JP2013166812A - ケイ素含有表面改質剤、これを含むレジスト下層膜形成用組成物、及びパターン形成方法 - Google Patents
ケイ素含有表面改質剤、これを含むレジスト下層膜形成用組成物、及びパターン形成方法 Download PDFInfo
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- JP2013166812A JP2013166812A JP2012029230A JP2012029230A JP2013166812A JP 2013166812 A JP2013166812 A JP 2013166812A JP 2012029230 A JP2012029230 A JP 2012029230A JP 2012029230 A JP2012029230 A JP 2012029230A JP 2013166812 A JP2013166812 A JP 2013166812A
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- silicon
- film
- pattern
- underlayer film
- organic
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 151
- 239000010703 silicon Substances 0.000 title claims abstract description 151
- 239000003607 modifier Substances 0.000 title claims abstract description 55
- 239000000203 mixture Substances 0.000 title claims description 120
- 238000000034 method Methods 0.000 title claims description 71
- 230000007261 regionalization Effects 0.000 title claims description 7
- 230000015572 biosynthetic process Effects 0.000 title description 21
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- 239000000178 monomer Substances 0.000 claims description 66
- 239000003960 organic solvent Substances 0.000 claims description 61
- 239000002904 solvent Substances 0.000 claims description 41
- 150000001875 compounds Chemical class 0.000 claims description 35
- -1 polysiloxane Polymers 0.000 claims description 33
- 238000001312 dry etching Methods 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 26
- 229920001296 polysiloxane Polymers 0.000 claims description 23
- 229910052733 gallium Inorganic materials 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 19
- 125000000962 organic group Chemical group 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- 238000009835 boiling Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
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- 125000004432 carbon atom Chemical group C* 0.000 claims description 11
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 238000012546 transfer Methods 0.000 claims description 7
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
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Abstract
Description
沸点が180度以上の高沸点溶剤を含有することにより、上層レジストパターンとの密着性が良好なレジスト下層膜を形成することができる。
従来、ポジ型フォトレジストでは、露光前のフォトレジスト膜の膜質と露光後のアルカリ現像で形成されたパターン(以後、ポジ型パターンと呼ぶ)の膜質は同じ膜質である。そこで、ポジ型パターンとレジスト下層膜との密着性を向上させるために、フォトレジストとレジスト下層膜の純水に対する接触角(以後、接触角と呼ぶ)を近似させることで、ポジ型パターンとレジスト下層膜との密着性向上やラフネスの低減に効果があった。
(上記式中、Pは水素原子、ヒドロキシル基、
(合成方法1:酸触媒)
本発明のケイ素含有表面改質剤は、例えば上述の加水分解性モノマー1種又は2種以上の混合物を、酸触媒の存在下、加水分解縮合を行うことで製造することができる。
また、ケイ素含有表面改質剤は、例えば上述の加水分解性モノマー1種又は2種以上の混合物を、アルカリ触媒の存在下、加水分解縮合を行うことで製造することもできる。
ケイ素含有表面改質剤の配合量は、ベースポリマーであるポリシロキサン化合物100に対して、質量比で0.01〜50、好ましくは0.1〜10である。
U(OR7)m7(OR8)m8 (2)
(式中、R7、R8は炭素数1〜30の有機基であり、m7+m8はUの種類により決まる価数と同数であり、m7、m8は0以上の整数、Uは周期律表のIII族、IV族、又はV族の元素で炭素及びケイ素を除くものである。)
(熱架橋促進剤)
本発明においては、熱架橋促進剤をケイ素含有レジスト下層膜形成用組成物に配合してもよい。配合可能な熱架橋促進剤として、下記一般式(3)又は(4)で示される化合物を挙げることができる。具体的には、特許文献6に記載されている材料を添加することができる。
LaHbX (3)
(式中、Lはリチウム、ナトリウム、カリウム、ルビジウム、及びセシウムのいずれか、Xは水酸基、又は炭素数1〜30の1価又は2価以上の有機酸基であり、aは1以上の整数、bは0又は1以上の整数で、a+bは水酸基又は有機酸基の価数である。)
MY (4)
(式中、Mはスルホニウム、ヨードニウム、及びアンモニウムのいずれかであり、Yは非求核性対向イオンである。)
本発明のケイ素含有レジスト下層膜形成用組成物の安定性を向上させるため、炭素数が1〜30の1価又は2価以上の有機酸を添加することが好ましい。このとき添加する酸としては、ギ酸、酢酸、プロピオン酸、ブタン酸、ペンタン酸、ヘキサン酸、ヘプタン酸、オクタン酸、ノナン酸、デカン酸、オレイン酸、ステアリン酸、リノール酸、リノレン酸、安息香酸、フタル酸、イソフタル酸、テレフタル酸、サリチル酸、トリフルオロ酢酸、モノクロロ酢酸、ジクロロ酢酸、トリクロロ酢酸、シュウ酸、マロン酸、メチルマロン酸、エチルマロン酸、プロピルマロン酸、ブチルマロン酸、ジメチルマロン酸、ジエチルマロン酸、コハク酸、メチルコハク酸、グルタル酸、アジピン酸、イタコン酸、マレイン酸、フマル酸、シトラコン酸、クエン酸等を例示することができる。特にシュウ酸、マレイン酸、ギ酸、酢酸、プロピオン酸、クエン酸等が好ましい。また、安定性を保つため、2種以上の酸を混合して使用してもよい。添加量は組成物に含まれるケイ素100質量部に対して0.001〜25質量部、好ましくは0.01〜15質量部、より好ましくは0.1〜5質量部である。
本発明では組成物に水を添加してもよい。水を添加すると、組成物中のポリシロキサン化合物が水和されるため、リソグラフィー性能が向上する。組成物の溶剤成分における水の含有率は0質量%を超え50質量%未満であり、特に好ましくは0.3〜30質量%、更に好ましくは0.5〜20質量%である。それぞれの成分は、添加量が多すぎると、ケイ素含有レジスト下層膜の均一性が悪くなり、最悪の場合はじきが発生してしまう恐れがある。一方、添加量が少ないとリソグラフィー性能が低下する恐れがある。
本発明では組成物に光酸発生剤を添加してもよい。本発明で使用される光酸発生剤として、具体的には、特開2009−126940号公報(0160)〜(0179)段落に記載されている材料を添加することができる。
更に、本発明では組成物に安定剤を添加することができる。安定剤として環状エーテルを置換基として有する1価又は2価以上のアルコールを添加することができる。特に特開2009−126940号公報(0181)〜(0182)段落に記載されている安定剤を添加するとケイ素含有レジスト下層膜形成用組成物の安定性を向上させることができる。
更に、本発明では必要に応じて組成物に界面活性剤を配合することが可能である。このようなものとして、具体的には、特開2009−126940号公報(0185)段落に記載されている材料を添加することができる。
更に、本発明では必要に応じて組成物に沸点が180度以上の高沸点溶剤を添加する事も可能である。この高沸点溶剤としては、1−オクタノール、2−エチルヘキサノール、1−ノナノール、1−デカノール、1−ウンデカール、エチレングリコール、1,2−プロピレングリコール、1,3−ブチレングリコール、2,4−ペンタンジオール、2−メチル−2,4−ペンタンジオール、2,5−ヘキサンジオール、2,4−ヘプタンジオール、2−エチル−1,3−ヘキサンジオール、ジエチレングリコール、ジプロピレングリコール、トリエチレングリコール、トリプロピレングリコール、グリセリン、酢酸n−ノニル、酢酸エチレングリコールモノエチルエーテル、1,2−ジアセトキシエタン、1−アセトキシ−2−メトキシエタン、1,2−ジアセトキシプロパン、酢酸ジエチレングリコールモノメチルエーテル、酢酸ジエチレングリコールモノエチルエーテル、酢酸ジエチレングリコールモノ−n−ブチルエーテル、酢酸プロピレングリコールモノメチルエーテル、酢酸プロピレングリコールモノプロピルエーテル、酢酸プロピレングリコールモノブチルエーテル、酢酸ジプロピレングリコールモノメチルエーテル、酢酸ジプロピレングリコールモノエチルエーテル等を例示できる。
(ネガ型パターン形成方法1)
本発明では、被加工体上に塗布型有機下層膜材料を用いて有機下層膜を形成し、該有機下層膜の上に前記ケイ素含有レジスト下層膜形成用組成物を用いてケイ素含有レジスト下層膜を形成し、該ケイ素含有レジスト下層膜上に化学増幅型レジスト組成物を用いてフォトレジスト膜を形成し、加熱処理後に高エネルギー線で前記フォトレジスト膜を露光し、有機溶剤の現像液を用いて前記フォトレジスト膜の未露光部を溶解させることによりネガ型パターンを形成し、該ネガ型パターンが形成されたフォトレジスト膜をマスクにして前記ケイ素含有レジスト下層膜にドライエッチングでパターン転写し、該パターンが転写されたケイ素含有レジスト下層膜をマスクにして前記有機下層膜をドライエッチングでパターン転写し、さらに該パターンが転写された有機下層膜をマスクにして前記被加工体にドライエッチングでパターンを転写することを特徴とするパターン形成方法を提供する(所謂「多層レジスト法」)。
また、本発明では、被加工体上に炭素を主成分とする有機ハードマスクをCVD法で形成し、該有機ハードマスクの上に前記ケイ素含有レジスト下層膜形成用組成物を用いてケイ素含有レジスト下層膜を形成し、該ケイ素含有レジスト下層膜上に化学増幅型レジスト組成物を用いてフォトレジスト膜を形成し、加熱処理後に高エネルギー線で前記フォトレジスト膜を露光し、有機溶剤の現像液を用いて前記フォトレジスト膜の未露光部を溶解させることによりネガ型パターンを形成し、該ネガ型パターンが形成されたフォトレジスト膜をマスクにして前記ケイ素含有レジスト下層膜にドライエッチングでパターン転写し、該パターンが転写されたケイ素含有レジスト下層膜をマスクにして前記有機ハードマスクをドライエッチングでパターン転写し、さらに該パターンが転写された前記有機ハードマスクをマスクにして被加工体にドライエッチングでパターンを転写することを特徴とするパターン形成方法を提供する。
以上のような3層レジスト法による本発明のネガ型パターン形成方法は次の通りである(図1参照)。このプロセスにおいては、まず被加工体1上に有機下層膜2をスピンコートで作製する(図1(I−A))。この有機下層膜2は、被加工体1をエッチングするときのマスクとして作用するので、エッチング耐性が高いことが望ましく、上層のケイ素含有レジスト下層膜とミキシングしないことが求められるため、スピンコートで形成した後に熱あるいは酸によって架橋することが望ましい。
[合成例1−1]
メタノール200g、メタンスルホン酸0.1g及び脱イオン水60gの混合物にモノマー101 47.7g及びモノマー120 43.0gの混合物を添加し、12時間、40℃に保持し、加水分解縮合させた。反応終了後、プロピレングリコールエチルエーテル(PGEE)200gを加え、副生アルコールを減圧で留去した。そこに、酢酸エチル1000ml及びPGEE100gを加え、水層を分液した。残った有機層に、イオン交換水100mlを加えて撹拌、静置、分液した。これを3回繰り返した。残った有機層を減圧で濃縮してケイ素含有化合物1−1のPGEE溶液200g(化合物濃度20%)を得た。このもののポリスチレン換算分子量を測定したところMw=2,100であった。また、1H−NMRで保護基であるエトキシエチル基がすべて外れていることが判明した。
エタノール400g、25%水酸化テトラメチルアンモニウム60g及び脱イオン水140gの混合物にモノマー101 47.7g及びモノマー121 42.7gの混合物を添加し、4時間、40℃に保持し、加水分解縮合させた。反応終了後、酢酸20gを加えて中和し、副生アルコールを減圧で留去した。そこに、酢酸エチル1200ml及びPGEE350gを加え、水層を分液した。残った有機層に、イオン交換水100mlを加えて撹拌、静置、分液した。これを3回繰り返した。残った有機層を減圧で濃縮してケイ素含有化合物1−2のPGEE溶液280g(化合物濃度20%)を得た。このもののポリスチレン換算分子量を測定したところMw=2,600であった。また、1H−NMRで保護基であるアセチル基がすべて外れていることが判明した。
[合成例2−1]
メタノール120g、70%硝酸0.1g及び脱イオン水60gの混合物にモノマー100 5.0g、モノマー101 3.4g、及びモノマー102 68.5gの混合物を添加し、12時間、40℃に保持し、加水分解縮合させた。反応終了後、PGEE300gを加え、副生アルコール及び過剰の水を減圧で留去して、ポリシロキサン化合物2−1のPGEE溶液320g(ポリマー濃度10%)を得た。このもののポリスチレン換算分子量を測定したところMw=2,300であった。
上記合成例で得られたケイ素含有表面改質剤(1−1)〜(1−13)、ポリマー成分としてのポリシロキサン化合物(2−1)〜(2−8)、酸、熱架橋促進剤、溶剤、添加剤を表4−1、4−2に示す割合で混合し、0.1μmのフッ素樹脂製のフィルターで濾過することによって、ケイ素含有膜形成用組成物溶液をそれぞれ調製し、それぞれSol.1〜30とした。
TPSHCO3 :炭酸モノ(トリフェニルスルホニウム)
TPSOx :シュウ酸モノ(トリフェニルスルホニウム)
TPSTFA :トリフルオロ酢酸トリフェニルスルホニウム
TPSOCOPh :安息香酸トリフェニルスルホニウム
TPSH2PO4 :リン酸モノ(トリフェニルスルホニウム)
TPSMA :マレイン酸モノ(トリフェニルスルホニウム)
TPSNf :ノナフルオロブタンスルホン酸トリフェニルスルホニウム
QMAMA :マレイン酸モノ(テトラメチルアンモニウム)
QMATFA :トリフルオロ酢酸テトラメチルアンモニウム
QBANO3 :硝酸テトラブチルアンモニウム
Ph2ICl :塩化ジフェニルヨードニウム
PGEE :プロピレングリコールエチルエーテル
GBL :ガンマブチルラクトン
<下層膜だけの接触角サンプル>
シリコンウエハー上に、ケイ素含有レジスト下層膜形成用組成物Sol.1〜30を塗布して240℃で60秒間加熱して、膜厚35nmのケイ素含有膜Film1〜30を作製し、純水との接触角(CA1)を測定した(表5)。
シリコンウエハー上に、ケイ素含有レジスト下層膜形成用組成物Sol.1〜30を塗布して240℃で60秒間加熱して、膜厚35nmのケイ素含有膜Film1〜30を作製した。その上に表10記載のネガ現像用ArFレジスト溶液(PR−1)を塗布し、100℃で60秒間ベークして膜厚100nmのフォトレジスト層を形成した。更にフォトレジスト膜上に表8記載の液浸保護膜(TC−1)を塗布し90℃で60秒間ベークし膜厚50nmの保護膜を形成した。次いで、ArF液浸露光装置((株)ニコン製;NSR−S610Cで全面露光し、100℃で60秒間ベーク(PEB)し、30rpmで回転させながら現像ノズルから現像液として酢酸ブチルを3秒間吐出し、その後回転を止めてパドル現像を27秒間行い、ジイソアミルエーテルでリンス後スピンドライし、100℃で20秒間ベークしてリンス溶剤を蒸発させた。残ったレジスト膜を全てPGMEでリンス除去した後、ケイ素含有膜の露光部の膜を得た。これらについて、純水との接触角を測定したところ、CA1と同じ値であることが確認された。
シリコンウエハー上に、表7記載のネガ現像用ArFレジスト溶液(PR−1、PR−2)を塗布し、100℃で60秒間ベークして膜厚100nmのフォトレジスト膜を作製し、純水との接触角を測定した。次いで、同じレジスト膜をArF露光装置((株)ニコン製;NSR−S610C)で全面露光し、100℃で60秒間ベーク(PEB)して、ジイソアミルエーテルでリンス後スピンドライし、100℃で20秒間ベークしてリンス溶剤を蒸発させて、酸脱離基が外れたネガ現像時のパターン部分に相当するArFレジスト膜を作製し、純水との接触角を測定した(表6)。
シリコンウエハー上に、信越化学工業(株)製スピンオンカーボン膜ODL−50(カーボン含有量80質量%)を膜厚200nmで形成した。その上にケイ素含有レジスト下層膜形成用組成物Sol.11〜30を塗布して240℃で60秒間加熱して、膜厚35nmのケイ素含有レジスト下層膜Film11〜30を作製した。
一方、本発明のケイ素含有表面改質剤を含まない比較例1−1のネガ現像では、接触角の差が大きくパターンの倒れが発生した。
上記の実施例1で示された現像液(酢酸ブチル)の代わりに、以下に示した現像液を用いて実施例1と同様手順で、43nm 1:1のネガ型のラインアンドスペースパターンを得た(表10)。
上記、ネガ型現像によるパターニング試験で作製したネガ型現像によるレジストパターンをマスクにしてケイ素含有膜の加工を条件(1)でドライエッチングし、次いで条件(2)でドライエッチングしスピンオンカーボン膜にパターンを転写した。得られたパターンの断面形状を(株)日立製作所製電子顕微鏡(S−9380)で、パターンラフネスを(株)日立ハイテクノロジーズ製電子顕微鏡(CG4000)でそれぞれ形状を比較し表11にまとめた。
装置:東京エレクトロン(株)製ドライエッチング装置Telius SP
エッチング条件(1):
チャンバー圧力 15Pa
Upper/Lower RFパワー 500W/300W
CHF3ガス流量 50ml/min
CF4ガス流量 150ml/min
Arガス流量 100ml/min
処理時間 40sec
装置:東京エレクトロン(株)製ドライエッチング装置Telius SP
エッチング条件(2):
チャンバー圧力 5Pa
Upper/Lower RFパワー 1000W/300W
O2ガス流量 300ml/min
N2ガス流量 100ml/min
Arガス流量 100ml/min
処理時間 30sec
2a…ネガ型有機下層膜パターン、 3…ケイ素含有レジスト下層膜、
3a…ネガ型ケイ素含有レジスト下層膜パターン、 4…フォトレジスト膜、
4a…ネガ型レジストパターン。
更に、本発明では必要に応じて組成物に沸点が180度以上の高沸点溶剤を添加する事も可能である。この高沸点溶剤としては、1−オクタノール、2−エチルヘキサノール、1−ノナノール、1−デカノール、1−ウンデカノール、エチレングリコール、1,2−プロピレングリコール、1,3−ブチレングリコール、2,4−ペンタンジオール、2−メチル−2,4−ペンタンジオール、2,5−ヘキサンジオール、2,4−ヘプタンジオール、2−エチル−1,3−ヘキサンジオール、ジエチレングリコール、ジプロピレングリコール、トリエチレングリコール、トリプロピレングリコール、グリセリン、酢酸n−ノニル、酢酸エチレングリコールモノエチルエーテル、1,2−ジアセトキシエタン、1−アセトキシ−2−メトキシエタン、1,2−ジアセトキシプロパン、酢酸ジエチレングリコールモノメチルエーテル、酢酸ジエチレングリコールモノエチルエーテル、酢酸ジエチレングリコールモノ−n−ブチルエーテル、酢酸プロピレングリコールモノメチルエーテル、酢酸プロピレングリコールモノプロピルエーテル、酢酸プロピレングリコールモノブチルエーテル、酢酸ジプロピレングリコールモノメチルエーテル、酢酸ジプロピレングリコールモノエチルエーテル等を例示できる。
