ATE239970T1 - Skalierbare flash eeprom speicherzelle sowie ihr herstellungsverfahren und ihre anwendung - Google Patents

Skalierbare flash eeprom speicherzelle sowie ihr herstellungsverfahren und ihre anwendung

Info

Publication number
ATE239970T1
ATE239970T1 AT98906061T AT98906061T ATE239970T1 AT E239970 T1 ATE239970 T1 AT E239970T1 AT 98906061 T AT98906061 T AT 98906061T AT 98906061 T AT98906061 T AT 98906061T AT E239970 T1 ATE239970 T1 AT E239970T1
Authority
AT
Austria
Prior art keywords
memory cell
flash eeprom
over
application
production process
Prior art date
Application number
AT98906061T
Other languages
English (en)
Inventor
Ching-Shi Jenq
Original Assignee
Integrated Memory Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Integrated Memory Tech Inc filed Critical Integrated Memory Tech Inc
Application granted granted Critical
Publication of ATE239970T1 publication Critical patent/ATE239970T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Preparation Of Compounds By Using Micro-Organisms (AREA)
AT98906061T 1997-01-31 1998-01-30 Skalierbare flash eeprom speicherzelle sowie ihr herstellungsverfahren und ihre anwendung ATE239970T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/791,863 US5912843A (en) 1996-03-18 1997-01-31 Scalable flash EEPROM memory cell, method of manufacturing and operation thereof
PCT/US1998/001818 WO1998034233A1 (en) 1997-01-31 1998-01-30 A scalable flash eeprom memory cell, method of manufacturing and operation thereof

Publications (1)

Publication Number Publication Date
ATE239970T1 true ATE239970T1 (de) 2003-05-15

Family

ID=25155012

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98906061T ATE239970T1 (de) 1997-01-31 1998-01-30 Skalierbare flash eeprom speicherzelle sowie ihr herstellungsverfahren und ihre anwendung

Country Status (7)

Country Link
US (1) US5912843A (de)
EP (2) EP1313148A3 (de)
JP (1) JP2001526834A (de)
KR (1) KR100485985B1 (de)
AT (1) ATE239970T1 (de)
DE (1) DE69814363D1 (de)
WO (1) WO1998034233A1 (de)

