JP6407370B1 - 有機白金化合物からなる気相蒸着用原料及び該気相蒸着用原料を用いた気相蒸着法 - Google Patents
有機白金化合物からなる気相蒸着用原料及び該気相蒸着用原料を用いた気相蒸着法 Download PDFInfo
- Publication number
- JP6407370B1 JP6407370B1 JP2017143327A JP2017143327A JP6407370B1 JP 6407370 B1 JP6407370 B1 JP 6407370B1 JP 2017143327 A JP2017143327 A JP 2017143327A JP 2017143327 A JP2017143327 A JP 2017143327A JP 6407370 B1 JP6407370 B1 JP 6407370B1
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- group
- platinum
- raw material
- platinum compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 150000003058 platinum compounds Chemical class 0.000 title claims abstract description 76
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 title claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 81
- 239000003446 ligand Substances 0.000 claims abstract description 48
- 239000002994 raw material Substances 0.000 claims abstract description 39
- 239000010409 thin film Substances 0.000 claims abstract description 39
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 38
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 31
- OQGVPWWLCUMRCI-UHFFFAOYSA-N cyclopenten-1-amine Chemical compound NC1=CCCC1 OQGVPWWLCUMRCI-UHFFFAOYSA-N 0.000 claims abstract description 13
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 6
- 125000000304 alkynyl group Chemical group 0.000 claims abstract description 6
- 125000003277 amino group Chemical group 0.000 claims abstract description 6
- 125000004093 cyano group Chemical group *C#N 0.000 claims abstract description 6
- 125000001841 imino group Chemical group [H]N=* 0.000 claims abstract description 6
- 125000002462 isocyano group Chemical group *[N+]#[C-] 0.000 claims abstract description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims 2
- 239000010408 film Substances 0.000 abstract description 48
- 230000015572 biosynthetic process Effects 0.000 abstract description 34
- 238000009834 vaporization Methods 0.000 abstract description 17
- 230000008016 vaporization Effects 0.000 abstract description 17
- -1 alkyl compound Chemical class 0.000 abstract description 10
- 238000005755 formation reaction Methods 0.000 description 33
- 150000001875 compounds Chemical class 0.000 description 25
- 238000000354 decomposition reaction Methods 0.000 description 25
- 238000010438 heat treatment Methods 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 12
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 12
- 239000007787 solid Substances 0.000 description 10
- 229940045985 antineoplastic platinum compound Drugs 0.000 description 9
- 239000000203 mixture Substances 0.000 description 7
- LKSCPYCYSCCLCS-UHFFFAOYSA-N C[Pt]C.C=CCCC=C Chemical compound C[Pt]C.C=CCCC=C LKSCPYCYSCCLCS-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- LPIQUOYDBNQMRZ-UHFFFAOYSA-N cyclopentene Chemical compound C1CC=CC1 LPIQUOYDBNQMRZ-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 4
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- YGBYJRVGNBVTCQ-UHFFFAOYSA-N C[Pt](C)C.[CH]1C=CC=C1 Chemical compound C[Pt](C)C.[CH]1C=CC=C1 YGBYJRVGNBVTCQ-UHFFFAOYSA-N 0.000 description 2
- QKRXNRISFFXIEF-UHFFFAOYSA-N [Pt].CC(CC=C)(N(C)C)C Chemical compound [Pt].CC(CC=C)(N(C)C)C QKRXNRISFFXIEF-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 150000003057 platinum Chemical class 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- NXICUOOCQAMYAN-UHFFFAOYSA-N C[Pt]C.C=CCC=CC Chemical compound C[Pt]C.C=CCC=CC NXICUOOCQAMYAN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- LJSBEPFUQWPNBZ-UHFFFAOYSA-N cyclopent-3-en-1-amine Chemical compound NC1CC=CC1 LJSBEPFUQWPNBZ-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- GKTJBVBQYZOQNJ-UHFFFAOYSA-N n,n-dimethylbut-3-en-1-amine Chemical compound CN(C)CCC=C GKTJBVBQYZOQNJ-UHFFFAOYSA-N 0.000 description 1
- CPYHXNPNCDIHGC-UHFFFAOYSA-N n,n-dimethylcyclopent-3-en-1-amine Chemical compound CN(C)C1CC=CC1 CPYHXNPNCDIHGC-UHFFFAOYSA-N 0.000 description 1
- VFSJDHDSAIQLMF-UHFFFAOYSA-N n-methylcyclopent-3-en-1-amine Chemical compound CNC1CC=CC1 VFSJDHDSAIQLMF-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C211/00—Compounds containing amino groups bound to a carbon skeleton
- C07C211/33—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of rings other than six-membered aromatic rings
- C07C211/39—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of rings other than six-membered aromatic rings of an unsaturated carbon skeleton
- C07C211/40—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of rings other than six-membered aromatic rings of an unsaturated carbon skeleton containing only non-condensed rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
- C07F15/0086—Platinum compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
上記のTG−DTAは、化合物固有の物性(分解温度)を静的に且つ正確に測定する点で優れた分析法である。もっとも、実際の薄膜製造の際の原料加熱操作においては、分解温度未満の加熱であっても長時間加熱により有機化合物に局所的な分解が生じることがある。また、そのような局所的な分解が起点となり、連鎖的な分解が生じることがある。そこで、薄膜製造における原料加熱操作を想定した動的な熱安定性評価を行うこととした。この評価試験は、実施例1と比較例の有機白金化合物を一定時間加熱して化合物分解の有無を判定した。具体的方法としては、実施例1と比較例の有機白金化合物をそれぞれ0.2g採取して試験管に入れ、大気中、100℃で1時間加熱した。そして、この1時間の加熱後、白金化合物の外観変化の有無を確認した。
基板寸法:15mm×15mm
成膜温度175℃
試料温度:100℃
成膜圧力:5torr
反応ガス(水素)流量:100sccm
成膜時間:120min
Claims (5)
- R1、R2は、それぞれ、水素、メチル基又はエチル基のいずれかである請求項1に記載の気相蒸着用原料。
- R3は、水素である請求項1又は請求項2に記載の気相蒸着用原料。
- R4及びR5は、いずれもメチル基である請求項1〜請求項3のいずれかに記載の気相蒸着用原料。
- 有機白金化合物からなる原料を気化して原料ガスとし、前記原料ガスを基板表面に導入しつつ加熱する白金薄膜又は白金化合物薄膜の気相蒸着法において、
前記原料として請求項1〜請求項4のいずれかに記載された気相蒸着用原料を用いる気相蒸着法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017143327A JP6407370B1 (ja) | 2017-07-25 | 2017-07-25 | 有機白金化合物からなる気相蒸着用原料及び該気相蒸着用原料を用いた気相蒸着法 |
TW107121996A TWI676630B (zh) | 2017-07-25 | 2018-06-27 | 由有機鉑化合物所構成之氣相蒸鍍用原料及使用該氣相蒸鍍用原料之氣相蒸鍍法 |
PCT/JP2018/026261 WO2019021836A1 (ja) | 2017-07-25 | 2018-07-12 | 有機白金化合物からなる気相蒸着用原料及び該気相蒸着用原料を用いた気相蒸着法 |
KR1020197038515A KR102351888B1 (ko) | 2017-07-25 | 2018-07-12 | 유기 백금 화합물을 포함하는 기상 증착용 원료 및 해당 기상 증착용 원료를 사용한 기상 증착법 |
US16/628,195 US11149045B2 (en) | 2017-07-25 | 2018-07-12 | Raw material for vapor deposition including organoplatinum compound and vapor deposition method using the raw material for vapor deposition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017143327A JP6407370B1 (ja) | 2017-07-25 | 2017-07-25 | 有機白金化合物からなる気相蒸着用原料及び該気相蒸着用原料を用いた気相蒸着法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6407370B1 true JP6407370B1 (ja) | 2018-10-17 |
JP2019023336A JP2019023336A (ja) | 2019-02-14 |
Family
ID=63855265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017143327A Active JP6407370B1 (ja) | 2017-07-25 | 2017-07-25 | 有機白金化合物からなる気相蒸着用原料及び該気相蒸着用原料を用いた気相蒸着法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11149045B2 (ja) |
JP (1) | JP6407370B1 (ja) |
KR (1) | KR102351888B1 (ja) |
TW (1) | TWI676630B (ja) |
WO (1) | WO2019021836A1 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11292889A (ja) * | 1998-04-03 | 1999-10-26 | Kojundo Chem Lab Co Ltd | トリメチル(エチルシクロペンタジエニル)白金とそ の製造方法及びそれを用いた白金含有薄膜の製造方法 |
