ATE413687T1 - Verfahren zur geräteanpassung und fehlerbeseitigung in einem plasmabearbeitungssystem - Google Patents

Verfahren zur geräteanpassung und fehlerbeseitigung in einem plasmabearbeitungssystem

Info

Publication number
ATE413687T1
ATE413687T1 AT03770493T AT03770493T ATE413687T1 AT E413687 T1 ATE413687 T1 AT E413687T1 AT 03770493 T AT03770493 T AT 03770493T AT 03770493 T AT03770493 T AT 03770493T AT E413687 T1 ATE413687 T1 AT E413687T1
Authority
AT
Austria
Prior art keywords
chamber
processing system
plasma processing
power signal
troubleshooting
Prior art date
Application number
AT03770493T
Other languages
English (en)
Inventor
Armen Avoyan
Seyed Jafarian-Tehrani
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE413687T1 publication Critical patent/ATE413687T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302Controlling tubes by external information, e.g. programme control
    • H01J37/3023Programme control
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
AT03770493T 2002-09-26 2003-09-26 Verfahren zur geräteanpassung und fehlerbeseitigung in einem plasmabearbeitungssystem ATE413687T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41410802P 2002-09-26 2002-09-26
US10/341,913 US6873114B2 (en) 2002-09-26 2003-01-13 Method for toolmatching and troubleshooting a plasma processing system

Publications (1)

Publication Number Publication Date
ATE413687T1 true ATE413687T1 (de) 2008-11-15

Family

ID=32033331

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03770493T ATE413687T1 (de) 2002-09-26 2003-09-26 Verfahren zur geräteanpassung und fehlerbeseitigung in einem plasmabearbeitungssystem

Country Status (11)

Country Link
US (2) US6873114B2 (de)
EP (1) EP1552543B1 (de)
JP (2) JP4932156B2 (de)
KR (1) KR101022993B1 (de)
CN (1) CN1698177B (de)
AT (1) ATE413687T1 (de)
AU (1) AU2003278983A1 (de)
DE (1) DE60324575D1 (de)
IL (1) IL167674A (de)
TW (1) TWI322447B (de)
WO (1) WO2004030016A2 (de)

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US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
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US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
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US9043525B2 (en) 2012-12-14 2015-05-26 Lam Research Corporation Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool
US9155182B2 (en) 2013-01-11 2015-10-06 Lam Research Corporation Tuning a parameter associated with plasma impedance
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US9107284B2 (en) 2013-03-13 2015-08-11 Lam Research Corporation Chamber matching using voltage control mode
US9119283B2 (en) 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
TWI647735B (zh) * 2013-03-15 2019-01-11 美商蘭姆研究公司 使用模型化以建立與電漿系統相關的離子能量
US9837252B2 (en) * 2013-05-09 2017-12-05 Lam Research Corporation Systems and methods for using one or more fixtures and efficiency to determine parameters of a match network model
US9412670B2 (en) * 2013-05-23 2016-08-09 Lam Research Corporation System, method and apparatus for RF power compensation in plasma etch chamber
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
TWI677264B (zh) * 2013-12-13 2019-11-11 美商蘭姆研究公司 基於射頻阻抗模型之故障檢測
US10431428B2 (en) 2014-01-10 2019-10-01 Reno Technologies, Inc. System for providing variable capacitance
US9745660B2 (en) 2014-05-02 2017-08-29 Reno Technologies, Inc. Method for controlling a plasma chamber
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
KR102021961B1 (ko) 2014-01-13 2019-11-04 삼성전자주식회사 반도체 제조설비의 관리방법
US9846130B2 (en) 2014-02-24 2017-12-19 Applied Materials, Inc. Ceramic ring test device
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
KR102223623B1 (ko) 2014-07-30 2021-03-08 삼성전자주식회사 반도체 제조설비의 관리방법 및 그의 관리시스템
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US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
KR102344524B1 (ko) * 2015-08-28 2021-12-29 세메스 주식회사 플라즈마 발생 장치, 그를 포함하는 기판 처리 장치, 및 그 제어 방법
KR101736847B1 (ko) * 2015-11-03 2017-05-17 세메스 주식회사 플라즈마 발생 장치, 위상 차 조절 방법, 및 그를 이용한 기판 처리 장치
CN106645954B (zh) * 2015-11-03 2019-02-01 沈阳拓荆科技有限公司 加热盘阻抗测量工装及测量方法
KR20170103657A (ko) * 2016-03-03 2017-09-13 램 리써치 코포레이션 매칭 네트워크 모델의 파라미터들을 결정하도록 하나 이상의 픽스처들 및 효율을 사용하기 위한 시스템들 및 방법들
US10283320B2 (en) * 2016-11-11 2019-05-07 Applied Materials, Inc. Processing chamber hardware fault detection using spectral radio frequency analysis
US20190108976A1 (en) * 2017-10-11 2019-04-11 Advanced Energy Industries, Inc. Matched source impedance driving system and method of operating the same
JP7096079B2 (ja) * 2018-06-15 2022-07-05 キオクシア株式会社 プラズマ処理装置の再生装置
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US11486927B2 (en) * 2020-04-02 2022-11-01 Applied Materials, Inc. Bode fingerprinting for characterizations and failure detections in processing chamber

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Also Published As

Publication number Publication date
US20040061448A1 (en) 2004-04-01
DE60324575D1 (de) 2008-12-18
JP4932156B2 (ja) 2012-05-16
US6873114B2 (en) 2005-03-29
CN1698177B (zh) 2010-04-14
WO2004030016A3 (en) 2004-07-29
TWI322447B (en) 2010-03-21
KR20050053698A (ko) 2005-06-08
EP1552543B1 (de) 2008-11-05
TW200416784A (en) 2004-09-01
AU2003278983A1 (en) 2004-04-19
JP5128571B2 (ja) 2013-01-23
JP2006501611A (ja) 2006-01-12
CN1698177A (zh) 2005-11-16
AU2003278983A8 (en) 2004-04-19
US20050151479A1 (en) 2005-07-14
WO2004030016A2 (en) 2004-04-08
KR101022993B1 (ko) 2011-03-22
IL167674A (en) 2009-06-15
JP2010062579A (ja) 2010-03-18
EP1552543A2 (de) 2005-07-13

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