ATE338344T1 - Zweipol-halbleiter-überstromschutz - Google Patents

Zweipol-halbleiter-überstromschutz

Info

Publication number
ATE338344T1
ATE338344T1 AT01114966T AT01114966T ATE338344T1 AT E338344 T1 ATE338344 T1 AT E338344T1 AT 01114966 T AT01114966 T AT 01114966T AT 01114966 T AT01114966 T AT 01114966T AT E338344 T1 ATE338344 T1 AT E338344T1
Authority
AT
Austria
Prior art keywords
mosfet
zener diode
overcurrent protection
vertical mosfet
pole semiconductor
Prior art date
Application number
AT01114966T
Other languages
English (en)
Inventor
Kunihito Ohshima
Masaya Shirota
Toshikazu Tezuka
Original Assignee
Shindengen Electric Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Mfg filed Critical Shindengen Electric Mfg
Application granted granted Critical
Publication of ATE338344T1 publication Critical patent/ATE338344T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
AT01114966T 2000-06-30 2001-06-20 Zweipol-halbleiter-überstromschutz ATE338344T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000198415A JP3660566B2 (ja) 2000-06-30 2000-06-30 過電流制限型半導体素子

Publications (1)

Publication Number Publication Date
ATE338344T1 true ATE338344T1 (de) 2006-09-15

Family

ID=18696581

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01114966T ATE338344T1 (de) 2000-06-30 2001-06-20 Zweipol-halbleiter-überstromschutz

Country Status (5)

Country Link
US (1) US6469352B2 (de)
EP (1) EP1168449B1 (de)
JP (1) JP3660566B2 (de)
AT (1) ATE338344T1 (de)
DE (1) DE60122626T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521958B1 (en) * 1999-08-26 2003-02-18 Micron Technology, Inc. MOSFET technology for programmable address decode and correction
US6674667B2 (en) * 2001-02-13 2004-01-06 Micron Technology, Inc. Programmable fuse and antifuse and method therefor
TW200509496A (en) * 2003-08-21 2005-03-01 Fultec Pty Ltd Proprietary Integrated electronic disconnecting circuits, methods, and systems
JP4437655B2 (ja) * 2003-10-02 2010-03-24 三菱電機株式会社 半導体装置及び半導体装置の駆動回路
DE102004052096B4 (de) * 2004-10-26 2016-05-19 Infineon Technologies Ag Halbleiterschaltelement mit Feldeffekttransistoren
JP4718517B2 (ja) * 2007-05-29 2011-07-06 Ｉｍｖ株式会社 基板検査装置
CN101452953B (zh) * 2007-11-28 2011-10-26 广州南科集成电子有限公司 一种恒流源器件及制造方法
JP4632068B2 (ja) * 2008-05-30 2011-02-16 三菱電機株式会社 半導体装置
US9379045B2 (en) 2012-09-13 2016-06-28 Fairchild Semiconductor Corporation Common drain power clip for battery pack protection mosfet
US9343568B2 (en) * 2014-05-12 2016-05-17 Macronix International Co., Ltd. Semiconductor device having high-resistance conductor structure, method of manufacturing the same and method of operating the same
CN104992934B (zh) * 2015-05-29 2018-01-09 株洲南车时代电气股份有限公司 功率半导体器件子模组
US9553087B1 (en) * 2015-11-02 2017-01-24 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device
DE102016207859B3 (de) * 2016-05-06 2017-10-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Monolithisch integrierter Halbleiterschalter, insbesondere Leistungstrennschalter
CN110993600B (zh) * 2019-12-16 2024-03-15 广东聚华印刷显示技术有限公司 Esd防护结构、esd防护结构制作方法及显示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533970A (en) * 1983-06-27 1985-08-06 Motorola, Inc. Series current limiter
JPS63181376A (ja) * 1987-01-23 1988-07-26 Toshiba Corp 半導体装置
JP3111576B2 (ja) * 1992-01-06 2000-11-27 富士電機株式会社 半導体装置
US5550701A (en) * 1994-08-30 1996-08-27 International Rectifier Corporation Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode
FR2742933B1 (fr) 1995-12-20 1998-03-13 Sgs Thomson Microelectronics Composant statique et monolithique limiteur de courant et disjoncteur
FR2751489B1 (fr) * 1996-07-16 1998-10-16 Sgs Thomson Microelectronics Microdisjoncteur statique autoblocable
FR2766984B1 (fr) 1997-08-01 1999-09-03 Commissariat Energie Atomique Dispositif de protection d'une charge electrique et circuit d'alimentation comportant un tel dispositif

Also Published As

Publication number Publication date
EP1168449B1 (de) 2006-08-30
US20020000568A1 (en) 2002-01-03
JP3660566B2 (ja) 2005-06-15
EP1168449A3 (de) 2004-08-04
EP1168449A2 (de) 2002-01-02
JP2002016485A (ja) 2002-01-18
US6469352B2 (en) 2002-10-22
DE60122626D1 (de) 2006-10-12
DE60122626T2 (de) 2007-08-30

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties