ZA746269B - Improvements in or relating to the manufacutre of uniformly doped p-conductive silicon monocrystals - Google Patents

Improvements in or relating to the manufacutre of uniformly doped p-conductive silicon monocrystals

Info

Publication number
ZA746269B
ZA746269B ZA00746269A ZA746269A ZA746269B ZA 746269 B ZA746269 B ZA 746269B ZA 00746269 A ZA00746269 A ZA 00746269A ZA 746269 A ZA746269 A ZA 746269A ZA 746269 B ZA746269 B ZA 746269B
Authority
ZA
South Africa
Prior art keywords
manufacutre
relating
conductive silicon
uniformly doped
silicon monocrystals
Prior art date
Application number
ZA00746269A
Other languages
English (en)
Inventor
J Martin
K Reuschel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ZA746269B publication Critical patent/ZA746269B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
ZA00746269A 1974-02-18 1974-10-02 Improvements in or relating to the manufacutre of uniformly doped p-conductive silicon monocrystals ZA746269B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2407697A DE2407697C3 (de) 1974-02-18 1974-02-18 Verfahren zum Herstellen eines homogen Ga-dotierten Siliciumeinkristalls

Publications (1)

Publication Number Publication Date
ZA746269B true ZA746269B (en) 1975-10-29

Family

ID=5907718

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA00746269A ZA746269B (en) 1974-02-18 1974-10-02 Improvements in or relating to the manufacutre of uniformly doped p-conductive silicon monocrystals

Country Status (12)

Country Link
JP (1) JPS5329572B2 (cs)
AT (1) AT339379B (cs)
BE (1) BE816719A (cs)
DE (1) DE2407697C3 (cs)
DK (1) DK658274A (cs)
FR (1) FR2261055B1 (cs)
GB (1) GB1442930A (cs)
IT (1) IT1031627B (cs)
NL (1) NL7410745A (cs)
PL (1) PL91842B1 (cs)
SU (1) SU717999A3 (cs)
ZA (1) ZA746269B (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9799736B1 (en) 2016-07-20 2017-10-24 International Business Machines Corporation High acceptor level doping in silicon germanium

Also Published As

Publication number Publication date
NL7410745A (nl) 1975-08-20
GB1442930A (en) 1976-07-14
DE2407697B2 (de) 1978-04-06
SU717999A3 (ru) 1980-02-25
AT339379B (de) 1977-10-10
JPS50120253A (cs) 1975-09-20
JPS5329572B2 (cs) 1978-08-22
FR2261055A1 (cs) 1975-09-12
PL91842B1 (cs) 1977-03-31
BE816719A (fr) 1974-10-16
DE2407697C3 (de) 1978-11-30
IT1031627B (it) 1979-05-10
DE2407697A1 (de) 1975-09-18
FR2261055B1 (cs) 1979-01-05
DK658274A (cs) 1975-10-27
ATA667874A (de) 1977-02-15

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