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US6208557B1 (en) * 1999-05-21 2001-03-27 National Semiconductor Corporation EPROM and flash memory cells with source-side injection and a gate dielectric that traps hot electrons during programming
EP1116275A1 (de) * 1999-07-29 2001-07-18 Koninklijke Philips Electronics N.V. Nichtflüchtige halbleiterspeicheranordnung
US6232635B1 (en) * 2000-04-06 2001-05-15 Advanced Micro Devices, Inc. Method to fabricate a high coupling flash cell with less silicide seam problem
JP3558580B2 (ja) * 2000-04-11 2004-08-25 シャープ株式会社 セルアレイ、その動作方法及びその製造方法
US6559055B2 (en) 2000-08-15 2003-05-06 Mosel Vitelic, Inc. Dummy structures that protect circuit elements during polishing
US6355524B1 (en) 2000-08-15 2002-03-12 Mosel Vitelic, Inc. Nonvolatile memory structures and fabrication methods
JP2002133885A (ja) * 2000-10-30 2002-05-10 Toshiba Corp 不揮発性半導体記憶装置
JP4339112B2 (ja) * 2001-07-03 2009-10-07 エヌエックスピー ビー ヴィ 選択トランジスタとメモリトランジスタを含む複数のメモリセルを有する不揮発性メモリを備えた半導体装置の製造方法
TW546840B (en) * 2001-07-27 2003-08-11 Hitachi Ltd Non-volatile semiconductor memory device
US6821847B2 (en) 2001-10-02 2004-11-23 Mosel Vitelic, Inc. Nonvolatile memory structures and fabrication methods
US6584018B2 (en) 2001-10-05 2003-06-24 Mosel Vitelic, Inc. Nonvolatile memory structures and access methods
US6621115B2 (en) * 2001-11-06 2003-09-16 Integrated Memory Technologies, Inc. Scalable flash EEPROM memory cell with floating gate spacer wrapped by control gate
KR100456541B1 (ko) * 2002-01-04 2004-11-09 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
GB2395065B (en) * 2002-10-30 2005-01-19 Toumaz Technology Ltd Floating gate transistors
US6995060B2 (en) * 2003-03-19 2006-02-07 Promos Technologies Inc. Fabrication of integrated circuit elements in structures with protruding features
US6962851B2 (en) * 2003-03-19 2005-11-08 Promos Technologies, Inc. Nonvolatile memories and methods of fabrication
US6962852B2 (en) * 2003-03-19 2005-11-08 Promos Technologies Inc. Nonvolatile memories and methods of fabrication
US6902974B2 (en) * 2003-05-16 2005-06-07 Promos Technologies Inc. Fabrication of conductive gates for nonvolatile memories from layers with protruding portions
US7214585B2 (en) 2003-05-16 2007-05-08 Promos Technologies Inc. Methods of fabricating integrated circuits with openings that allow electrical contact to conductive features having self-aligned edges
US6974739B2 (en) * 2003-05-16 2005-12-13 Promos Technologies Inc. Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit
TWI221670B (en) * 2003-05-28 2004-10-01 Winbond Electronics Corp Stack-gate flash memory array
US7009244B2 (en) * 2003-07-02 2006-03-07 Integrated Memory Technologies, Inc. Scalable flash EEPROM memory cell with notched floating gate and graded source region
US6885044B2 (en) * 2003-07-30 2005-04-26 Promos Technologies, Inc. Arrays of nonvolatile memory cells wherein each cell has two conductive floating gates
US7169667B2 (en) 2003-07-30 2007-01-30 Promos Technologies Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate
US7060565B2 (en) * 2003-07-30 2006-06-13 Promos Technologies Inc. Fabrication of dielectric for a nonvolatile memory cell having multiple floating gates
US7101757B2 (en) * 2003-07-30 2006-09-05 Promos Technologies, Inc. Nonvolatile memory cells with buried channel transistors
US7052947B2 (en) * 2003-07-30 2006-05-30 Promos Technologies Inc. Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates
US6951782B2 (en) * 2003-07-30 2005-10-04 Promos Technologies, Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions
JP2005346819A (ja) * 2004-06-02 2005-12-15 Renesas Technology Corp 半導体装置
US7315056B2 (en) 2004-06-07 2008-01-01 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with program/erase and select gates
US7408222B2 (en) * 2006-03-27 2008-08-05 Infineon Technologies Ag Charge trapping device and method of producing the charge trapping device
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7974127B2 (en) * 2007-11-06 2011-07-05 Macronix International Co., Ltd. Operation methods for memory cell and array for reducing punch through leakage
US8300461B2 (en) * 2010-08-24 2012-10-30 Yield Microelectronics Corp. Area saving electrically-erasable-programmable read-only memory (EEPROM) array
JP6652445B2 (ja) * 2016-05-11 2020-02-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US10340010B2 (en) * 2016-08-16 2019-07-02 Silicon Storage Technology, Inc. Method and apparatus for configuring array columns and rows for accessing flash memory cells

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JPS5791561A (en) * 1980-11-28 1982-06-07 Fujitsu Ltd Semiconductor non-volatile memory device and manufacture therefor
US4531203A (en) * 1980-12-20 1985-07-23 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device and method for manufacturing the same
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JPH0814991B2 (ja) * 1988-01-28 1996-02-14 株式会社東芝 電気的消去可能不揮発性半導体記憶装置
JPH0748503B2 (ja) * 1988-11-29 1995-05-24 三菱電機株式会社 電界効果トランジスタの製造方法
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JPH03245575A (ja) * 1990-02-22 1991-11-01 Mitsubishi Electric Corp 半導体記憶装置及びその製造方法
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US5445983A (en) * 1994-10-11 1995-08-29 United Microelectronics Corporation Method of manufacturing EEPROM memory device with a select gate
US5856943A (en) * 1996-03-18 1999-01-05 Integrated Memory Technologies, Inc. Scalable flash EEPROM memory cell and array
US5668757A (en) * 1996-03-18 1997-09-16 Jeng; Ching-Shi Scalable flash eeprom memory cell and array

Also Published As

Publication number Publication date
KR100485985B1 (ko) 2005-05-03
JP2001526834A (ja) 2001-12-18
EP0963586A1 (de) 1999-12-15
DE69814363D1 (de) 2003-06-12
WO1998034233A1 (en) 1998-08-06
EP1313148A2 (de) 2003-05-21
US5912843A (en) 1999-06-15
KR20000070677A (ko) 2000-11-25
EP1313148A3 (de) 2004-03-03
EP0963586A4 (de) 2000-11-22
EP0963586B1 (de) 2003-05-07

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Legal Events

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