DE3381034D1 - Steuerung der substratinjektion bei lateralen bipolaren transistoren. - Google Patents

Steuerung der substratinjektion bei lateralen bipolaren transistoren.

Info

Publication number
DE3381034D1
DE3381034D1 DE8383402248T DE3381034T DE3381034D1 DE 3381034 D1 DE3381034 D1 DE 3381034D1 DE 8383402248 T DE8383402248 T DE 8383402248T DE 3381034 T DE3381034 T DE 3381034T DE 3381034 D1 DE3381034 D1 DE 3381034D1
Authority
DE
Germany
Prior art keywords
control
bipolar transistors
lateral bipolar
substrate injection
injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383402248T
Other languages
English (en)
Inventor
Peter R Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Application granted granted Critical
Publication of DE3381034D1 publication Critical patent/DE3381034D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
DE8383402248T 1982-11-22 1983-11-22 Steuerung der substratinjektion bei lateralen bipolaren transistoren. Expired - Lifetime DE3381034D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/443,846 US4507848A (en) 1982-11-22 1982-11-22 Control of substrate injection in lateral bipolar transistors

Publications (1)

Publication Number Publication Date
DE3381034D1 true DE3381034D1 (de) 1990-02-01

Family

ID=23762413

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383402248T Expired - Lifetime DE3381034D1 (de) 1982-11-22 1983-11-22 Steuerung der substratinjektion bei lateralen bipolaren transistoren.

Country Status (5)

Country Link
US (1) US4507848A (de)
EP (1) EP0110773B1 (de)
JP (1) JPS59104166A (de)
CA (1) CA1205923A (de)
DE (1) DE3381034D1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4669177A (en) * 1985-10-28 1987-06-02 Texas Instruments Incorporated Process for making a lateral bipolar transistor in a standard CSAG process
US5102812A (en) * 1989-11-09 1992-04-07 Bell Communications Research Method of making a lateral bipolar heterojunction structure
US11094806B2 (en) 2017-12-29 2021-08-17 Texas Instruments Incorporated Fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3383567A (en) * 1965-09-15 1968-05-14 Ion Physics Corp Solid state translating device comprising irradiation implanted conductivity ions
US3443174A (en) * 1966-05-17 1969-05-06 Sprague Electric Co L-h junction lateral transistor
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
DE2507366C3 (de) * 1975-02-20 1980-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Unterdrückung parasitärer Schaltungselemente
DE2507613C3 (de) * 1975-02-21 1979-07-05 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines invers betriebenen Transistors
US4025364A (en) * 1975-08-11 1977-05-24 Fairchild Camera And Instrument Corporation Process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases
US4167425A (en) * 1975-09-19 1979-09-11 Siemens Aktiengesellschaft Method for producing lateral bipolar transistor by ion-implantation and controlled temperature treatment
US4115797A (en) * 1976-10-04 1978-09-19 Fairchild Camera And Instrument Corporation Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector
US4144098A (en) * 1977-04-28 1979-03-13 Hughes Aircraft Company P+ Buried layer for I2 L isolation by ion implantation
NL7709363A (nl) * 1977-08-25 1979-02-27 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd onder toepassing van een dergelijke werkwijze.
US4231057A (en) * 1978-11-13 1980-10-28 Fujitsu Limited Semiconductor device and method for its preparation
US4201800A (en) * 1978-04-28 1980-05-06 International Business Machines Corp. Hardened photoresist master image mask process
JPS5534619U (de) * 1978-08-25 1980-03-06
JPS56115565A (en) * 1980-02-19 1981-09-10 Fujitsu Ltd Semiconductor device
US4259680A (en) * 1980-04-17 1981-03-31 Bell Telephone Laboratories, Incorporated High speed lateral bipolar transistor
US4398338A (en) * 1980-12-24 1983-08-16 Fairchild Camera & Instrument Corp. Fabrication of high speed, nonvolatile, electrically erasable memory cell and system utilizing selective masking, deposition and etching techniques
US4433471A (en) * 1982-01-18 1984-02-28 Fairchild Camera & Instrument Corporation Method for the formation of high density memory cells using ion implantation techniques

Also Published As

Publication number Publication date
EP0110773A2 (de) 1984-06-13
EP0110773A3 (en) 1985-09-18
US4507848A (en) 1985-04-02
JPS59104166A (ja) 1984-06-15
CA1205923A (en) 1986-06-10
EP0110773B1 (de) 1989-12-27
JPH0362015B2 (de) 1991-09-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition