CH499628A - Verfahren zum Aufwachsen von dünnen, nichtleitenden Schichten - Google Patents

Verfahren zum Aufwachsen von dünnen, nichtleitenden Schichten

Info

Publication number
CH499628A
CH499628A CH1376868A CH1376868A CH499628A CH 499628 A CH499628 A CH 499628A CH 1376868 A CH1376868 A CH 1376868A CH 1376868 A CH1376868 A CH 1376868A CH 499628 A CH499628 A CH 499628A
Authority
CH
Switzerland
Prior art keywords
conductive layers
growing thin
growing
thin
conductive
Prior art date
Application number
CH1376868A
Other languages
English (en)
Inventor
Skinner Logan Joseph
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH499628A publication Critical patent/CH499628A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CH1376868A 1967-09-15 1968-09-13 Verfahren zum Aufwachsen von dünnen, nichtleitenden Schichten CH499628A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66811467A 1967-09-15 1967-09-15

Publications (1)

Publication Number Publication Date
CH499628A true CH499628A (de) 1970-11-30

Family

ID=24681074

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1376868A CH499628A (de) 1967-09-15 1968-09-13 Verfahren zum Aufwachsen von dünnen, nichtleitenden Schichten

Country Status (7)

Country Link
US (1) US3617459A (de)
CH (1) CH499628A (de)
DE (1) DE1790094B1 (de)
FR (1) FR1586445A (de)
GB (1) GB1181560A (de)
NL (1) NL163367C (de)
SE (1) SE359719B (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767551A (en) * 1971-11-01 1973-10-23 Varian Associates Radio frequency sputter apparatus and method
US3860507A (en) * 1972-11-29 1975-01-14 Rca Corp Rf sputtering apparatus and method
GB1485266A (en) * 1973-11-20 1977-09-08 Atomic Energy Authority Uk Storage of material
US4131533A (en) * 1977-12-30 1978-12-26 International Business Machines Corporation RF sputtering apparatus having floating anode shield
US4268374A (en) * 1979-08-09 1981-05-19 Bell Telephone Laboratories, Incorporated High capacity sputter-etching apparatus
US4333814A (en) * 1979-12-26 1982-06-08 Western Electric Company, Inc. Methods and apparatus for improving an RF excited reactive gas plasma
US4693805A (en) * 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
US4818359A (en) * 1986-08-27 1989-04-04 International Business Machines Corporation Low contamination RF sputter deposition apparatus
JPS6358834A (ja) * 1986-08-27 1988-03-14 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション スパッタリング装置
US4802968A (en) * 1988-01-29 1989-02-07 International Business Machines Corporation RF plasma processing apparatus
DE3821207A1 (de) * 1988-06-23 1989-12-28 Leybold Ag Anordnung zum beschichten eines substrats mit dielektrika
US5946013A (en) * 1992-12-22 1999-08-31 Canon Kabushiki Kaisha Ink jet head having a protective layer with a controlled argon content
DE4301189C2 (de) * 1993-01-19 2000-12-14 Leybold Ag Vorrichtung zum Beschichten von Substraten
DE4301188C2 (de) * 1993-01-19 2001-05-31 Leybold Ag Vorrichtung zum Beschichten oder Ätzen von Substraten
US5849372A (en) * 1993-09-17 1998-12-15 Isis Innovation Limited RF plasma reactor and methods of generating RF plasma
WO1996034124A1 (en) * 1995-04-25 1996-10-31 The Boc Group, Inc. Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
EP0774772A1 (de) * 1995-11-17 1997-05-21 Applied Materials, Inc. Verfahren zum physikalischen Ätzen von elektrisch leitenden Siliziumoberflächen
US6095084A (en) * 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US6478924B1 (en) 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes
US6730609B2 (en) * 2001-10-09 2004-05-04 Micron Technology, Inc. Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device
US6843880B2 (en) * 2002-05-24 2005-01-18 International Business Machines Corporation Enhanced endpoint detection for wet etch process control
US7767056B2 (en) * 2003-01-14 2010-08-03 Canon Anelva Corporation High-frequency plasma processing apparatus
JP4326895B2 (ja) * 2003-09-25 2009-09-09 キヤノンアネルバ株式会社 スパッタリング装置
US8052799B2 (en) * 2006-10-12 2011-11-08 International Business Machines Corporation By-product collecting processes for cleaning processes
JP4317888B2 (ja) * 2007-08-31 2009-08-19 富士フイルム株式会社 スパッタ方法およびスパッタ装置
US8540851B2 (en) * 2009-02-19 2013-09-24 Fujifilm Corporation Physical vapor deposition with impedance matching network
US8557088B2 (en) * 2009-02-19 2013-10-15 Fujifilm Corporation Physical vapor deposition with phase shift
US8182662B2 (en) * 2009-03-27 2012-05-22 Sputtering Components, Inc. Rotary cathode for magnetron sputtering apparatus
JP5596402B2 (ja) * 2010-04-19 2014-09-24 株式会社日立ハイテクノロジーズ 分析装置、イオン化装置及び分析方法
US10964590B2 (en) * 2017-11-15 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Contact metallization process
US10790466B2 (en) * 2018-12-11 2020-09-29 Feng-wen Yen In-line system for mass production of organic optoelectronic device and manufacturing method using the same system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL136984C (de) * 1964-06-04
US3451917A (en) * 1966-01-10 1969-06-24 Bendix Corp Radio frequency sputtering apparatus
US3461054A (en) * 1966-03-24 1969-08-12 Bell Telephone Labor Inc Cathodic sputtering from a cathodically biased target electrode having an rf potential superimposed on the cathodic bias

Also Published As

Publication number Publication date
NL163367C (nl) 1980-08-15
DE1790094B1 (de) 1972-02-03
GB1181560A (en) 1970-02-18
SE359719B (de) 1973-09-03
FR1586445A (de) 1970-02-20
NL163367B (nl) 1980-03-17
US3617459A (en) 1971-11-02
NL6812114A (de) 1969-03-18

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