ATE347731T1 - System und verfahren zum datensichern bei stromausfall - Google Patents
System und verfahren zum datensichern bei stromausfallInfo
- Publication number
- ATE347731T1 ATE347731T1 AT04104845T AT04104845T ATE347731T1 AT E347731 T1 ATE347731 T1 AT E347731T1 AT 04104845 T AT04104845 T AT 04104845T AT 04104845 T AT04104845 T AT 04104845T AT E347731 T1 ATE347731 T1 AT E347731T1
- Authority
- AT
- Austria
- Prior art keywords
- volatile memory
- power failure
- case
- data backup
- written
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/141—Battery and back-up supplies
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
- G06F12/0804—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/20—Employing a main memory using a specific memory technology
- G06F2212/202—Non-volatile memory
- G06F2212/2022—Flash memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Selective Calling Equipment (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04104845A EP1643506B1 (de) | 2004-10-04 | 2004-10-04 | System und Verfahren zum Datensichern bei Stromausfall |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE347731T1 true ATE347731T1 (de) | 2006-12-15 |
Family
ID=34929652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04104845T ATE347731T1 (de) | 2004-10-04 | 2004-10-04 | System und verfahren zum datensichern bei stromausfall |
Country Status (5)
Country | Link |
---|---|
US (1) | US7634688B2 (de) |
EP (1) | EP1643506B1 (de) |
AT (1) | ATE347731T1 (de) |
CA (1) | CA2522122C (de) |
DE (1) | DE602004003583T2 (de) |
Families Citing this family (64)
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KR100833512B1 (ko) * | 2006-12-08 | 2008-05-29 | 한국전자통신연구원 | 태그의 센싱 데이터 저장 장치 및 그 방법 |
US20080159195A1 (en) * | 2006-12-29 | 2008-07-03 | Kappler Elizabeth M | Integration of wired and wireless network connections |
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US7908504B2 (en) * | 2007-03-23 | 2011-03-15 | Michael Feldman | Smart batteryless backup device and method therefor |
US8200885B2 (en) * | 2007-07-25 | 2012-06-12 | Agiga Tech Inc. | Hybrid memory system with backup power source and multiple backup an restore methodology |
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US20100073379A1 (en) * | 2008-09-24 | 2010-03-25 | Sadan Eray Berger | Method and system for rendering real-time sprites |
WO2010041852A2 (ko) * | 2008-10-06 | 2010-04-15 | Noh Sam Hyuk | 비휘발성 램을 이용한 영속적 컴퓨팅 방법 및 시스템 |
CN101446926B (zh) * | 2008-11-10 | 2011-06-01 | 成都市华为赛门铁克科技有限公司 | 一种高速缓冲存储器掉电数据保存方法、设备和系统 |
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US8566639B2 (en) * | 2009-02-11 | 2013-10-22 | Stec, Inc. | Flash backed DRAM module with state of health and/or status information accessible through a configuration data bus |
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US8307151B1 (en) | 2009-11-30 | 2012-11-06 | Micron Technology, Inc. | Multi-partitioning feature on e-MMC |
US8938574B2 (en) | 2010-10-26 | 2015-01-20 | Lsi Corporation | Methods and systems using solid-state drives as storage controller cache memory |
US8738843B2 (en) * | 2010-12-20 | 2014-05-27 | Lsi Corporation | Data manipulation during memory backup |
US8468317B2 (en) | 2011-06-07 | 2013-06-18 | Agiga Tech Inc. | Apparatus and method for improved data restore in a memory system |
US8543766B2 (en) * | 2011-06-10 | 2013-09-24 | Freescale Semiconductor, Inc. | Writing data to system memory in a data processing system in which cache line states are tracked |
JP2013061799A (ja) | 2011-09-13 | 2013-04-04 | Toshiba Corp | 記憶装置、記憶装置の制御方法およびコントローラ |
US9606929B2 (en) * | 2011-11-08 | 2017-03-28 | Lenovo Enterprise Solutions (Singapore) Pte. Ltd. | Simulated NVRAM |
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US9158700B2 (en) * | 2012-01-20 | 2015-10-13 | Seagate Technology Llc | Storing cached data in over-provisioned memory in response to power loss |
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US10102889B2 (en) | 2012-09-10 | 2018-10-16 | Texas Instruments Incorporated | Processing device with nonvolatile logic array backup |
US9141505B1 (en) * | 2012-09-27 | 2015-09-22 | Emc Corporation | Adaptive failure survivability in a storage system using save time and data transfer after power loss |
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US10437500B2 (en) | 2014-10-29 | 2019-10-08 | Hewlett Packard Enterprise Development Lp | Committing altered metadata to a non-volatile storage device |
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US10452594B2 (en) | 2015-10-20 | 2019-10-22 | Texas Instruments Incorporated | Nonvolatile logic memory for computing module reconfiguration |
US10331203B2 (en) | 2015-12-29 | 2019-06-25 | Texas Instruments Incorporated | Compute through power loss hardware approach for processing device having nonvolatile logic memory |
US9760147B2 (en) | 2016-01-22 | 2017-09-12 | Microsoft Technology Licensing, Llc | Power control for use of volatile memory as non-volatile memory |
US10115442B2 (en) | 2016-01-22 | 2018-10-30 | Microsoft Technology Licensing, Llc | Demand-based provisioning of volatile memory for use as non-volatile memory |
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US7260695B2 (en) * | 2004-03-05 | 2007-08-21 | International Business Machines Corporation | Scanning modified data during power loss |
-
2004
- 2004-10-04 AT AT04104845T patent/ATE347731T1/de not_active IP Right Cessation
- 2004-10-04 EP EP04104845A patent/EP1643506B1/de active Active
- 2004-10-04 DE DE602004003583T patent/DE602004003583T2/de active Active
- 2004-10-12 US US10/960,950 patent/US7634688B2/en not_active Expired - Fee Related
-
2005
- 2005-10-03 CA CA002522122A patent/CA2522122C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CA2522122A1 (en) | 2006-04-04 |
CA2522122C (en) | 2009-11-24 |
DE602004003583T2 (de) | 2007-11-22 |
US20060072369A1 (en) | 2006-04-06 |
EP1643506B1 (de) | 2006-12-06 |
DE602004003583D1 (de) | 2007-01-18 |
EP1643506A1 (de) | 2006-04-05 |
US7634688B2 (en) | 2009-12-15 |
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