ATE338344T1 - Zweipol-halbleiter-überstromschutz - Google Patents

Zweipol-halbleiter-überstromschutz

Info

Publication number
ATE338344T1
ATE338344T1 AT01114966T AT01114966T ATE338344T1 AT E338344 T1 ATE338344 T1 AT E338344T1 AT 01114966 T AT01114966 T AT 01114966T AT 01114966 T AT01114966 T AT 01114966T AT E338344 T1 ATE338344 T1 AT E338344T1
Authority
AT
Austria
Prior art keywords
mosfet
zener diode
overcurrent protection
vertical mosfet
pole semiconductor
Prior art date
Application number
AT01114966T
Other languages
English (en)
Inventor
Kunihito Ohshima
Masaya Shirota
Toshikazu Tezuka
Original Assignee
Shindengen Electric Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Mfg filed Critical Shindengen Electric Mfg
Application granted granted Critical
Publication of ATE338344T1 publication Critical patent/ATE338344T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electronic Switches (AREA)
AT01114966T 2000-06-30 2001-06-20 Zweipol-halbleiter-überstromschutz ATE338344T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000198415A JP3660566B2 (ja) 2000-06-30 2000-06-30 過電流制限型半導体素子

Publications (1)

Publication Number Publication Date
ATE338344T1 true ATE338344T1 (de) 2006-09-15

Family

ID=18696581

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01114966T ATE338344T1 (de) 2000-06-30 2001-06-20 Zweipol-halbleiter-überstromschutz

Country Status (5)

Country Link
US (1) US6469352B2 (de)
EP (1) EP1168449B1 (de)
JP (1) JP3660566B2 (de)
AT (1) ATE338344T1 (de)
DE (1) DE60122626T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521958B1 (en) * 1999-08-26 2003-02-18 Micron Technology, Inc. MOSFET technology for programmable address decode and correction
US6674667B2 (en) * 2001-02-13 2004-01-06 Micron Technology, Inc. Programmable fuse and antifuse and method therefor
WO2005020402A1 (en) * 2003-08-21 2005-03-03 Fultec Pty Ltd Integrated electronic disconnecting circuits methods, and systems
JP4437655B2 (ja) * 2003-10-02 2010-03-24 三菱電機株式会社 半導体装置及び半導体装置の駆動回路
DE102004052096B4 (de) * 2004-10-26 2016-05-19 Infineon Technologies Ag Halbleiterschaltelement mit Feldeffekttransistoren
JP4718517B2 (ja) * 2007-05-29 2011-07-06 Ｉｍｖ株式会社 基板検査装置
CN101452953B (zh) * 2007-11-28 2011-10-26 广州南科集成电子有限公司 一种恒流源器件及制造方法
JP4632068B2 (ja) * 2008-05-30 2011-02-16 三菱電機株式会社 半導体装置
CN103681669B (zh) * 2012-09-13 2016-09-28 快捷半导体(苏州)有限公司 用于电池组保护mosfet的公共漏极电源夹件
US9343568B2 (en) * 2014-05-12 2016-05-17 Macronix International Co., Ltd. Semiconductor device having high-resistance conductor structure, method of manufacturing the same and method of operating the same
CN104992934B (zh) * 2015-05-29 2018-01-09 株洲南车时代电气股份有限公司 功率半导体器件子模组
US9553087B1 (en) * 2015-11-02 2017-01-24 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device
DE102015014588B4 (de) * 2015-11-12 2025-07-10 Tesat-Spacecom Gmbh & Co. Kg Vorrichtung zum Begrenzen der Spannung eines Verbrauchers
DE102016207859B3 (de) * 2016-05-06 2017-10-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Monolithisch integrierter Halbleiterschalter, insbesondere Leistungstrennschalter
JP7617529B2 (ja) * 2019-10-30 2025-01-20 パナソニックＩｐマネジメント株式会社 半導体装置
CN110993600B (zh) * 2019-12-16 2024-03-15 广东聚华印刷显示技术有限公司 Esd防护结构、esd防护结构制作方法及显示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533970A (en) * 1983-06-27 1985-08-06 Motorola, Inc. Series current limiter
JPS63181376A (ja) * 1987-01-23 1988-07-26 Toshiba Corp 半導体装置
JP3111576B2 (ja) * 1992-01-06 2000-11-27 富士電機株式会社 半導体装置
US5550701A (en) * 1994-08-30 1996-08-27 International Rectifier Corporation Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode
FR2742933B1 (fr) 1995-12-20 1998-03-13 Sgs Thomson Microelectronics Composant statique et monolithique limiteur de courant et disjoncteur
FR2751489B1 (fr) * 1996-07-16 1998-10-16 Sgs Thomson Microelectronics Microdisjoncteur statique autoblocable
FR2766984B1 (fr) 1997-08-01 1999-09-03 Commissariat Energie Atomique Dispositif de protection d'une charge electrique et circuit d'alimentation comportant un tel dispositif

Also Published As

Publication number Publication date
JP3660566B2 (ja) 2005-06-15
DE60122626T2 (de) 2007-08-30
EP1168449A2 (de) 2002-01-02
JP2002016485A (ja) 2002-01-18
US20020000568A1 (en) 2002-01-03
EP1168449A3 (de) 2004-08-04
EP1168449B1 (de) 2006-08-30
DE60122626D1 (de) 2006-10-12
US6469352B2 (en) 2002-10-22

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Legal Events

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