US6970387B2 - System and method for determining the value of a memory element - Google Patents

System and method for determining the value of a memory element Download PDF

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US6970387B2
US6970387B2 US10/662,643 US66264303A US6970387B2 US 6970387 B2 US6970387 B2 US 6970387B2 US 66264303 A US66264303 A US 66264303A US 6970387 B2 US6970387 B2 US 6970387B2
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Prior art keywords
memory element
column
memory elements
desired memory
interest
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US20050057974A1 (en
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Kenneth K. Smith
Richard L. Hilton
Corbin L. Champion
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Hewlett Packard Enterprise Development LP
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Hewlett Packard Development Co LP
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Priority to DE102004023842A priority patent/DE102004023842A1/en
Priority to JP2004263172A priority patent/JP4047315B2/en
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006—Current

Definitions

  • computers are ubiquitous. For example, computers may be found in grocery stores, automobiles, airplanes, watches, or other electronic devices. Often computers include a processor that executes various functions such as mathematical computations, running programs, and retrieving and storing information.
  • a processor that retrieves and stores information may use a storage device such as a disk drive (e.g., hard disk) or memory.
  • memory devices store information in binary form—i.e., 1s and 0s. This binary information may be stored by assigning differing voltage states to binary values. For example, a binary 0 may be assigned 0 volts, while a binary 1 may be assigned 5 volts.
  • memory devices have been implemented using transistors configured to form logic gates that are able to store binary values.
  • recent trends include memory devices implemented using an array of magnetic elements that are constructed using semiconductor processing techniques.
  • an array of magnetic memory elements may comprise individual magnetic memory elements formed by using two layers of magnetic material that have adjustable magnetic orientations.
  • the magnetic materials may be formed with an insulating layer sandwiched between them. Because the magnetic materials are designed to be adjustable, the magnetic field for each material may be adjusted by applying electrical current in proximity to the material.
  • the orientations of two magnetic layers may be in the same direction (termed “parallel”), or they may be opposite each other (termed “anti-parallel”).
  • Each magnetic memory element may also have an electrical resistance.
  • the electrical resistance of the magnetic memory element may vary depending on the parallel or anti-parallel orientation of the magnetic fields. For example, parallel orientation may yield a resistance of 1 M ⁇ whereas anti-parallel orientation may produce a resistance of 1.1 M ⁇ . Because the resistance of the magnetic memory element may be changed, binary values (e.g., 1s and 0s) may be associated with the electrical resistance. Circuitry may be used to estimate the resistive value of the memory elements, and consequently determine the memory element's digital value. For one or more reasons, estimations for the resistive value of an individual memory element within the memory array may be inaccurate, which may then cause the digital value to be inaccurately determined.
  • a method for determining the memory element values may include: selecting a column of interest containing a desired memory element, disabling the desired memory element, measuring a first current provided to the column of interest, adjusting measurement circuitry to compensate for skew introduced by undesired memory elements, enabling the desired memory elements, and measuring a second current provided to the column of interest.
  • FIG. 1 shows a computer system in accordance with various embodiments
  • FIG. 2A shows a memory array in accordance with various embodiments
  • FIG. 2B shows selection of a desired memory element in accordance with various embodiments
  • FIG. 3 shows circuitry for reading a desired memory element in accordance with various embodiments.
  • FIG. 4 shows a method for determining the value of a desired memory element in accordance with various embodiments.
  • magnetic-resistive element is intended to refer to an element whose electrical resistance varies as a function of the magnetic field induced on the element.
  • FIG. 1 illustrates an exemplary computer system 100 .
  • the computer system of FIG. 1 includes a central processing unit (“CPU”) 102 that may be electrically coupled to a bridge logic device 106 via a CPU bus.
  • the bridge logic device 106 is sometimes referred to as a “North bridge.”
  • the North bridge 106 electrically couples to a main memory array 104 by a memory bus, and may further electrically couple to a graphics controller 108 via an advanced graphics processor (“AGP”) bus.
