GB2398672A - Group IIIA nitride buffer layers - Google Patents

Group IIIA nitride buffer layers Download PDF

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Publication number
GB2398672A
GB2398672A GB0303784A GB0303784A GB2398672A GB 2398672 A GB2398672 A GB 2398672A GB 0303784 A GB0303784 A GB 0303784A GB 0303784 A GB0303784 A GB 0303784A GB 2398672 A GB2398672 A GB 2398672A
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GB
United Kingdom
Prior art keywords
layer
buffer
target material
alloy
buffer structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0303784A
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English (en)
Other versions
GB0303784D0 (en
Inventor
David John Wallis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Priority to GB0303784A priority Critical patent/GB2398672A/en
Publication of GB0303784D0 publication Critical patent/GB0303784D0/en
Priority to AT04711402T priority patent/ATE349774T1/de
Priority to EP04711402A priority patent/EP1595280B8/en
Priority to GB0515760A priority patent/GB2413898B/en
Priority to PCT/GB2004/000560 priority patent/WO2004075249A2/en
Priority to DE602004003910T priority patent/DE602004003910T2/de
Priority to JP2006502270A priority patent/JP4493646B2/ja
Priority to US10/545,911 priority patent/US7323764B2/en
Priority to CNB2004800046781A priority patent/CN100382244C/zh
Publication of GB2398672A publication Critical patent/GB2398672A/en
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3254—Graded layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB0303784A 2003-02-19 2003-02-19 Group IIIA nitride buffer layers Withdrawn GB2398672A (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
GB0303784A GB2398672A (en) 2003-02-19 2003-02-19 Group IIIA nitride buffer layers
CNB2004800046781A CN100382244C (zh) 2003-02-19 2004-02-16 用于修正硅衬底的缓冲结构
PCT/GB2004/000560 WO2004075249A2 (en) 2003-02-19 2004-02-16 Buffer structure for modifying a silicon substrate
EP04711402A EP1595280B8 (en) 2003-02-19 2004-02-16 Buffer structure for heteroepitaxy on a silicon substrate
GB0515760A GB2413898B (en) 2003-02-19 2004-02-16 Buffer structure for modifying a silicon substrate
AT04711402T ATE349774T1 (de) 2003-02-19 2004-02-16 Pufferstruktur für heteroepitaxie auf einem siliziumsubstrat
DE602004003910T DE602004003910T2 (de) 2003-02-19 2004-02-16 Pufferstruktur für Heteroepitaxie auf einem Siliciumsubstrat
JP2006502270A JP4493646B2 (ja) 2003-02-19 2004-02-16 後続のターゲット材堆積のためのシリコン基板を改質するバッファ構造および該バッファ構造を形成する方法
US10/545,911 US7323764B2 (en) 2003-02-19 2004-02-16 Buffer structure for modifying a silicon substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0303784A GB2398672A (en) 2003-02-19 2003-02-19 Group IIIA nitride buffer layers

Publications (2)

Publication Number Publication Date
GB0303784D0 GB0303784D0 (en) 2003-03-26
GB2398672A true GB2398672A (en) 2004-08-25

Family

ID=9953280

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0303784A Withdrawn GB2398672A (en) 2003-02-19 2003-02-19 Group IIIA nitride buffer layers
GB0515760A Expired - Fee Related GB2413898B (en) 2003-02-19 2004-02-16 Buffer structure for modifying a silicon substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0515760A Expired - Fee Related GB2413898B (en) 2003-02-19 2004-02-16 Buffer structure for modifying a silicon substrate

Country Status (8)

Country Link
US (1) US7323764B2 (https=)
EP (1) EP1595280B8 (https=)
JP (1) JP4493646B2 (https=)
CN (1) CN100382244C (https=)
AT (1) ATE349774T1 (https=)
DE (1) DE602004003910T2 (https=)
GB (2) GB2398672A (https=)
WO (1) WO2004075249A2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8008668B2 (en) 2007-05-31 2011-08-30 Chien-Min Sung Doped diamond LED devices and associated methods
US8157914B1 (en) 2007-02-07 2012-04-17 Chien-Min Sung Substrate surface modifications for compositional gradation of crystalline materials and associated products
EP2413350A4 (en) * 2009-03-27 2013-10-23 Dowa Holdings Co Ltd SUBSTRATE FOR GROUNDING GROUP III NITRIDE SEMICONDUCTORS, EPITACTICAL SUBSTRATE FOR GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SEMICONDUCTOR ELEMENT, FREELRAGING SUBSTRATE FOR GROUP III NITRIDE SEMICONDUCTOR, AND METHOD OF MANUFACTURING THEREOF

