AT311419B - Verfahren zur Getterung schnell diffundierender Verunreinigungen in Halbleiterkristallscheiben - Google Patents

Verfahren zur Getterung schnell diffundierender Verunreinigungen in Halbleiterkristallscheiben

Info

Publication number
AT311419B
AT311419B AT1180269A AT1180269A AT311419B AT 311419 B AT311419 B AT 311419B AT 1180269 A AT1180269 A AT 1180269A AT 1180269 A AT1180269 A AT 1180269A AT 311419 B AT311419 B AT 311419B
Authority
AT
Austria
Prior art keywords
gettering
semiconductor crystal
crystal wafers
diffusing impurities
rapidly diffusing
Prior art date
Application number
AT1180269A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681816083 external-priority patent/DE1816083C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT311419B publication Critical patent/AT311419B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3228Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of AIIIBV compounds, e.g. to make them semi-insulating
    • AHUMAN NECESSITIES
    • A01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01DHARVESTING; MOWING
    • A01D19/00Digging machines with centrifugal wheels, drums or spinners
    • A01D19/04Digging machines with centrifugal wheels, drums or spinners with working tools rotating around a horizontal axis arranged parallel to the direction of travel
    • A01D19/06Digging machines with centrifugal wheels, drums or spinners with working tools rotating around a horizontal axis arranged parallel to the direction of travel with scoop wheels or drums
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Environmental Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
AT1180269A 1968-12-20 1969-12-18 Verfahren zur Getterung schnell diffundierender Verunreinigungen in Halbleiterkristallscheiben AT311419B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681816083 DE1816083C3 (de) 1968-12-20 Verfahren zur Getterung schnell diffundierender Verunreinigungen in Halbleiterkristallscheiben

Publications (1)

Publication Number Publication Date
AT311419B true AT311419B (de) 1973-11-12

Family

ID=5716946

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1180269A AT311419B (de) 1968-12-20 1969-12-18 Verfahren zur Getterung schnell diffundierender Verunreinigungen in Halbleiterkristallscheiben

Country Status (6)

Country Link
AT (1) AT311419B (enrdf_load_stackoverflow)
CH (1) CH522290A (enrdf_load_stackoverflow)
FR (1) FR2026656B1 (enrdf_load_stackoverflow)
GB (1) GB1267700A (enrdf_load_stackoverflow)
NL (1) NL6918858A (enrdf_load_stackoverflow)
SE (1) SE363243B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1307546A (en) * 1970-05-22 1973-02-21 Mullard Ltd Methods of manufacturing semiconductor devices
JPH01214127A (ja) * 1987-12-30 1989-08-28 Monsanto Co 単結晶ガリウムヒ素半導体基板

Also Published As

Publication number Publication date
FR2026656A1 (enrdf_load_stackoverflow) 1970-09-18
DE1816083A1 (de) 1970-06-25
NL6918858A (enrdf_load_stackoverflow) 1970-06-23
GB1267700A (en) 1972-03-22
FR2026656B1 (enrdf_load_stackoverflow) 1975-04-18
CH522290A (de) 1972-06-15
DE1816083B2 (de) 1976-05-13
SE363243B (enrdf_load_stackoverflow) 1974-01-14

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee