Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/80—Constructional details
  • H10K30/88—Passivation; Containers; Encapsulations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/50—Encapsulations or containers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/20—Electrodes
  • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
  • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/50—Photovoltaic [PV] devices

Definitions

• the first embodiment relates to a barrier film that has high gas barrier properties and high resistance to moisture, and therefore also has excellent weather resistance and durability.
• the configuration of the barrier film of this embodiment will be described below.
• the barrier film according to the embodiment may be provided with one or more additional barrier layers on the opposite side of the contact surface a of the inorganic barrier layer, and may be provided with one or more additional sealing layers on the opposite side of the contact surface a of the sealing layer.
• an additional barrier layer 103 and an additional sealing layer 104 are shown as examples, but these may be omitted, and two or more additional barrier layers or additional sealing layers may be laminated.
• the inorganic barrier layer may be disposed on a substrate (not shown).
• the substrate may be glass or a resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN).
• PET polyethylene terephthalate
• PEN polyethylene naphthalate
• a substrate containing a resin containing a halogen element is preferable, and the substrate may be composed of only a resin having a halogen element.
• the resin constituting the substrate it is more preferable to use a resin having flame retardancy with an oxygen index of 22% or more, for example, polyvinyl chloride (PVC), polyvinylidene chloride (PVDC), silicone resin, polyvinylidene fluoride (PVDF), polyimide (PI), and polycarbonate (PC).
• PVC polyvinyl chloride
• PVDC polyvinylidene chloride
• silicone resin silicone resin
• PVDF polyvinylidene fluoride
• PI polyimide
• PC polycarbonate
• the substrate may be a composite material combining multiple members.
• graphene has a skeleton in which carbon atoms are bonded in a planar shape, and is preferably chemically modified.
• One of the preferred graphenes has a structure in which polyalkyleneimine, particularly polyethyleneimine chains, are bonded as shown in the following formula:
• graphene When graphene has such a structure, its water dispersibility is improved, so when a film is formed by coating, coating becomes easier and the zeta potential can be made positive.
• silicon oxide or silicon nitride When silicon oxide or silicon nitride is used for the inorganic barrier film, their zeta potential is negative, so the adhesion between the inorganic barrier layer and the sealing layer is improved, and therefore graphene having a structure in which polyethyleneimine chains are bonded is preferable.
• Such maxine having a hydroxyl group is preferred because the layered structure of the maxine particles is easily maintained by interlayer hydrogen bonds.
• a nitrogen-containing compound is present on the surface of the maxine particle, it is preferred because it can make the zeta potential of maxine positive and make it easier to adsorb ions.
• one or more additional sealing layers may be laminated on the opposite side of the contact surface a of the sealing layer.
• the material for the additional sealing layer can be selected from the materials listed as the sealing layer materials.
• the sealing layer is formed from a two-dimensional material that swells with water vapor, the two-dimensional material swells when it comes into contact with water vapor, narrowing the gaps between particles and making it easier to reduce the water vapor permeability. Therefore, it is preferable that the sealing layer is formed from a two-dimensional material that swells with water vapor.
• the sheet resistance of the sealing layer is preferably 10 4 to 10 12 ⁇ , and more preferably 10 4 to 10 8 ⁇ .
• Two-dimensional materials have excellent gas shielding properties in areas without defects, making them suitable as materials for forming sealing layers. Furthermore, they are particles with a high aspect ratio, specifically widths on the order of ⁇ m and thicknesses on the order of nm, and by applying a dispersion of these particles, it is easy to form a large-area, flexible sealing layer.
• a strong barrier film can be formed by layering a layer (barrier layer) of aluminum oxide or titanium oxide with a positive zeta potential on silicon oxide (additional barrier layer) with a negative zeta potential, layering a layer (sealing layer) of maxine with a negative zeta potential on top of that, and then layering a layer (additional sealing layer) of graphene bonded to polyethyleneimine chains with a positive zeta potential on top of that.
• the zeta potential of the surface of a flat sample can be measured by electrophoretic light scattering (ELS) using a Zetasizer Nano ZS (Malvern Instruments). Specifically, it is measured using a flat zeta potential measurement cell and polystyrene latex as tracer particles.
• the pH when measuring the zeta potential can be adjusted by adding dilute hydrochloric acid and dilute potassium hydroxide aqueous solution to pure water.
• the zeta potential of a powdered sample can be measured by electrophoretic light scattering (ELS) using a Zetasizer Nano ZS (Malvern Instruments).
• ELS electrophoretic light scattering
• the cell used is a capillary cell.
• the zeta potentials of the inorganic barrier layer, the additional barrier layer, the sealing layer, and the additional sealing layer at their respective contact interfaces can be evaluated using flat plate samples if they can be peeled off at the interfaces, or can be evaluated using flat plate or powder samples containing each material separately.
• DMF N,N-dimethylformamide
• DMSO dimethyl sulfoxide
• 2-propanol 2-propanol
• ⁇ -butyrolactone can also be used.
• solvents can be used alone or in combination. There are no particular restrictions on the solvent as long as it can dissolve the material and does not damage the material.
• the second electrode 205 preferably contains a transparent conductive material.
• the second electrode 205 of this embodiment may be made of the same material as the first electrode 203.
• the second electrode 205 may be formed by a vacuum deposition method, a sputtering method, an ion plating method, a plating method, a coating method, or the like, similarly to the first electrode 203.
• a protective film or the like may be provided between the solar cell power generating section 201 and the barrier film 100, or the solar cell power generating section 201 and the barrier film 100 may be in direct contact with each other.
• Example 1 A barrier film 300 having the structure shown in FIG. 3 is formed.
• a polycarbonate (PC) film having a thickness of 100 ⁇ m is prepared as a substrate 301, and a barrier layer 302 made of a silicon oxide film having a thickness of 100 nm is formed by sputtering three times on the surface of this substrate 301.
• the zeta potential of the silicon oxide film 302 in water of pH 6 is negative.
• the resulting barrier film 300 has an excellent barrier property with a WVTR of 4 ⁇ 10 ⁇ 3 g/m 2 /day, and even when a bending test is performed 100 times using a glass rod with a diameter of 5 mm, the WVTR increases by only 10%.
• maxine titanium carbide
• the resulting barrier film 400 has an excellent barrier property with a WVTR of 5 ⁇ 10 ⁇ 3 g/m 2 /day, and even when a bending test is performed 100 times using a glass rod with a diameter of 5 mm, the WVTR increases by only 8%.
• Example 4 A barrier film 600 having the structure shown in FIG. 6 is prepared. First, a 100 ⁇ m thick polyethylene phthalate (PET) film is prepared as the substrate 601, and a 150 nm thick crystalline ITO film 602 is formed on the back surface. A 100 nm thick silicon oxide film 603 is formed on the surface of this substrate 601 by three sputtering processes. A 50 nm thick titanium oxide film 604 is formed on top of this by two sputtering processes to form a barrier layer 605. The zeta potential of titanium oxide 603 in water with a pH of 6 is positive. The titanium oxide film also serves as an ultraviolet absorbing layer.
• PET polyethylene phthalate
• Example 6 A solar cell 700 shown in FIG. 7 is produced.
• a transparent electrode (second electrode) 72 of indium tin oxide (ITO) (200 nm) is formed by sputtering on a PC film (substrate 701) with a hard coat layer having a thickness of 100 ⁇ m.
• a toluene solution of C 60 -PCBM is applied to this transparent electrode 702 with a bar coater and dried to form an electron injection layer 703.

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• Physics & Mathematics (AREA)
• Electromagnetism (AREA)
• Laminated Bodies (AREA)
• Photovoltaic Devices (AREA)

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Citations (10)

• 2023
  • 2023-10-11 WO PCT/JP2023/036862 patent/WO2025079168A1/ja active Pending
  • 2023-10-11 JP JP2025551256A patent/JPWO2025079168A1/ja active Pending
  • 2023-10-11 CN CN202380091551.0A patent/CN120660467A/zh active Pending
  • 2023-10-11 EP EP23955419.9A patent/EP4633332A1/en active Pending
• 2025
  • 2025-07-11 US US19/266,583 patent/US20250344552A1/en active Pending

Patent Citations (10)

Non-Patent Citations (1)

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