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EP1883103A3 (en) * 2006-07-27 2008-03-05 Interuniversitair Microelektronica Centrum Deposition of group III-nitrides on Ge
US7494911B2 (en) * 2006-09-27 2009-02-24 Intel Corporation Buffer layers for device isolation of devices grown on silicon
US8106381B2 (en) * 2006-10-18 2012-01-31 Translucent, Inc. Semiconductor structures with rare-earths
US8039737B2 (en) * 2007-07-26 2011-10-18 Translucent, Inc. Passive rare earth tandem solar cell
US8049100B2 (en) * 2007-07-26 2011-11-01 Translucent, Inc. Multijunction rare earth solar cell
US8039738B2 (en) * 2007-07-26 2011-10-18 Translucent, Inc. Active rare earth tandem solar cell
WO2009096931A1 (en) * 2008-01-28 2009-08-06 Amit Goyal Semiconductor-based large-area flexible electronic devices
DE102009000514A1 (de) * 2009-01-30 2010-08-26 Robert Bosch Gmbh Verbundbauteil sowie Verfahren zum Herstellen eines Verbundbauteil
GB2469448A (en) * 2009-04-14 2010-10-20 Qinetiq Ltd Strain Control in Semiconductor Devices
JP5614531B2 (ja) * 2010-03-12 2014-10-29 セイコーエプソン株式会社 液体噴射ヘッド及びそれを用いた液体噴射装置並びに圧電素子
US9041027B2 (en) 2010-12-01 2015-05-26 Alliance For Sustainable Energy, Llc Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates
WO2012074524A1 (en) 2010-12-01 2012-06-07 Alliance For Sustainable Energy, Llc Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers
KR101883840B1 (ko) * 2011-08-31 2018-08-01 엘지이노텍 주식회사 발광소자
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US20130099357A1 (en) * 2011-10-21 2013-04-25 Rytis Dargis Strain compensated reo buffer for iii-n on silicon
US8394194B1 (en) * 2012-06-13 2013-03-12 Rytis Dargis Single crystal reo buffer on amorphous SiOx
CN108281378B (zh) * 2012-10-12 2022-06-24 住友电气工业株式会社 Iii族氮化物复合衬底、半导体器件及它们的制造方法
CN103794460B (zh) * 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于半导体装置性能改善的涂层
TWI491068B (zh) * 2012-11-08 2015-07-01 財團法人工業技術研究院 氮化物半導體結構
WO2015012218A1 (ja) * 2013-07-22 2015-01-29 日本碍子株式会社 複合基板、その製造方法、機能素子および種結晶基板
TW201810542A (zh) * 2016-06-02 2018-03-16 英商Ｉｑｅ有限公司 用於機械性地層疊不同的半導體晶圓的稀土族中間層
KR102098572B1 (ko) * 2018-12-26 2020-04-08 한국세라믹기술원 에피택시 성장을 위한 기판 소재의 탐색 장치 및 방법 그리고 이를 구현하기 위한 프로그램을 기록한 기록매체
EP3786321A3 (de) 2019-08-27 2021-03-17 Albert-Ludwigs-Universität Freiburg Verfahren und vorrichtung zur herstellung einer schicht und damit versehenes substrat
EP4281996A4 (en) * 2021-01-19 2025-06-11 Alliance for Sustainable Energy, LLC HVPE DYNAMIC BUFFER LAYERS WITH COMPOSITION GRADIENT

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JPS50102581A (https=) * 1974-01-16 1975-08-13
US5998232A (en) * 1998-01-16 1999-12-07 Implant Sciences Corporation Planar technology for producing light-emitting devices
US6171898B1 (en) * 1997-12-17 2001-01-09 Texas Instruments Incorporated Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing

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Publication number Priority date Publication date Assignee Title
JPS50102581A (https=) * 1974-01-16 1975-08-13
US6171898B1 (en) * 1997-12-17 2001-01-09 Texas Instruments Incorporated Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing
US5998232A (en) * 1998-01-16 1999-12-07 Implant Sciences Corporation Planar technology for producing light-emitting devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8157914B1 (en) 2007-02-07 2012-04-17 Chien-Min Sung Substrate surface modifications for compositional gradation of crystalline materials and associated products
US8506707B1 (en) 2007-02-07 2013-08-13 Chien-Min Sung Substrate surface modifications for compositional gradation of crystalline materials and associated products
US8008668B2 (en) 2007-05-31 2011-08-30 Chien-Min Sung Doped diamond LED devices and associated methods
EP2413350A4 (en) * 2009-03-27 2013-10-23 Dowa Holdings Co Ltd SUBSTRATE FOR GROUNDING GROUP III NITRIDE SEMICONDUCTORS, EPITACTICAL SUBSTRATE FOR GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SEMICONDUCTOR ELEMENT, FREELRAGING SUBSTRATE FOR GROUP III NITRIDE SEMICONDUCTOR, AND METHOD OF MANUFACTURING THEREOF
US8878189B2 (en) 2009-03-27 2014-11-04 Dowa Holdings Co., Ltd. Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same

Also Published As

Publication number Publication date
US7323764B2 (en) 2008-01-29
JP4493646B2 (ja) 2010-06-30
GB0303784D0 (en) 2003-03-26
ATE349774T1 (de) 2007-01-15
GB2413898B (en) 2006-08-16
JP2006518104A (ja) 2006-08-03
EP1595280B1 (en) 2006-12-27
GB0515760D0 (en) 2005-09-07
CN100382244C (zh) 2008-04-16
EP1595280A2 (en) 2005-11-16
WO2004075249A2 (en) 2004-09-02
DE602004003910T2 (de) 2007-05-16
WO2004075249A3 (en) 2004-10-28
CN1751379A (zh) 2006-03-22
US20060145186A1 (en) 2006-07-06
GB2413898A (en) 2005-11-09
DE602004003910D1 (de) 2007-02-08
EP1595280B8 (en) 2007-02-28

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