ATE365966T1 - Doppelschleifenleseschaltung für resistive speicherelemente - Google Patents
Doppelschleifenleseschaltung für resistive speicherelementeInfo
- Publication number
- ATE365966T1 ATE365966T1 AT06004176T AT06004176T ATE365966T1 AT E365966 T1 ATE365966 T1 AT E365966T1 AT 06004176 T AT06004176 T AT 06004176T AT 06004176 T AT06004176 T AT 06004176T AT E365966 T1 ATE365966 T1 AT E365966T1
- Authority
- AT
- Austria
- Prior art keywords
- signal
- resistive element
- resistive memory
- resistance
- voltage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1693—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0061—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Static Random-Access Memory (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/222,843 US6829188B2 (en) | 2002-08-19 | 2002-08-19 | Dual loop sensing scheme for resistive memory elements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE365966T1 true ATE365966T1 (de) | 2007-07-15 |
Family
ID=31715073
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06014004T ATE441929T1 (de) | 2002-08-19 | 2003-07-30 | Doppelschleifenleseschaltung für resistive speicherlemente |
| AT03788292T ATE365965T1 (de) | 2002-08-19 | 2003-07-30 | Doppelschleifen leseschema für widerstands- speicherzellen |
| AT06004176T ATE365966T1 (de) | 2002-08-19 | 2003-07-30 | Doppelschleifenleseschaltung für resistive speicherelemente |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06014004T ATE441929T1 (de) | 2002-08-19 | 2003-07-30 | Doppelschleifenleseschaltung für resistive speicherlemente |
| AT03788292T ATE365965T1 (de) | 2002-08-19 | 2003-07-30 | Doppelschleifen leseschema für widerstands- speicherzellen |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US6829188B2 (de) |
| EP (3) | EP1532633B1 (de) |
| JP (1) | JP2005536820A (de) |
| KR (1) | KR100679458B1 (de) |
| CN (3) | CN1689109B (de) |
| AT (3) | ATE441929T1 (de) |
| AU (1) | AU2003254265A1 (de) |
| DE (3) | DE60314672T2 (de) |
| TW (1) | TWI313000B (de) |
| WO (1) | WO2004017326A2 (de) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6504750B1 (en) * | 2001-08-27 | 2003-01-07 | Micron Technology, Inc. | Resistive memory element sensing using averaging |
| US6826102B2 (en) * | 2002-05-16 | 2004-11-30 | Micron Technology, Inc. | Noise resistant small signal sensing circuit for a memory device |
| US6882553B2 (en) * | 2002-08-08 | 2005-04-19 | Micron Technology Inc. | Stacked columnar resistive memory structure and its method of formation and operation |
| FR2846776A1 (fr) * | 2002-10-30 | 2004-05-07 | St Microelectronics Sa | Cellule memoire a trois etats |
| US6980477B2 (en) * | 2002-12-07 | 2005-12-27 | Hewlett-Packard Development Company, L.P. | Chopper sensor for MRAM |
| US6826094B1 (en) * | 2003-06-02 | 2004-11-30 | Hewlett-Packard Development Company, L.P. | Magnetic memory cell sensing with first and second currents |
| US7042783B2 (en) * | 2003-06-18 | 2006-05-09 | Hewlett-Packard Development Company, L.P. | Magnetic memory |
| EP3179309A1 (de) * | 2003-07-08 | 2017-06-14 | Nikon Corporation | Waferplatte für die immersionslithografie |
| US6970387B2 (en) * | 2003-09-15 | 2005-11-29 | Hewlett-Packard Development Company, L.P. | System and method for determining the value of a memory element |
| US7663442B2 (en) * | 2005-03-28 | 2010-02-16 | Intel Corporation | Data receiver including a transconductance amplifier |
| US8088478B2 (en) * | 2005-06-21 | 2012-01-03 | Weyerhaeuser Nr Company | Barrier material |
| US7397689B2 (en) * | 2006-08-09 | 2008-07-08 | Micron Technology, Inc. | Resistive memory device |
| US7818638B2 (en) | 2007-06-15 | 2010-10-19 | Micron Technology, Inc. | Systems and devices including memory with built-in self test and methods of making and using the same |
| US7839703B2 (en) | 2007-06-15 | 2010-11-23 | Micron Technology, Inc. | Subtraction circuits and digital-to-analog converters for semiconductor devices |
| US8117520B2 (en) | 2007-06-15 | 2012-02-14 | Micron Technology, Inc. | Error detection for multi-bit memory |
| US7817073B2 (en) | 2007-06-15 | 2010-10-19 | Micron Technology, Inc. | Integrators for delta-sigma modulators |
| US7969783B2 (en) | 2007-06-15 | 2011-06-28 | Micron Technology, Inc. | Memory with correlated resistance |
| US8068367B2 (en) | 2007-06-15 | 2011-11-29 | Micron Technology, Inc. | Reference current sources |
| US7733262B2 (en) * | 2007-06-15 | 2010-06-08 | Micron Technology, Inc. | Quantizing circuits with variable reference signals |
| US7667632B2 (en) | 2007-06-15 | 2010-02-23 | Micron Technology, Inc. | Quantizing circuits for semiconductor devices |
| US7768868B2 (en) | 2007-06-15 | 2010-08-03 | Micron Technology, Inc. | Digital filters for semiconductor devices |
| US7830729B2 (en) | 2007-06-15 | 2010-11-09 | Micron Technology, Inc. | Digital filters with memory |
| US7538702B2 (en) | 2007-06-15 | 2009-05-26 | Micron Technology, Inc. | Quantizing circuits with variable parameters |
| US9135962B2 (en) | 2007-06-15 | 2015-09-15 | Micron Technology, Inc. | Comparators for delta-sigma modulators |
| WO2009153838A1 (ja) * | 2008-06-20 | 2009-12-23 | 富士通株式会社 | 受信装置 |
| US7864609B2 (en) | 2008-06-30 | 2011-01-04 | Micron Technology, Inc. | Methods for determining resistance of phase change memory elements |
| US20110140708A1 (en) * | 2009-12-11 | 2011-06-16 | William Henry Lueckenbach | System, method, and apparatus for providing redundant power control using a digital output module |
| JP4928618B2 (ja) * | 2010-02-03 | 2012-05-09 | 日清紡ホールディングス株式会社 | 蓄電モジュール制御装置 |
| US8194441B2 (en) | 2010-09-23 | 2012-06-05 | Micron Technology, Inc. | Phase change memory state determination using threshold edge detection |
| KR101298190B1 (ko) | 2011-10-13 | 2013-08-20 | 에스케이하이닉스 주식회사 | 저항성 메모리 장치, 그 레이아웃 구조 및 센싱 회로 |
| US8711646B2 (en) * | 2012-05-08 | 2014-04-29 | Samsung Electronics Co., Ltd. | Architecture, system and method for testing resistive type memory |
| US9111622B2 (en) | 2012-05-09 | 2015-08-18 | Everspin Technologies, Inc. | Self referencing sense amplifier for spin torque MRAM |
| KR20150022242A (ko) * | 2013-08-22 | 2015-03-04 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
| US9761309B2 (en) | 2014-02-28 | 2017-09-12 | Hewlett Packard Enterprise Development Lp | Sensing circuit for resistive memory array |
| CN105448331B (zh) * | 2014-08-22 | 2017-12-01 | 华邦电子股份有限公司 | 电阻式随机存取存储器电路以及读取方法 |
| KR102431206B1 (ko) * | 2015-12-23 | 2022-08-11 | 에스케이하이닉스 주식회사 | 전자 장치 |
| US9721636B1 (en) * | 2016-01-28 | 2017-08-01 | Western Digital Technologies, Inc. | Method for controlled switching of a MRAM device |
| KR102476770B1 (ko) * | 2016-04-08 | 2022-12-13 | 에스케이하이닉스 주식회사 | 전자 장치 |
| CN105978625A (zh) * | 2016-06-27 | 2016-09-28 | 佛山市南海区联合广东新光源产业创新中心 | 一种具有电阻阵列的可见光通信装置 |
| CN106027145A (zh) * | 2016-06-27 | 2016-10-12 | 佛山市南海区联合广东新光源产业创新中心 | 一种可见光通信切换及控制方法 |
| GB2555481B (en) * | 2016-11-01 | 2019-07-17 | Evonetix Ltd | Resistance measurement |
| JP2018085155A (ja) * | 2016-11-21 | 2018-05-31 | 東芝メモリ株式会社 | 磁気メモリ |
| US10714185B2 (en) * | 2018-10-24 | 2020-07-14 | Micron Technology, Inc. | Event counters for memory operations |
| CN113035255B (zh) * | 2021-03-30 | 2022-01-07 | 长江存储科技有限责任公司 | 存储器及其操作方法、装置、存储介质 |
| JP2023039160A (ja) * | 2021-09-08 | 2023-03-20 | キオクシア株式会社 | 磁気メモリデバイス |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09140126A (ja) * | 1995-05-30 | 1997-05-27 | Linear Technol Corp | 適応スイッチ回路、適応出力回路、制御回路およびスイッチング電圧レギュレータを動作させる方法 |
| US6038166A (en) * | 1998-04-01 | 2000-03-14 | Invox Technology | High resolution multi-bit-per-cell memory |
