ATE289705T1 - Grossflächige siliziumcarbidelemente und zugehöriges herstellungsverfahren - Google Patents

Grossflächige siliziumcarbidelemente und zugehöriges herstellungsverfahren

Info

Publication number
ATE289705T1
ATE289705T1 AT02802769T AT02802769T ATE289705T1 AT E289705 T1 ATE289705 T1 AT E289705T1 AT 02802769 T AT02802769 T AT 02802769T AT 02802769 T AT02802769 T AT 02802769T AT E289705 T1 ATE289705 T1 AT E289705T1
Authority
AT
Austria
Prior art keywords
silicon carbide
devices
production process
large area
associated production
Prior art date
Application number
AT02802769T
Other languages
German (de)
English (en)
Inventor
Sei-Hyung Ryu
Anant Agarwal
Craig Capell
John W Palmour
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25528429&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE289705(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE289705T1 publication Critical patent/ATE289705T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT02802769T 2001-10-17 2002-09-19 Grossflächige siliziumcarbidelemente und zugehöriges herstellungsverfahren ATE289705T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/981,523 US6514779B1 (en) 2001-10-17 2001-10-17 Large area silicon carbide devices and manufacturing methods therefor
PCT/US2002/029785 WO2003041157A2 (en) 2001-10-17 2002-09-19 Large area silicon carbide devices and manufacturing methods therefor

Publications (1)

Publication Number Publication Date
ATE289705T1 true ATE289705T1 (de) 2005-03-15

Family

ID=25528429

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02802769T ATE289705T1 (de) 2001-10-17 2002-09-19 Grossflächige siliziumcarbidelemente und zugehöriges herstellungsverfahren

Country Status (10)

Country Link
US (1) US6514779B1 (zh)
EP (1) EP1444729B2 (zh)
JP (1) JP2005509290A (zh)
KR (1) KR20040052234A (zh)
CN (1) CN1331205C (zh)
AT (1) ATE289705T1 (zh)
CA (1) CA2464405A1 (zh)
DE (1) DE60203054T3 (zh)
ES (1) ES2235116T5 (zh)
WO (1) WO2003041157A2 (zh)

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WO2005049957A2 (en) * 2003-11-18 2005-06-02 Halliburton Energy Services, Inc. High temperature environment tool system and method
JP4400441B2 (ja) * 2004-12-14 2010-01-20 三菱電機株式会社 半導体装置
US7378288B2 (en) * 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
DE102005006639B4 (de) * 2005-02-14 2007-08-16 Siemens Ag Erzeugen von SiC-Packs auf Wafer-Ebene
DE102005045613A1 (de) * 2005-09-23 2007-03-29 Siemens Ag SiC-Halbleiterbauelement und Herstellungsverfahren
US8089150B2 (en) * 2006-11-14 2012-01-03 Rinehart Lawrence E Structurally robust power switching assembly
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
WO2015061881A1 (en) * 2013-10-29 2015-05-07 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
JP5725501B2 (ja) * 2011-02-22 2015-05-27 レーザーテック株式会社 検査装置
SE535380C2 (sv) * 2011-01-31 2012-07-17 Fairchild Semiconductor Bipolär transistor i kiselkarbid med övervuxen emitter
US8871600B2 (en) 2011-11-11 2014-10-28 International Business Machines Corporation Schottky barrier diodes with a guard ring formed by selective epitaxy
EP2761660B1 (en) * 2012-01-18 2017-09-27 Fairchild Semiconductor Corporation Bipolar junction transistor with spacer layer and method of manufacturing the same
US9941176B2 (en) * 2012-05-21 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Selective solder bump formation on wafer
WO2014060980A1 (en) * 2012-10-18 2014-04-24 Visic Technologies Ltd. Semiconductor device fabrication method
US8937351B2 (en) * 2013-03-04 2015-01-20 Microchip Technology Incorporated Power MOS transistor with improved metal contact
CN105144387B (zh) * 2013-03-15 2018-03-13 苹果公司 具有冗余方案的发光二极管显示器和利用集成的缺陷检测测试来制造发光二极管显示器的方法
US9252375B2 (en) 2013-03-15 2016-02-02 LuxVue Technology Corporation Method of fabricating a light emitting diode display with integrated defect detection test
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
CN103579016B (zh) * 2013-11-04 2017-06-23 株洲南车时代电气股份有限公司 一种大电流碳化硅sbd/jbs功率芯片结构及其制造方法
JP6745737B2 (ja) * 2017-02-17 2020-08-26 三菱電機株式会社 ショットキーバリアダイオードの製造方法

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Also Published As

Publication number Publication date
US6514779B1 (en) 2003-02-04
WO2003041157A3 (en) 2004-02-12
EP1444729B1 (en) 2005-02-23
EP1444729B2 (en) 2013-03-06
CN1331205C (zh) 2007-08-08
KR20040052234A (ko) 2004-06-22
CN1605124A (zh) 2005-04-06
DE60203054T2 (de) 2006-04-13
EP1444729A2 (en) 2004-08-11
WO2003041157A2 (en) 2003-05-15
DE60203054D1 (de) 2005-03-31
CA2464405A1 (en) 2003-05-15
JP2005509290A (ja) 2005-04-07
ES2235116T5 (es) 2013-05-27
ES2235116T3 (es) 2005-07-01
DE60203054T3 (de) 2013-08-01

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