ATE333668T1 - Strahlungsquelle hoher luminosität für die euv- lithographie - Google Patents
Strahlungsquelle hoher luminosität für die euv- lithographieInfo
- Publication number
- ATE333668T1 ATE333668T1 AT02258588T AT02258588T ATE333668T1 AT E333668 T1 ATE333668 T1 AT E333668T1 AT 02258588 T AT02258588 T AT 02258588T AT 02258588 T AT02258588 T AT 02258588T AT E333668 T1 ATE333668 T1 AT E333668T1
- Authority
- AT
- Austria
- Prior art keywords
- point
- light sources
- mirror
- euv
- light
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001380646A JP2003185798A (ja) | 2001-12-13 | 2001-12-13 | 軟x線光源装置およびeuv露光装置ならびに照明方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE333668T1 true ATE333668T1 (de) | 2006-08-15 |
Family
ID=19187212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02258588T ATE333668T1 (de) | 2001-12-13 | 2002-12-12 | Strahlungsquelle hoher luminosität für die euv- lithographie |
Country Status (7)
Country | Link |
---|---|
US (1) | US6861656B2 (de) |
EP (1) | EP1319988B1 (de) |
JP (1) | JP2003185798A (de) |
KR (1) | KR100895227B1 (de) |
AT (1) | ATE333668T1 (de) |
DE (1) | DE60213187T2 (de) |
TW (1) | TWI287236B (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7492867B1 (en) * | 1999-10-11 | 2009-02-17 | University Of Central Flordia Research Foundation, Inc. | Nanoparticle seeded short-wavelength discharge lamps |
JP5098126B2 (ja) * | 2001-08-07 | 2012-12-12 | 株式会社ニコン | X線発生装置、露光装置、露光方法及びデバイス製造方法 |
US7002164B2 (en) * | 2003-01-08 | 2006-02-21 | Intel Corporation | Source multiplexing in lithography |
DE10305701B4 (de) * | 2003-02-07 | 2005-10-06 | Xtreme Technologies Gmbh | Anordnung zur Erzeugung von EUV-Strahlung mit hohen Repetitionsraten |
JP2004343082A (ja) * | 2003-04-17 | 2004-12-02 | Asml Netherlands Bv | 凹面および凸面を含む集光器を備えたリトグラフ投影装置 |
JP5026788B2 (ja) * | 2003-07-30 | 2012-09-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィの照明システム |
US7781750B2 (en) | 2003-08-27 | 2010-08-24 | Carl Zeiss Smt Ag | Oblique mirror-type normal-incidence collector system for light sources, particularly EUV plasma discharge sources |
US7030963B2 (en) * | 2004-05-03 | 2006-04-18 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7105837B2 (en) * | 2004-05-13 | 2006-09-12 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and radiation system |
US7079225B2 (en) * | 2004-09-14 | 2006-07-18 | Asml Netherlands B.V | Lithographic apparatus and device manufacturing method |
JP2006156857A (ja) * | 2004-12-01 | 2006-06-15 | Canon Inc | X線発生装置及び露光装置 |
US20070064008A1 (en) * | 2005-09-14 | 2007-03-22 | Childers Winthrop D | Image display system and method |
US20070063996A1 (en) * | 2005-09-14 | 2007-03-22 | Childers Winthrop D | Image display system and method |
US7551154B2 (en) * | 2005-09-15 | 2009-06-23 | Hewlett-Packard Development Company, L.P. | Image display system and method |
DE102006003683B3 (de) * | 2006-01-24 | 2007-09-13 | Xtreme Technologies Gmbh | Anordnung und Verfahren zur Erzeugung von EUV-Strahlung hoher Durchschnittsleistung |
WO2008101664A1 (en) * | 2007-02-20 | 2008-08-28 | Carl Zeiss Smt Ag | Optical element with multiple primary light sources |
KR20100119481A (ko) * | 2008-02-19 | 2010-11-09 | 나노 유브이 | 펄스형 소스의 다중화 |
DE102008042462B4 (de) | 2008-09-30 | 2010-11-04 | Carl Zeiss Smt Ag | Beleuchtungssystem für die EUV-Mikrolithographie |
EP2204695B1 (de) | 2008-12-31 | 2019-01-02 | ASML Holding N.V. | Lichtleitwertregelvorrichtung für einen gepulsten Strahl |
KR20110019524A (ko) | 2009-08-20 | 2011-02-28 | 삼성전자주식회사 | 극자외선용 투과형 렌즈 및 이를 포함하는 광학 시스템 |
DE102011004615A1 (de) * | 2010-03-17 | 2011-09-22 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithografie |
US9625810B2 (en) | 2011-03-16 | 2017-04-18 | Kla-Tencor Corporation | Source multiplexing illumination for mask inspection |
US9151718B2 (en) | 2012-03-19 | 2015-10-06 | Kla-Tencor Corporation | Illumination system with time multiplexed sources for reticle inspection |
DE102012218105A1 (de) * | 2012-10-04 | 2013-08-14 | Carl Zeiss Smt Gmbh | Vorrichtung zur Einkopplung von Beleuchtungsstrahlung in eine Beleuchtungsoptik |
WO2016117118A1 (ja) * | 2015-01-23 | 2016-07-28 | 国立大学法人九州大学 | Euv光生成システム及びeuv光生成方法、並びにトムソン散乱計測システム |
CN111354500B (zh) * | 2020-03-16 | 2022-03-22 | 中国科学院高能物理研究所 | 一种同步辐射x射线双反射镜 |
CN116909107B (zh) * | 2023-07-25 | 2024-03-01 | 上海图双精密装备有限公司 | 一种光刻设备照明用光源系统 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5002348A (en) | 1989-05-24 | 1991-03-26 | E. I. Du Pont De Nemours And Company | Scanning beam optical signal processor |
DE59105477D1 (de) * | 1991-10-30 | 1995-06-14 | Fraunhofer Ges Forschung | Belichtungsvorrichtung. |
US5309198A (en) * | 1992-02-25 | 1994-05-03 | Nikon Corporation | Light exposure system |
US5765934A (en) * | 1995-08-04 | 1998-06-16 | Mitsubishi Denki Kabushiki Kaisha | Projection type display |
JP4238390B2 (ja) * | 1998-02-27 | 2009-03-18 | 株式会社ニコン | 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法 |
US6438199B1 (en) * | 1998-05-05 | 2002-08-20 | Carl-Zeiss-Stiftung | Illumination system particularly for microlithography |
DE19935404A1 (de) * | 1999-07-30 | 2001-02-01 | Zeiss Carl Fa | Beleuchtungssystem mit mehreren Lichtquellen |
JP4332648B2 (ja) * | 1999-04-07 | 2009-09-16 | レーザーテック株式会社 | 光源装置 |
JP2001006840A (ja) | 1999-06-25 | 2001-01-12 | Tokin Corp | サージ吸収素子及びその製造方法 |
DE19935568A1 (de) * | 1999-07-30 | 2001-02-15 | Zeiss Carl Fa | Steuerung der Beleuchtungsverteilung in der Austrittspupille eines EUV-Beleuchtungssystems |
KR100517003B1 (ko) * | 1999-08-13 | 2005-09-27 | 세이코 엡슨 가부시키가이샤 | 편광 조명 장치 및 투사형 표시 장치 |
-
2001
- 2001-12-13 JP JP2001380646A patent/JP2003185798A/ja active Pending
-
2002
- 2002-10-22 KR KR1020020064424A patent/KR100895227B1/ko not_active IP Right Cessation
- 2002-12-12 EP EP02258588A patent/EP1319988B1/de not_active Expired - Lifetime
- 2002-12-12 AT AT02258588T patent/ATE333668T1/de not_active IP Right Cessation
- 2002-12-12 US US10/319,337 patent/US6861656B2/en not_active Expired - Fee Related
- 2002-12-12 DE DE60213187T patent/DE60213187T2/de not_active Expired - Lifetime
- 2002-12-13 TW TW091136046A patent/TWI287236B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP1319988A2 (de) | 2003-06-18 |
DE60213187T2 (de) | 2007-07-12 |
KR100895227B1 (ko) | 2009-05-04 |
JP2003185798A (ja) | 2003-07-03 |
DE60213187D1 (de) | 2006-08-31 |
US20030223544A1 (en) | 2003-12-04 |
TW200302492A (en) | 2003-08-01 |
EP1319988B1 (de) | 2006-07-19 |
US6861656B2 (en) | 2005-03-01 |
EP1319988A3 (de) | 2004-10-13 |
TWI287236B (en) | 2007-09-21 |
KR20030051206A (ko) | 2003-06-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |