WO2024048187A1 - 半導体装置、および、半導体装置の製造方法 - Google Patents

半導体装置、および、半導体装置の製造方法 Download PDF

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Publication number
WO2024048187A1
WO2024048187A1 PCT/JP2023/028284 JP2023028284W WO2024048187A1 WO 2024048187 A1 WO2024048187 A1 WO 2024048187A1 JP 2023028284 W JP2023028284 W JP 2023028284W WO 2024048187 A1 WO2024048187 A1 WO 2024048187A1
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Prior art keywords
semiconductor device
main surface
surface electrode
positioning
positioning member
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English (en)
French (fr)
Japanese (ja)
Inventor
克彦 吉原
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Rohm Co Ltd
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Rohm Co Ltd
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Priority to JP2024544062A priority Critical patent/JPWO2024048187A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Definitions

  • the present disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device.
  • Patent Document 1 discloses an example of such a semiconductor device.
  • the conductive member When a conductive member is conductively bonded to the main surface electrode of a semiconductor element via a conductive bonding layer, for example, the conductive member may move closer to, move away from, or tilt from the main surface electrode. There is a concern that this may cause the thickness of the conductive bonding layer to become non-uniform.
  • An object of the present disclosure is to provide a semiconductor device that is improved over conventional ones, and a method for manufacturing such a semiconductor device.
  • a semiconductor device provided by a first aspect of the present disclosure includes a semiconductor element having a first main surface electrode, a conductive member, and a conductive bonding layer that electrically connects the first main surface electrode and the conductive member. Equipped with. Further, the semiconductor device includes a first positioning member disposed between the first main surface electrode and the conductive member and in contact with the first main surface electrode and the conductive member.
  • the thickness of the conductive bonding layer can be made more uniform in the semiconductor device.
  • FIG. 1 is a partial perspective view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 3 is a partial plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 4 is a bottom view of the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 5 is a left side view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
  • FIG. 7 is a cross-sectional view taken along line VII-VII in FIG.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
  • FIG. 7 is a cross-sectional view taken along line VII-VII in FIG.
  • FIG. 8 is a cross-sectional view taken along line VIII-
  • FIG. 9 is a cross-sectional view taken along line IX-IX in FIG.
  • FIG. 10 is a partially enlarged plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 11 is a partially enlarged sectional view taken along line XI-XI in FIG. 10.
  • FIG. 12 is a partially enlarged sectional view taken along line XII-XII in FIG.
  • FIG. 13 is a partially enlarged sectional view taken along line XIII-XIII in FIG. 10.
  • FIG. 14 is a partially enlarged plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 15 is a partially enlarged sectional view taken along line XV-XV in FIG. 14.
  • FIG. 16 is a partially enlarged sectional view taken along line XVI-XVI in FIG. 14.
  • FIG. 17 is a partially enlarged sectional view taken along line XVII-XVII in FIG. 14.
  • FIG. 18 is a partially enlarged cross-sectional view showing a method for manufacturing a semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 19 is a partially enlarged cross-sectional view showing a method for manufacturing a semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 20 is a partially enlarged cross-sectional view showing the method for manufacturing a semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 21 is a partially enlarged cross-sectional view showing the method for manufacturing a semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 22 is a partially enlarged cross-sectional view showing the method for manufacturing a semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 23 is a partially enlarged plan view showing a first modification of the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 24 is a partially enlarged plan view showing a second modification of the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 25 is a partially enlarged sectional view showing a third modification of the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 26 is a partially enlarged sectional view showing a fourth modification of the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 27 is a partially enlarged cross-sectional view showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 28 is a partially enlarged plan view showing a semiconductor device according to a third embodiment of the present disclosure.
  • a thing A is formed on a thing B and "a thing A is formed on a thing B” mean “a thing A is formed on a thing B” unless otherwise specified.
  • "something A is placed on something B” and “something A is placed on something B” mean "something A is placed on something B” unless otherwise specified.
  • a certain surface A faces (one side or the other side of) the direction B is not limited to the case where the angle of the surface A with respect to the direction B is 90 degrees; Including cases where it is tilted to the opposite direction.
  • the semiconductor device A10 includes two insulating members 11, two conductive members 12, two heat dissipating members 13, a plurality of fourth conductive members 14, a plurality of first semiconductor elements 21, a plurality of second semiconductor elements 22, and a sealing resin. 50, a plurality of first positioning members 71, 73, a plurality of second positioning members 72, 74, a plurality of conductive bonding layers 291, and a plurality of conductive bonding layers 292.
  • the semiconductor device A10 includes a first wiring 15, a second wiring 16, a first gate terminal 171, a second gate terminal 172, a first detection terminal 181, a second detection terminal 182, a plurality of first wires 41, a plurality of first wires 41, and a plurality of first wires 41.
  • illustration of the sealing resin 50 is omitted for convenience of understanding.
  • the sealing resin 50 is shown by an imaginary line (two-dot chain line).
  • FIG. 3 shows the second conductive member 32 with imaginary lines.
  • the thickness direction of the first semiconductor element 21 and the second semiconductor element 22 will be referred to as "thickness direction z.”
  • One direction perpendicular to the thickness direction z is referred to as a “first direction x.”
  • a direction perpendicular to both the thickness direction z and the first direction x is referred to as a “second direction y.”
  • the semiconductor device A10 converts the DC power supply voltage applied to the first conductive member 31 and the second conductive member 32 into AC power using the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22.
  • the converted AC power is input from the third conductive member 33 to a power supply target such as a motor.
  • the semiconductor device A10 constitutes a part of a power conversion circuit such as an inverter.
  • the two insulating members 11 are located apart from each other in the first direction x, as shown in FIGS. 2 and 3.
  • the two insulating members 11 are made of a resin material containing epoxy resin.
  • the two insulating members 11 may be made of a ceramic material containing aluminum nitride (AlN).
  • the two conductive members 12 are located on one side of the two insulating members 11 in the thickness direction z, as shown in FIGS. 6 and 7.
  • the two conductive members 12 are individually joined to the two insulating members 11.
  • first member 12A the conductive member 12 on which the plurality of first semiconductor elements 21 are mounted
  • second member 12B the conductive member 12 on which the plurality of second semiconductor elements 22 are mounted
  • Each of the two conductive members 12 has a main surface 121, a back surface 122, and a first end surface 123.
  • the main surface 121 and the back surface 122 face opposite to each other in the thickness direction z.
  • the main surface 121 includes a first main surface 121A belonging to the first member 12A and a second main surface 121B belonging to the second member 12B.
  • the first main surface 121A faces the plurality of first semiconductor elements 21.
  • the second main surface 121B faces the plurality of second semiconductor elements 22.
  • the back surface 122 is joined to either of the two insulating members 11.
  • each of the two conductive members 12 includes a first layer 120A, a second layer 120B, and a bonding layer 120C.
  • the first layer 120A has a back surface 122.
  • the second layer 120B has a main surface 121.
  • the compositions of the first layer 120A and the second layer 120B include copper (Cu).
  • the dimension in the thickness direction z of the second layer 120B is larger than the dimension in the thickness direction of the first layer 120A.
  • the bonding layer 120C has a first end surface 123.
  • the bonding layer 120C conductively bonds the first layer 120A and the second layer 120B.
  • the bonding layer 120C contains a metal element.
  • the metal element is, for example, tin (Sn).
  • the two heat dissipating members 13 are located on the opposite side of the two electrically conductive members 12 in the thickness direction with respect to the two insulating members 11.
  • the two heat dissipating members 13 are individually joined to the two insulating members 11.
  • the composition of the two heat radiating members 13 includes copper.
  • Each of the two heat radiating members 13 has an end surface 131 facing in a direction perpendicular to the thickness direction z.
  • the end surface 131 is surrounded by the periphery of the insulating member 11 when viewed in the thickness direction z.
  • a portion of each of the two heat radiating members 13 is exposed to the outside from the sealing resin 50.
  • a heat sink (not shown) is joined to the two heat radiating members 13.
  • the specific configurations of the two insulating members 11, the first layer 120A of the two conductive members 12, and the two heat dissipating members 13 are not limited at all, and are configured by, for example, a DBC (Direct Bonded Copper) substrate.
  • DBC Direct Bonded Copper
  • the plurality of first semiconductor elements 21 are bonded to the first main surface 121A of the first member 12A. In this embodiment, all of the plurality of first semiconductor elements 21 are the same element.
  • the plurality of first semiconductor elements 21 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors).
  • the plurality of first semiconductor elements 21 may be field-effect transistors including MISFETs (Metal-Insulator-Semiconductor Field-Effect Transistors), or bipolar transistors such as IGBTs (Insulated Gate Bipolar Transistors).
  • the plurality of first semiconductor elements 21 are n-channel type MOSFETs with a vertical structure.
  • the plurality of first semiconductor elements 21 include a compound semiconductor substrate.
  • the composition of the compound semiconductor substrate includes silicon carbide (SiC).
  • the plurality of first semiconductor elements 21 are arranged along the second direction y.
  • the first semiconductor element 21 has a first back electrode 211, a first main surface electrode 212, and a second main surface electrode 213.
  • the first back electrode 211 faces the first main surface 121A of the first member 12A. A current corresponding to the power before being converted by the first semiconductor element 21 flows through the first back electrode 211 .
  • the first back electrode 211 is, for example, a drain electrode.
  • the first back electrode 211 is conductively bonded to the first main surface 121A via the conductive bonding layer 291. Therefore, the first back electrodes 211 of the plurality of first semiconductor elements 21 are electrically connected to the first member 12A.
  • the conductive bonding layer 291 is, for example, solder. In addition, the conductive bonding layer 291 may be a sintered metal containing silver or the like.
  • the first main surface electrode 212 is located on the opposite side from the first back electrode 211 in the thickness direction z. A current corresponding to the power converted by the first semiconductor element 21 flows through the first main surface electrode 212 .
  • the first main surface electrode 212 corresponds to the source electrode of the first semiconductor element 21, for example.
  • the second main surface electrode 213 is located on the same side as the first main surface electrode 212 in the thickness direction z.
  • a control voltage for driving the first semiconductor element 21 is applied to the second main surface electrode 213 .
  • the second main surface electrode 213 is, for example, a gate electrode. As shown in FIG. 3, the area of the second main surface electrode 213 is smaller than the area of the first main surface electrode 212 when viewed in the thickness direction z.
  • the plurality of second semiconductor elements 22 are bonded to the second main surface 121B of the second member 12B, as shown in FIGS. 6, 7, and 9.
  • the plurality of second semiconductor elements 22 are the same elements as the plurality of first semiconductor elements 21. Therefore, the plurality of second semiconductor elements 22 are n-channel type MOSFETs with a vertical structure.
  • the plurality of second semiconductor elements 22 are arranged along the second direction y.
  • the second semiconductor element 22 has a second back electrode 221, a third main surface electrode 222, and a fourth main surface electrode 223.
