ATE1034T1 - Referenzquelle auf einem integrierten fet-baustein sowie verfahren zum betrieb der referenzquelle. - Google Patents
Referenzquelle auf einem integrierten fet-baustein sowie verfahren zum betrieb der referenzquelle.Info
- Publication number
- ATE1034T1 ATE1034T1 AT79103255T AT79103255T ATE1034T1 AT E1034 T1 ATE1034 T1 AT E1034T1 AT 79103255 T AT79103255 T AT 79103255T AT 79103255 T AT79103255 T AT 79103255T AT E1034 T1 ATE1034 T1 AT E1034T1
- Authority
- AT
- Austria
- Prior art keywords
- reference source
- stages
- voltage
- reference voltage
- value
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Read Only Memory (AREA)
- Control Of Electrical Variables (AREA)
- Analogue/Digital Conversion (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19782842546 DE2842546A1 (de) | 1978-09-29 | 1978-09-29 | Referenzquelle auf einem integrierten fet-baustein |
EP79103255A EP0010149B1 (de) | 1978-09-29 | 1979-09-03 | Referenzquelle auf einem integrierten FET-Baustein sowie Verfahren zum Betrieb der Referenzquelle |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE1034T1 true ATE1034T1 (de) | 1982-05-15 |
Family
ID=6050911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT79103255T ATE1034T1 (de) | 1978-09-29 | 1979-09-03 | Referenzquelle auf einem integrierten fet-baustein sowie verfahren zum betrieb der referenzquelle. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4357571A (de) |
EP (1) | EP0010149B1 (de) |
JP (1) | JPS5546694A (de) |
AT (1) | ATE1034T1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58142413A (ja) * | 1982-02-19 | 1983-08-24 | Seiko Epson Corp | 定電圧電源回路 |
JPH07117862B2 (ja) * | 1985-04-18 | 1995-12-18 | 日本電気アイシーマイコンシステム株式会社 | 基準電圧源 |
JPS6269719A (ja) * | 1985-09-24 | 1987-03-31 | Toshiba Corp | レベル変換論理回路 |
NL8800851A (nl) * | 1988-04-05 | 1989-11-01 | Philips Nv | Halfgeleidergeheugeninrichting. |
KR910001068B1 (ko) * | 1988-07-11 | 1991-02-23 | 삼성전자 주식회사 | 메모리장치의 공급전압 안정화회로 |
FR2650109B1 (fr) * | 1989-07-20 | 1993-04-02 | Gemplus Card Int | Circuit integre mos a tension de seuil ajustable |
JPH03296118A (ja) * | 1990-04-13 | 1991-12-26 | Oki Micro Design Miyazaki:Kk | 基準電圧発生回路 |
US5146151A (en) * | 1990-06-08 | 1992-09-08 | United Technologies Corporation | Floating voltage reference having dual output voltage |
NL9100398A (nl) * | 1991-03-06 | 1992-10-01 | Philips Nv | Regelbare spanning-stroomomzetter met derde graads vervormingsreductie. |
US5627456A (en) * | 1995-06-07 | 1997-05-06 | International Business Machines Corporation | All FET fully integrated current reference circuit |
US5838192A (en) * | 1996-01-17 | 1998-11-17 | Analog Devices, Inc. | Junction field effect voltage reference |
JP3717388B2 (ja) * | 2000-09-27 | 2005-11-16 | 株式会社リコー | 基準電圧発生回路及びその出力値調整方法並びに電源装置 |
US7429888B2 (en) * | 2004-01-05 | 2008-09-30 | Intersil Americas, Inc. | Temperature compensation for floating gate circuits |
DE102009023807A1 (de) * | 2009-06-03 | 2010-12-09 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Halbleiterstruktur, insbesondere BIB-Detektor mit einem DEPFET als Ausleseelement, sowie entsprechendes Betriebsverfahren |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3317850A (en) * | 1963-04-29 | 1967-05-02 | Fairchild Camera Instr Co | Temperature-stable differential amplifier using field-effect devices |
US3469112A (en) * | 1966-12-01 | 1969-09-23 | Westinghouse Canada Ltd | Storage circuit utilizing differential amplifier stages |