  • AGP advanced graphics processor
  • the main memory array 104 may include magnetic memory array utilizing the methods for determining memory element values disclosed below.
  • the North bridge 106 may couple CPU 102 , memory 104 , and graphics controller 108 to the other peripheral devices in the system through, for example, a primary expansion bus (“BUS A”) such as a PCI bus or an EISA bus.
  • BUS A primary expansion bus
  • Various components that operate using the bus protocol of BUS A may reside on this bus, such as an audio device 110 , an IEEE 1394 interface device 112 , and a network interface card (“NIC”) 114 .
  • NIC network interface card
  • These components may be integrated onto the motherboard, as suggested by FIG. 1 , or they may be plugged into expansion slots 118 that are connected to BUS A.
  • another bridge logic device 119 may be used to electrically couple the primary expansion bus, BUS A, to a secondary expansion bus (“BUS B”). This bridge logic 119 is sometimes referred to as a “South bridge.”
  • FIG. 2A shows a schematic representation of magnetic memory array 210 , which may be implemented in memory array 104 .
  • Memory array 210 may include magnetic memory elements 212 .
  • Memory elements 212 may be arranged in an array of columns C 0 –C N ⁇ 1 and rows R 0 –R n ⁇ 1 .
  • Individual memory elements may be depicted as resistive elements interconnecting rows and columns as shown. For example, memory element “0.0” would represent the memory element that is located at the intersection of row R 0 and column C 0 .
  • the magnetic memory elements may be modeled using a variety of devices such as capacitors, resistors, inductors, tunnel junctions in series with diodes, or other combinations of integrated circuit elements.
  • Accompanying circuitry 220 A–D may write data to and read data from the memory elements 212 .
  • Digital values may be written in memory array 210 by setting the resistance of the memory elements 212 , where various resistive values may be assigned to various digital values.
  • memory element 0.0 may contain a resistance of 1 M ⁇ for a digital ‘1’ or 1.1 M ⁇ for a digital ‘0’, although the resistances may vary as desired.
  • each memory element may be capable of being set to several distinct resistive values so that there may be N distinct data values represented by each memory element for N distinct resistive states.
  • memory element 0.0 may be set to four distinct resistive values, such as 1.0 M ⁇ , 1.1 M ⁇ , 1.2 M ⁇ , and 1.3 M ⁇ , so that memory element 0.0 may be able to represent four distinct digital values—e.g., 00, 01, 10, and 11, respectively.
  • voltage sources may be coupled to the rows R and columns C of memory array 210 , as shown in FIG. 2B . Coupling voltage sources to the array as shown offers the ability to isolate desired memory elements from undesired memory elements, while also allowing the digital value of the desired memory element to be determined.
  • memory element 0.0 may be isolated and read by coupling voltage source V Y to columns C 0 –C N-1 , voltage source V X to rows R 1 –R N ⁇ 1 , and ground to row R 0 as shown.
  • a voltage equivalent to voltage source V Y may be provided to column C 0 by read circuitry 222 .
  • memory elements 1.0 through N ⁇ 1.0 may be isolated from memory element 0.0, which may have V Y across it.
  • the current supplied to column C 0 may represent the resistance of memory element 0.0, so that the digital value of memory element 0.0 may be determined by measuring the current in column C 0 .
  • read circuitry 222 may be used to measure the current supplied to column C 0 .
  • V Y and V X may not be equal to each other and therefore the current supplied to column C 0 may also represent current in undesired memory elements, such as memory elements 1.0 through N ⁇ 1.0.
  • FIG. 3 shows an exemplary implementation of read circuitry 222 coupled to one or more memory elements 223 .
  • Circuitry 222 may be included in accompanying circuitry 220 A–D ( FIGS. 2A and 2B ).
  • memory elements 223 may include a desired memory element (i.e., a memory element that is to be measured), as well as other undesired memory elements (i.e., memory elements that may impact the measurement of the desired memory element).
  • the desired memory elements may be represented by resistance R MEM
  • the undesired memory elements may be represented by resistance R LEAK .
  • a gain stage 224 may have its negative input coupled to the memory elements 223 , its positive input coupled to a predetermined voltage V Y , and its output coupled to a controller 226 , where the controller 226 forms a negative feedback loop. Controller 226 may be used to vary the amount of current in the feedback loop, where gain stage 224 may determine the amount of current that controller 226 shall provide.
  • the undesired memory elements R LEAK may have one terminal coupled to the negative terminal of gain stage 224 , which may be at a voltage potential V X ′ as indicated in FIG. 3 , and its other terminal coupled to voltage source V X .
  • the desired memory element may have one terminal coupled to the negative terminal of gain stage 224 and the other terminal coupled to a switch 230 .
  • the gain stage 224 may attempt to maintain equal potentials at its positive and negative input nodes—i.e., V Y equal to V X ′.
  • the switch 230 may couple the desired memory element R MEM to ground or may couple the desired memory element R MEM to some other known state, such as voltage source V X or high a impedance state.
  • a current source 228 may also be coupled between a voltage supply V S and the controller 226 .
  • a voltage of approximately equal to voltage source V X may be established at the negative input of the gain stage 224 .
  • the voltages present at the input terminals may not be equal for various reasons including input offset errors of the gain stage 224 .
  • the controller 226 may moderate the current flowing from current source 228 .
  • the controller 226 may be a metal oxide semiconductor transistor (“MOSFET”).
  • the amount of current necessary to establish V X ′ at the negative input terminal may be designated as I SENSE .
  • the switch 230 may couple the desired memory element R MEM to ground.
  • the undesired memory elements R LEAK may conduct a minimal amount of current (e.g., 1 nA) and may therefore be isolated from the desired memory element R MEM .
  • I SENSE may be primarily provided to R MEM and may indicate the resistance and digital value of the desired memory element R MEM .
  • V Y and V X ′ it may be difficult to generate matching voltages for V Y and V X ′. If, V X ′ and V Y are not equal, then a portion of I SENSE may be provided to R LEAK , and consequently the digital value of the desired memory element R MEM may be skewed by the undesired memory elements R LEAK .
  • the amount of skew introduced by the undesired memory elements R LEAK may be characterized and compensated for if necessary, so that I SENSE may be used to accurately determine the digital value of R MEM . Note that this compensation may be made prior to or after measurement of I SENSE .
  • gain stage 224 may have its offset voltage adjusted to compensate for skew prior to measuring I SENSE , or I SENSE may be measured and a correction factor may be added or subtracted from I SENSE to correct for the amount of skew.
  • I SENSE may be measured at the junction between the current source 228 and the switch 226 , as indicated by I OUT .
  • read circuitry 222 may include detection circuitry (not specifically shown in FIG. 3 ) that measures the difference in the magnitude of I SENSE with switch 230 in various conducting states. For example, when switch 230 couples the desired memory element R MEM to ground, the magnitude of I SENSE may be 1.5 ⁇ A, with 1 ⁇ A flowing in R LEAK and 0.5 ⁇ A flowing in R MEM —i.e., R MEM enabled. Alternatively, when switch 230 couples the desired memory element R MEM to V X , the magnitude of I SENSE may be 1.01 ⁇ A, with 1 ⁇ A flowing in R LEAK and 0.01 ⁇ A flowing in R MEM —i.e., R MEM disabled.
  • the detection circuitry may note a 0.49 ⁇ A difference between the two values of I SENSE . Consequently, this difference may be compared to a predetermined difference amount, and then may represent the digital value of R MEM .
  • a digital ‘1’ may be represented by a difference current measurement in the range of 0.45 ⁇ A to 0.60 ⁇ A, and therefore a 0.49 ⁇ A difference may indicate a digital ‘1’.
  • read circuitry may monitor the current in the desired memory element and determine the derivative of the current while the desired memory element R MEM is being switched. In this manner, the peak value of the derivative may indicate the digital value of R MEM .
