立製作所 | プラズマ処理装置 |
JP2002270578A (ja) * | 2001-03-07 | 2002-09-20 | Hitachi Ltd | 半導体製造装置 |
JP4270872B2 (ja) * | 2001-03-16 | 2009-06-03 | 東京エレクトロン株式会社 | インピーダンスをモニターするシステム並びに方法 |
JP2002313729A (ja) * | 2001-04-10 | 2002-10-25 | Matsushita Electric Ind Co Ltd | プラズマ処理装置の監視方法、プラズマ処理方法及び装置 |
JP2002353201A (ja) * | 2001-05-28 | 2002-12-06 | Matsushita Electric Ind Co Ltd | プラズマモニタリング装置およびプラズマモニタリング方法 |
JP3785996B2 (ja) * | 2001-12-07 | 2006-06-14 | 松下電器産業株式会社 | プラズマエッチング装置および半導体装置の製造方法 |
JP3977114B2 (ja) * | 2002-03-25 | 2007-09-19 | 株式会社ルネサステクノロジ | プラズマ処理装置 |
US6873114B2 (en) * | 2002-09-26 | 2005-03-29 | Lam Research Corporation | Method for toolmatching and troubleshooting a plasma processing system |
-
2003
- 2003-01-13 US US10/341,913 patent/US6873114B2/en not_active Expired - Lifetime
- 2003-09-26 EP EP03770493A patent/EP1552543B1/de not_active Expired - Lifetime
- 2003-09-26 KR KR1020057005254A patent/KR101022993B1/ko not_active IP Right Cessation
- 2003-09-26 AT AT03770493T patent/ATE413687T1/de not_active IP Right Cessation
- 2003-09-26 CN CN038246813A patent/CN1698177B/zh not_active Expired - Fee Related
- 2003-09-26 DE DE60324575T patent/DE60324575D1/de not_active Expired - Lifetime
- 2003-09-26 TW TW092126671A patent/TWI322447B/zh not_active IP Right Cessation
- 2003-09-26 AU AU2003278983A patent/AU2003278983A1/en not_active Abandoned
- 2003-09-26 WO PCT/US2003/030426 patent/WO2004030016A2/en active Application Filing
- 2003-09-26 JP JP2004539982A patent/JP4932156B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-09 US US11/055,165 patent/US20050151479A1/en not_active Abandoned
- 2005-03-24 IL IL167674A patent/IL167674A/en not_active IP Right Cessation
-
2009
- 2009-11-05 JP JP2009253964A patent/JP5128571B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20040061448A1 (en) | 2004-04-01 |
DE60324575D1 (de) | 2008-12-18 |
JP4932156B2 (ja) | 2012-05-16 |
US6873114B2 (en) | 2005-03-29 |
CN1698177B (zh) | 2010-04-14 |
WO2004030016A3 (en) | 2004-07-29 |
TWI322447B (en) | 2010-03-21 |
KR20050053698A (ko) | 2005-06-08 |
EP1552543B1 (de) | 2008-11-05 |
TW200416784A (en) | 2004-09-01 |
AU2003278983A1 (en) | 2004-04-19 |
JP5128571B2 (ja) | 2013-01-23 |
JP2006501611A (ja) | 2006-01-12 |
CN1698177A (zh) | 2005-11-16 |
AU2003278983A8 (en) | 2004-04-19 |
US20050151479A1 (en) | 2005-07-14 |
WO2004030016A2 (en) | 2004-04-08 |
KR101022993B1 (ko) | 2011-03-22 |
IL167674A (en) | 2009-06-15 |
JP2010062579A (ja) | 2010-03-18 |
EP1552543A2 (de) | 2005-07-13 |
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Legal Events
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RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |