ATE366927T1 - System zur messung der elektronendichte und plasma-prozesssteuerung, das änderungen in der resonanzfrequenz eines plasma enthaltenden offen resonators verwendet - Google Patents

System zur messung der elektronendichte und plasma-prozesssteuerung, das änderungen in der resonanzfrequenz eines plasma enthaltenden offen resonators verwendet

Info

Publication number
ATE366927T1
ATE366927T1 AT00975171T AT00975171T ATE366927T1 AT E366927 T1 ATE366927 T1 AT E366927T1 AT 00975171 T AT00975171 T AT 00975171T AT 00975171 T AT00975171 T AT 00975171T AT E366927 T1 ATE366927 T1 AT E366927T1
Authority
AT
Austria
Prior art keywords
plasma
electron density
open resonator
resonant
changes
Prior art date
Application number
AT00975171T
Other languages
English (en)
Inventor
Joseph Verdeyen
Wayne Johnson
Murray Sirkis
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of ATE366927T1 publication Critical patent/ATE366927T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32954Electron temperature measurement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/3299Feedback systems
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/0006Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
AT00975171T 1999-07-21 2000-07-20 System zur messung der elektronendichte und plasma-prozesssteuerung, das änderungen in der resonanzfrequenz eines plasma enthaltenden offen resonators verwendet ATE366927T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14483399P 1999-07-21 1999-07-21

Publications (1)

Publication Number Publication Date
ATE366927T1 true ATE366927T1 (de) 2007-08-15

Family

ID=22510356

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00975171T ATE366927T1 (de) 1999-07-21 2000-07-20 System zur messung der elektronendichte und plasma-prozesssteuerung, das änderungen in der resonanzfrequenz eines plasma enthaltenden offen resonators verwendet

Country Status (8)

Country Link
EP (1) EP1212611B1 (de)
JP (1) JP4422375B2 (de)
KR (1) KR100792302B1 (de)
CN (1) CN1204399C (de)
AT (1) ATE366927T1 (de)
DE (1) DE60035513T2 (de)
TW (1) TW484015B (de)
WO (1) WO2001006544A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646386B1 (en) 1999-07-20 2003-11-11 Tokyo Electron Limited Stabilized oscillator circuit for plasma density measurement
KR100792303B1 (ko) * 1999-07-20 2008-01-07 동경 엘렉트론 주식회사 플라즈마를 수용하는 개방형 공진기에 고정된 마이크로파발진기를 사용하는 전자밀도측정과 플라즈마 공정제어시스템
US6741944B1 (en) 1999-07-20 2004-05-25 Tokyo Electron Limited Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasma
US6861844B1 (en) 1999-07-21 2005-03-01 Tokyo Electron Limited Electron density measurement and plasma process control system using changes in the resonant frequency of an open resonator containing the plasma
CN1249401C (zh) * 2001-10-24 2006-04-05 东京电子株式会社 用于壁膜监测的方法与设备
US7214289B2 (en) 2001-10-24 2007-05-08 Tokyo Electron Limited Method and apparatus for wall film monitoring
JP4777647B2 (ja) * 2002-07-23 2011-09-21 東京エレクトロン株式会社 プラズマ診断システムおよびその制御方法
CN104244554A (zh) * 2013-06-21 2014-12-24 电子科技大学 一种利用准光学谐振腔快速实时诊断等离子体的新方法
CN104615580B (zh) * 2015-01-23 2017-06-27 中国航天空气动力技术研究院 一种返回器流场峰值电子密度快速预测方法
JP6899693B2 (ja) * 2017-04-14 2021-07-07 東京エレクトロン株式会社 プラズマ処理装置及び制御方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3952246A (en) * 1975-05-29 1976-04-20 The United States Of America As Represented By The United States Energy Research And Development Administration Plasma digital density determining device
US5576629A (en) * 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system
JPH08255696A (ja) * 1995-03-17 1996-10-01 Mitsubishi Heavy Ind Ltd プラズマ診断装置
FR2738984B1 (fr) * 1995-09-19 1997-11-21 Centre Nat Rech Scient Procede et dispositif de mesure d'un flux d'ions dans un plasma
US6252354B1 (en) * 1996-11-04 2001-06-26 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control

Also Published As

Publication number Publication date
EP1212611B1 (de) 2007-07-11
EP1212611A4 (de) 2006-03-22
EP1212611A2 (de) 2002-06-12
CN1361863A (zh) 2002-07-31
JP2003523045A (ja) 2003-07-29
JP4422375B2 (ja) 2010-02-24
WO2001006544A2 (en) 2001-01-25
DE60035513D1 (de) 2007-08-23
KR20020036836A (ko) 2002-05-16
KR100792302B1 (ko) 2008-01-07
DE60035513T2 (de) 2008-03-20
WO2001006544A3 (en) 2001-07-05
TW484015B (en) 2002-04-21
CN1204399C (zh) 2005-06-01

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