  • the second back electrode 221 faces the second main surface 121B of the second member 12B. A current corresponding to the power before being converted by the second semiconductor element 22 flows through the second back electrode 221 .
  • the second back electrode 221 is, for example, a drain electrode.
  • the second back electrode 221 is conductively bonded to the second main surface 121B via a conductive bonding layer 291. Therefore, the second back electrodes 221 of the plurality of second semiconductor elements 22 are electrically connected to the second member 12B.
  • the third main surface electrode 222 is located on the opposite side from the second back electrode 221 in the thickness direction z. A current corresponding to the power converted by the second semiconductor element 22 flows through the third main surface electrode 222 .
  • the third main surface electrode 222 is, for example, a source electrode of the second semiconductor element 22.
  • the fourth main surface electrode 223 is located on the same side as the third main surface electrode 222 in the thickness direction z.
  • a control voltage for driving the second semiconductor element 22 is applied to the fourth main surface electrode 223 .
  • the fourth main surface electrode 223 is, for example, a gate electrode. As shown in FIG. 4, the area of the fourth main surface electrode 223 is smaller than the area of the third main surface electrode 222 when viewed in the thickness direction z.
  • the first wiring 15 is located next to the plurality of first semiconductor elements 21 in the first direction x.
  • the first wiring 15 is joined to the first main surface 121A of the first member 12A.
  • the first wiring 15, like the pair of support members 10, is made of a DBC substrate.
  • the first wiring 15 includes a first insulating layer 151, a first gate wiring 152, a first detection wiring 153, and a first support layer 154.
  • the first insulating layer 151 extends in the second direction y. As shown in FIGS. 6 and 7, the first insulating layer 151 is located on the first main surface 121A of the first member 12A.
  • the first insulating layer 151 is made of ceramics containing aluminum nitride, for example.
  • the first gate wiring 152 is arranged on the first insulating layer 151.
  • the first gate wiring 152 is located on the opposite side of the first member 12A with respect to the first insulating layer 151 in the thickness direction z.
  • the first gate wiring 152 extends in the second direction y.
  • the first gate wiring 152 is electrically connected to the second main surface electrodes 213 of the plurality of first semiconductor elements 21 .
  • the composition of the first gate wiring 152 includes copper.
  • the first detection wiring 153 is arranged on the first insulating layer 151.
  • the first detection wiring 153 is located on the opposite side of the plurality of first semiconductor elements 21 with respect to the first gate wiring 152 in the first direction x. Further, the first detection wiring 153 is located on the same side as the first gate wiring 152 with respect to the first insulating layer 151 in the thickness direction z.
  • the first detection wiring 153 extends in the second direction y.
  • the first detection wiring 153 is electrically connected to the first main surface electrodes 212 of the plurality of first semiconductor elements 21 .
  • the composition of the first detection wiring 153 includes copper.
  • the first support layer 154 has a first support layer 154 located on the opposite side of the first gate wiring 152 and the first detection wiring 153 with respect to the first insulating layer 151 in the thickness direction z.
  • the first support layer 154 is bonded to the first main surface 121A of the first member 12A via, for example, a brazing material.
  • the composition of the first support layer 154 includes copper.
  • each of the plurality of first wires 41 is electrically connected to the second main surface electrode 213 of one of the plurality of first semiconductor elements 21 and the first gate wiring 152 of the first wiring 15. has been done. Thereby, the second main surface electrodes 213 of the plurality of first semiconductor elements 21 are electrically connected to the first gate wiring 152.
  • the composition of the plurality of first wires 41 includes aluminum (Al). In addition, the composition of the plurality of first wires 41 may include copper (Cu) or gold (Au).
  • each of the plurality of second wires 42 is electrically connected to the first main surface electrode 212 of any one of the plurality of first semiconductor elements 21 and the first detection wiring 153 of the first wiring 15. has been done. Thereby, the first main surface electrodes 212 of the plurality of first semiconductor elements 21 are electrically connected to the first detection wiring 153.
  • the composition of the plurality of second wires 42 includes aluminum (Al). In addition, the composition of the plurality of second wires 42 may include copper (Cu) or gold (Au).
  • the first gate terminal 171 is located next to the first member 12A in the second direction y, as shown in FIGS. 2 and 3.
  • the first gate terminal 171 is electrically connected to the first gate wiring 152 of the first wiring 15 .
  • the first gate terminal 171 is a metal lead made of a material containing copper or a copper alloy.
  • a portion of the first gate terminal 171 is covered with a sealing resin 50.
  • the first gate terminal 171 has an L-shape when viewed in the first direction x.
  • the first gate terminal 171 includes a portion that stands up in the thickness direction z. The portion is exposed to the outside from the sealing resin 50.
  • a gate voltage for driving the plurality of first semiconductor elements 21 is applied to the first gate terminal 171 .
  • the first detection terminal 181 is located next to the first gate terminal 171 in the first direction x, as shown in FIGS. 2 and 3.
  • the first detection terminal 181 is electrically connected to the first detection wiring 153 of the first wiring 15 .
  • the first detection terminal 181 is a metal lead made of a material containing copper or a copper alloy.
  • a portion of the first detection terminal 181 is covered with a sealing resin 50.
  • the first detection terminal 181 is L-shaped when viewed in the first direction x.
  • the first detection terminal 181 includes a portion that stands up in the thickness direction z. The portion is exposed to the outside from the sealing resin 50.
  • a voltage having the same potential as the voltage applied to the first main surface electrodes 212 of the plurality of first semiconductor elements 21 is applied to the first detection terminal 181 .