  • the current in the undesired memory elements R LEAK should be less than or equal to about five times the current in the desired memory elements R MEM .
  • FIG. 4 illustrates a possible method for determining the digital value of a desired memory element R MEM .
  • a column of interest which may contain the desired memory element R MEM , may be selected from within the memory elements 212 by coupling a voltage V Y to the appropriate columns of memory elements 212 as shown in block 500 .
  • This may include coupling read circuitry 222 to the column of interest containing the desired memory element R MEM , where, read circuitry 222 may provide the voltage V Y to the column of interest.
  • read circuitry 222 may measure the amount of current I SENSE provided to the column of interest in order to determine the digital value of the desired memory element R MEM .
  • a row of interest which may contain the desired memory element R MEM , may be isolated from other rows by coupling voltages V X (and thereby generating V X ′), to the rows which do not contain the desired memory element R MEM as shown in block 502 . Because voltage V X ′ may not equal V Y the undesired memory elements R LEAK may conduct current and the current I SENSE measured by the read circuitry 222 may not accurately reflect the digital value of the desired memory element R MEM . Switch 230 may disable the desired memory element R MEM by coupling it to V X or to a high impedance state as shown in block 504 .
  • the desired memory element R MEM coupled to voltage V X or to a high impedance state, the desired memory element R MEM may be isolated so that amount of current in the undesired memory elements R LEAK may be characterized by measuring the current I SENSE as shown in block 506 .
  • the amount of skew introduced by the undesired memory elements R LEAK may be compensated for by using various techniques—e.g., adjusting the input offset voltage of gain stage 224 .
  • gain stage 224 may include an external control line for making the input offset adjustment.
  • the desired memory element R MEM may be enabled by coupling it to ground using switch 230 as shown in block 510 .
  • read circuitry 222 may measure I SENSE as shown in block 512 . Measuring the current I SENSE after the compensating for the current consumed by the undesired memory elements R LEAK may allow the digital value of the desired memory element R MEM to be accurately determined.
  • V X ′ may be at a lower potential than V Y , and therefore the current in the undesired memory elements R LEAK may flow from the negative terminal of gain stage 224 to voltage source V X .
  • V X ′ may be at a higher potential than V Y , and therefore the current in the undesired memory elements R LEAK may flow from V X to the negative terminal of gain stage 224 .
  • the methods, memory systems, and circuitry described above for compensating for the current in the undesired memory elements R LEAK may be used regardless of the direction of the current in the undesired memory elements R LEAK .
  • the switch 230 may be implemented using a tri-state buffer. Accordingly, aspects of the embodiments may be combined together in various forms to achieve desirable results. It is intended that the following claims be interpreted to embrace all such variations and modifications.

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Abstract

A method for determining memory element values may include: selecting a column of interest containing a desired memory element, disabling the desired memory element, measuring a first current provided to the column of interest, adjusting measurement circuitry to compensate for skew introduced by undesired memory elements, enabling the desired memory elements, and measuring a second current provided to the column of interest.

Description

BACKGROUND
In today's society, computers are ubiquitous. For example, computers may be found in grocery stores, automobiles, airplanes, watches, or other electronic devices. Often computers include a processor that executes various functions such as mathematical computations, running programs, and retrieving and storing information. A processor that retrieves and stores information may use a storage device such as a disk drive (e.g., hard disk) or memory. Generally, memory devices store information in binary form—i.e., 1s and 0s. This binary information may be stored by assigning differing voltage states to binary values. For example, a binary 0 may be assigned 0 volts, while a binary 1 may be assigned 5 volts. Traditionally, memory devices have been implemented using transistors configured to form logic gates that are able to store binary values. However, recent trends include memory devices implemented using an array of magnetic elements that are constructed using semiconductor processing techniques.
One embodiment of an array of magnetic memory elements may comprise individual magnetic memory elements formed by using two layers of magnetic material that have adjustable magnetic orientations. The magnetic materials may be formed with an insulating layer sandwiched between them. Because the magnetic materials are designed to be adjustable, the magnetic field for each material may be adjusted by applying electrical current in proximity to the material. The orientations of two magnetic layers may be in the same direction (termed “parallel”), or they may be opposite each other (termed “anti-parallel”).
Each magnetic memory element may also have an electrical resistance. The electrical resistance of the magnetic memory element may vary depending on the parallel or anti-parallel orientation of the magnetic fields. For example, parallel orientation may yield a resistance of 1 MΩ whereas anti-parallel orientation may produce a resistance of 1.1 MΩ. Because the resistance of the magnetic memory element may be changed, binary values (e.g., 1s and 0s) may be associated with the electrical resistance. Circuitry may be used to estimate the resistive value of the memory elements, and consequently determine the memory element's digital value. For one or more reasons, estimations for the resistive value of an individual memory element within the memory array may be inaccurate, which may then cause the digital value to be inaccurately determined.
SUMMARY
In one exemplary embodiment, a method for determining the memory element values is disclosed. In some embodiments the method may include: selecting a column of interest containing a desired memory element, disabling the desired memory element, measuring a first current provided to the column of interest, adjusting measurement circuitry to compensate for skew introduced by undesired memory elements, enabling the desired memory elements, and measuring a second current provided to the column of interest.
BRIEF DESCRIPTION OF THE DRAWINGS
For a detailed description of the preferred embodiments of the invention, reference will now be made to the accompanying drawings in which:
FIG. 1 shows a computer system in accordance with various embodiments;
FIG. 2A shows a memory array in accordance with various embodiments;
FIG. 2B shows selection of a desired memory element in accordance with various embodiments;
FIG. 3 shows circuitry for reading a desired memory element in accordance with various embodiments; and
FIG. 4 shows a method for determining the value of a desired memory element in accordance with various embodiments.
 NOTATION AND NOMENCLATURE
Certain terms are used throughout the following description and claims to refer to particular system components. As one skilled in the art will appreciate, different companies may refer to a component by different names. This document does not intend to distinguish between components that differ in name but not function. In the following discussion and in the claims, the terms “including” and “comprising” are used in an open-ended fashion, and thus should be interpreted to mean “including, but not limited to . . . ” Also, the term “couple” or “couples” is intended to mean either an indirect or direct electrical connection. Thus, if a first device couples to a second device, that connection may be through a direct electrical connection, or through an indirect electrical connection via other devices and connections.
The term “magneto-resistive element” is intended to refer to an element whose electrical resistance varies as a function of the magnetic field induced on the element.
DETAILED DESCRIPTION OF THE EMBODIMENTS
The following discussion is directed to various embodiments of the invention. Although one or more of these embodiments may be preferred, the embodiments disclosed should not be interpreted or otherwise used as limiting the scope of the disclosure, including the claims. In addition, one skilled in the art will understand that the following description has broad application, and the discussion of any embodiment is meant only to be exemplary, and is not intended to intimate that the scope of the disclosure, including the claims, is limited to these embodiments.
FIG. 1 illustrates an exemplary computer system 100. The computer system of FIG. 1 includes a central processing unit (“CPU”) 102 that may be electrically coupled to a bridge logic device 106 via a CPU bus. The bridge logic device 106 is sometimes referred to as a “North bridge.” The North bridge 106 electrically couples to a main memory array 104 by a memory bus, and may further electrically couple to a graphics controller 108 via an advanced graphics processor (“AGP”) bus. Note that the main memory array 104 may include magnetic memory array utilizing the methods for determining memory element values disclosed below. The North bridge 106 may couple CPU 102, memory 104, and graphics controller 108 to the other peripheral devices in the system through, for example, a primary expansion bus (“BUS A”) such as a PCI bus or an EISA bus. Various components that operate using the bus protocol of BUS A may reside on this bus, such as an audio device 110, an IEEE 1394 interface device 112, and a network interface card (“NIC”) 114. These components may be integrated onto the motherboard, as suggested by FIG. 1, or they may be plugged into expansion slots 118 that are connected to BUS A. If other secondary expansion buses are provided in the computer system, another bridge logic device 119 may be used to electrically couple the primary expansion bus, BUS A, to a secondary expansion bus (“BUS B”). This bridge logic 119 is sometimes referred to as a “South bridge.”
FIG. 2A shows a schematic representation of magnetic memory array 210, which may be implemented in memory array 104. Memory array 210 may include magnetic memory elements 212. Memory elements 212 may be arranged in an array of columns C0–CN−1 and rows R0–Rn−1. Individual memory elements may be depicted as resistive elements interconnecting rows and columns as shown. For example, memory element “0.0” would represent the memory element that is located at the intersection of row R0 and column C0. Note that the magnetic memory elements may be modeled using a variety of devices such as capacitors, resistors, inductors, tunnel junctions in series with diodes, or other combinations of integrated circuit elements.
Accompanying circuitry 220A–D may write data to and read data from the memory elements 212. Digital values may be written in memory array 210 by setting the resistance of the memory elements 212, where various resistive values may be assigned to various digital values. For example, memory element 0.0 may contain a resistance of 1 MΩ for a digital ‘1’ or 1.1 MΩ for a digital ‘0’, although the resistances may vary as desired. In addition, each memory element may be capable of being set to several distinct resistive values so that there may be N distinct data values represented by each memory element for N distinct resistive states. For example, memory element 0.0 may be set to four distinct resistive values, such as 1.0 MΩ, 1.1 MΩ, 1.2 MΩ, and 1.3 MΩ, so that memory element 0.0 may be able to represent four distinct digital values—e.g., 00, 01, 10, and 11, respectively.
In order to determine the digital value contained in a memory element, voltage sources may be coupled to the rows R and columns C of memory array 210, as shown in FIG. 2B. Coupling voltage sources to the array as shown offers the ability to isolate desired memory elements from undesired memory elements, while also allowing the digital value of the desired memory element to be determined. For example, memory element 0.0 may be isolated and read by coupling voltage source VY to columns C0–CN-1, voltage source VX to rows R1–RN−1, and ground to row R0 as shown. A voltage equivalent to voltage source VY may be provided to column C0 by read circuitry 222. If VY and VX are equal, then memory elements 1.0 through N−1.0 may be isolated from memory element 0.0, which may have VY across it. With memory element 0.0 isolated from the other memory elements in the same column, the current supplied to column C0 may represent the resistance of memory element 0.0, so that the digital value of memory element 0.0 may be determined by measuring the current in column C0. In addition to providing voltage source VY to column C0, read circuitry 222 may be used to measure the current supplied to column C0. However, VY and VX may not be equal to each other and therefore the current supplied to column C0 may also represent current in undesired memory elements, such as memory elements 1.0 through N−1.0.
FIG. 3 shows an exemplary implementation of read circuitry 222 coupled to one or more memory elements 223. Circuitry 222 may be included in accompanying circuitry 220A–D (FIGS. 2A and 2B). Referring to FIG. 3, memory elements 223 may include a desired memory element (i.e., a memory element that is to be measured), as well as other undesired memory elements (i.e., memory elements that may impact the measurement of the desired memory element). The desired memory elements may be represented by resistance RMEM, while the undesired memory elements may be represented by resistance RLEAK. A gain stage 224 may have its negative input coupled to the memory elements 223, its positive input coupled to a predetermined voltage VY, and its output coupled to a controller 226, where the controller 226 forms a negative feedback loop. Controller 226 may be used to vary the amount of current in the feedback loop, where gain stage 224 may determine the amount of current that controller 226 shall provide.
The undesired memory elements RLEAK may have one terminal coupled to the negative terminal of gain stage 224, which may be at a voltage potential VX′ as indicated in FIG. 3, and its other terminal coupled to voltage source VX. The desired memory element may have one terminal coupled to the negative terminal of gain stage 224 and the other terminal coupled to a switch 230. The gain stage 224 may attempt to maintain equal potentials at its positive and negative input nodes—i.e., VY equal to VX′. The switch 230 may couple the desired memory element RMEM to ground or may couple the desired memory element RMEM to some other known state, such as voltage source VX or high a impedance state. A current source 228 may also be coupled between a voltage supply VS and the controller 226.
With the gain stage 224 configured in a negative feedback arrangement as shown in FIG. 3, a voltage of approximately equal to voltage source VX, indicated by VX′, may be established at the negative input of the gain stage 224. The voltages present at the input terminals may not be equal for various reasons including input offset errors of the gain stage 224. In establishing VX′ at the negative node of gain stage 224, the controller 226 may moderate the current flowing from current source 228. The controller 226 may be a metal oxide semiconductor transistor (“MOSFET”). The amount of current necessary to establish VX′ at the negative input terminal may be designated as ISENSE. Under normal memory operation, the switch 230 may couple the desired memory element RMEM to ground. If VX′ and VY are equal to each other, the undesired memory elements RLEAK may conduct a minimal amount of current (e.g., 1 nA) and may therefore be isolated from the desired memory element RMEM. In this manner, ISENSE may be primarily provided to RMEM and may indicate the resistance and digital value of the desired memory element RMEM.
In some situations, it may be difficult to generate matching voltages for VY and VX′. If, VX′ and VY are not equal, then a portion of ISENSE may be provided to RLEAK, and consequently the digital value of the desired memory element RMEM may be skewed by the undesired memory elements RLEAK. Using switch 230, the amount of skew introduced by the undesired memory elements RLEAK may be characterized and compensated for if necessary, so that ISENSE may be used to accurately determine the digital value of RMEM. Note that this compensation may be made prior to or after measurement of ISENSE. For example, gain stage 224 may have its offset voltage adjusted to compensate for skew prior to measuring ISENSE, or ISENSE may be measured and a correction factor may be added or subtracted from ISENSE to correct for the amount of skew. ISENSE may be measured at the junction between the current source 228 and the switch 226, as indicated by IOUT.
Additionally, read circuitry 222 may include detection circuitry (not specifically shown in FIG. 3) that measures the difference in the magnitude of ISENSE with switch 230 in various conducting states. For example, when switch 230 couples the desired memory element RMEM to ground, the magnitude of ISENSE may be 1.5 μA, with 1 μA flowing in RLEAK and 0.5 μA flowing in RMEM—i.e., RMEM enabled. Alternatively, when switch 230 couples the desired memory element RMEM to VX, the magnitude of ISENSE may be 1.01 μA, with 1 μA flowing in RLEAK and 0.01 μA flowing in RMEM—i.e., RMEM disabled. In this example, the detection circuitry may note a 0.49 μA difference between the two values of ISENSE. Consequently, this difference may be compared to a predetermined difference amount, and then may represent the digital value of RMEM. For example, a digital ‘1’ may be represented by a difference current measurement in the range of 0.45 μA to 0.60 μA, and therefore a 0.49 μA difference may indicate a digital ‘1’.
In addition, read circuitry may monitor the current in the desired memory element and determine the derivative of the current while the desired memory element RMEM is being switched. In this manner, the peak value of the derivative may indicate the digital value of RMEM.
In at least some embodiments, the current in the undesired memory elements RLEAK should be less than or equal to about five times the current in the desired memory elements RMEM.
FIG. 4 illustrates a possible method for determining the digital value of a desired memory element RMEM. A column of interest, which may contain the desired memory element RMEM, may be selected from within the memory elements 212 by coupling a voltage VY to the appropriate columns of memory elements 212 as shown in block 500. This may include coupling read circuitry 222 to the column of interest containing the desired memory element RMEM, where, read circuitry 222 may provide the voltage VY to the column of interest. Note that read circuitry 222 may measure the amount of current ISENSE provided to the column of interest in order to determine the digital value of the desired memory element RMEM. A row of interest, which may contain the desired memory element RMEM, may be isolated from other rows by coupling voltages VX (and thereby generating VX′), to the rows which do not contain the desired memory element RMEM as shown in block 502. Because voltage VX′ may not equal VY the undesired memory elements RLEAK may conduct current and the current ISENSE measured by the read circuitry 222 may not accurately reflect the digital value of the desired memory element RMEM. Switch 230 may disable the desired memory element RMEM by coupling it to VX or to a high impedance state as shown in block 504.
With the desired memory element RMEM coupled to voltage VX or to a high impedance state, the desired memory element RMEM may be isolated so that amount of current in the undesired memory elements RLEAK may be characterized by measuring the current ISENSE as shown in block 506. In block 508, the amount of skew introduced by the undesired memory elements RLEAK may be compensated for by using various techniques—e.g., adjusting the input offset voltage of gain stage 224. As shown in FIG. 3, gain stage 224 may include an external control line for making the input offset adjustment. The desired memory element RMEM may be enabled by coupling it to ground using switch 230 as shown in block 510. With the desired memory element RMEM enabled, read circuitry 222 may measure ISENSE as shown in block 512. Measuring the current ISENSE after the compensating for the current consumed by the undesired memory elements RLEAK may allow the digital value of the desired memory element RMEM to be accurately determined.
Note that the above discussion and Figures address the situation where VX′ may be at a lower potential than VY, and therefore the current in the undesired memory elements RLEAK may flow from the negative terminal of gain stage 224 to voltage source VX. However, VX′ may be at a higher potential than VY, and therefore the current in the undesired memory elements RLEAK may flow from VX to the negative terminal of gain stage 224. Accordingly, the methods, memory systems, and circuitry described above for compensating for the current in the undesired memory elements RLEAK may be used regardless of the direction of the current in the undesired memory elements RLEAK.
The above discussion is meant to be illustrative of the principles and various embodiments of the present invention. Numerous variations and modifications will become apparent to those skilled in the art once the above disclosure is fully appreciated. For example, the switch 230 may be implemented using a tri-state buffer. Accordingly, aspects of the embodiments may be combined together in various forms to achieve desirable results. It is intended that the following claims be interpreted to embrace all such variations and modifications.

Claims (16)

1. A method of determining the value of a memory element within a plurality of memory elements, comprising:
selecting a column of interest containing a desired memory element;
disabling the desired memory element;
measuring a first current provided to the column of interest;
adjusting measurement circuitry to compensate for skew introduced by undesired memory elements;
enabling the desired memory element; and
measuring a second current provided to the column of interest.
2. The method according to claim 1, wherein the memory elements comprise magnetic memory elements.
3. The method according to claim 2, wherein the memory elements further comprise magneto-resistive memory elements.
4. The method according to claim 1, wherein selecting a column of interest includes coupling voltages to various columns.
5. The method of claim 1, wherein disabling the desired memory element includes coupling the desired memory element to a high impedance state.
6. The method of claim 1 wherein disabling the desired memory element includes coupling the desired memory element to a known voltage.
7. The method of claim 1, wherein the current is measured using read circuitry coupled to the column of interest.
8. The method of claim 7, wherein adjusting includes altering the input offset voltage of the read circuitry.
9. The method of claim 7, wherein the first current measurement corresponds to the skew introduced by undesired memory elements.
10. The method of claim 7, wherein the second current measurement corresponds to the digital value of the desired memory element.
11. The method of claim 1, wherein enabling includes coupling the desired memory element to ground.
12. A method of evaluating magnetic memory, comprising:
selecting a column of interest containing a desired memory element;
measuring the current provided to the column of interest;
disabling the desired memory element; and
enabling the desired memory element;
monitoring the measured current value during the disabling and enabling of the desired memory element.
13. The method of claim 12, wherein monitoring includes determining the derivative of the measured current value.
14. The method of claim 13, wherein the digital value of the memory element is indicated by the peak value of the derivative.
15. The method according to claim 14, wherein the memory elements comprise magnetic memory arrays.
16. The method according to claim 15, wherein the memory arrays further comprise magneto-resistive memory elements.
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US7324370B2 (en) 2008-01-29

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