ATE289705T1 - Grossflächige siliziumcarbidelemente und zugehöriges herstellungsverfahren - Google Patents

Grossflächige siliziumcarbidelemente und zugehöriges herstellungsverfahren

Info

Publication number
ATE289705T1
ATE289705T1 AT02802769T AT02802769T ATE289705T1 AT E289705 T1 ATE289705 T1 AT E289705T1 AT 02802769 T AT02802769 T AT 02802769T AT 02802769 T AT02802769 T AT 02802769T AT E289705 T1 ATE289705 T1 AT E289705T1
Authority
AT
Austria
Prior art keywords
silicon carbide
devices
production process
large area
associated production
Prior art date
Application number
AT02802769T
Other languages
English (en)
Inventor
Sei-Hyung Ryu
Anant Agarwal
Craig Capell
John W Palmour
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25528429&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE289705(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE289705T1 publication Critical patent/ATE289705T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT02802769T 2001-10-17 2002-09-19 Grossflächige siliziumcarbidelemente und zugehöriges herstellungsverfahren ATE289705T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/981,523 US6514779B1 (en) 2001-10-17 2001-10-17 Large area silicon carbide devices and manufacturing methods therefor
PCT/US2002/029785 WO2003041157A2 (en) 2001-10-17 2002-09-19 Large area silicon carbide devices and manufacturing methods therefor

Publications (1)

Publication Number Publication Date
ATE289705T1 true ATE289705T1 (de) 2005-03-15

Family

ID=25528429

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02802769T ATE289705T1 (de) 2001-10-17 2002-09-19 Grossflächige siliziumcarbidelemente und zugehöriges herstellungsverfahren

Country Status (10)

Country Link
US (1) US6514779B1 (de)
EP (1) EP1444729B2 (de)
JP (1) JP2005509290A (de)
KR (1) KR20040052234A (de)
CN (1) CN1331205C (de)
AT (1) ATE289705T1 (de)
CA (1) CA2464405A1 (de)
DE (1) DE60203054T3 (de)
ES (1) ES2235116T5 (de)
WO (1) WO2003041157A2 (de)

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US7230273B2 (en) * 2002-06-13 2007-06-12 Matsushita Electric Industrial Co., Ltd. Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductor
EP1687837A4 (de) * 2003-11-18 2012-01-18 Halliburton Energy Serv Inc Elektronische hochtemperatur-einrichtungen
JP4400441B2 (ja) * 2004-12-14 2010-01-20 三菱電機株式会社 半導体装置
US7378288B2 (en) * 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
DE102005006639B4 (de) * 2005-02-14 2007-08-16 Siemens Ag Erzeugen von SiC-Packs auf Wafer-Ebene
DE102005045613A1 (de) * 2005-09-23 2007-03-29 Siemens Ag SiC-Halbleiterbauelement und Herstellungsverfahren
US8089150B2 (en) * 2006-11-14 2012-01-03 Rinehart Lawrence E Structurally robust power switching assembly
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
JP5725501B2 (ja) * 2011-02-22 2015-05-27 レーザーテック株式会社 検査装置
SE1150065A1 (sv) * 2011-01-31 2012-07-17 Fairchild Semiconductor Bipolär transistor i kiselkarbid med övervuxen emitter
US8871600B2 (en) 2011-11-11 2014-10-28 International Business Machines Corporation Schottky barrier diodes with a guard ring formed by selective epitaxy
WO2013107508A1 (en) * 2012-01-18 2013-07-25 Fairchild Semiconductor Corporation Bipolar junction transistor with spacer layer and method of manufacturing the same
US9941176B2 (en) * 2012-05-21 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Selective solder bump formation on wafer
WO2014060980A1 (en) * 2012-10-18 2014-04-24 Visic Technologies Ltd. Semiconductor device fabrication method
US8937351B2 (en) * 2013-03-04 2015-01-20 Microchip Technology Incorporated Power MOS transistor with improved metal contact
US9252375B2 (en) 2013-03-15 2016-02-02 LuxVue Technology Corporation Method of fabricating a light emitting diode display with integrated defect detection test
KR101820275B1 (ko) * 2013-03-15 2018-01-19 애플 인크. 리던던시 스킴을 갖춘 발광 다이오드 디스플레이 및 통합 결함 검출 테스트를 갖는 발광 다이오드 디스플레이를 제작하는 방법
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
KR101837877B1 (ko) * 2013-10-29 2018-03-12 갠 시스템즈 인크. 대면적 질화물 반도체 디바이스들을 위한 장애 허용 설계
CN103579016B (zh) * 2013-11-04 2017-06-23 株洲南车时代电气股份有限公司 一种大电流碳化硅sbd/jbs功率芯片结构及其制造方法
JP6745737B2 (ja) * 2017-02-17 2020-08-26 三菱電機株式会社 ショットキーバリアダイオードの製造方法

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Also Published As

Publication number Publication date
EP1444729B2 (de) 2013-03-06
WO2003041157A3 (en) 2004-02-12
EP1444729B1 (de) 2005-02-23
DE60203054T2 (de) 2006-04-13
CN1605124A (zh) 2005-04-06
US6514779B1 (en) 2003-02-04
WO2003041157A2 (en) 2003-05-15
CA2464405A1 (en) 2003-05-15
ES2235116T5 (es) 2013-05-27
CN1331205C (zh) 2007-08-08
JP2005509290A (ja) 2005-04-07
ES2235116T3 (es) 2005-07-01
DE60203054T3 (de) 2013-08-01
KR20040052234A (ko) 2004-06-22
DE60203054D1 (de) 2005-03-31
EP1444729A2 (de) 2004-08-11

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