ZA823251B - Alterable threshold semiconductor memory device - Google Patents

Alterable threshold semiconductor memory device

Info

Publication number
ZA823251B
ZA823251B ZA823251A ZA823251A ZA823251B ZA 823251 B ZA823251 B ZA 823251B ZA 823251 A ZA823251 A ZA 823251A ZA 823251 A ZA823251 A ZA 823251A ZA 823251 B ZA823251 B ZA 823251B
Authority
ZA
South Africa
Prior art keywords
memory device
semiconductor memory
threshold semiconductor
alterable threshold
alterable
Prior art date
Application number
ZA823251A
Other languages
English (en)
Inventor
James Anthony Topich
Original Assignee
Ncr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ncr Co filed Critical Ncr Co
Publication of ZA823251B publication Critical patent/ZA823251B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
ZA823251A 1981-05-11 1982-05-11 Alterable threshold semiconductor memory device ZA823251B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26238081A 1981-05-11 1981-05-11

Publications (1)

Publication Number Publication Date
ZA823251B true ZA823251B (en) 1983-03-30

Family

ID=22997252

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA823251A ZA823251B (en) 1981-05-11 1982-05-11 Alterable threshold semiconductor memory device

Country Status (5)

Country Link
EP (1) EP0078318A4 (de)
JP (1) JPS58500683A (de)
DK (1) DK6283D0 (de)
WO (1) WO1982004162A1 (de)
ZA (1) ZA823251B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59143331A (ja) * 1983-01-31 1984-08-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体構造体
JP2755781B2 (ja) * 1990-04-23 1998-05-25 株式会社東芝 半導体記憶装置およびその製造方法
JPH0548115A (ja) * 1991-08-20 1993-02-26 Rohm Co Ltd 半導体不揮発性記憶装置
JP3635681B2 (ja) * 1994-07-15 2005-04-06 ソニー株式会社 バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法
US6265268B1 (en) * 1999-10-25 2001-07-24 Advanced Micro Devices, Inc. High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device
US6528845B1 (en) * 2000-07-14 2003-03-04 Lucent Technologies Inc. Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection
US6812517B2 (en) 2002-08-29 2004-11-02 Freescale Semiconductor, Inc. Dielectric storage memory cell having high permittivity top dielectric and method therefor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA942641A (en) * 1970-05-25 1974-02-26 Rca Corporation Semiconductor body of preselected surface potential
JPS49116982A (de) * 1973-12-14 1974-11-08
DE2723738C2 (de) * 1977-05-26 1984-11-08 Deutsche Itt Industries Gmbh, 7800 Freiburg Halbleiterspeicherzelle für das nichtflüchtige Speichern elektrischer Ladung und Verfahren zu deren Programmierung
US4131902A (en) * 1977-09-30 1978-12-26 Westinghouse Electric Corp. Novel bipolar transistor with a dual-dielectric tunnel emitter
US4249191A (en) * 1978-04-21 1981-02-03 Mcdonnell Douglas Corporation Stripped nitride structure and process therefor
DE2832388C2 (de) * 1978-07-24 1986-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von MNOS- und MOS-Transistoren in Silizium-Gate-Technologie auf einem Halbleitersubstrat
US4242737A (en) * 1978-11-27 1980-12-30 Texas Instruments Incorporated Non-volatile semiconductor memory elements
WO1981000790A1 (en) * 1979-09-13 1981-03-19 Ncr Co Silicon gate non-volatile memory device
DE3032364C2 (de) * 1980-08-28 1987-11-12 Philips Patentverwaltung Gmbh, 2000 Hamburg Elektrisch programmierbarer Halbleiter-Festwertspeicher und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
EP0078318A4 (de) 1983-06-24
JPS58500683A (ja) 1983-04-28
DK6283A (da) 1983-01-10
WO1982004162A1 (en) 1982-11-25
DK6283D0 (da) 1983-01-10
EP0078318A1 (de) 1983-05-11

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