ATE314730T1 - Ram speicher und das in deren herstellung verwendete platindampfabscheidungsverfahren - Google Patents

Ram speicher und das in deren herstellung verwendete platindampfabscheidungsverfahren

Info

Publication number
ATE314730T1
ATE314730T1 AT97936141T AT97936141T ATE314730T1 AT E314730 T1 ATE314730 T1 AT E314730T1 AT 97936141 T AT97936141 T AT 97936141T AT 97936141 T AT97936141 T AT 97936141T AT E314730 T1 ATE314730 T1 AT E314730T1
Authority
AT
Austria
Prior art keywords
butyl
propyl
methyl
vapor deposition
group
Prior art date
Application number
AT97936141T
Other languages
English (en)
Inventor
Thomas H Baum
Peter S Kirlin
Sofia Pombrik
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Application granted granted Critical
Publication of ATE314730T1 publication Critical patent/ATE314730T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C49/00—Ketones; Ketenes; Dimeric ketenes; Ketonic chelates
    • C07C49/92—Ketonic chelates
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C07F17/02—Metallocenes of metals of Groups 8, 9 or 10 of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
AT97936141T 1996-06-28 1997-06-27 Ram speicher und das in deren herstellung verwendete platindampfabscheidungsverfahren ATE314730T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/673,372 US5783716A (en) 1996-06-28 1996-06-28 Platinum source compositions for chemical vapor deposition of platinum
PCT/US1997/012762 WO1998000432A1 (en) 1996-06-28 1997-06-27 Platinum source compositions for chemical vapor deposition of platinum

Publications (1)

Publication Number Publication Date
ATE314730T1 true ATE314730T1 (de) 2006-01-15

Family

ID=24702388

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97936141T ATE314730T1 (de) 1996-06-28 1997-06-27 Ram speicher und das in deren herstellung verwendete platindampfabscheidungsverfahren

Country Status (6)

Country Link
US (2) US5783716A (de)
EP (1) EP0920435B1 (de)
JP (1) JP2001504159A (de)
AT (1) ATE314730T1 (de)
DE (1) DE69734985D1 (de)
WO (1) WO1998000432A1 (de)

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US7750173B2 (en) 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
US8367506B2 (en) 2007-06-04 2013-02-05 Micron Technology, Inc. High-k dielectrics with gold nano-particles
US20090275164A1 (en) * 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
US9121043B2 (en) 2010-06-15 2015-09-01 Metabolic Explorer Method for producing glycolic acid using an inducible promoter
EP2700646B1 (de) 2011-04-20 2015-10-14 Tanaka Kikinzoku Kogyo K.K. Verfahren zur chemischen dampfabscheidung mit hilfe einer organischen platinverbindung
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JP5960321B1 (ja) 2015-05-12 2016-08-02 田中貴金属工業株式会社 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法
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JP6407370B1 (ja) * 2017-07-25 2018-10-17 田中貴金属工業株式会社 有機白金化合物からなる気相蒸着用原料及び該気相蒸着用原料を用いた気相蒸着法
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Also Published As

Publication number Publication date
US5783716A (en) 1998-07-21
EP0920435B1 (de) 2005-12-28
EP0920435A1 (de) 1999-06-09
US6162712A (en) 2000-12-19
JP2001504159A (ja) 2001-03-27
DE69734985D1 (de) 2006-02-02
EP0920435A4 (de) 2001-07-25
WO1998000432A1 (en) 1998-01-08

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