JP2001504159A (ja) * | 1996-06-28 | 2001-03-27 | アドバンスド テクノロジー マテリアルズ,インク. | 白金の化学蒸着のための白金ソース組成物 |
WO2010052672A2 (en) * | 2008-11-07 | 2010-05-14 | L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Allyl-containing precursors for the deposition of metal-containing films |
WO2012144455A1 (ja) * | 2011-04-20 | 2012-10-26 | 田中貴金属工業株式会社 | 化学蒸着用の有機白金化合物及び該有機白金化合物を用いた化学蒸着方法 |
WO2013054863A1 (ja) * | 2011-10-14 | 2013-04-18 | 田中貴金属工業株式会社 | 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
JP2016211048A (ja) * | 2015-05-12 | 2016-12-15 | 田中貴金属工業株式会社 | 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100256405A1 (en) * | 2008-11-07 | 2010-10-07 | Christian Dussarrat | Synthesis of allyl-containing precursors for the deposition of metal-containing films |
-
2017
- 2017-07-25 JP JP2017143327A patent/JP6407370B1/ja active Active
-
2018
- 2018-06-27 TW TW107121996A patent/TWI676630B/zh active
- 2018-07-12 KR KR1020197038515A patent/KR102351888B1/ko active IP Right Grant
- 2018-07-12 WO PCT/JP2018/026261 patent/WO2019021836A1/ja active Application Filing
- 2018-07-12 US US16/628,195 patent/US11149045B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001504159A (ja) * | 1996-06-28 | 2001-03-27 | アドバンスド テクノロジー マテリアルズ,インク. | 白金の化学蒸着のための白金ソース組成物 |
JPH11292889A (ja) * | 1998-04-03 | 1999-10-26 | Kojundo Chem Lab Co Ltd | トリメチル(エチルシクロペンタジエニル)白金とそ の製造方法及びそれを用いた白金含有薄膜の製造方法 |
WO2010052672A2 (en) * | 2008-11-07 | 2010-05-14 | L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Allyl-containing precursors for the deposition of metal-containing films |
WO2012144455A1 (ja) * | 2011-04-20 | 2012-10-26 | 田中貴金属工業株式会社 | 化学蒸着用の有機白金化合物及び該有機白金化合物を用いた化学蒸着方法 |
WO2013054863A1 (ja) * | 2011-10-14 | 2013-04-18 | 田中貴金属工業株式会社 | 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
JP2016211048A (ja) * | 2015-05-12 | 2016-12-15 | 田中貴金属工業株式会社 | 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
Also Published As
Publication number | Publication date |
---|---|
US20200148713A1 (en) | 2020-05-14 |
KR102351888B1 (ko) | 2022-01-18 |
JP2019023336A (ja) | 2019-02-14 |
TWI676630B (zh) | 2019-11-11 |
KR20200013712A (ko) | 2020-02-07 |
WO2019021836A1 (ja) | 2019-01-31 |
TW201920223A (zh) | 2019-06-01 |
US11149045B2 (en) | 2021-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6043851B1 (ja) | 有機ルテニウム化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 | |
JP7148377B2 (ja) | ルテニウム錯体からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 | |
CN106103456A (zh) | 有机锗胺化合物及用其沉积薄膜的方法 | |
WO2017033913A1 (ja) | 複核ルテニウム錯体からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 | |
TWI439563B (zh) | 化學蒸鍍用之有機鉑化合物及使用該有機鉑化合物之化學蒸鍍方法 | |
KR102040387B1 (ko) | 유기 백금 화합물을 포함하는 화학 증착용 원료를 사용한 화학 증착법 | |
JP6407370B1 (ja) | 有機白金化合物からなる気相蒸着用原料及び該気相蒸着用原料を用いた気相蒸着法 | |
WO2016052288A1 (ja) | 有機ルテニウム化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 | |
JP5952460B1 (ja) | 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 | |
WO2019078195A1 (ja) | シクロペンタジエニルニッケル錯体化合物 | |
TW202206437A (zh) | 有機金屬化合物、含有機金屬化合物之前驅組合物及用其製造薄膜的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180712 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180831 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180918 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6407370 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |