ATE145632T1 - Durchsichtige leitfähige verbindung aus zinkoxyfluorid - Google Patents

Durchsichtige leitfähige verbindung aus zinkoxyfluorid

Info

Publication number
ATE145632T1
ATE145632T1 AT90905273T AT90905273T ATE145632T1 AT E145632 T1 ATE145632 T1 AT E145632T1 AT 90905273 T AT90905273 T AT 90905273T AT 90905273 T AT90905273 T AT 90905273T AT E145632 T1 ATE145632 T1 AT E145632T1
Authority
AT
Austria
Prior art keywords
zinc
oxyfluoride
fluorine
oxygen
electrically conductive
Prior art date
Application number
AT90905273T
Other languages
English (en)
Inventor
President And Fellows Of H The
Original Assignee
Harvard College
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harvard College filed Critical Harvard College
Application granted granted Critical
Publication of ATE145632T1 publication Critical patent/ATE145632T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/04—Halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0102—Constructional details, not otherwise provided for in this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/12—Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153—Constructional details
    • G02F1/1533—Constructional details structural features not otherwise provided for
    • G02F2001/1536—Constructional details structural features not otherwise provided for additional, e.g. protective, layer inside the cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Surface Treatment Of Glass (AREA)
  • Chemical Vapour Deposition (AREA)
  • Conductive Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Paints Or Removers (AREA)
  • Glass Compositions (AREA)
  • Liquid Crystal (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
AT90905273T 1989-03-17 1990-03-14 Durchsichtige leitfähige verbindung aus zinkoxyfluorid ATE145632T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/324,808 US4990286A (en) 1989-03-17 1989-03-17 Zinc oxyfluoride transparent conductor

Publications (1)

Publication Number Publication Date
ATE145632T1 true ATE145632T1 (de) 1996-12-15

Family

ID=23265181

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90905273T ATE145632T1 (de) 1989-03-17 1990-03-14 Durchsichtige leitfähige verbindung aus zinkoxyfluorid

Country Status (7)

Country Link
US (1) US4990286A (de)
EP (1) EP0463079B1 (de)
JP (1) JPH04506505A (de)
AT (1) ATE145632T1 (de)
DE (1) DE69029264T2 (de)
HK (1) HK1007552A1 (de)
WO (1) WO1990011247A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3346584B2 (ja) * 1991-03-29 2002-11-18 三井金属鉱業株式会社 繊維状導電性フィラー及びその製造方法
US5135581A (en) * 1991-04-08 1992-08-04 Minnesota Mining And Manufacturing Company Light transmissive electrically conductive oxide electrode formed in the presence of a stabilizing gas
US5316697A (en) * 1993-03-24 1994-05-31 Kerr-Mcgee Corporation Conductive, particulate, fluorine-doped zinc oxide
JP2858444B2 (ja) * 1993-10-18 1999-02-17 キヤノン株式会社 光起電力素子及びその製造法
US5397920A (en) * 1994-03-24 1995-03-14 Minnesota Mining And Manufacturing Company Light transmissive, electrically-conductive, oxide film and methods of production
US5517389A (en) * 1994-04-11 1996-05-14 Ford Motor Company Electrochromic lamp assemblies
EP0707320A1 (de) * 1994-10-13 1996-04-17 AT&T Corp. Durchsichtige Leiter mit Zink-Indium-Oxide und Verfahren zur Herstellung dieser Filme
JP3752010B2 (ja) * 1995-07-04 2006-03-08 新日本石油株式会社 調光素子
US5597515A (en) * 1995-09-27 1997-01-28 Kerr-Mcgee Corporation Conductive, powdered fluorine-doped titanium dioxide and method of preparation
US5849108A (en) * 1996-04-26 1998-12-15 Canon Kabushiki Kaisha Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction
WO1998008245A2 (en) * 1996-08-15 1998-02-26 President And Fellows Of Harvard College Chemical vapor deposition of fluorine-doped zinc oxide
US6071561A (en) * 1997-08-13 2000-06-06 President And Fellows Of Harvard College Chemical vapor deposition of fluorine-doped zinc oxide
US6587097B1 (en) 2000-11-28 2003-07-01 3M Innovative Properties Co. Display system
EP1289025A1 (de) * 2001-08-30 2003-03-05 Universite De Neuchatel Abscheidungsverfahren von einer Oxydschicht auf einem Substrat und dieses verwendende photovoltaische Zelle
JP2005097018A (ja) * 2003-09-22 2005-04-14 Air Water Inc 難帯電ガラス基板の製法およびそれによって得られた難帯電ガラス基板
GB0518383D0 (en) * 2005-09-09 2005-10-19 Pilkington Plc Deposition process
US8197914B2 (en) * 2005-11-21 2012-06-12 Air Products And Chemicals, Inc. Method for depositing zinc oxide at low temperatures and products formed thereby
WO2008027085A1 (en) * 2006-08-29 2008-03-06 Pilkington Group Limited Method of making low resistivity doped zinc oxide coatings and the articles formed thereby
CN101541701B (zh) * 2006-08-29 2013-07-17 皮尔金顿集团有限公司 制备低电阻率、掺杂氧化锌涂层玻璃物件的方法及由此制成的涂层玻璃物件
ATE528420T1 (de) * 2006-09-08 2011-10-15 Pilkington Group Ltd Tieftemperaturverfahren zur herstellung eines mit zinkoxid beschichteten gegenstands
US9528182B2 (en) 2009-06-22 2016-12-27 Arkema Inc. Chemical vapor deposition using N,O polydentate ligand complexes of metals
EP2738815B1 (de) 2012-11-30 2016-02-10 Samsung Electronics Co., Ltd Halbleitermaterialien, diese Materialien beinhaltende Transistoren, und elektronische Vorrichtungen mit Transistoren
CN103747409B (zh) 2013-12-31 2017-02-08 北京智谷睿拓技术服务有限公司 扬声装置、扬声方法及交互设备
CN103702259B (zh) 2013-12-31 2017-12-12 北京智谷睿拓技术服务有限公司 交互装置及交互方法
CN104036789B (zh) 2014-01-03 2018-02-02 北京智谷睿拓技术服务有限公司 多媒体处理方法及多媒体装置
CN119087556B (zh) * 2024-11-07 2025-03-14 新菲光通信技术有限公司 全反射膜及其制备方法、反光器件

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR20237E (fr) * 1916-03-16 1917-03-14 Fr Des Roues Amovibles Soc Roue amovible pleine
US2695214A (en) * 1945-10-11 1954-11-23 Donnelle W Sherwood Method of making metallic oxyfluorides
US2934537A (en) * 1954-02-12 1960-04-26 Francis E Cislak Process of preparing pyridine and 3-picoline
NL282476A (de) * 1959-10-26
US3555102A (en) * 1968-05-08 1971-01-12 Onoda Cement Co Ltd Method for producing a vinyl fluoride
AU6984274A (en) * 1973-06-08 1975-12-11 Grace W R & Co Printing plate process
US4402924A (en) * 1978-01-16 1983-09-06 Exxon Research And Engineering Co. Preparation of high surface area metal fluorides and metal oxyfluorides, especially aluminum fluoride extrudates
US4514518A (en) * 1981-03-25 1985-04-30 The Dow Chemical Company Fluoride-substituted cobalt spinels
US4592904A (en) * 1982-02-22 1986-06-03 Cabot Corporation Process for producing columbium oxyfluoride
JPH0682625B2 (ja) * 1985-06-04 1994-10-19 シーメンス ソーラー インダストリーズ，エル．ピー． 酸化亜鉛膜の蒸着方法
JPH0645885B2 (ja) * 1985-12-16 1994-06-15 キヤノン株式会社 堆積膜形成法
JPH01249634A (ja) * 1988-03-30 1989-10-04 Nippon Sheet Glass Co Ltd 導電性ガラスおよびその製造方法

Also Published As

Publication number Publication date
EP0463079A1 (de) 1992-01-02
US4990286A (en) 1991-02-05
EP0463079B1 (de) 1996-11-27
EP0463079A4 (en) 1992-04-01
DE69029264D1 (de) 1997-01-09
HK1007552A1 (en) 1999-04-16
JPH04506505A (ja) 1992-11-12
WO1990011247A1 (en) 1990-10-04
DE69029264T2 (de) 1997-04-03

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