ATE1034T1 - Referenzquelle auf einem integrierten fet-baustein sowie verfahren zum betrieb der referenzquelle. - Google Patents

Referenzquelle auf einem integrierten fet-baustein sowie verfahren zum betrieb der referenzquelle.

Info

Publication number
ATE1034T1
ATE1034T1 AT79103255T AT79103255T ATE1034T1 AT E1034 T1 ATE1034 T1 AT E1034T1 AT 79103255 T AT79103255 T AT 79103255T AT 79103255 T AT79103255 T AT 79103255T AT E1034 T1 ATE1034 T1 AT E1034T1
Authority
AT
Austria
Prior art keywords
reference source
stages
voltage
reference voltage
value
Prior art date
Application number
AT79103255T
Other languages
English (en)
Inventor
Bernward Dipl.-Ing. Roessler
Original Assignee
Siemens Aktiengesellschaft Berlin Und Muenchen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19782842546 external-priority patent/DE2842546A1/de
Application filed by Siemens Aktiengesellschaft Berlin Und Muenchen filed Critical Siemens Aktiengesellschaft Berlin Und Muenchen
Application granted granted Critical
Publication of ATE1034T1 publication Critical patent/ATE1034T1/de

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Read Only Memory (AREA)
  • Control Of Electrical Variables (AREA)
  • Analogue/Digital Conversion (AREA)
AT79103255T 1978-09-29 1979-09-03 Referenzquelle auf einem integrierten fet-baustein sowie verfahren zum betrieb der referenzquelle. ATE1034T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19782842546 DE2842546A1 (de) 1978-09-29 1978-09-29 Referenzquelle auf einem integrierten fet-baustein
EP79103255A EP0010149B1 (de) 1978-09-29 1979-09-03 Referenzquelle auf einem integrierten FET-Baustein sowie Verfahren zum Betrieb der Referenzquelle

Publications (1)

Publication Number Publication Date
ATE1034T1 true ATE1034T1 (de) 1982-05-15

Family

ID=6050911

Family Applications (1)

Application Number Title Priority Date Filing Date
AT79103255T ATE1034T1 (de) 1978-09-29 1979-09-03 Referenzquelle auf einem integrierten fet-baustein sowie verfahren zum betrieb der referenzquelle.

Country Status (4)

Country Link
US (1) US4357571A (de)
EP (1) EP0010149B1 (de)
JP (1) JPS5546694A (de)
AT (1) ATE1034T1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58142413A (ja) * 1982-02-19 1983-08-24 Seiko Epson Corp 定電圧電源回路
JPH07117862B2 (ja) * 1985-04-18 1995-12-18 日本電気アイシーマイコンシステム株式会社 基準電圧源
JPS6269719A (ja) * 1985-09-24 1987-03-31 Toshiba Corp レベル変換論理回路
NL8800851A (nl) * 1988-04-05 1989-11-01 Philips Nv Halfgeleidergeheugeninrichting.
KR910001068B1 (ko) * 1988-07-11 1991-02-23 삼성전자 주식회사 메모리장치의 공급전압 안정화회로
FR2650109B1 (fr) * 1989-07-20 1993-04-02 Gemplus Card Int Circuit integre mos a tension de seuil ajustable
JPH03296118A (ja) * 1990-04-13 1991-12-26 Oki Micro Design Miyazaki:Kk 基準電圧発生回路
US5146151A (en) * 1990-06-08 1992-09-08 United Technologies Corporation Floating voltage reference having dual output voltage
NL9100398A (nl) * 1991-03-06 1992-10-01 Philips Nv Regelbare spanning-stroomomzetter met derde graads vervormingsreductie.
US5627456A (en) * 1995-06-07 1997-05-06 International Business Machines Corporation All FET fully integrated current reference circuit
US5838192A (en) * 1996-01-17 1998-11-17 Analog Devices, Inc. Junction field effect voltage reference
JP3717388B2 (ja) * 2000-09-27 2005-11-16 株式会社リコー 基準電圧発生回路及びその出力値調整方法並びに電源装置
US7429888B2 (en) * 2004-01-05 2008-09-30 Intersil Americas, Inc. Temperature compensation for floating gate circuits
DE102009023807A1 (de) * 2009-06-03 2010-12-09 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiterstruktur, insbesondere BIB-Detektor mit einem DEPFET als Ausleseelement, sowie entsprechendes Betriebsverfahren

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3317850A (en) * 1963-04-29 1967-05-02 Fairchild Camera Instr Co Temperature-stable differential amplifier using field-effect devices
USRE27668E (en) 1966-03-16 1973-06-12 mos fet
US3469112A (en) * 1966-12-01 1969-09-23 Westinghouse Canada Ltd Storage circuit utilizing differential amplifier stages
US3755721A (en) * 1970-06-15 1973-08-28 Intel Corp Floating gate solid state storage device and method for charging and discharging same
US4087795A (en) * 1974-09-20 1978-05-02 Siemens Aktiengesellschaft Memory field effect storage device
JPS5522027B2 (de) * 1974-11-22 1980-06-13
US3975648A (en) * 1975-06-16 1976-08-17 Hewlett-Packard Company Flat-band voltage reference
US4077012A (en) * 1976-01-28 1978-02-28 Nippon Gakki Seizo Kabushiki Kaisha Amplifier devices
US4175290A (en) * 1977-07-28 1979-11-20 Hughes Aircraft Company Integrated semiconductor memory array having improved logic latch circuitry
US4173791A (en) * 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory array

Also Published As

Publication number Publication date
US4357571A (en) 1982-11-02
EP0010149B1 (de) 1982-05-12
JPS5546694A (en) 1980-04-01
EP0010149A1 (de) 1980-04-30

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Legal Events

Date Code Title Description
REN Ceased due to non-payment of the annual fee