ATE376259T1 - Herstellungsverfahren für einen magnetischen tunnelübergang - Google Patents

Herstellungsverfahren für einen magnetischen tunnelübergang

Info

Publication number
ATE376259T1
ATE376259T1 AT02253351T AT02253351T ATE376259T1 AT E376259 T1 ATE376259 T1 AT E376259T1 AT 02253351 T AT02253351 T AT 02253351T AT 02253351 T AT02253351 T AT 02253351T AT E376259 T1 ATE376259 T1 AT E376259T1
Authority
AT
Austria
Prior art keywords
magnetic
magnetic layer
magnetic tunnel
tunnel barrier
production process
Prior art date
Application number
AT02253351T
Other languages
English (en)
Inventor
Kyung-Ho Shin
Woo-Young Lee
Young-Joon Park
Kyung-Il Lee
Jae-Geun Ha
Original Assignee
Korea Inst Sci & Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Inst Sci & Tech filed Critical Korea Inst Sci & Tech
Application granted granted Critical
Publication of ATE376259T1 publication Critical patent/ATE376259T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/305—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
    • H01F41/307—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling insulating or semiconductive spacer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49043—Depositing magnetic layer or coating
    • Y10T29/49044—Plural magnetic deposition layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Mram Or Spin Memory Techniques (AREA)
AT02253351T 2001-05-15 2002-05-14 Herstellungsverfahren für einen magnetischen tunnelübergang ATE376259T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2001-0026486A KR100407907B1 (ko) 2001-05-15 2001-05-15 자기 터널 접합 소자의 열처리 방법과 그 방법으로 제조된자기 터널 접합 소자

Publications (1)

Publication Number Publication Date
ATE376259T1 true ATE376259T1 (de) 2007-11-15

Family

ID=19709492

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02253351T ATE376259T1 (de) 2001-05-15 2002-05-14 Herstellungsverfahren für einen magnetischen tunnelübergang

Country Status (6)

Country Link
US (1) US6848169B2 (de)
EP (1) EP1258930B1 (de)
JP (1) JP4498660B2 (de)
KR (1) KR100407907B1 (de)
AT (1) ATE376259T1 (de)
DE (1) DE60222963T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079632A (ja) * 2002-08-12 2004-03-11 Toshiba Corp 半導体集積回路装置
KR20040083934A (ko) * 2003-03-25 2004-10-06 주식회사 하이닉스반도체 마그네틱 램의 형성방법
US7054085B2 (en) * 2003-06-30 2006-05-30 Hitachi Global Storage Technologies Netherlands B.V. Use of shunt resistor with large RA product tunnel barriers
JP2006059963A (ja) * 2004-08-19 2006-03-02 Tohoku Univ トンネル型磁気抵抗素子、その製造方法およびその製造装置
JP4101240B2 (ja) * 2005-01-28 2008-06-18 Ｔｄｋ株式会社 磁気ヘッド
US7695761B1 (en) 2006-12-21 2010-04-13 Western Digital (Fremont), Llc Method and system for providing a spin tunneling magnetic element having a crystalline barrier layer
US8559141B1 (en) 2007-05-07 2013-10-15 Western Digital (Fremont), Llc Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface
US8545999B1 (en) 2008-02-21 2013-10-01 Western Digital (Fremont), Llc Method and system for providing a magnetoresistive structure
US8381391B2 (en) * 2009-06-26 2013-02-26 Western Digital (Fremont), Llc Method for providing a magnetic recording transducer
US8498084B1 (en) 2009-07-21 2013-07-30 Western Digital (Fremont), Llc Magnetoresistive sensors having an improved free layer
US8194365B1 (en) 2009-09-03 2012-06-05 Western Digital (Fremont), Llc Method and system for providing a read sensor having a low magnetostriction free layer
US8336194B2 (en) * 2009-11-03 2012-12-25 Western Digital (Fremont), Llc Method of fabricating a tunneling magnetoresistive (TMR) reader
US9054298B2 (en) * 2010-12-10 2015-06-09 Avalanche Technology, Inc. Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same
US8760819B1 (en) 2010-12-23 2014-06-24 Western Digital (Fremont), Llc Magnetic recording sensor with sputtered antiferromagnetic coupling trilayer between plated ferromagnetic shields
US9880232B2 (en) * 2012-03-14 2018-01-30 Seagate Technology Llc Magnetic sensor manufacturing
CN102832336A (zh) * 2012-08-28 2012-12-19 淮阴工学院 激光退火提高铁磁/反铁磁双层膜交换偏置场热稳定性方法
US8797692B1 (en) 2012-09-07 2014-08-05 Western Digital (Fremont), Llc Magnetic recording sensor with AFM exchange coupled shield stabilization
US9064534B1 (en) 2012-11-30 2015-06-23 Western Digital (Fremont), Llc Process for providing a magnetic recording transducer with enhanced pinning layer stability
TWI501224B (zh) * 2013-03-07 2015-09-21 Nat Univ Tsing Hua 磁性電子裝置及其製造方法
US8780505B1 (en) 2013-03-12 2014-07-15 Western Digital (Fremont), Llc Method and system for providing a read transducer having an improved composite magnetic shield
US9013836B1 (en) 2013-04-02 2015-04-21 Western Digital (Fremont), Llc Method and system for providing an antiferromagnetically coupled return pole
US9070381B1 (en) 2013-04-12 2015-06-30 Western Digital (Fremont), Llc Magnetic recording read transducer having a laminated free layer
US9431047B1 (en) 2013-05-01 2016-08-30 Western Digital (Fremont), Llc Method for providing an improved AFM reader shield
US9361913B1 (en) 2013-06-03 2016-06-07 Western Digital (Fremont), Llc Recording read heads with a multi-layer AFM layer methods and apparatuses
US9287494B1 (en) 2013-06-28 2016-03-15 Western Digital (Fremont), Llc Magnetic tunnel junction (MTJ) with a magnesium oxide tunnel barrier
US9076954B2 (en) 2013-08-08 2015-07-07 Samsung Electronics Co., Ltd. Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices
US9147408B1 (en) 2013-12-19 2015-09-29 Western Digital (Fremont), Llc Heated AFM layer deposition and cooling process for TMR magnetic recording sensor with high pinning field
KR20160056376A (ko) * 2014-11-10 2016-05-20 삼성전자주식회사 금속 산화막을 형성하는 방법 및 이를 포함하는 자기 메모리 장치
US10074387B1 (en) 2014-12-21 2018-09-11 Western Digital (Fremont), Llc Method and system for providing a read transducer having symmetric antiferromagnetically coupled shields
CN105280809B (zh) * 2015-09-14 2018-03-27 华中科技大学 一种磁隧道结及其制备方法
US10622406B2 (en) * 2018-07-03 2020-04-14 International Business Machines Corporation Dual metal nitride landing pad for MRAM devices

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
KR100262282B1 (ko) * 1996-04-30 2000-10-02 니시무로 타이죠 자기 저항 효과 소자
US5729410A (en) * 1996-11-27 1998-03-17 International Business Machines Corporation Magnetic tunnel junction device with longitudinal biasing
US6391658B1 (en) * 1999-10-26 2002-05-21 International Business Machines Corporation Formation of arrays of microelectronic elements
US6359289B1 (en) * 2000-04-19 2002-03-19 International Business Machines Corporation Magnetic tunnel junction device with improved insulating tunnel barrier
JP4693292B2 (ja) * 2000-09-11 2011-06-01 株式会社東芝 強磁性トンネル接合素子およびその製造方法
US20020131215A1 (en) * 2001-03-14 2002-09-19 Beach Robert S. Tunnel junction and charge perpendicular-to-plane magnetic recording sensors and method of manufacture
US6649423B2 (en) * 2001-10-04 2003-11-18 Hewlett-Packard Development Company, L.P. Method for modifying switching field characteristics of magnetic tunnel junctions
US6518588B1 (en) * 2001-10-17 2003-02-11 International Business Machines Corporation Magnetic random access memory with thermally stable magnetic tunnel junction cells
US6822838B2 (en) * 2002-04-02 2004-11-23 International Business Machines Corporation Dual magnetic tunnel junction sensor with a longitudinal bias stack

Also Published As

Publication number Publication date
JP2003069113A (ja) 2003-03-07
EP1258930B1 (de) 2007-10-17
DE60222963D1 (de) 2007-11-29
JP4498660B2 (ja) 2010-07-07
KR20020087640A (ko) 2002-11-23
US6848169B2 (en) 2005-02-01
KR100407907B1 (ko) 2003-12-03
US20020185196A1 (en) 2002-12-12
EP1258930A3 (de) 2005-11-16
DE60222963T2 (de) 2008-07-31
EP1258930A2 (de) 2002-11-20

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