AT259015B - Verfahren zum Aufbringen von nebeneinander liegenden, durch einen engen Zwischenraum voneinander getrennten Metallschichten auf eine Unterlage - Google Patents
Verfahren zum Aufbringen von nebeneinander liegenden, durch einen engen Zwischenraum voneinander getrennten Metallschichten auf eine UnterlageInfo
- Publication number
- AT259015B AT259015B AT361965A AT361965A AT259015B AT 259015 B AT259015 B AT 259015B AT 361965 A AT361965 A AT 361965A AT 361965 A AT361965 A AT 361965A AT 259015 B AT259015 B AT 259015B
- Authority
- AT
- Austria
- Prior art keywords
- another
- substrate
- separated
- metal layers
- narrow gap
- Prior art date
Links
Classifications
-
- H10W74/47—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H10P50/691—
-
- H10P95/00—
-
- H10W20/40—
-
- H10W72/90—
-
- H10W72/07532—
-
- H10W72/07554—
-
- H10W72/5363—
-
- H10W72/547—
-
- H10W72/5522—
-
- H10W72/59—
-
- H10W72/932—
-
- H10W74/00—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/944—Shadow
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL646404321A NL143070B (nl) | 1964-04-21 | 1964-04-21 | Werkwijze voor het aanbrengen van naast elkaar gelegen, door een tussenruimte van elkaar gescheiden metaaldelen op een ondergrond en voorwerp, in het bijzonder halfgeleiderinrichting, vervaardigd met toepassing van deze werkwijze. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT259015B true AT259015B (de) | 1967-12-27 |
Family
ID=19789874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT361965A AT259015B (de) | 1964-04-21 | 1965-04-20 | Verfahren zum Aufbringen von nebeneinander liegenden, durch einen engen Zwischenraum voneinander getrennten Metallschichten auf eine Unterlage |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3490943A (de) |
| AT (1) | AT259015B (de) |
| BE (1) | BE662830A (de) |
| CH (1) | CH450863A (de) |
| DE (1) | DE1521414C3 (de) |
| DK (1) | DK119782B (de) |
| GB (1) | GB1081472A (de) |
| NL (1) | NL143070B (de) |
| SE (1) | SE323261B (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH476398A (de) * | 1968-03-01 | 1969-07-31 | Ibm | Verfahren zur Herstellung feiner geätzter Muster |
| US3977071A (en) * | 1969-09-29 | 1976-08-31 | Texas Instruments Incorporated | High depth-to-width ratio etching process for monocrystalline germanium semiconductor materials |
| DE2120388A1 (de) * | 1970-04-28 | 1971-12-16 | Agency Ind Science Techn | Verbindungshalbleitervorrichtung |
| US3920861A (en) * | 1972-12-18 | 1975-11-18 | Rca Corp | Method of making a semiconductor device |
| US4111725A (en) * | 1977-05-06 | 1978-09-05 | Bell Telephone Laboratories, Incorporated | Selective lift-off technique for fabricating gaas fets |
| DE2754066A1 (de) * | 1977-12-05 | 1979-06-13 | Siemens Ag | Herstellung einer integrierten schaltung mit abgestuften schichten aus isolations- und elektrodenmaterial |
| DE3028718C2 (de) * | 1979-07-31 | 1982-08-19 | Sharp K.K., Osaka | Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung |
| JPS60103676A (ja) * | 1983-11-11 | 1985-06-07 | Seiko Instr & Electronics Ltd | 薄膜トランジスタアレイの製造方法 |
| US5017459A (en) * | 1989-04-26 | 1991-05-21 | Eastman Kodak Company | Lift-off process |
| US5672282A (en) * | 1996-01-25 | 1997-09-30 | The Whitaker Corporation | Process to preserve silver metal while forming integrated circuits |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB967002A (en) * | 1961-05-05 | 1964-08-19 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| US3303071A (en) * | 1964-10-27 | 1967-02-07 | Bell Telephone Labor Inc | Fabrication of a semiconductive device with closely spaced electrodes |
-
1964
- 1964-04-21 NL NL646404321A patent/NL143070B/xx not_active IP Right Cessation
-
1965
- 1965-04-14 SE SE5001/65A patent/SE323261B/xx unknown
- 1965-04-14 DK DK196265AA patent/DK119782B/da unknown
- 1965-04-15 DE DE1521414A patent/DE1521414C3/de not_active Expired
- 1965-04-15 GB GB16247/65A patent/GB1081472A/en not_active Expired
- 1965-04-16 US US448741A patent/US3490943A/en not_active Expired - Lifetime
- 1965-04-20 CH CH541165A patent/CH450863A/de unknown
- 1965-04-20 AT AT361965A patent/AT259015B/de active
- 1965-04-21 BE BE662830A patent/BE662830A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DK119782B (da) | 1971-02-22 |
| SE323261B (de) | 1970-04-27 |
| NL6404321A (de) | 1965-10-22 |
| NL143070B (nl) | 1974-08-15 |
| US3490943A (en) | 1970-01-20 |
| GB1081472A (en) | 1967-08-31 |
| DE1521414A1 (de) | 1969-10-09 |
| DE1521414C3 (de) | 1975-08-14 |
| CH450863A (de) | 1968-04-30 |
| DE1521414B2 (de) | 1975-01-09 |
| BE662830A (de) | 1965-10-21 |
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