ATE169421T1 - Schaltung zur spannungsmessung bei geringer leistung - Google Patents

Schaltung zur spannungsmessung bei geringer leistung

Info

Publication number
ATE169421T1
ATE169421T1 AT92910904T AT92910904T ATE169421T1 AT E169421 T1 ATE169421 T1 AT E169421T1 AT 92910904 T AT92910904 T AT 92910904T AT 92910904 T AT92910904 T AT 92910904T AT E169421 T1 ATE169421 T1 AT E169421T1
Authority
AT
Austria
Prior art keywords
mos transistor
type mos
voltage signal
circuit
sensing
Prior art date
Application number
AT92910904T
Other languages
English (en)
Inventor
Ching S Jenq
Original Assignee
Silicon Storage Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Storage Tech Inc filed Critical Silicon Storage Tech Inc
Application granted granted Critical
Publication of ATE169421T1 publication Critical patent/ATE169421T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G11C16/225—Preventing erasure, programming or reading when power supply voltages are outside the required ranges
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
AT92910904T 1991-03-29 1992-03-09 Schaltung zur spannungsmessung bei geringer leistung ATE169421T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/677,297 US5181187A (en) 1991-03-29 1991-03-29 Low power voltage sensing circuit

Publications (1)

Publication Number Publication Date
ATE169421T1 true ATE169421T1 (de) 1998-08-15

Family

ID=24718125

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92910904T ATE169421T1 (de) 1991-03-29 1992-03-09 Schaltung zur spannungsmessung bei geringer leistung

Country Status (7)

Country Link
US (1) US5181187A (de)
EP (1) EP0580748B1 (de)
JP (1) JP3311751B2 (de)
AT (1) ATE169421T1 (de)
CA (1) CA2107221C (de)
DE (1) DE69226524T2 (de)
WO (1) WO1992017886A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109698688A (zh) * 2017-10-20 2019-04-30 立积电子股份有限公司 反相器

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6078311A (en) * 1996-03-26 2000-06-20 Pacific Digital Peripherals, Inc. Joystick game adapter card for a personal computer
GB9609761D0 (en) * 1996-05-10 1996-07-17 Jwi Ltd Low air permeability papermaking fabric including flattened secondary weft yarns and pin seam
KR20010023048A (ko) * 1997-08-20 2001-03-26 인피니언 테크놀로지스 아게 집적 회로의 동작 상태를 모니터링하는 방법
JP4245904B2 (ja) * 2002-11-14 2009-04-02 セイコーインスツル株式会社 電圧検出回路
JP5879165B2 (ja) * 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 半導体装置
US11609249B2 (en) * 2020-11-23 2023-03-21 Richwave Technology Corp. Voltage state detector
TWI762317B (zh) 2021-05-17 2022-04-21 力晶積成電子製造股份有限公司 感測電路以及測試裝置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5719677A (en) * 1981-06-01 1982-02-01 Seiko Epson Corp Voltage detecting circuit
JPS58151124A (ja) * 1982-03-04 1983-09-08 Ricoh Co Ltd レベル変換回路
JPS61117794A (ja) * 1984-11-13 1986-06-05 Fujitsu Ltd 不揮発性半導体記憶装置
DE3529494A1 (de) * 1985-08-17 1987-02-19 Bosch Gmbh Robert Schaltungsanordnung umfassend einen mikrocomputer und einen mit diesem im datenaustausch stehenden halbleiter-speicher
JPS63104290A (ja) * 1986-10-21 1988-05-09 Nec Corp 半導体記憶装置
FR2613491B1 (fr) * 1987-04-03 1989-07-21 Thomson Csf Dispositif de detection du niveau haut d'une tension en technologie mos
JPH0743952B2 (ja) * 1988-11-30 1995-05-15 日本電気株式会社 電源電圧低下検出回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109698688A (zh) * 2017-10-20 2019-04-30 立积电子股份有限公司 反相器

Also Published As

Publication number Publication date
EP0580748B1 (de) 1998-08-05
WO1992017886A1 (en) 1992-10-15
EP0580748A1 (de) 1994-02-02
EP0580748A4 (de) 1994-08-31
JPH06506312A (ja) 1994-07-14
DE69226524D1 (de) 1998-09-10
DE69226524T2 (de) 1999-03-25
JP3311751B2 (ja) 2002-08-05
US5181187A (en) 1993-01-19
CA2107221A1 (en) 1992-09-30
CA2107221C (en) 2000-11-28

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties