AT259015B - Verfahren zum Aufbringen von nebeneinander liegenden, durch einen engen Zwischenraum voneinander getrennten Metallschichten auf eine Unterlage - Google Patents

Verfahren zum Aufbringen von nebeneinander liegenden, durch einen engen Zwischenraum voneinander getrennten Metallschichten auf eine Unterlage

Info

Publication number
AT259015B
AT259015B AT361965A AT361965A AT259015B AT 259015 B AT259015 B AT 259015B AT 361965 A AT361965 A AT 361965A AT 361965 A AT361965 A AT 361965A AT 259015 B AT259015 B AT 259015B
Authority
AT
Austria
Prior art keywords
another
substrate
separated
metal layers
narrow gap
Prior art date
Application number
AT361965A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT259015B publication Critical patent/AT259015B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/944—Shadow

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
AT361965A 1964-04-21 1965-04-20 Verfahren zum Aufbringen von nebeneinander liegenden, durch einen engen Zwischenraum voneinander getrennten Metallschichten auf eine Unterlage AT259015B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL646404321A NL143070B (nl) 1964-04-21 1964-04-21 Werkwijze voor het aanbrengen van naast elkaar gelegen, door een tussenruimte van elkaar gescheiden metaaldelen op een ondergrond en voorwerp, in het bijzonder halfgeleiderinrichting, vervaardigd met toepassing van deze werkwijze.

Publications (1)

Publication Number Publication Date
AT259015B true AT259015B (de) 1967-12-27

Family

ID=19789874

Family Applications (1)

Application Number Title Priority Date Filing Date
AT361965A AT259015B (de) 1964-04-21 1965-04-20 Verfahren zum Aufbringen von nebeneinander liegenden, durch einen engen Zwischenraum voneinander getrennten Metallschichten auf eine Unterlage

Country Status (9)

Country Link
US (1) US3490943A (de)
AT (1) AT259015B (de)
BE (1) BE662830A (de)
CH (1) CH450863A (de)
DE (1) DE1521414C3 (de)
DK (1) DK119782B (de)
GB (1) GB1081472A (de)
NL (1) NL143070B (de)
SE (1) SE323261B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH476398A (de) * 1968-03-01 1969-07-31 Ibm Verfahren zur Herstellung feiner geätzter Muster
US3977071A (en) * 1969-09-29 1976-08-31 Texas Instruments Incorporated High depth-to-width ratio etching process for monocrystalline germanium semiconductor materials
DE2120388A1 (de) * 1970-04-28 1971-12-16 Agency Ind Science Techn Verbindungshalbleitervorrichtung
US3920861A (en) * 1972-12-18 1975-11-18 Rca Corp Method of making a semiconductor device
US4111725A (en) * 1977-05-06 1978-09-05 Bell Telephone Laboratories, Incorporated Selective lift-off technique for fabricating gaas fets
DE2754066A1 (de) * 1977-12-05 1979-06-13 Siemens Ag Herstellung einer integrierten schaltung mit abgestuften schichten aus isolations- und elektrodenmaterial
DE3028718C2 (de) * 1979-07-31 1982-08-19 Sharp K.K., Osaka Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung
JPS60103676A (ja) * 1983-11-11 1985-06-07 Seiko Instr & Electronics Ltd 薄膜トランジスタアレイの製造方法
US5017459A (en) * 1989-04-26 1991-05-21 Eastman Kodak Company Lift-off process
US5672282A (en) * 1996-01-25 1997-09-30 The Whitaker Corporation Process to preserve silver metal while forming integrated circuits

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB967002A (en) * 1961-05-05 1964-08-19 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3303071A (en) * 1964-10-27 1967-02-07 Bell Telephone Labor Inc Fabrication of a semiconductive device with closely spaced electrodes

Also Published As

Publication number Publication date
BE662830A (de) 1965-10-21
DE1521414B2 (de) 1975-01-09
SE323261B (de) 1970-04-27
CH450863A (de) 1968-04-30
DK119782B (da) 1971-02-22
DE1521414A1 (de) 1969-10-09
DE1521414C3 (de) 1975-08-14
GB1081472A (en) 1967-08-31
NL143070B (nl) 1974-08-15
NL6404321A (de) 1965-10-22
US3490943A (en) 1970-01-20

Similar Documents

Publication Publication Date Title
CH458710A (de) Verfahren zum Beschichten von Substraten
AT282028B (de) Verfahren zum Beschichten eines Metallsubstrats
CH439501A (de) Verfahren zum Kontaktieren von Halbleiteranordnungen
CH468886A (de) Verfahren zum Beschichten von Holzwerkstoffen
CH499628A (de) Verfahren zum Aufwachsen von dünnen, nichtleitenden Schichten
AT285307B (de) Verfahren zum Aromatisieren von Extrakten aus pflanzlichen Stoffen
CH429636A (de) Vorrichtung zum Verformen von metallischen Werkstücken
CH480168A (de) Verfahren zum Verformen von Faserplatten
AT250541B (de) Verfahren zum Überziehen von Gegenständen
AT286238B (de) Verfahren zum Umhüllen von Feststoffteilchen
CH450862A (de) Verfahren zum Aluminisieren von Metallteilen
AT275276B (de) Verfahren zum Schweißen von dünnen Metallblechen
AT255225B (de) Verfahren und Einrichtung zum Vakuumüberziehen von Gegenständen durch Kathodenzerstäubung
CH450863A (de) Verfahren zum Aufbringen von nebeneinander liegenden, durch einen Zwischenraum voneinander getrennten Metallschichten auf eine Unterlage und nach diesem Verfahren auf einer Unterlage hergestellte Metallschichten
AT268830B (de) Verfahren zum Schneidbrennen von Metall
AT293139B (de) Verfahren zum Entzundern von Metallen
CH433002A (de) Verfahren zum Aufbringen von Wachs-Polymerisat-Filmen auf Schichtträger
CH441062A (de) Verfahren zum Beschichten von Oberflächen in einer Corona-Entladung
CH453687A (de) Verfahren zum Härten von Polyepoxyden
CH418770A (de) Verfahren zum Aufbringen dünner Schichten durch thermisches Verdampfen
CH430896A (de) Verfahren zum Behandeln von Partikeln
CH443197A (de) Vorrichtung zum Umformen von metallischen Werkstücken
CH484198A (de) Verfahren zum Reduzieren von substituierten Silanen
AT290245B (de) Verfahren zum Beizen von Bunden
AT266220B (de) Verfahren zum Herstellen von Halbleiterbauelementen auf magnetischer Unterlage