ZA200605869B - Method for electrolytic engineering of nano-particulate layers - Google Patents

Method for electrolytic engineering of nano-particulate layers Download PDF

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Publication number
ZA200605869B
ZA200605869B ZA200605869A ZA200605869A ZA200605869B ZA 200605869 B ZA200605869 B ZA 200605869B ZA 200605869 A ZA200605869 A ZA 200605869A ZA 200605869 A ZA200605869 A ZA 200605869A ZA 200605869 B ZA200605869 B ZA 200605869B
Authority
ZA
South Africa
Prior art keywords
layer
nano
electrolyte
nanoparticulate
particulate
Prior art date
Application number
ZA200605869A
Other languages
English (en)
Inventor
Skryabin Igor Lvovich
Evans Graeme Leslie
Original Assignee
Dyesol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2003906985A external-priority patent/AU2003906985A0/en
Application filed by Dyesol Ltd filed Critical Dyesol Ltd
Publication of ZA200605869B publication Critical patent/ZA200605869B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2027Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
ZA200605869A 2003-12-18 2006-07-17 Method for electrolytic engineering of nano-particulate layers ZA200605869B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AU2003906985A AU2003906985A0 (en) 2003-12-18 Method for electrolytic engineering of nano-particulate layers

Publications (1)

Publication Number Publication Date
ZA200605869B true ZA200605869B (en) 2007-10-31

Family

ID=34682620

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA200605869A ZA200605869B (en) 2003-12-18 2006-07-17 Method for electrolytic engineering of nano-particulate layers

Country Status (8)

Country Link
US (1) US8002960B2 (fr)
EP (1) EP1697999A4 (fr)
JP (1) JP4909740B2 (fr)
KR (1) KR101056514B1 (fr)
CN (1) CN100477287C (fr)
CA (1) CA2550422A1 (fr)
WO (1) WO2005060008A1 (fr)
ZA (1) ZA200605869B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8002960B2 (en) * 2003-12-18 2011-08-23 Dyesol Ltd. Method for electrolytic engineering of nano-particulate layers
CN100433373C (zh) * 2005-12-28 2008-11-12 大连海事大学 一种纳米TiO2-M薄膜紫外光传感器及其制备方法
JP5636188B2 (ja) * 2006-07-21 2014-12-03 ヴァルティオン テクニリネン ツッツキムスケスクス 導体および半導体の製造方法
FI122014B (fi) 2007-06-08 2011-07-15 Teknologian Tutkimuskeskus Vtt Menetelmä ja laite nanopartikkelijärjestelmien toiminnallistamiseksi
DE202008001599U1 (de) 2008-02-04 2008-06-26 Knöchel, Arndt, Prof. Dr. Elektrolytische Zusammensetzung für eine Farbstoffsolarzelle
WO2015021338A1 (fr) * 2013-08-07 2015-02-12 Xagenic Inc. Régulateur de croissance à capteur

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US4142947A (en) * 1977-05-12 1979-03-06 Uri Cohen Electrodeposition of polycrystalline silicon from a molten fluoride bath and product
US4666567A (en) * 1981-07-31 1987-05-19 The Boeing Company Automated alternating polarity pulse electrolytic processing of electrically conductive substances
ES2212286T3 (es) * 1997-05-07 2004-07-16 Ecole Polytechnique Federale De Lausanne Fotosensibilizador de complejo metalico y celula fotovoltaica.
JPH11144773A (ja) 1997-09-05 1999-05-28 Fuji Photo Film Co Ltd 光電変換素子および光再生型光電気化学電池
US6444189B1 (en) * 1998-05-18 2002-09-03 E. I. Du Pont De Nemours And Company Process for making and using titanium oxide particles
JP3437475B2 (ja) * 1998-12-28 2003-08-18 キヤノン株式会社 酸化亜鉛膜の形成方法及び該酸化亜鉛膜を用いた光起電力素子
US6340633B1 (en) * 1999-03-26 2002-01-22 Advanced Micro Devices, Inc. Method for ramped current density plating of semiconductor vias and trenches
US6359211B1 (en) 1999-06-17 2002-03-19 Chemmotif, Inc. Spectral sensitization of nanocrystalline solar cells
JP4500420B2 (ja) * 2000-09-20 2010-07-14 富士フイルム株式会社 光電変換素子および光電池
JP4278080B2 (ja) * 2000-09-27 2009-06-10 富士フイルム株式会社 高感度受光素子及びイメージセンサー
JP4461657B2 (ja) * 2000-12-07 2010-05-12 セイコーエプソン株式会社 光電変換素子
JP4461656B2 (ja) 2000-12-07 2010-05-12 セイコーエプソン株式会社 光電変換素子
EP1363348B1 (fr) * 2001-02-21 2015-04-08 Showa Denko K.K. Dispersion d'oxyde metallique et electrode photoactive pour une pile solaire sensible a la couleur et pile solaire sensible a la couleur
US20020145826A1 (en) * 2001-04-09 2002-10-10 University Of Alabama Method for the preparation of nanometer scale particle arrays and the particle arrays prepared thereby
JP2003030891A (ja) * 2001-07-12 2003-01-31 Sony Corp 光ピックアップ
DE60132450T2 (de) * 2001-09-04 2008-04-17 Sony Deutschland Gmbh Solarzelle und Herstellungsmethode
JP2003100357A (ja) * 2001-09-20 2003-04-04 Fuji Photo Film Co Ltd 光電変換素子の作製方法、光電変換素子及び光電池
US6852920B2 (en) * 2002-06-22 2005-02-08 Nanosolar, Inc. Nano-architected/assembled solar electricity cell
CN1211866C (zh) 2002-12-25 2005-07-20 中国科学院等离子体物理研究所 染料敏化纳米薄膜太阳电池用电解质溶液
US8002960B2 (en) * 2003-12-18 2011-08-23 Dyesol Ltd. Method for electrolytic engineering of nano-particulate layers
KR20070075186A (ko) * 2006-01-12 2007-07-18 삼성전자주식회사 분산제 기능을 갖는 염료 및 이를 채용한 태양 전지

Also Published As

Publication number Publication date
JP4909740B2 (ja) 2012-04-04
EP1697999A4 (fr) 2010-12-01
JP2007521623A (ja) 2007-08-02
US20080105362A1 (en) 2008-05-08
CN100477287C (zh) 2009-04-08
WO2005060008A1 (fr) 2005-06-30
CA2550422A1 (fr) 2005-06-30
CN1898807A (zh) 2007-01-17
KR20070041665A (ko) 2007-04-19
EP1697999A1 (fr) 2006-09-06
KR101056514B1 (ko) 2011-08-12
US8002960B2 (en) 2011-08-23

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