AR210970A1 - Metrdo de fabricacion de un cuerpo semiconductor y dipositivo del metodo - Google Patents

Metrdo de fabricacion de un cuerpo semiconductor y dipositivo del metodo

Info

Publication number
AR210970A1
AR210970A1 AR268509A AR26850977A AR210970A1 AR 210970 A1 AR210970 A1 AR 210970A1 AR 268509 A AR268509 A AR 268509A AR 26850977 A AR26850977 A AR 26850977A AR 210970 A1 AR210970 A1 AR 210970A1
Authority
AR
Argentina
Prior art keywords
dipositive
manufacturing
semiconductor body
semiconductor
Prior art date
Application number
AR268509A
Other languages
English (en)
Spanish (es)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AR210970A1 publication Critical patent/AR210970A1/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
AR268509A 1976-08-30 1977-07-20 Metrdo de fabricacion de un cuerpo semiconductor y dipositivo del metodo AR210970A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7609607A NL7609607A (nl) 1976-08-30 1976-08-30 Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.

Publications (1)

Publication Number Publication Date
AR210970A1 true AR210970A1 (es) 1977-09-30

Family

ID=19826814

Family Applications (1)

Application Number Title Priority Date Filing Date
AR268509A AR210970A1 (es) 1976-08-30 1977-07-20 Metrdo de fabricacion de un cuerpo semiconductor y dipositivo del metodo

Country Status (12)

Country Link
US (1) US4137107A (Direct)
JP (1) JPS5329666A (Direct)
AR (1) AR210970A1 (Direct)
AU (1) AU504549B2 (Direct)
BR (1) BR7705750A (Direct)
CA (1) CA1090458A (Direct)
DE (1) DE2737150A1 (Direct)
FR (1) FR2363201A1 (Direct)
GB (1) GB1530085A (Direct)
IT (1) IT1086123B (Direct)
NL (1) NL7609607A (Direct)
SE (1) SE7709678L (Direct)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7712315A (nl) * 1977-11-09 1979-05-11 Philips Nv Werkwijze voor het epitaxiaal neerslaan van verscheidene lagen.
JPS5563887A (en) * 1978-11-06 1980-05-14 Nec Corp Light-emitting diode
NL7903197A (nl) * 1979-04-24 1980-10-28 Philips Nv Werkwijze voor het vervaardigen van een elektrolumines- cerende halfgeleiderinrichting en elektroluminescerende halfgeleiderinrichting vervaardigd volgens de werkwijze
US4233090A (en) * 1979-06-28 1980-11-11 Rca Corporation Method of making a laser diode
GB2070859B (en) * 1980-02-07 1984-03-21 Stanley Electric Co Ltd Hetero-junction light-emitting diode
US4439910A (en) * 1980-09-29 1984-04-03 Hughes Aircraft Company Process for fabrication of monolithic transistor coupled electroluminescent diode
US4578127A (en) * 1982-08-13 1986-03-25 At&T Bell Laboratories Method of making an improved group III-V semiconductor device utilizing a getter-smoothing layer
US4566171A (en) * 1983-06-20 1986-01-28 At&T Bell Laboratories Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices
US4661961A (en) * 1983-06-20 1987-04-28 American Telephone And Telegraph Company, At&T Bell Laboratories Buried heterostructure devices with unique contact-facilitating layers
JPS61107758A (ja) * 1984-10-31 1986-05-26 Fujitsu Ltd ＧａＡｓ集積回路及びその製造方法
US4788159A (en) * 1986-09-18 1988-11-29 Eastman Kodak Company Process for forming a positive index waveguide
US4818722A (en) * 1986-09-29 1989-04-04 Siemens Aktiengesellschaft Method for generating a strip waveguide
EP0287793A3 (en) * 1987-04-23 1991-03-06 International Business Machines Corporation Integrated circuit substrate product
US4897361A (en) * 1987-12-14 1990-01-30 American Telephone & Telegraph Company, At&T Bell Laboratories Patterning method in the manufacture of miniaturized devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT963303B (it) * 1971-07-29 1974-01-10 Licentia Gmbh Laser a semiconduttore
US3824493A (en) * 1972-09-05 1974-07-16 Bell Telephone Labor Inc Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror
US3833435A (en) * 1972-09-25 1974-09-03 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US3893044A (en) * 1973-04-12 1975-07-01 Ibm Laser device having enclosed laser cavity
JPS5248066B2 (Direct) * 1974-03-04 1977-12-07
US3915765A (en) * 1973-06-25 1975-10-28 Bell Telephone Labor Inc MBE technique for fabricating semiconductor devices having low series resistance
JPS5751276B2 (Direct) * 1973-10-23 1982-11-01
CA1049127A (en) * 1974-03-05 1979-02-20 Kunio Itoh Semiconductor devices with improved heat radiation and current concentration
US3938172A (en) * 1974-05-22 1976-02-10 Rca Corporation Semiconductor injection laser
US3936855A (en) * 1974-08-08 1976-02-03 International Telephone And Telegraph Corporation Light-emitting diode fabrication process
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers

Also Published As

Publication number Publication date
FR2363201B1 (Direct) 1983-02-04
GB1530085A (en) 1978-10-25
JPS567290B2 (Direct) 1981-02-17
DE2737150A1 (de) 1978-03-09
US4137107A (en) 1979-01-30
AU504549B2 (en) 1979-10-18
NL7609607A (nl) 1978-03-02
SE7709678L (sv) 1978-03-01
JPS5329666A (en) 1978-03-20
DE2737150C2 (Direct) 1989-10-12
CA1090458A (en) 1980-11-25
BR7705750A (pt) 1978-07-04
AU2831577A (en) 1979-03-08
FR2363201A1 (fr) 1978-03-24
IT1086123B (it) 1985-05-28

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