シリコンウエハー上に、ケイ素含有レジスト下層膜形成用組成物Sol.1〜30を塗布して240℃で60秒間加熱して、膜厚35nmのケイ素含有膜Film1〜30を作製した。その上に表7記載のネガ現像用ArFレジスト溶液(PR−1)を塗布し、100℃で60秒間ベークして膜厚100nmのフォトレジスト層を形成した。更にフォトレジスト膜上に表8記載の液浸保護膜(TC−1)を塗布し90℃で60秒間ベークし膜厚50nmの保護膜を形成した。次いで、ArF液浸露光装置((株)ニコン製;NSR−S610Cで全面露光し、100℃で60秒間ベーク(PEB)し、30rpmで回転させながら現像ノズルから現像液として酢酸ブチルを3秒間吐出し、その後回転を止めてパドル現像を27秒間行い、ジイソアミルエーテルでリンス後スピンドライし、100℃で20秒間ベークしてリンス溶剤を蒸発させた。残ったレジスト膜を全てPGMEでリンス除去した後、ケイ素含有膜の露光部の膜を得た。これらについて、純水との接触角を測定したところ、CA1と同じ値であることが確認された。
Claims (9)
- 請求項1又は2に記載のケイ素含有表面改質剤とポリシロキサン化合物を含有することを特徴とするケイ素含有レジスト下層膜形成用組成物。
- 前記ポリシロキサン化合物中の成分として4官能加水分解性モノマー由来成分がポリシロキサン中70モル%以上であることを特徴とする請求項3に記載のケイ素含有レジスト下層膜形成用組成物。
- 沸点が180度以上の溶媒を含有することを特徴とする請求項3又は4に記載のケイ素含有レジスト下層膜形成用組成物。
- 被加工体上に塗布型有機下層膜材料を用いて有機下層膜を形成し、該有機下層膜の上に請求項3〜5のいずれか1項に記載のケイ素含有レジスト下層膜形成用組成物を用いてケイ素含有レジスト下層膜を形成し、該ケイ素含有レジスト下層膜上に化学増幅型レジスト組成物を用いてフォトレジスト膜を形成し、加熱処理後に高エネルギー線で前記フォトレジスト膜を露光し、有機溶剤の現像液を用いて前記フォトレジスト膜の未露光部を溶解させることによりネガ型パターンを形成し、該パターンが形成されたフォトレジスト膜をマスクにして前記ケイ素含有ケイ素含有レジスト下層膜にドライエッチングでパターン転写し、該パターンが転写されたケイ素含有レジスト下層膜をマスクにして前記有機下層膜をドライエッチングでパターン転写し、さらに該パターンが転写された有機下層膜をマスクにして前記被加工体にドライエッチングでパターンを転写することを特徴とするパターン形成方法。
- 被加工体上に炭素を主成分とする有機ハードマスクをCVD法で形成し、該有機ハードマスクの上に請求項3〜5のいずれか1項に記載のケイ素含有レジスト下層膜形成用組成物を用いてケイ素含有レジスト下層膜を形成し、該ケイ素含有レジスト下層膜上に化学増幅型レジスト組成物を用いてフォトレジスト膜を形成し、加熱処理後に高エネルギー線で前記フォトレジスト膜を露光し、有機溶剤の現像液を用いて前記フォトレジスト膜の未露光部を溶解させることによりネガ型パターンを形成し、該パターンが形成されたフォトレジスト膜をマスクにして前記ケイ素含有レジスト下層膜にドライエッチングでパターン転写し、該パターンが転写されたケイ素含有レジスト下層膜をマスクにして前記有機ハードマスクをドライエッチングでパターン転写し、さらに該パターンが転写された有機ハードマスクをマスクにして前記被加工体にドライエッチングでパターンを転写することを特徴とするパターン形成方法。
- 被加工体として、半導体装置基板、あるいは該半導体装置基板に金属膜、合金膜、金属炭化膜、金属酸化膜、金属窒化膜、金属酸化炭化膜、及び金属酸化窒化膜のいずれかが成膜されたものを用いることを特徴とする請求項6又は7に記載のパターン形成方法。
- 前記被加工体を構成する金属がケイ素、ガリウム、チタン、タングステン、ハフニウム、ジルコニウム、クロム、ゲルマニウム、銅、アルミニウム、及び鉄のいずれか、あるいはこれらの合金であることを特徴とする請求項8に記載のパターン形成方法。
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002083809A (ja) * | 2000-09-06 | 2002-03-22 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2004198906A (ja) * | 2002-12-20 | 2004-07-15 | Sumitomo Chem Co Ltd | 感光性組成物 |
JP2005018054A (ja) * | 2003-06-03 | 2005-01-20 | Shin Etsu Chem Co Ltd | 反射防止膜材料、これを用いた反射防止膜及びパターン形成方法 |
JP2008019423A (ja) * | 2006-06-16 | 2008-01-31 | Shin Etsu Chem Co Ltd | ケイ素含有膜形成用組成物、ケイ素含有膜、ケイ素含有膜形成基板及びこれを用いたパターン形成方法 |
JP2009128564A (ja) * | 2007-11-22 | 2009-06-11 | Nissan Chem Ind Ltd | レジスト下層膜形成組成物及び半導体装置の製造方法 |
WO2010140551A1 (ja) * | 2009-06-02 | 2010-12-09 | 日産化学工業株式会社 | スルフィド結合を有するシリコン含有レジスト下層膜形成組成物 |
WO2011105368A1 (ja) * | 2010-02-25 | 2011-09-01 | 日産化学工業株式会社 | アミック酸を含むシリコン含有レジスト下層膜形成組成物 |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4510136A (en) | 1981-06-24 | 1985-04-09 | E. I. Du Pont De Nemours And Company | Fungicidal 1,2,4-triazole derivatives |
US4902603A (en) | 1987-10-05 | 1990-02-20 | Olin Corporation | Photoresist compositions containing selected 6-acetoxy cyclohexadienone photosensitizers and novolak resins |
US5178989A (en) | 1989-07-21 | 1993-01-12 | Board Of Regents, The University Of Texas System | Pattern forming and transferring processes |
JPH07181688A (ja) | 1993-12-24 | 1995-07-21 | Sony Corp | 多層レジストパターン形成方法 |
JPH07183194A (ja) | 1993-12-24 | 1995-07-21 | Sony Corp | 多層レジストパターン形成方法 |
JP2862786B2 (ja) | 1994-01-27 | 1999-03-03 | 信越化学工業株式会社 | ポリエステル−シリコーン共重合体及びそれを用いた被覆組成物 |
JPH11258813A (ja) | 1998-03-13 | 1999-09-24 | Jsr Corp | 反射防止膜形成用組成物および反射防止膜 |
JP2000053921A (ja) | 1998-08-12 | 2000-02-22 | Sumitomo Chem Co Ltd | 反射防止被膜形成組成物 |
JP4758583B2 (ja) | 1999-12-22 | 2011-08-31 | バセル テクノロジー カンパニー ビー.ブイ. | 芳香族シラン化合物を含むα−オレフィン重合触媒系 |
US6531260B2 (en) | 2000-04-07 | 2003-03-11 | Jsr Corporation | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition |
US6420088B1 (en) | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
US6740469B2 (en) | 2002-06-25 | 2004-05-25 | Brewer Science Inc. | Developer-soluble metal alkoxide coatings for microelectronic applications |
US6872506B2 (en) | 2002-06-25 | 2005-03-29 | Brewer Science Inc. | Wet-developable anti-reflective compositions |
EP1521797A4 (en) | 2002-07-11 | 2006-12-20 | Ibm | ANTI-REFLECTIVE SILICONE-CONTAINING COMPOSITIONS AS A HARD MASK LAYER |
JP2004153125A (ja) | 2002-10-31 | 2004-05-27 | Fujitsu Ltd | 加工用マスクの形成方法及び半導体装置の製造方法 |
JP2004354417A (ja) | 2003-05-27 | 2004-12-16 | Shin Etsu Chem Co Ltd | ポジ型レジスト材料並びにこれを用いたパターン形成方法 |
JP4359467B2 (ja) | 2003-08-28 | 2009-11-04 | 信越化学工業株式会社 | 新規スルホニルジアゾメタン化合物、光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法。 |
US7303855B2 (en) | 2003-10-03 | 2007-12-04 | Shin-Etsu Chemical Co., Ltd. | Photoresist undercoat-forming material and patterning process |
JP4355943B2 (ja) | 2003-10-03 | 2009-11-04 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
JP2005173552A (ja) | 2003-11-20 | 2005-06-30 | Tokyo Ohka Kogyo Co Ltd | リソグラフィー用下層膜形成材料およびこれを用いた配線形成方法 |
WO2005083006A1 (ja) | 2004-02-27 | 2005-09-09 | Mitsubishi Chemical Corporation | ケイ素含有液状組成物 |