| DE19914488C1 (de) * | 1999-03-30 | 2000-05-31 | Siemens Ag | Vorrichtung zur Bewertung der Zellenwiderstände in einem magnetoresistiven Speicher |
| US6188615B1 (en) * | 1999-10-29 | 2001-02-13 | Hewlett-Packard Company | MRAM device including digital sense amplifiers |
| US6433525B2 (en) * | 2000-05-03 | 2002-08-13 | Intersil Americas Inc. | Dc to DC converter method and circuitry |
| US6317375B1 (en) * | 2000-08-31 | 2001-11-13 | Hewlett-Packard Company | Method and apparatus for reading memory cells of a resistive cross point array |
| DE10059182C2 (de) * | 2000-11-29 | 2002-10-24 | Infineon Technologies Ag | Schaltungsanordnung zum zerstörungsfreien, selbstnormierenden Auslesen von MRAM-Speicherzellen |
| US6693826B1 (en) * | 2001-07-30 | 2004-02-17 | Iowa State University Research Foundation, Inc. | Magnetic memory sensing method and apparatus |
| US6504750B1 (en) * | 2001-08-27 | 2003-01-07 | Micron Technology, Inc. | Resistive memory element sensing using averaging |
| US6577525B2 (en) * | 2001-08-28 | 2003-06-10 | Micron Technology, Inc. | Sensing method and apparatus for resistance memory device |
-
2002
- 2002-08-19 US US10/222,843 patent/US6829188B2/en not_active Expired - Lifetime
-
2003
- 2003-07-30 EP EP03788292A patent/EP1532633B1/de not_active Expired - Lifetime
- 2003-07-30 EP EP06014004A patent/EP1717813B1/de not_active Expired - Lifetime
- 2003-07-30 AT AT06014004T patent/ATE441929T1/de not_active IP Right Cessation
- 2003-07-30 EP EP06004176A patent/EP1667161B1/de not_active Expired - Lifetime
- 2003-07-30 DE DE60314672T patent/DE60314672T2/de not_active Expired - Lifetime
- 2003-07-30 KR KR1020057002830A patent/KR100679458B1/ko active IP Right Grant
- 2003-07-30 CN CN038243245A patent/CN1689109B/zh not_active Expired - Lifetime
- 2003-07-30 AT AT03788292T patent/ATE365965T1/de not_active IP Right Cessation
- 2003-07-30 DE DE60314642T patent/DE60314642T2/de not_active Expired - Lifetime
- 2003-07-30 WO PCT/US2003/023794 patent/WO2004017326A2/en active IP Right Grant
- 2003-07-30 AU AU2003254265A patent/AU2003254265A1/en not_active Abandoned
- 2003-07-30 JP JP2004529210A patent/JP2005536820A/ja active Pending
- 2003-07-30 CN CN201310283721.3A patent/CN103366807B/zh not_active Expired - Lifetime
- 2003-07-30 AT AT06004176T patent/ATE365966T1/de not_active IP Right Cessation
- 2003-07-30 DE DE60329130T patent/DE60329130D1/de not_active Expired - Lifetime
- 2003-07-30 CN CN2009102088919A patent/CN101814312B/zh not_active Expired - Lifetime
- 2003-08-08 TW TW092121854A patent/TWI313000B/zh not_active IP Right Cessation
-
2004
- 2004-08-16 US US10/918,453 patent/US6914838B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20040032760A1 (en) | 2004-02-19 |
| CN103366807A (zh) | 2013-10-23 |
| US6914838B2 (en) | 2005-07-05 |
| CN101814312A (zh) | 2010-08-25 |
| DE60329130D1 (de) | 2009-10-15 |
| WO2004017326A2 (en) | 2004-02-26 |
| CN1689109B (zh) | 2011-10-26 |
| ATE441929T1 (de) | 2009-09-15 |
| EP1717813B1 (de) | 2009-09-02 |
| EP1717813A3 (de) | 2007-02-14 |
| AU2003254265A1 (en) | 2004-03-03 |
| EP1667161A1 (de) | 2006-06-07 |
| EP1717813A2 (de) | 2006-11-02 |
| EP1667161B1 (de) | 2007-06-27 |
| DE60314672D1 (de) | 2007-08-09 |
| US20050013184A1 (en) | 2005-01-20 |
| CN103366807B (zh) | 2016-12-28 |
| KR100679458B1 (ko) | 2007-02-06 |
| CN1689109A (zh) | 2005-10-26 |
| ATE365965T1 (de) | 2007-07-15 |
| EP1532633A1 (de) | 2005-05-25 |
| TWI313000B (en) | 2009-08-01 |
| DE60314642D1 (de) | 2007-08-09 |
| US6829188B2 (en) | 2004-12-07 |
| TW200414190A (en) | 2004-08-01 |
| JP2005536820A (ja) | 2005-12-02 |
| CN101814312B (zh) | 2013-08-07 |
| KR20050042482A (ko) | 2005-05-09 |
| DE60314672T2 (de) | 2008-03-06 |
| DE60314642T2 (de) | 2008-02-28 |
| EP1532633B1 (de) | 2007-06-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties | ||
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |