ATE349774T1 - Pufferstruktur für heteroepitaxie auf einem siliziumsubstrat - Google Patents

Pufferstruktur für heteroepitaxie auf einem siliziumsubstrat

Info

Publication number
ATE349774T1
ATE349774T1 AT04711402T AT04711402T ATE349774T1 AT E349774 T1 ATE349774 T1 AT E349774T1 AT 04711402 T AT04711402 T AT 04711402T AT 04711402 T AT04711402 T AT 04711402T AT E349774 T1 ATE349774 T1 AT E349774T1
Authority
AT
Austria
Prior art keywords
silicon substrate
buffer structure
heteroepitaxy
produce
substrate
Prior art date
Application number
AT04711402T
Other languages
German (de)
English (en)
Inventor
David John Wallis
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Application granted granted Critical
Publication of ATE349774T1 publication Critical patent/ATE349774T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3254—Graded layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT04711402T 2003-02-19 2004-02-16 Pufferstruktur für heteroepitaxie auf einem siliziumsubstrat ATE349774T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0303784A GB2398672A (en) 2003-02-19 2003-02-19 Group IIIA nitride buffer layers

Publications (1)

Publication Number Publication Date
ATE349774T1 true ATE349774T1 (de) 2007-01-15

Family

ID=9953280

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04711402T ATE349774T1 (de) 2003-02-19 2004-02-16 Pufferstruktur für heteroepitaxie auf einem siliziumsubstrat

Country Status (8)

Country Link
US (1) US7323764B2 (https=)
EP (1) EP1595280B8 (https=)
JP (1) JP4493646B2 (https=)
CN (1) CN100382244C (https=)
AT (1) ATE349774T1 (https=)
DE (1) DE602004003910T2 (https=)
GB (2) GB2398672A (https=)
WO (1) WO2004075249A2 (https=)

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US8106381B2 (en) * 2006-10-18 2012-01-31 Translucent, Inc. Semiconductor structures with rare-earths
US8157914B1 (en) 2007-02-07 2012-04-17 Chien-Min Sung Substrate surface modifications for compositional gradation of crystalline materials and associated products
US7799600B2 (en) 2007-05-31 2010-09-21 Chien-Min Sung Doped diamond LED devices and associated methods
US8039737B2 (en) * 2007-07-26 2011-10-18 Translucent, Inc. Passive rare earth tandem solar cell
US8049100B2 (en) * 2007-07-26 2011-11-01 Translucent, Inc. Multijunction rare earth solar cell
US8039738B2 (en) * 2007-07-26 2011-10-18 Translucent, Inc. Active rare earth tandem solar cell
WO2009096931A1 (en) * 2008-01-28 2009-08-06 Amit Goyal Semiconductor-based large-area flexible electronic devices
DE102009000514A1 (de) * 2009-01-30 2010-08-26 Robert Bosch Gmbh Verbundbauteil sowie Verfahren zum Herstellen eines Verbundbauteil
CN102714145B (zh) * 2009-03-27 2015-07-08 同和控股（集团）有限公司 第iii族氮化物半导体生长基板、外延基板、元件、自立基板及其制造方法
GB2469448A (en) * 2009-04-14 2010-10-20 Qinetiq Ltd Strain Control in Semiconductor Devices
JP5614531B2 (ja) * 2010-03-12 2014-10-29 セイコーエプソン株式会社 液体噴射ヘッド及びそれを用いた液体噴射装置並びに圧電素子
US9041027B2 (en) 2010-12-01 2015-05-26 Alliance For Sustainable Energy, Llc Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates
WO2012074524A1 (en) 2010-12-01 2012-06-07 Alliance For Sustainable Energy, Llc Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers
KR101883840B1 (ko) * 2011-08-31 2018-08-01 엘지이노텍 주식회사 발광소자
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US20130099357A1 (en) * 2011-10-21 2013-04-25 Rytis Dargis Strain compensated reo buffer for iii-n on silicon
US8394194B1 (en) * 2012-06-13 2013-03-12 Rytis Dargis Single crystal reo buffer on amorphous SiOx
CN108281378B (zh) * 2012-10-12 2022-06-24 住友电气工业株式会社 Iii族氮化物复合衬底、半导体器件及它们的制造方法
CN103794460B (zh) * 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于半导体装置性能改善的涂层
TWI491068B (zh) * 2012-11-08 2015-07-01 財團法人工業技術研究院 氮化物半導體結構
WO2015012218A1 (ja) * 2013-07-22 2015-01-29 日本碍子株式会社 複合基板、その製造方法、機能素子および種結晶基板
TW201810542A (zh) * 2016-06-02 2018-03-16 英商Ｉｑｅ有限公司 用於機械性地層疊不同的半導體晶圓的稀土族中間層
KR102098572B1 (ko) * 2018-12-26 2020-04-08 한국세라믹기술원 에피택시 성장을 위한 기판 소재의 탐색 장치 및 방법 그리고 이를 구현하기 위한 프로그램을 기록한 기록매체
EP3786321A3 (de) 2019-08-27 2021-03-17 Albert-Ludwigs-Universität Freiburg Verfahren und vorrichtung zur herstellung einer schicht und damit versehenes substrat
EP4281996A4 (en) * 2021-01-19 2025-06-11 Alliance for Sustainable Energy, LLC HVPE DYNAMIC BUFFER LAYERS WITH COMPOSITION GRADIENT

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Also Published As

Publication number Publication date
US7323764B2 (en) 2008-01-29
JP4493646B2 (ja) 2010-06-30
GB0303784D0 (en) 2003-03-26
GB2413898B (en) 2006-08-16
JP2006518104A (ja) 2006-08-03
EP1595280B1 (en) 2006-12-27
GB0515760D0 (en) 2005-09-07
CN100382244C (zh) 2008-04-16
EP1595280A2 (en) 2005-11-16
WO2004075249A2 (en) 2004-09-02
DE602004003910T2 (de) 2007-05-16
WO2004075249A3 (en) 2004-10-28
CN1751379A (zh) 2006-03-22
US20060145186A1 (en) 2006-07-06
GB2398672A (en) 2004-08-25
GB2413898A (en) 2005-11-09
DE602004003910D1 (de) 2007-02-08
EP1595280B8 (en) 2007-02-28

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