US3755721A (en) * | 1970-06-15 | 1973-08-28 | Intel Corp | Floating gate solid state storage device and method for charging and discharging same |
US4087795A (en) * | 1974-09-20 | 1978-05-02 | Siemens Aktiengesellschaft | Memory field effect storage device |
JPS5522027B2 (de) * | 1974-11-22 | 1980-06-13 | ||
US3975648A (en) * | 1975-06-16 | 1976-08-17 | Hewlett-Packard Company | Flat-band voltage reference |
US4077012A (en) * | 1976-01-28 | 1978-02-28 | Nippon Gakki Seizo Kabushiki Kaisha | Amplifier devices |
US4175290A (en) * | 1977-07-28 | 1979-11-20 | Hughes Aircraft Company | Integrated semiconductor memory array having improved logic latch circuitry |
US4173791A (en) * | 1977-09-16 | 1979-11-06 | Fairchild Camera And Instrument Corporation | Insulated gate field-effect transistor read-only memory array |
-
1979
- 1979-08-20 US US06/068,216 patent/US4357571A/en not_active Expired - Lifetime
- 1979-09-03 EP EP79103255A patent/EP0010149B1/de not_active Expired
- 1979-09-03 AT AT79103255T patent/ATE1034T1/de not_active IP Right Cessation
- 1979-09-28 JP JP12425779A patent/JPS5546694A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0010149B1 (de) | 1982-05-12 |
US4357571A (en) | 1982-11-02 |
EP0010149A1 (de) | 1980-04-30 |
JPS5546694A (en) | 1980-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE1034T1 (de) | Referenzquelle auf einem integrierten fet-baustein sowie verfahren zum betrieb der referenzquelle. | |
IT7925850A0 (it) | Apparecchiatura per provare circuiti semiconduttori integrati. | |
DE3585364D1 (de) | Halbleitervorrichtungen mit hoher durchbruchspannung. | |
DE69113987D1 (de) | Monolitische Halbleiteranordnung bestehend aus einer integrierten Kontrollschaltung und aus mindestens einem Leistungstransistor, die auf demselben Chip integriert sind und Herstellungsverfahren. | |
JPS5693363A (en) | Semiconductor memory | |
JPS62177797A (ja) | 電気的にプログラム可能な半導体メモリ装置とアレ−のプログラミング電流を制御する方法 | |
JPS5284987A (en) | Voltage dividing circuit | |
SE8206040D0 (sv) | Anordning for kontroll av kontaktavbrenning hos elektriska kopplingsapparater | |
EP0091307A3 (de) | Konstanter Strom- oder Spannungsquellentransistorkreis | |
EP0097916A3 (de) | Energieversorgung für Mehrmotorenantriebe | |
ATE41568T1 (de) | Schaltungsanordnung zur speisung von elektrischen verbrauchern mit einer gleichspannung. | |
NO162259C (no) | Anordning til fjerning av statisk elektrisitet. | |
SE8101432L (sv) | Forsterkarkrets | |
IT1141922B (it) | Generatore di tensione costante per circuiti integrati | |
FR2398334B1 (de) | ||
DE3587264D1 (de) | Schnittstelle zwischen numerisch gesteuerter vorrichtung und der regelungsschaltung der elektrischen spannung. | |
SE8105505A0 (sv) | Högspänningsregleranordning | |
DE3583208D1 (de) | Halbleiteranordnung mit hoher durchbruchspannung. | |
JPS56103536A (en) | Mis output circuit | |
SU504191A1 (ru) | Источник питани с регулируемым выходным напр жением | |
SU1030955A1 (ru) | Электрически управл емое сопротивление | |
DE3381034D1 (de) | Steuerung der substratinjektion bei lateralen bipolaren transistoren. | |
NL7703959A (nl) | Spanningsregelaar voor aftaktransformatoren. | |
SU641532A1 (ru) | Устройство дл задержки | |
JPS5354481A (en) | Testing system of non-volatile memory |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
REN | Ceased due to non-payment of the annual fee |