WO1998008245A3 - Chemical vapor deposition of fluorine-doped zinc oxide - Google Patents

Chemical vapor deposition of fluorine-doped zinc oxide Download PDF

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Publication number
WO1998008245A3
WO1998008245A3 PCT/US1997/011552 US9711552W WO9808245A3 WO 1998008245 A3 WO1998008245 A3 WO 1998008245A3 US 9711552 W US9711552 W US 9711552W WO 9808245 A3 WO9808245 A3 WO 9808245A3
Authority
WO
WIPO (PCT)
Prior art keywords
fluorine
zinc oxide
doped zinc
films
chelate
Prior art date
Application number
PCT/US1997/011552
Other languages
French (fr)
Other versions
WO1998008245A2 (en
Inventor
Roy G Gordon
Keith Kramer
Haifan Liang
Original Assignee
Harvard College
Roy G Gordon
Keith Kramer
Haifan Liang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harvard College, Roy G Gordon, Keith Kramer, Haifan Liang filed Critical Harvard College
Priority to US09/242,093 priority Critical patent/US6071561A/en
Publication of WO1998008245A2 publication Critical patent/WO1998008245A2/en
Publication of WO1998008245A3 publication Critical patent/WO1998008245A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Films of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, an oxygen source, and a fluorine source. For example, a vapor mixture of the N, N, N', N'-tetraethylethylenediamine chelate of diethylzinc, ethanol, hexafluoropropene and nitrogen deposits fluorine-doped zinc oxide films on substrates heated to temperatures around 450 °C. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity. These films are useful in solar cells, flat-panel display devices, electrochromic absorbers and reflectors, energy-conserving heat mirrors, and anti-static coatings.
PCT/US1997/011552 1996-08-15 1997-08-13 Chemical vapor deposition of fluorine-doped zinc oxide WO1998008245A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US09/242,093 US6071561A (en) 1997-08-13 1997-08-13 Chemical vapor deposition of fluorine-doped zinc oxide

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2411396P 1996-08-15 1996-08-15
US60/024,113 1997-04-04

Publications (2)

Publication Number Publication Date
WO1998008245A2 WO1998008245A2 (en) 1998-02-26
WO1998008245A3 true WO1998008245A3 (en) 1998-07-23

Family

ID=21818925

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1997/011552 WO1998008245A2 (en) 1996-08-15 1997-08-13 Chemical vapor deposition of fluorine-doped zinc oxide

Country Status (1)

Country Link
WO (1) WO1998008245A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6266177B1 (en) 1999-11-18 2001-07-24 Donnelly Corporation Electrochromic devices
GB0803702D0 (en) 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
GB0915376D0 (en) 2009-09-03 2009-10-07 Isis Innovation Transparent conducting oxides

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990286A (en) * 1989-03-17 1991-02-05 President And Fellows Of Harvard College Zinc oxyfluoride transparent conductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990286A (en) * 1989-03-17 1991-02-05 President And Fellows Of Harvard College Zinc oxyfluoride transparent conductor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BRIOT O ET AL: "MOVPE growth and optical characterization of high-quality ZnSe-ZnS superlattices using a novel zinc adduct precursor", COMPOUND SEMICONDUCTOR EPITAXY SYMPOSIUM, COMPOUND SEMICONDUCTOR EPITAXY, SAN FRANCISCO, CA, USA, 4-7 APRIL 1994, 1994, PITTSBURGH, PA, USA, MATER. RES. SOC, USA, pages 515 - 520, XP002065796 *
JONES A C ET AL: "THE USE OF DIMETHYLZINC-AMINE ADDUCTS FOR THE P-DOPING OF INP AND RELATED ALLOYS", JOURNAL OF CRYSTAL GROWTH, vol. 130, no. 1/02, 1 May 1993 (1993-05-01), pages 295 - 299, XP000418121 *

Also Published As

Publication number Publication date
WO1998008245A2 (en) 1998-02-26

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