DE60035513D1 - System zur messung der elektronendichte und plasma-prozesssteuerung, das änderungen in der resonanzfrequenz eines plasma enthaltenden offen resonators verwendet - Google Patents

System zur messung der elektronendichte und plasma-prozesssteuerung, das änderungen in der resonanzfrequenz eines plasma enthaltenden offen resonators verwendet

Info

Publication number
DE60035513D1
DE60035513D1 DE60035513T DE60035513T DE60035513D1 DE 60035513 D1 DE60035513 D1 DE 60035513D1 DE 60035513 T DE60035513 T DE 60035513T DE 60035513 T DE60035513 T DE 60035513T DE 60035513 D1 DE60035513 D1 DE 60035513D1
Authority
DE
Germany
Prior art keywords
plasma
electron density
open resonator
resonant
changes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60035513T
Other languages
English (en)
Other versions
DE60035513T2 (de
Inventor
Joseph T Verdeyen
Wayne L Johnson
Murray D Sirkis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of DE60035513D1 publication Critical patent/DE60035513D1/de
Application granted granted Critical
Publication of DE60035513T2 publication Critical patent/DE60035513T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32954Electron temperature measurement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/3299Feedback systems
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/0006Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
DE60035513T 1999-07-21 2000-07-20 System zur messung der elektronendichte und plasmaprozesssteuerung, das änderungen in der resonanzfrequenz eines plasma enthaltenden offenen resonators verwendet Expired - Lifetime DE60035513T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14483399P 1999-07-21 1999-07-21
US144833P 1999-07-21
PCT/US2000/019536 WO2001006544A2 (en) 1999-07-21 2000-07-20 Electron density measurement and plasma process control system using changes in the resonant frequency of an open resonator containing the plasma

Publications (2)

Publication Number Publication Date
DE60035513D1 true DE60035513D1 (de) 2007-08-23
DE60035513T2 DE60035513T2 (de) 2008-03-20

Family

ID=22510356

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60035513T Expired - Lifetime DE60035513T2 (de) 1999-07-21 2000-07-20 System zur messung der elektronendichte und plasmaprozesssteuerung, das änderungen in der resonanzfrequenz eines plasma enthaltenden offenen resonators verwendet

Country Status (8)

Country Link
EP (1) EP1212611B1 (de)
JP (1) JP4422375B2 (de)
KR (1) KR100792302B1 (de)
CN (1) CN1204399C (de)
AT (1) ATE366927T1 (de)
DE (1) DE60035513T2 (de)
TW (1) TW484015B (de)
WO (1) WO2001006544A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4455794B2 (ja) * 1999-07-20 2010-04-21 東京エレクトロン株式会社 プラズマ発生器を制御するためのシステム
US6741944B1 (en) 1999-07-20 2004-05-25 Tokyo Electron Limited Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasma
US6646386B1 (en) 1999-07-20 2003-11-11 Tokyo Electron Limited Stabilized oscillator circuit for plasma density measurement
US6861844B1 (en) 1999-07-21 2005-03-01 Tokyo Electron Limited Electron density measurement and plasma process control system using changes in the resonant frequency of an open resonator containing the plasma
US7214289B2 (en) 2001-10-24 2007-05-08 Tokyo Electron Limited Method and apparatus for wall film monitoring
KR100751610B1 (ko) * 2001-10-24 2007-08-22 동경 엘렉트론 주식회사 벽막(壁膜)감시용 방법 및 장치
JP4777647B2 (ja) * 2002-07-23 2011-09-21 東京エレクトロン株式会社 プラズマ診断システムおよびその制御方法
CN104244554A (zh) * 2013-06-21 2014-12-24 电子科技大学 一种利用准光学谐振腔快速实时诊断等离子体的新方法
CN104615580B (zh) * 2015-01-23 2017-06-27 中国航天空气动力技术研究院 一种返回器流场峰值电子密度快速预测方法
JP6899693B2 (ja) * 2017-04-14 2021-07-07 東京エレクトロン株式会社 プラズマ処理装置及び制御方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3952246A (en) * 1975-05-29 1976-04-20 The United States Of America As Represented By The United States Energy Research And Development Administration Plasma digital density determining device
US5576629A (en) * 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system
JPH08255696A (ja) * 1995-03-17 1996-10-01 Mitsubishi Heavy Ind Ltd プラズマ診断装置
FR2738984B1 (fr) * 1995-09-19 1997-11-21 Centre Nat Rech Scient Procede et dispositif de mesure d'un flux d'ions dans un plasma
US6252354B1 (en) * 1996-11-04 2001-06-26 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control

Also Published As

Publication number Publication date
JP4422375B2 (ja) 2010-02-24
ATE366927T1 (de) 2007-08-15
EP1212611B1 (de) 2007-07-11
KR100792302B1 (ko) 2008-01-07
CN1204399C (zh) 2005-06-01
EP1212611A2 (de) 2002-06-12
WO2001006544A3 (en) 2001-07-05
CN1361863A (zh) 2002-07-31
KR20020036836A (ko) 2002-05-16
DE60035513T2 (de) 2008-03-20
JP2003523045A (ja) 2003-07-29
WO2001006544A2 (en) 2001-01-25
EP1212611A4 (de) 2006-03-22
TW484015B (en) 2002-04-21

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