JP4539131B2 (ja) | 2004-03-16 | 2010-09-08 | 住友化学株式会社 | 有機ケイ素系化合物、及びその製造方法 |
JP4355939B2 (ja) | 2004-07-23 | 2009-11-04 | Jsr株式会社 | 半導体装置の絶縁膜形成用組成物およびシリカ系膜の形成方法 |
JP4488215B2 (ja) * | 2004-08-19 | 2010-06-23 | 信越化学工業株式会社 | レジスト組成物並びにこれを用いたパターン形成方法 |
JP4552132B2 (ja) | 2005-03-10 | 2010-09-29 | ラサ工業株式会社 | 多層レジスト中間層形成用塗布液及びこれを用いたパターン形成方法 |
JP4583237B2 (ja) | 2005-05-16 | 2010-11-17 | 東京応化工業株式会社 | 反射防止膜形成用組成物、および配線形成方法 |
JP4553835B2 (ja) | 2005-12-14 | 2010-09-29 | 信越化学工業株式会社 | 反射防止膜材料、及びこれを用いたパターン形成方法、基板 |
JP4659678B2 (ja) | 2005-12-27 | 2011-03-30 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
JP4638380B2 (ja) | 2006-01-27 | 2011-02-23 | 信越化学工業株式会社 | 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法 |
US7771913B2 (en) | 2006-04-04 | 2010-08-10 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process using the same |
JP4842844B2 (ja) | 2006-04-04 | 2011-12-21 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
EP1845132B8 (en) | 2006-04-11 | 2009-04-01 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method |
JP4716037B2 (ja) | 2006-04-11 | 2011-07-06 | 信越化学工業株式会社 | ケイ素含有膜形成用組成物、ケイ素含有膜、ケイ素含有膜形成基板及びこれを用いたパターン形成方法 |
US7855043B2 (en) | 2006-06-16 | 2010-12-21 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method |
WO2008081789A1 (ja) | 2006-12-25 | 2008-07-10 | Chugoku Marine Paints, Ltd. | 硬化性組成物、防汚塗料組成物、防汚塗膜、防汚塗膜付き基材および基材の防汚方法 |
US8034547B2 (en) | 2007-04-13 | 2011-10-11 | Fujifilm Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
JP4562784B2 (ja) | 2007-04-13 | 2010-10-13 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液 |
JP4982288B2 (ja) | 2007-04-13 | 2012-07-25 | 富士フイルム株式会社 | パターン形成方法 |
JP5002379B2 (ja) | 2007-04-13 | 2012-08-15 | 富士フイルム株式会社 | パターン形成方法 |
JP2009025707A (ja) | 2007-07-23 | 2009-02-05 | Fujifilm Corp | ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法 |
JP4793592B2 (ja) | 2007-11-22 | 2011-10-12 | 信越化学工業株式会社 | 金属酸化物含有膜形成用組成物、金属酸化物含有膜、金属酸化物含有膜形成基板及びこれを用いたパターン形成方法 |
JP5015891B2 (ja) | 2008-10-02 | 2012-08-29 | 信越化学工業株式会社 | 金属酸化物含有膜形成用組成物、金属酸化物含有膜形成基板及びパターン形成方法 |
JP5518772B2 (ja) | 2011-03-15 | 2014-06-11 | 信越化学工業株式会社 | パターン形成方法 |
JP5785121B2 (ja) * | 2011-04-28 | 2015-09-24 | 信越化学工業株式会社 | パターン形成方法 |
JP5650086B2 (ja) | 2011-06-28 | 2015-01-07 | 信越化学工業株式会社 | レジスト下層膜形成用組成物、及びパターン形成方法 |
JP5453361B2 (ja) | 2011-08-17 | 2014-03-26 | 信越化学工業株式会社 | ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法 |
JP6060590B2 (ja) | 2011-09-30 | 2017-01-18 | Jsr株式会社 | レジストパターン形成方法 |
-
2012
- 2012-02-14 JP JP2012029230A patent/JP5739360B2/ja active Active
-
2013
- 2013-01-22 US US13/747,125 patent/US9069247B2/en active Active
- 2013-02-06 EP EP13000600.0A patent/EP2628745B1/en active Active
- 2013-02-08 TW TW102105326A patent/TWI468869B/zh active
- 2013-02-13 KR KR1020130015214A patent/KR101737666B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002083809A (ja) * | 2000-09-06 | 2002-03-22 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2004198906A (ja) * | 2002-12-20 | 2004-07-15 | Sumitomo Chem Co Ltd | 感光性組成物 |
JP2005018054A (ja) * | 2003-06-03 | 2005-01-20 | Shin Etsu Chem Co Ltd | 反射防止膜材料、これを用いた反射防止膜及びパターン形成方法 |
JP2008019423A (ja) * | 2006-06-16 | 2008-01-31 | Shin Etsu Chem Co Ltd | ケイ素含有膜形成用組成物、ケイ素含有膜、ケイ素含有膜形成基板及びこれを用いたパターン形成方法 |
JP2009128564A (ja) * | 2007-11-22 | 2009-06-11 | Nissan Chem Ind Ltd | レジスト下層膜形成組成物及び半導体装置の製造方法 |
WO2010140551A1 (ja) * | 2009-06-02 | 2010-12-09 | 日産化学工業株式会社 | スルフィド結合を有するシリコン含有レジスト下層膜形成組成物 |
WO2011105368A1 (ja) * | 2010-02-25 | 2011-09-01 | 日産化学工業株式会社 | アミック酸を含むシリコン含有レジスト下層膜形成組成物 |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013214041A (ja) * | 2012-03-07 | 2013-10-17 | Jsr Corp | レジスト下層膜形成用組成物及びパターン形成方法 |
JP2014056194A (ja) * | 2012-09-13 | 2014-03-27 | Jsr Corp | 保護膜形成組成物及びネガ型レジストパターン形成方法 |
KR102310571B1 (ko) | 2014-06-05 | 2021-10-08 | 제이에스알 가부시끼가이샤 | 실리콘 함유막 형성용 조성물, 패턴 형성 방법 및 폴리실록산 화합물 |
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US10082735B2 (en) | 2014-07-15 | 2018-09-25 | Nissan Chemical Industries, Ltd. | Silicon-containing resist underlayer film-forming composition having organic group having aliphatic polycyclic structure |
KR102398792B1 (ko) | 2014-07-15 | 2022-05-17 | 닛산 가가쿠 가부시키가이샤 | 지방족 다환구조 함유 유기기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물 |
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KR20210152018A (ko) | 2014-07-15 | 2021-12-14 | 닛산 가가쿠 가부시키가이샤 | 지방족 다환구조 함유 유기기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물 |
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EP2628745B1 (en) | 2015-03-25 |
EP2628745A1 (en) | 2013-08-21 |
TW201337466A (zh) | 2013-09-16 |
KR20130093548A (ko) | 2013-08-22 |
US20130210229A1 (en) | 2013-08-15 |
JP5739360B2 (ja) | 2015-06-24 |
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US9069247B2 (en) | 2015-06-30 |
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