ATE399367T1 - Verfahren zur herstellung eines silizium- germanium basis eines heteroübergang- bipolartransistors - Google Patents
Verfahren zur herstellung eines silizium- germanium basis eines heteroübergang- bipolartransistorsInfo
- Publication number
- ATE399367T1 ATE399367T1 AT01300208T AT01300208T ATE399367T1 AT E399367 T1 ATE399367 T1 AT E399367T1 AT 01300208 T AT01300208 T AT 01300208T AT 01300208 T AT01300208 T AT 01300208T AT E399367 T1 ATE399367 T1 AT E399367T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon
- mesa
- bipolar transistor
- germanium
- germanium base
- Prior art date
Links
- 229910000577 Silicon-germanium Inorganic materials 0.000 title abstract 7
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/480,033 US6251738B1 (en) | 2000-01-10 | 2000-01-10 | Process for forming a silicon-germanium base of heterojunction bipolar transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE399367T1 true ATE399367T1 (de) | 2008-07-15 |
Family
ID=23906406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01300208T ATE399367T1 (de) | 2000-01-10 | 2001-01-10 | Verfahren zur herstellung eines silizium- germanium basis eines heteroübergang- bipolartransistors |
Country Status (9)
Country | Link |
---|---|
US (2) | US6251738B1 (de) |
EP (1) | EP1132954B1 (de) |
JP (1) | JP3701873B2 (de) |
KR (1) | KR100354118B1 (de) |
CN (1) | CN1156899C (de) |
AT (1) | ATE399367T1 (de) |
DE (1) | DE60134511D1 (de) |
SG (1) | SG89368A1 (de) |
TW (1) | TW475225B (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6251738B1 (en) * | 2000-01-10 | 2001-06-26 | International Business Machines Corporation | Process for forming a silicon-germanium base of heterojunction bipolar transistor |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
US6506657B1 (en) | 2000-04-19 | 2003-01-14 | National Semiconductor Corporation | Process for forming damascene-type isolation structure for BJT device formed in trench |
US6514886B1 (en) * | 2000-09-22 | 2003-02-04 | Newport Fab, Llc | Method for elimination of contaminants prior to epitaxy |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US6620732B1 (en) * | 2000-11-17 | 2003-09-16 | Newport Fab, Llc | Method for controlling critical dimension in a polycrystalline silicon emitter and related structure |
US20020096683A1 (en) * | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
US6762480B2 (en) * | 2001-02-27 | 2004-07-13 | Agilent Technologies, Inc. | Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improved gain |
US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
FR2822292B1 (fr) * | 2001-03-14 | 2003-07-18 | St Microelectronics Sa | Procede de fabrication d'un transistor bipolaire de type double polysilicium a base a heterojonction et transistor correspondant |
US6603156B2 (en) * | 2001-03-31 | 2003-08-05 | International Business Machines Corporation | Strained silicon on insulator structures |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
SE522891C2 (sv) * | 2001-11-09 | 2004-03-16 | Ericsson Telefon Ab L M | En kisel-germanium mesa transistor, en metod för dess framställning och en integrerad krets innefattande en sådan transistor |
KR100455829B1 (ko) * | 2001-12-10 | 2004-11-06 | 주식회사 타키오닉스 | 초자기정렬 이종접합 바이폴라 소자 및 그 제조방법 |
US6617619B1 (en) * | 2002-02-04 | 2003-09-09 | Newport Fab, Llc | Structure for a selective epitaxial HBT emitter |
US6597022B1 (en) * | 2002-02-04 | 2003-07-22 | Newport Fab, Llc | Method for controlling critical dimension in an HBT emitter and related structure |
US6878976B2 (en) | 2002-03-13 | 2005-04-12 | International Business Machines Corporation | Carbon-modulated breakdown voltage SiGe transistor for low voltage trigger ESD applications |
US6699765B1 (en) | 2002-08-29 | 2004-03-02 | Micrel, Inc. | Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer |
EP1418615A1 (de) * | 2002-11-05 | 2004-05-12 | United Microelectronics Corporation | Herstellung eines selbstjustierten Bipolartransistors |
US20040115878A1 (en) * | 2002-12-13 | 2004-06-17 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for manufacturing a silicon germanium based device with crystal defect prevention |
US7453129B2 (en) | 2002-12-18 | 2008-11-18 | Noble Peak Vision Corp. | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry |
US7589380B2 (en) | 2002-12-18 | 2009-09-15 | Noble Peak Vision Corp. | Method for forming integrated circuit utilizing dual semiconductors |
US6777302B1 (en) | 2003-06-04 | 2004-08-17 | International Business Machines Corporation | Nitride pedestal for raised extrinsic base HBT process |
US7012009B2 (en) * | 2004-02-24 | 2006-03-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for improving the electrical continuity for a silicon-germanium film across a silicon/oxide/polysilicon surface using a novel two-temperature process |
US7002190B1 (en) * | 2004-09-21 | 2006-02-21 | International Business Machines Corporation | Method of collector formation in BiCMOS technology |
KR101118649B1 (ko) * | 2005-01-24 | 2012-03-06 | 삼성전자주식회사 | 바이폴라 트랜지스터 및 그 형성 방법 |
US7544577B2 (en) * | 2005-08-26 | 2009-06-09 | International Business Machines Corporation | Mobility enhancement in SiGe heterojunction bipolar transistors |
US7651919B2 (en) * | 2005-11-04 | 2010-01-26 | Atmel Corporation | Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization |
US7439558B2 (en) * | 2005-11-04 | 2008-10-21 | Atmel Corporation | Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement |
US20070102729A1 (en) * | 2005-11-04 | 2007-05-10 | Enicks Darwin G | Method and system for providing a heterojunction bipolar transistor having SiGe extensions |
TW200849556A (en) * | 2006-06-14 | 2008-12-16 | Nxp Bv | Semiconductor device and method of manufacturing such a device |
KR100817403B1 (ko) | 2006-11-20 | 2008-03-27 | 전북대학교산학협력단 | 반도체 소자 구조 및 그 제조 방법 |
US20080142836A1 (en) * | 2006-12-15 | 2008-06-19 | Darwin Gene Enicks | Method for growth of alloy layers with compositional curvature in a semiconductor device |
US7453107B1 (en) * | 2007-05-04 | 2008-11-18 | Dsm Solutions, Inc. | Method for applying a stress layer to a semiconductor device and device formed therefrom |
US7531854B2 (en) | 2007-05-04 | 2009-05-12 | Dsm Solutions, Inc. | Semiconductor device having strain-inducing substrate and fabrication methods thereof |
US8809908B2 (en) * | 2007-12-28 | 2014-08-19 | Sumitomo Chemical Company, Limited | Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device |
CN101834135A (zh) * | 2010-04-22 | 2010-09-15 | 上海宏力半导体制造有限公司 | 一种双极型晶体管及其制作方法 |
US10529836B1 (en) * | 2017-06-19 | 2020-01-07 | Newport Fab, Llc | SiGe heterojunction bipolar transistor with crystalline raised base on germanium etch stop layer |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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US5064772A (en) | 1988-08-31 | 1991-11-12 | International Business Machines Corporation | Bipolar transistor integrated circuit technology |
US5256550A (en) | 1988-11-29 | 1993-10-26 | Hewlett-Packard Company | Fabricating a semiconductor device with strained Si1-x Gex layer |
DE4102888A1 (de) * | 1990-01-31 | 1991-08-01 | Toshiba Kawasaki Kk | Verfahren zur herstellung eines miniaturisierten heterouebergang-bipolartransistors |
US5363793A (en) * | 1990-04-06 | 1994-11-15 | Canon Kabushiki Kaisha | Method for forming crystals |
JP3130545B2 (ja) * | 1991-03-06 | 2001-01-31 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
US5352912A (en) * | 1991-11-13 | 1994-10-04 | International Business Machines Corporation | Graded bandgap single-crystal emitter heterojunction bipolar transistor |
US5338942A (en) * | 1992-01-16 | 1994-08-16 | Hitachi, Ltd. | Semiconductor projections having layers with different lattice constants |
JP2971246B2 (ja) * | 1992-04-15 | 1999-11-02 | 株式会社東芝 | ヘテロバイポーラトランジスタの製造方法 |
US5523243A (en) | 1992-12-21 | 1996-06-04 | International Business Machines Corporation | Method of fabricating a triple heterojunction bipolar transistor |
JP3156436B2 (ja) | 1993-04-05 | 2001-04-16 | 日本電気株式会社 | ヘテロ接合バイポーラトランジスタ |
JP2970425B2 (ja) | 1994-09-26 | 1999-11-02 | 日本電気株式会社 | バイポーラトランジスタの製造方法 |
KR970054343A (ko) * | 1995-12-20 | 1997-07-31 | 이준 | 규소/규소게르마늄 쌍극자 트랜지스터 제조방법 |
US5672522A (en) | 1996-03-05 | 1997-09-30 | Trw Inc. | Method for making selective subcollector heterojunction bipolar transistors |
US5773350A (en) * | 1997-01-28 | 1998-06-30 | National Semiconductor Corporation | Method for forming a self-aligned bipolar junction transistor with silicide extrinsic base contacts and selective epitaxial grown intrinsic base |
US6040225A (en) * | 1997-08-29 | 2000-03-21 | The Whitaker Corporation | Method of fabricating polysilicon based resistors in Si-Ge heterojunction devices |
US6251738B1 (en) * | 2000-01-10 | 2001-06-26 | International Business Machines Corporation | Process for forming a silicon-germanium base of heterojunction bipolar transistor |
-
2000
- 2000-01-10 US US09/480,033 patent/US6251738B1/en not_active Expired - Lifetime
- 2000-11-10 TW TW089123908A patent/TW475225B/zh not_active IP Right Cessation
- 2000-12-22 KR KR1020000080061A patent/KR100354118B1/ko not_active IP Right Cessation
- 2000-12-29 CN CNB001294938A patent/CN1156899C/zh not_active Expired - Lifetime
-
2001
- 2001-01-02 SG SG200100017A patent/SG89368A1/en unknown
- 2001-01-04 JP JP2001000070A patent/JP3701873B2/ja not_active Expired - Fee Related
- 2001-01-10 AT AT01300208T patent/ATE399367T1/de not_active IP Right Cessation
- 2001-01-10 DE DE60134511T patent/DE60134511D1/de not_active Expired - Lifetime
- 2001-01-10 EP EP01300208A patent/EP1132954B1/de not_active Expired - Lifetime
- 2001-05-29 US US09/867,373 patent/US6417059B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW475225B (en) | 2002-02-01 |
US6251738B1 (en) | 2001-06-26 |
DE60134511D1 (de) | 2008-08-07 |
US6417059B2 (en) | 2002-07-09 |
SG89368A1 (en) | 2002-06-18 |
KR20010070331A (ko) | 2001-07-25 |
US20010026986A1 (en) | 2001-10-04 |
EP1132954A2 (de) | 2001-09-12 |
KR100354118B1 (ko) | 2002-09-28 |
CN1304169A (zh) | 2001-07-18 |
EP1132954A3 (de) | 2004-02-18 |
CN1156899C (zh) | 2004-07-07 |
JP2001223224A (ja) | 2001-08-17 |
EP1132954B1 (de) | 2008-06-25 |
JP3701873B2 (ja) | 2005-10-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |