ZA853990B - Process and apparatus for the cyclical manufacture of silicon shaped articles - Google Patents
Process and apparatus for the cyclical manufacture of silicon shaped articlesInfo
- Publication number
- ZA853990B ZA853990B ZA853990A ZA853990A ZA853990B ZA 853990 B ZA853990 B ZA 853990B ZA 853990 A ZA853990 A ZA 853990A ZA 853990 A ZA853990 A ZA 853990A ZA 853990 B ZA853990 B ZA 853990B
- Authority
- ZA
- South Africa
- Prior art keywords
- silicon
- manufacture
- cyclical
- shaped articles
- completely
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052710 silicon Inorganic materials 0.000 title abstract 6
- 239000010703 silicon Substances 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000005266 casting Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Catalysts (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
- Silicon Polymers (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Moulding By Coating Moulds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19843427465 DE3427465A1 (de) | 1984-07-25 | 1984-07-25 | Verfahren und vorrichtung zur taktweisen herstellung von siliciumformkoerpern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ZA853990B true ZA853990B (en) | 1986-01-29 |
Family
ID=6241559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ZA853990A ZA853990B (en) | 1984-07-25 | 1985-05-27 | Process and apparatus for the cyclical manufacture of silicon shaped articles |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4769107A (enExample) |
| EP (1) | EP0172426B1 (enExample) |
| JP (1) | JPS6136113A (enExample) |
| AT (1) | ATE62717T1 (enExample) |
| AU (1) | AU570811B2 (enExample) |
| CA (1) | CA1263293A (enExample) |
| DE (2) | DE3427465A1 (enExample) |
| ZA (1) | ZA853990B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3531610A1 (de) * | 1985-09-04 | 1987-03-05 | Wacker Chemitronic | Verfahren und vorrichtung zur herstellung von siliciumstaeben |
| DE4018967A1 (de) * | 1990-06-13 | 1991-12-19 | Wacker Chemitronic | Verfahren und vorrichtung zum giessen von siliciumbloecken mit kolumnarstruktur als grundmaterial fuer solarzellen |
| JPH07247197A (ja) * | 1994-03-09 | 1995-09-26 | Fujitsu Ltd | 半導体装置とその製造方法 |
| DE19854838A1 (de) * | 1998-11-27 | 2000-05-31 | Bayer Solar Gmbh | Gerichtet erstarrtes multikristallines Silicium sowie Verfahren zu dessen Herstellung |
| AU2003277041A1 (en) * | 2002-09-27 | 2004-04-19 | Astropower, Inc. | Methods and systems for purifying elements |
| US7465351B2 (en) * | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7344594B2 (en) * | 2004-06-18 | 2008-03-18 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7691199B2 (en) * | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7243578B2 (en) * | 2005-12-14 | 2007-07-17 | Scott Burwell | Skateboard tool |
| JP2008156166A (ja) * | 2006-12-25 | 2008-07-10 | Sumco Solar Corp | シリコンインゴットの鋳造方法および切断方法 |
| CN101307487B (zh) * | 2007-05-16 | 2010-05-19 | 佳科太阳能硅(厦门)有限公司 | 一种连续生产多晶硅锭的定向凝固方法及其装置 |
| TW201012978A (en) * | 2008-08-27 | 2010-04-01 | Bp Corp North America Inc | Apparatus and method of use for a casting system with independent melting and solidification |
| TW201019480A (en) * | 2008-08-27 | 2010-05-16 | Bp Corp North America Inc | High temperature support apparatus and method of use for casting materials |
| US20120159993A1 (en) * | 2010-11-30 | 2012-06-28 | Rec Silicon Inc. | Feedstock melting and casting system and process |
| PL224286B1 (pl) * | 2011-08-17 | 2016-12-30 | Polycor Spółka Z Ograniczoną Odpowiedzialnością | Sposób syntezy surowcowego wsadu korundu w postaci bloczka polikrystalicznego do hodowania kryształów szafiru oraz urządzenie do realizacji tego sposobu |
| CN112011827A (zh) * | 2019-05-31 | 2020-12-01 | 东泰高科装备科技有限公司 | 制作高纯砷棒的装置及方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1176125A (fr) * | 1955-10-12 | 1959-04-07 | Degussa | Procédé pour couler une masse fondue sous pression réduite et installation pour sa mise en oeuvre |
| FR1188576A (fr) * | 1956-11-17 | 1959-09-23 | Heraeus Gmbh W C | Procédé d'exploitation d'une installation de fusion par induction sous vide |
| CH414955A (de) * | 1961-09-04 | 1966-06-15 | Asea Ab | Vorrichtung zum Ein- und Ausfahren von Kokillen |
| US3567526A (en) * | 1968-05-01 | 1971-03-02 | United Aircraft Corp | Limitation of carbon in single crystal or columnar-grained nickel base superalloys |
| US3601179A (en) * | 1970-01-23 | 1971-08-24 | Pennwalt Corp | Multichamber directional solidification vacuum casting furnance |
| US3771586A (en) * | 1972-02-22 | 1973-11-13 | United Aircraft Corp | Apparatus for continuous casting of directionally solidified articles |
| DE2508803C3 (de) * | 1975-02-28 | 1982-07-08 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur |
| DE2745247C3 (de) * | 1977-10-07 | 1980-03-13 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren und Vorrichtung zur semikontinuierlichen Herstellung von Siliciumformkörpern |
| DE2914506A1 (de) * | 1979-04-10 | 1980-10-16 | Siemens Ag | Verfahren zum herstellen von grossflaechigen, plattenfoermigen siliziumkristallen mit kolumnarstruktur |
| DE2925679A1 (de) * | 1979-06-26 | 1981-01-22 | Heliotronic Gmbh | Verfahren zur herstellung von siliciumstaeben |
| DE3310827A1 (de) * | 1983-03-24 | 1984-09-27 | Bayer Ag, 5090 Leverkusen | Verfahren zur herstellung von grobkristallinem silicium |
| US4647437A (en) * | 1983-05-19 | 1987-03-03 | Mobil Solar Energy Corporation | Apparatus for and method of making crystalline bodies |
| GB2139916A (en) * | 1983-05-19 | 1984-11-21 | Mobil Solar Energy Corp | EFG Apparatus |
| US4665970A (en) * | 1985-11-20 | 1987-05-19 | O.C.C. Company Limited | Method of producing a metallic member having a unidirectionally solidified structure |
-
1984
- 1984-07-25 DE DE19843427465 patent/DE3427465A1/de not_active Withdrawn
-
1985
- 1985-05-10 JP JP9813385A patent/JPS6136113A/ja active Granted
- 1985-05-27 ZA ZA853990A patent/ZA853990B/xx unknown
- 1985-06-26 US US06/748,760 patent/US4769107A/en not_active Expired - Lifetime
- 1985-07-05 CA CA000486406A patent/CA1263293A/en not_active Expired
- 1985-07-19 AU AU45194/85A patent/AU570811B2/en not_active Ceased
- 1985-07-23 DE DE8585109144T patent/DE3582536D1/de not_active Expired - Lifetime
- 1985-07-23 AT AT85109144T patent/ATE62717T1/de not_active IP Right Cessation
- 1985-07-23 EP EP85109144A patent/EP0172426B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CA1263293C (en) | 1989-11-28 |
| US4769107A (en) | 1988-09-06 |
| ATE62717T1 (de) | 1991-05-15 |
| AU4519485A (en) | 1986-01-30 |
| CA1263293A (en) | 1989-11-28 |
| EP0172426A3 (en) | 1988-05-04 |
| EP0172426B1 (de) | 1991-04-17 |
| JPS6136113A (ja) | 1986-02-20 |
| EP0172426A2 (de) | 1986-02-26 |
| JPS646130B2 (enExample) | 1989-02-02 |
| DE3427465A1 (de) | 1986-01-30 |
| AU570811B2 (en) | 1988-03-24 |
| DE3582536D1 (de) | 1991-05-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU570811B2 (en) | Cyclical manufacture of silicon articles | |
| US4312700A (en) | Method for making silicon rods | |
| GB2110241B (en) | Method of producing columnar crystal superalloy material with controlled orientation | |
| GB2030069B (en) | Mould for directional solidified single crystal castings and method for preparing same | |
| ES8501209A1 (es) | Metodo de preparar caramelos duros y similares | |
| GB2121828B (en) | Method of casting charges for use in a liquid phase epitaxy growth process | |
| EP0149887A3 (en) | Apparatus and method for casting single crystal articles | |
| CN112522782B (zh) | 一种多晶硅锭及其制备方法 | |
| JPS6237112A (ja) | 粉体スラッシュ成形方法 | |
| JPS5913219Y2 (ja) | 多結晶シリコンインゴットの鋳造用鋳型 | |
| JPS57134235A (en) | Production of polycrystalline silicon semiconductor | |
| GB2195941B (en) | Method of making mold used in slip casting process | |
| FR2438499A1 (fr) | Procede de purification et d'elaboration de cristaux par fusion de zone utilisant un jet de plasma et installation correspondante | |
| JPS5534115A (en) | Crystallization method | |
| DE3560643D1 (en) | Process for producing large-surface silicon crystal bodies for solar cells | |
| JPS56105623A (en) | Manufacture of polycrystalline silicon semiconductor | |
| BE893894A (fr) | Moule et procede pour le moulage de lingots de silicium destine a etre utilises comme materiau pour la realisation de cellules solaires | |
| JPS54123586A (en) | Method of preparing stable melting zone in crucibleefree zone melting for semiconductor crystalline rod | |
| JPS56149399A (en) | Liquid phase epitaxial growing method | |
| JPH0367075U (enExample) | ||
| JPS57166394A (en) | Preparing apparatus of ribbon-like crystal | |
| JPS6483593A (en) | Apparatus for growing semiconductor single crystal | |
| JPS5575929A (en) | Method and apparatus for continuously molding rodlike glass | |
| JPS5485188A (en) | Liquid phase growing device | |
| JPS61275189A (ja) | 板状単結晶の連続製造法 |