ATE391997T1 - Ferromagnetischer raumtemperatur-halbleiter und plasma unterstützte molekularstrahlepitaxie wie verfahren zu seiner herstellung - Google Patents

Ferromagnetischer raumtemperatur-halbleiter und plasma unterstützte molekularstrahlepitaxie wie verfahren zu seiner herstellung

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Publication number
ATE391997T1
ATE391997T1 AT03250653T AT03250653T ATE391997T1 AT E391997 T1 ATE391997 T1 AT E391997T1 AT 03250653 T AT03250653 T AT 03250653T AT 03250653 T AT03250653 T AT 03250653T AT E391997 T1 ATE391997 T1 AT E391997T1
Authority
AT
Austria
Prior art keywords
ferromagnetic
room temperature
molecular beam
group
beam epitaxy
Prior art date
Application number
AT03250653T
Other languages
English (en)
Inventor
Woo Y Lee
Suk H Han
Joon Y Chang
Hi J Kim
Jung Mi Lee
Jae M Myoung
Original Assignee
Korea Inst Sci & Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Inst Sci & Tech filed Critical Korea Inst Sci & Tech
Application granted granted Critical
Publication of ATE391997T1 publication Critical patent/ATE391997T1/de

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/404—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of III-V type, e.g. In1-x Mnx As
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/193—Magnetic semiconductor compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/385—Devices using spin-polarised carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H10N52/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Hard Magnetic Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
AT03250653T 2002-09-04 2003-01-31 Ferromagnetischer raumtemperatur-halbleiter und plasma unterstützte molekularstrahlepitaxie wie verfahren zu seiner herstellung ATE391997T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2002-0053306A KR100492482B1 (ko) 2002-09-04 2002-09-04 Ｐｅｍｂｅ로 제조된 상온 자성반도체 및 그 소자

Publications (1)

Publication Number Publication Date
ATE391997T1 true ATE391997T1 (de) 2008-04-15

Family

ID=31713179

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03250653T ATE391997T1 (de) 2002-09-04 2003-01-31 Ferromagnetischer raumtemperatur-halbleiter und plasma unterstützte molekularstrahlepitaxie wie verfahren zu seiner herstellung

Country Status (6)

Country Link
US (2) US20040041217A1 (de)
EP (1) EP1396867B1 (de)
JP (1) JP2004104070A (de)
KR (1) KR100492482B1 (de)
AT (1) ATE391997T1 (de)
DE (1) DE60320191T2 (de)

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JP4477305B2 (ja) * 2002-07-25 2010-06-09 独立行政法人科学技術振興機構 スピントランジスタ及びそれを用いた不揮発性メモリ
KR100681379B1 (ko) * 2003-03-07 2007-02-12 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 스핀 의존 전달 특성을 갖는 전계 효과 트랜지스터 및그것을 이용한 비휘발성 메모리
EP1610386A4 (de) * 2003-03-31 2009-04-01 Japan Science & Tech Agency Tunneltransistor mit spin-abhängiger transfercharakteristik und nichtflüchtiger speicher damit
KR100666729B1 (ko) * 2005-07-11 2007-01-09 한국과학기술연구원 ＺｎＳ 나노벨트 상온 자성반도체 제조방법
FR2898414B1 (fr) * 2006-03-07 2008-06-06 Commissariat Energie Atomique Composant sensible a un champ magnetique comportant un semi-conducteur magnetique dilue, dispositifs l'incorporant et procede de mise en oeuvre.
US20080012004A1 (en) * 2006-03-17 2008-01-17 Mears Technologies, Inc. Spintronic devices with constrained spintronic dopant
AU2007227418A1 (en) * 2006-03-17 2007-09-27 Mears Technologies, Inc. Spintronic devices with constrained spintronic dopant and associated methods
US7342244B2 (en) * 2006-07-19 2008-03-11 Tokyo Electron Limited Spintronic transistor
KR100869290B1 (ko) * 2007-04-25 2008-11-18 국민대학교산학협력단 양성자 주입에 따른 자성반도체 물질의 자성제어 방법
KR100953532B1 (ko) * 2007-10-09 2010-04-21 한국과학기술연구원 나노자성체/자성반도체 하이브리드형 스핀 소자 및 그 제조방법
EP2400558A4 (de) * 2009-02-20 2013-08-21 Nat Univ Corp Kyoto Inst Tech Lichtabsorbierendes material und dieses verwendendes fotoelektrisches wandlungselement
KR101039384B1 (ko) * 2009-05-28 2011-06-08 한국기초과학지원연구원 스핀소자를 이용한 이완발진기
JP5443502B2 (ja) * 2009-09-18 2014-03-19 株式会社東芝 半導体装置およびその製造方法
EP2549546A4 (de) * 2010-03-18 2017-08-23 National University Corporation Kyoto Institute of Technology Lichtabsorbierendes material und dieses verwendendes fotoelektrisches wandlungselement
FR2971364B1 (fr) * 2011-02-07 2013-02-15 Centre Nat Rech Scient Agencement optimise de particules de triazole
DE102013209278B4 (de) * 2013-05-17 2016-02-18 Helmholtz-Zentrum Dresden - Rossendorf E.V. Magnetisierbare Halbleiter mit permanenter Magnetisierung und deren Verwendung
NZ725497A (en) * 2014-04-02 2020-05-29 Franck Natali Magnetic materials and devices comprising rare earth nitrides
DE102015221521A1 (de) 2015-11-03 2017-05-04 Forschungszentrum Jülich GmbH Tunneldiode und -transistor
US9966901B2 (en) * 2015-11-19 2018-05-08 Samsung Electronics Co., Ltd. Spin-torque oscillator based on easy-cone anisotropy
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CN116013961B (zh) * 2023-03-24 2023-06-02 北京大学 一种表面自氧化的氮化镓自旋注入结制备方法

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Also Published As

Publication number Publication date
US20040041217A1 (en) 2004-03-04
KR100492482B1 (ko) 2005-06-03
US7063986B2 (en) 2006-06-20
EP1396867A1 (de) 2004-03-10
US20050045976A1 (en) 2005-03-03
DE60320191D1 (de) 2008-05-21
JP2004104070A (ja) 2004-04-02
KR20040021459A (ko) 2004-03-10
DE60320191T2 (de) 2009-06-25
EP1396867B1 (de) 2008-04-09

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