ATE170628T1 - Rastertunnelmikroskop mit freitragendem verstellungselement - Google Patents

Rastertunnelmikroskop mit freitragendem verstellungselement

Info

Publication number
ATE170628T1
ATE170628T1 AT92305283T AT92305283T ATE170628T1 AT E170628 T1 ATE170628 T1 AT E170628T1 AT 92305283 T AT92305283 T AT 92305283T AT 92305283 T AT92305283 T AT 92305283T AT E170628 T1 ATE170628 T1 AT E170628T1
Authority
AT
Austria
Prior art keywords
free
adjustment element
scanning tunnel
tunnel microscope
supporting adjustment
Prior art date
Application number
AT92305283T
Other languages
English (en)
Inventor
Yoshio Suzuki
Yutaka Hirai
Osamu Takamatsu
Masaru Nakayama
Takayuki Yagi
Yuji Kasanuki
Keisuke Yamamoto
Yasuhiro Shimada
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE170628T1 publication Critical patent/ATE170628T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/10—STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes
    • G01Q60/16—Probes, their manufacture, or their related instrumentation, e.g. holders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
    • G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041—Beam type
    • H10N30/2042—Cantilevers, i.e. having one fixed end
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041—Beam type
    • H10N30/2042—Cantilevers, i.e. having one fixed end
    • H10N30/2045—Cantilevers, i.e. having one fixed end adapted for in-plane bending displacement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041—Beam type
    • H10N30/2042—Cantilevers, i.e. having one fixed end
    • H10N30/2046—Cantilevers, i.e. having one fixed end adapted for multi-directional bending displacement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00—Applications, other than SPM, of scanning-probe techniques
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/832—Nanostructure having specified property, e.g. lattice-constant, thermal expansion coefficient
    • Y10S977/837—Piezoelectric property of nanomaterial
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/861—Scanning tunneling probe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/872—Positioner
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/873—Tip holder

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Micromachines (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
AT92305283T 1991-06-11 1992-06-09 Rastertunnelmikroskop mit freitragendem verstellungselement ATE170628T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3165282A JP2923813B2 (ja) 1991-06-11 1991-06-11 カンチレバー型変位素子、及びこれを用いた走査型トンネル顕微鏡、情報処理装置

Publications (1)

Publication Number Publication Date
ATE170628T1 true ATE170628T1 (de) 1998-09-15

Family

ID=15809371

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92305283T ATE170628T1 (de) 1991-06-11 1992-06-09 Rastertunnelmikroskop mit freitragendem verstellungselement

Country Status (6)

Country Link
US (1) US5357108A (de)
EP (1) EP0518618B1 (de)
JP (1) JP2923813B2 (de)
AT (1) ATE170628T1 (de)
CA (1) CA2070946C (de)
DE (1) DE69226817T2 (de)

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JP3402661B2 (ja) * 1992-07-06 2003-05-06 キヤノン株式会社 カンチレバー型プローブ、及びこれを用いた情報処理装置
JP3135779B2 (ja) * 1994-03-18 2001-02-19 キヤノン株式会社 情報処理装置
JP3192887B2 (ja) * 1994-09-21 2001-07-30 キヤノン株式会社 プローブ、該プローブを用いた走査型プローブ顕微鏡、および前記プローブを用いた記録再生装置
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DE19530092A1 (de) * 1995-08-16 1997-02-20 Daimler Benz Ag Überprüfbarer Foliendrucksensor
JP3679519B2 (ja) * 1995-09-14 2005-08-03 キヤノン株式会社 トンネル電流または微小力または磁気力検出用の微小ティップの製造方法、並びにその微小ティップを有するプローブの製造方法とそのプローブ、該プローブを有するプローブユニットと走査型プローブ顕微鏡及び情報記録再生装置
US5874668A (en) 1995-10-24 1999-02-23 Arch Development Corporation Atomic force microscope for biological specimens
JPH09196933A (ja) * 1996-01-19 1997-07-31 Canon Inc プローブとプローブの作製方法、及びプローブユニット、並びにこれを用いた情報記録再生装置
JPH10312592A (ja) * 1997-05-13 1998-11-24 Canon Inc 情報処理装置および情報処理方法
JP2000035396A (ja) 1998-07-16 2000-02-02 Canon Inc 微小突起を有するプローブ、及びその製造方法
KR100595146B1 (ko) * 1998-12-05 2006-08-30 엘지전자 주식회사 근접장광기록/재생장치
JP4576631B2 (ja) * 1999-11-10 2010-11-10 正喜 江刺 積層型圧電アクチュエータの製造方法
KR100364720B1 (ko) * 1999-12-29 2002-12-16 엘지전자 주식회사 초미세 탐침형 픽업 소자 및 그 제조방법
US6831765B2 (en) * 2001-02-22 2004-12-14 Canon Kabushiki Kaisha Tiltable-body apparatus, and method of fabricating the same
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JP2006317358A (ja) * 2005-05-16 2006-11-24 Canon Inc 電位測定装置、およびそれを用いた画像形成装置
US7382137B2 (en) * 2005-05-27 2008-06-03 Canon Kabushiki Kaisha Potential measuring apparatus
JP5188024B2 (ja) * 2006-02-09 2013-04-24 キヤノン株式会社 揺動体装置、電位測定装置、及び光偏向装置
CA2678943A1 (en) * 2007-03-13 2008-09-18 Nanoink, Inc. Nanolithography with use of viewports
KR101336962B1 (ko) * 2007-06-01 2013-12-04 삼성전자주식회사 복합 구조의 빔을 이용한 나노 공진기
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JP5787586B2 (ja) 2011-04-14 2015-09-30 キヤノン株式会社 電気機械変換装置
JP6355436B2 (ja) 2014-05-30 2018-07-11 キヤノン株式会社 受信装置、表示装置および受信制御プログラム
JP6596310B2 (ja) * 2015-11-11 2019-10-23 ローム株式会社 圧電センサ、センサシステム、および圧電素子
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Also Published As

Publication number Publication date
EP0518618A3 (en) 1993-06-16
CA2070946C (en) 1996-11-26
EP0518618B1 (de) 1998-09-02
JPH04364413A (ja) 1992-12-16
EP0518618A2 (de) 1992-12-16
DE69226817D1 (de) 1998-10-08
US5357108A (en) 1994-10-18
CA2070946A1 (en) 1992-12-12
DE69226817T2 (de) 1999-01-21
JP2923813B2 (ja) 1999-07-26

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