  • the second wiring 16 is located next to the plurality of second semiconductor elements 22 in the first direction x.
  • the second wiring 16 is joined to the second main surface 121B of the second member 12B.
  • the second wiring 16 like the first wiring 15, is made of a DBC substrate.
  • the second wiring 16 includes a second insulating layer 161, a second gate wiring 162, a second detection wiring 163, and a second support layer 164.
  • the second insulating layer 161 extends in the second direction y. As shown in FIGS. 6 and 7, the second insulating layer 161 is located on the second main surface 121B of the second member 12B.
  • the second insulating layer 161 is made of ceramics containing aluminum nitride, for example.
  • the second gate wiring 162 is arranged on the second insulating layer 161.
  • the second gate wiring 162 is located on the opposite side of the second member 12B with respect to the first insulating layer 151 in the thickness direction z.
  • the second gate wiring 162 extends in the second direction y.
  • the second gate wiring 162 is electrically connected to the fourth main surface electrodes 223 of the plurality of second semiconductor elements 22 .
  • the composition of the second gate wiring 162 includes copper.
  • the second detection wiring 163 is arranged on the second insulating layer 161.
  • the second detection wiring 163 is located on the opposite side of the plurality of second semiconductor elements 22 with respect to the second gate wiring 162 in the first direction x. Further, the second detection wiring 163 is located on the same side as the second gate wiring 162 with respect to the second insulating layer 161 in the thickness direction z.
  • the second detection wiring 163 extends in the second direction y.
  • the second detection wiring 163 is electrically connected to the third main surface electrodes 222 of the plurality of second semiconductor elements 22 .
  • the composition of the second detection wiring 163 includes copper.
  • the second support layer 164 has a second support layer 164 located on the opposite side of the second gate wiring 162 and the second detection wiring 163 with respect to the second insulating layer 161 in the thickness direction z.
  • the second support layer 164 is bonded to the second main surface 121B of the second member 12B via, for example, a brazing material.
  • the composition of the second support layer 164 includes copper.
  • each of the plurality of third wires 43 is electrically connected to the fourth main surface electrode 223 of one of the plurality of second semiconductor elements 22 and the second gate wiring 162 of the second wiring 16. has been done. Thereby, the fourth main surface electrode 223 of the second semiconductor element 22 is electrically connected to the second gate wiring 162.
  • the composition of the plurality of third wires 43 includes aluminum (Al).
  • the composition of the plurality of third wires 43 may include copper (Cu) or gold (Au).
  • each of the plurality of fourth wires 44 is electrically connected to the third main surface electrode 222 of any one of the plurality of second semiconductor elements 22 and the second detection wiring 163 of the second wiring 16. has been done. Thereby, the third main surface electrodes 222 of the plurality of second semiconductor elements 22 are electrically connected to the second detection wiring 163.
  • the composition of the plurality of fourth wires 44 includes aluminum (Al). In addition, the composition of the plurality of fourth wires 44 may include copper (Cu) or gold (Au).
  • the second gate terminal 172 is located next to the second member 12B in the second direction y, as shown in FIGS. 2 and 3.
  • the second gate terminal 172 is located on the same side as the first gate terminal 171 with respect to the support member 10 in the second direction y.
  • the second gate terminal 172 is electrically connected to the second gate wiring 162 of the second wiring 16 .
  • the second gate terminal 172 is a metal lead made of a material containing copper or a copper alloy.
  • a portion of the second gate terminal 172 is covered with a sealing resin 50.
  • the second gate terminal 172 has an L-shape when viewed in the first direction x.
  • the second gate terminal 172 includes a portion that stands up in the thickness direction z. The portion is exposed to the outside from the sealing resin 50.
  • a gate voltage for driving the plurality of second semiconductor elements 22 is applied to the second gate terminal 172.
  • the second detection terminal 182 is located next to the second gate terminal 172 in the first direction x, as shown in FIGS. 2 and 3.
  • the second detection terminal 182 is electrically connected to the second detection wiring 163 of the second wiring 16 .
  • the second detection terminal 182 is a metal lead made of a material containing copper or a copper alloy. As shown in FIG. 4, a portion of the second detection terminal 182 is covered with the sealing resin 50.
  • the second detection terminal 182 is L-shaped when viewed in the first direction x. As shown in FIG. 4, the second detection terminal 182 includes a portion that stands up in the thickness direction z. The portion is exposed to the outside from the sealing resin 50.
  • a voltage having the same potential as the voltage applied to the third main surface electrodes 222 of the plurality of second semiconductor elements 22 is applied to the second detection terminal 182 .
  • the plurality of fifth wires 45 are individually electrically connected to the first gate terminal 171 and the first detection terminal 181, and the first gate wiring 152 and the first detection wiring 153 of the first wiring 15. has been done.
  • the first gate terminal 171 is electrically connected to the second main surface electrodes 213 of the plurality of first semiconductor elements 21 via the first gate wiring 152.
  • the first detection terminal 181 is electrically connected to the first main surface electrode 212 of the plurality of first semiconductor elements 21 via the first detection wiring 153 .
  • the plurality of fifth wires 45 are individually conductive to the second gate terminal 172 and the second detection terminal 182, and the second gate wiring 162 and the second detection wiring 163 of the second wiring 16. It is joined. Thereby, the second gate terminal 172 is electrically connected to the fourth main surface electrode 223 of the plurality of second semiconductor elements 22 via the second gate wiring 162. The second detection terminal 182 is electrically connected to the third main surface electrode 222 of the plurality of second semiconductor elements 22 via the second detection wiring 163.
  • the composition of the plurality of fifth wires 45 includes aluminum (Al). In addition, the composition of the plurality of fifth wires 45 may include copper (Cu) or gold (Au).
  • the semiconductor device A10 further includes four dummy terminals 19, as shown in FIGS. 2 and 3. Two of the four dummy terminals 19 are located on the opposite side of the first gate terminal 171 with respect to the first detection terminal 181 in the first direction x. The remaining two dummy terminals 19 are located on the opposite side of the second gate terminal 172 with respect to the second detection terminal 182 in the first direction x.
  • the plurality of dummy terminals 19 are metal leads made of a material containing copper or a copper alloy.
  • the shape of each of the plurality of dummy terminals 19 is equal to the shape of the first gate terminal 171. A portion of each of the plurality of dummy terminals 19 is covered with sealing resin. The portions of the plurality of dummy terminals 19 that stand up in the thickness direction z are exposed to the outside from the sealing resin 50.
  • the first conductive member 31 is located on the opposite side of the plurality of second semiconductor elements 22 with respect to the plurality of first semiconductor elements 21 in the first direction x.
  • the first conductive member 31 has a first terminal portion 311 and a first pillow material 312.
  • the first terminal portion 311 is electrically conductively bonded to the first main surface 121A of the first member 12A via the first pillow material 312. Therefore, the first terminal portion 311 is located away from the first member 12A in the thickness direction z.
  • the first terminal portion 311 overlaps the first member 12A when viewed in the thickness direction z.
  • the composition of the first terminal portion 311 includes copper (Cu).
  • the first conductive member 31 is electrically connected to the first member 12A. Furthermore, the first conductive member 31 is electrically connected to the first back electrodes 211 of the plurality of first semiconductor elements 21 via the first member 12A.
  • the first terminal portion 311 is a P terminal (positive electrode) to which a DC power supply voltage to be subjected to power conversion is applied.
  • a first attachment hole 311A is provided in a portion of the first terminal portion 311 that is exposed to the outside from the sealing resin 50.
  • the first attachment hole 311A penetrates the first terminal portion 311 in the thickness direction z.
  • each of the plurality of fourth conductive members 14 is connected to the first main surface electrode 212 of any one of the plurality of first semiconductor elements 21.
  • the second member 12B is electrically conductively bonded to the second main surface 121B via a conductive bonding layer 292, respectively.
  • the fourth conductive member 14 has a connecting portion 141.
  • the connecting portion 141 is located at the end of the fourth conductive member 14 in the first direction x.
  • the connecting portion 141 is a portion where the dimension in the thickness direction z is locally large.
  • the connecting portion 141 is electrically connected to the first main surface electrode 212 by a conductive bonding layer 292 .
  • the second member 12B is electrically connected to the first main surface electrodes 212 of the plurality of first semiconductor elements 21.
  • the plurality of fourth conductive members 14 extend in the first direction x.
  • the composition of the plurality of fourth conductive members 14 includes copper (Cu).
  • the plurality of first positioning members 71 are arranged between the first main surface electrode 212 and the connection portion 141 of the fourth conductive member 14.
  • the plurality of first positioning members 71 are in contact with the first main surface electrode 212 and the connecting portion 141.
  • the plurality of first positioning members 71 overlap the connecting portion 141 when viewed in the thickness direction z.
  • the specific configuration of the first positioning member 71 is not limited at all.
  • the first positioning member 71 is preferably made of a conductive material.
  • the first positioning member 71 contains metal as a main component, such as aluminum (Al), copper (Cu), and the like.
  • the first positioning member 71 is made of a piece of wire.
  • a wire piece in the present disclosure is formed by partially cutting a wire material.
  • the first positioning member 71 is made of the same components as the first wire 41 and the second wire 42.
  • the first positioning member 71 has the same cross-sectional area as the first wire 41 and the second wire 42 .
  • the first positioning member 71 is made of a part of a wire material having a wire diameter of 100 ⁇ m or more and 500 ⁇ m or less, for example, and is a part of a wire material having a wire diameter of 125 ⁇ m or 150 ⁇ m.
  • the number of the plurality of first positioning members 71 is not limited at all.
  • the semiconductor device A10 includes four first positioning members 71.
  • the four first positioning members 71 are distinguished as first positioning members 711, 712, 713, and 714.
  • the first positioning member 711 and the first positioning member 712 and the first positioning member 713 and the first positioning member 714 are spaced apart from each other in the first direction x. Further, the first positioning member 711 and the first positioning member 713 and the first positioning member 712 and the first positioning member 714 are spaced apart from each other in the second direction y. In the illustrated example, each of the plurality of first positioning members 71 has a shape along the first direction x.
  • the plurality of second positioning members 72 are arranged on the first main surface electrode 212, and are adjacent to the connection portion 141 of the fourth conductive member 14 when viewed in the thickness direction z. are doing.
  • the size of the plurality of second positioning members 72 in the thickness direction z is larger than the distance between the first main surface electrode 212 and the connecting portion 141.
  • the difference between the size of the second positioning member 72 in the thickness direction z and the distance between the first main surface electrode 212 and the connecting portion 141 is, for example, 100 ⁇ m or more and 300 ⁇ m or less.
  • the plurality of second positioning members 72 are in contact with the conductive bonding layer 292, but the plurality of second positioning members 72 do not necessarily have to be in contact with the conductive bonding layer 292.
  • the specific configuration of the second positioning member 72 is not limited at all.
  • the second positioning member 72 is preferably made of a conductive material.
  • the second positioning member 72 contains metal as a main component, such as aluminum (Al), copper (Cu), and the like.
  • the second positioning member 72 is configured by a piece of wire.
  • the second positioning member 72 may be made of the same component as the first wire 41 and the second wire 42.
  • the second positioning member 72 is made of, for example, a portion of a wire material having a larger wire diameter than the wire material used for the first positioning member 71.
  • the number of the plurality of second positioning members 72 is not limited at all.
  • the semiconductor device A10 includes six second positioning members 72.
  • the six second positioning members 72 are distinguished as second positioning members 721, 722, 723, 724, 725, and 726.
  • the second positioning member 721 and the second positioning member 723 and the second positioning member 722 and the second positioning member 724 are spaced apart from each other in the second direction y with the connecting portion 141 in between. Furthermore, the second positioning member 725 and the second positioning member 726 are spaced apart from each other in the first direction x with the connecting portion 141 in between.
  • the second conductive member 32 straddles between the first member 12A and the second member 12B, and also connects the first member 12A and the second member in the thickness direction z. It is located away from 12B.
  • the composition of the second conductive member 32 includes copper (Cu).
  • the second conductive member 32 includes a second terminal portion 321 , a plurality of connecting portions 322 , a first connecting portion 323 , and a second connecting portion 324 .
  • each of the plurality of connection parts 322 is conductively bonded to the third main surface electrode 222 of any one of the plurality of second semiconductor elements 22 via the conductive bonding layer 292. ing.
  • the plurality of connecting portions 322 have a locally large portion in the thickness direction z, and have a shape extending in the first direction x.
  • the plurality of first positioning members 73 are arranged between the third main surface electrode 222 and the connecting portion 322 of the second conductive member 32.
  • the plurality of first positioning members 73 are in contact with the third main surface electrode 222 and the connecting portion 322.
  • the plurality of first positioning members 73 overlap the connecting portion 322 when viewed in the thickness direction z.
  • the specific configuration of the first positioning member 73 is not limited at all.
  • the first positioning member 73 is preferably made of a conductive material.
  • the first positioning member 73 contains metal as a main component, such as aluminum (Al), copper (Cu), and the like.
  • the first positioning member 73 is made of a piece of wire.
  • the first positioning member 73 is made of the same components as the third wire 43 and the fourth wire 44.
  • the first positioning member 73 has the same cross-sectional area as the third wire 43 and the fourth wire 44 .
  • the first positioning member 73 is made of a part of a wire material having a wire diameter of 100 ⁇ m or more and 500 ⁇ m or less, for example, and is a part of a wire material having a wire diameter of 125 ⁇ m or 150 ⁇ m.
  • the number of the plurality of first positioning members 73 is not limited at all.
  • the semiconductor device A10 includes four first positioning members 73.
  • the four first positioning members 73 are distinguished as first positioning members 731, 732, 733, and 734.
  • the first positioning member 731 and the first positioning member 732 and the first positioning member 733 and the first positioning member 734 are spaced apart from each other in the first direction x. Further, the first positioning member 731 and the first positioning member 733 and the first positioning member 732 and the first positioning member 734 are spaced apart from each other in the second direction y. In the illustrated example, each of the plurality of first positioning members 73 has a shape along the first direction x.
  • the plurality of second positioning members 74 are arranged on the third main surface electrode 222, and are adjacent to the connecting portion 322 of the second conductive member 32 when viewed in the thickness direction z. are doing.
  • the size of the plurality of second positioning members 74 in the thickness direction z is larger than the distance between the third main surface electrode 222 and the connection portion 322.
  • the difference between the size of the second positioning member 74 in the thickness direction z and the distance between the third main surface electrode 222 and the connecting portion 322 is, for example, 100 ⁇ m or more and 300 ⁇ m or less.
  • the plurality of second positioning members 74 are in contact with the conductive bonding layer 292, but the plurality of second positioning members 74 do not necessarily have to be in contact with the conductive bonding layer 292.
  • the specific configuration of the second positioning member 74 is not limited at all.
  • the second positioning member 74 is preferably made of a conductive material.
  • the second positioning member 74 contains metal as a main component, such as aluminum (Al), copper (Cu), and the like.
  • the second positioning member 74 is configured by a piece of wire.
  • the second positioning member 74 may be made of the same component as the third wire 43 and the fourth wire 44.
  • the second positioning member 74 is made of, for example, a portion of a wire material having a larger wire diameter than the wire material used for the first positioning member 73.
  • the number of the plurality of second positioning members 74 is not limited at all.
  • the semiconductor device A10 includes six second positioning members 74.
  • the six second positioning members 74 are distinguished as second positioning members 741, 742, 743, 744, 745, and 746.
  • the second positioning member 741 and the second positioning member 743 and the second positioning member 742 and the second positioning member 744 are spaced apart from each other in the second direction y with the connecting portion 322 in between. Further, the second positioning member 745 and the second positioning member 746 are spaced apart from each other in the first direction x with the connecting portion 322 in between.
  • the first connecting portion 323 extends in the second direction y.
  • the plurality of connecting parts 322 are connected to a first connecting part 323.
  • the second connecting portion 324 is located on the opposite side of the plurality of connecting portions 322 with respect to the first connecting portion 323 in the first direction x.
  • the second connecting portion 324 is connected to the first connecting portion 323.
  • the second connecting portion 324 extends in the first direction x.
  • the first connecting portion 323 and the second connecting portion 324 overlap the first member 12A. Therefore, when viewed in the thickness direction z, the second conductive member 32 overlaps the first member 12A.
  • the second terminal portion 321 is located on the opposite side of the plurality of second semiconductor elements 22 with respect to the plurality of first semiconductor elements 21 in the first direction x.
  • the second terminal portion 321 is located away from the first terminal portion 311 in the second direction y.
  • the second terminal portion 321 is located away from the first member 12A in the thickness direction z.
  • the composition of the second terminal portion 321 includes copper.
  • the second terminal portion 321 is connected to the second connecting portion 324 of the second conductive member 32. Therefore, the second conductive member 32 is electrically connected to the third main surface electrodes 222 of the plurality of second semiconductor elements 22 .
  • the second terminal portion 321 is an N terminal (negative electrode) to which a DC power supply voltage to be subjected to power conversion is applied.
  • a second attachment hole 321A is provided in a portion of the second terminal portion 321 that is exposed to the outside from the sealing resin 50.
  • the second attachment hole 321A penetrates the second terminal portion 321 in the thickness direction z.
  • the third conductive member 33 connects the first conductive member 31 and the second terminal portion 321 of the second conductive member 32 with respect to the plurality of first semiconductor elements 21 in the first direction x. located on the opposite side.
  • the third conductive member 33 has a third terminal portion 331 and a second pillow material 332.
  • the third terminal portion 331 is electrically conductively bonded to the second main surface 121B of the second member 12B via the second pillow material 332. Therefore, the third terminal portion 331 is located away from the second member 12B in the thickness direction z.
  • the composition of the third terminal portion 331 includes copper.
  • the third conductive member 33 is electrically connected to the second member 12B. Further, the third conductive member 33 is electrically connected to the second back electrodes 221 of the plurality of second semiconductor elements 22 via the second member 12B. The AC power converted by the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 is output from the third terminal section 331.
  • a portion of the third terminal portion 331 is exposed to the outside from the sealing resin 50.
  • a third attachment hole 331A is provided in a portion of the third terminal portion 331 that is exposed to the outside from the sealing resin 50.
  • the third attachment hole 331A penetrates the third terminal portion 331 in the thickness direction z.
  • the sealing resin 50 covers the two conductive members 12, the first wiring 15, the second wiring 16, the plurality of first semiconductor elements 21, and the plurality of second semiconductor elements 22. There is. Further, the sealing resin 50 connects the first conductive member 31, the second conductive member 32, the third conductive member 33, the first gate terminal 171, the second gate terminal 172, the first detection terminal 181, the second detection terminal 182, and A portion of each of the plurality of dummy terminals 19 is covered.
  • the sealing resin 50 has electrical insulation properties.
  • the sealing resin 50 is made of a material containing, for example, a black epoxy resin. As shown in FIG. 5, the sealing resin 50 has a top surface 51, a bottom surface 52, two first side surfaces 53, and two second side surfaces 54.
  • the top surface 51 faces the same side as the first main surface 121A of the first member 12A in the thickness direction z.
  • the bottom surface 52 faces opposite to the top surface 51 in the thickness direction z.
  • a portion of the heat dissipation layer 103 of the support member 10 is exposed from the bottom surface 52.
  • the two first side surfaces 53 are located apart from each other in the first direction x, and are connected to the top surface 51 and the bottom surface 52.
  • a portion of each of the first terminal portion 311 of the first conductive member 31 and the second terminal portion 321 of the second conductive member 32 is exposed to the outside from one of the two first side surfaces 53. are doing.
  • a portion of the third terminal portion 331 of the third conductive member 33 is exposed to the outside from the other of the two first side surfaces 53 .
  • the two second side surfaces 54 are located apart from each other in the second direction y, and are connected to the top surface 51 and the bottom surface 52.
  • the first gate terminal 171, the second gate terminal 172, the first detection terminal 181, the second detection terminal 182, and each of the plurality of dummy terminals 19 are connected from one of the two second side surfaces 54. part is exposed to the outside.
  • the first semiconductor element 21 is mounted on the first main surface 121A.
  • the wire material 40 is then bonded to the first main surface electrode 212.
  • a wedge tool Wg is used to join the wire material 40.
  • a portion of the wire material 40 is pressed against the first main surface electrode 212 by a wedge tool Wg.
  • the wedge tool Wg is moved and the wire material 40 is cut by the cutting tool Ct.
  • the second wire 42 is formed as shown in FIG. 19.
  • a plurality of first positioning members 71 are formed using the wire material 40. After pressing a portion of the wire material 40 to the position where the first positioning member 71 is to be formed, the wire material 40 is cut by the cutting tool Ct. Thereby, as shown in FIG. 20, a plurality of first positioning members 71 are formed at predetermined positions. Note that the cross-sectional shape of the first positioning member 71 shown in FIG. 13 is formed by pressing the wire material 40 with the wedge tool Wg. Further, a plurality of second positioning members 72 are formed using a wire material having a larger wire diameter than the wire material 40 by the same procedure as the plurality of first positioning members 71.
  • a conductive bonding material 290 is applied to the first main surface electrode 212.
  • the conductive bonding material 290 is, for example, a solder paste.
  • the connecting portion 141 of the fourth conductive member 14 is attached to the conductive bonding material 290.
  • the connecting portion 141 is brought close to the first semiconductor element 21 in the thickness direction z, and the connecting portion 141 and the plurality of first positioning members 71 are brought into contact with each other.
  • the conductive bonding material 290 is cured using, for example, a reflow oven or the like to form conductive bonding layers 291 and 292. Then, by forming the sealing resin 50, etc., the semiconductor device A10 is obtained.
  • the first positioning member 71 is interposed between the first main surface electrode 212 and the connecting portion 141.
  • the first positioning member 71 is in contact with the first main surface electrode 212 and the connecting portion 141 .
  • the semiconductor device A10 includes a plurality of first positioning members 71. Thereby, the thickness of the conductive bonding layer 292 can be more reliably made uniform.
  • the first positioning member 711 and the first positioning member 712 and the first positioning member 713 and the first positioning member 714 are spaced apart from each other in the first direction x. Thereby, it is possible to more reliably suppress the connection portion 141 (fourth conductive member 14) from tilting around the axis extending in the second direction y.
  • the first positioning member 711 and the first positioning member 713 and the first positioning member 712 and the first positioning member 714 are spaced apart from each other in the second direction y. Thereby, it is possible to more reliably prevent the connecting portion 141 (fourth conductive member 14) from tilting around the axis extending in the first direction x.
  • the plurality of first positioning members 71 have metal as a main component. Thereby, a decrease in electrical resistance between the first main surface electrode 212 and the fourth conductive member 14 can be avoided.
  • the plurality of first positioning members 71 are made of wire pieces. Thereby, the plurality of first positioning members 71 can be formed using the wedge tool Wg or the like. As shown in FIGS. 18 and 19, forming the plurality of first positioning members 71 using the wire material 40 for forming the second wire 42 and the like is preferable for improving the manufacturing efficiency of the semiconductor device A10.
  • a plurality of second positioning members 72 are arranged adjacent to the connecting portion 141.
  • the second positioning member 721 and the second positioning member 723 and the second positioning member 722 and the second positioning member 724 are separated from each other in the second direction y with the connecting portion 141 in between. Thereby, the position of the connecting portion 141 in the second direction y can be defined more accurately.
  • the second positioning member 725 and the second positioning member 726 are separated from each other in the first direction x with the connecting portion 141 in between. Thereby, the position of the connecting portion 141 in the first direction x can be defined more accurately.
  • the plurality of second positioning members 72 can be formed using a wedge tool Wg or the like.
  • the second positioning member 74 is arranged on one side of the first direction x of any of the connecting parts 322, and By arranging the second positioning member 74 on the other side of the connecting portion 322 in the first direction x, it is possible to define the position of the entire second conductive member 32 in the first direction x.
  • FIG. 23 shows a first modification of the semiconductor device A10.
  • the specific configuration of the plurality of first positioning members 71 is different from the plurality of first positioning members 71 of the semiconductor device A10.
  • the plurality of first positioning members 71 have a shape along the second direction y.
  • the plurality of first positioning members 71 having such a shape can be formed by setting the orientation of the wedge tool Wg shown in FIGS. 18 and 19.
  • the thickness of the conductive bonding layer 292 can be made more uniform.
  • the specific shape of the plurality of first positioning members 71 is not limited at all, and the same applies to the plurality of first positioning members 73.
  • FIG. 24 shows a second modification of the semiconductor device A10.
  • the semiconductor device A12 of this modification differs from the plurality of first positioning members 71 of the semiconductor device A10 in the number and arrangement of the plurality of first positioning members 71.
  • the number of the plurality of first positioning members 71 is three.
  • the first positioning member 711 and the first positioning member 712 are arranged apart from each other in the second direction y.
  • the first positioning member 713 is spaced apart from the first positioning member 711 and the first positioning member 712 in the first direction x. In the second direction y, the first positioning member 713 is located between the first positioning member 711 and the first positioning member 712.
  • the thickness of the conductive bonding layer 292 can be made more uniform.
  • the number of first positioning members 71 is not limited at all, and the same applies to the plurality of first positioning members 73. By using the three first positioning members 71, it is possible to support the connecting portion 141 at three points. Thereby, the thickness of the conductive bonding layer 292 can be made uniform.
  • FIG. 25 shows a third modification of the semiconductor device A10.
  • the semiconductor device A13 of this modification differs from the plurality of second positioning members 72 of the semiconductor device A10 in the number and arrangement of the plurality of second positioning members 72.
  • the number of the plurality of second positioning members 72 is four.
  • the second positioning member 721 and the second positioning member 722 are separated from each other in the second direction y with the connecting portion 141 in between.
  • the thickness of the conductive bonding layer 292 can be made more uniform. Furthermore, the second positioning member 721 and the second positioning member 722 can more accurately define the position of the connecting portion 141 in the second direction y. As understood from this modification, the number of second positioning members 72 is not limited at all, and the same applies to the second positioning members 74.
  • FIG. 26 shows a fourth modification of the semiconductor device A10.
  • the specific configuration of the plurality of second positioning members 72 is different from the plurality of second positioning members 72 of the semiconductor device A10.
  • the second positioning member 72 includes a first part 7211 and a second part 7212.
  • the first portion 7211 is in contact with the first main surface electrode 212.
  • the second part 7212 is arranged on the first part 7211.
  • the first portion 7211 and the second portion 7212 are formed, for example, by a portion of the wire material 40 used to form the first positioning member 71. Therefore, for example, the cross-sectional area of the first positioning member 71, the cross-sectional area of the first portion 7211, and the cross-sectional area of the second portion 7212 are the same.
  • the thickness of the conductive bonding layer 292 can be made more uniform. Furthermore, it is possible to form the first positioning member 71 and the second positioning member 72 using the same wire material 40. Thereby, manufacturing efficiency of the semiconductor device A14 can be improved.
  • FIG. 27 shows a semiconductor device according to a second embodiment of the present disclosure.
  • the semiconductor device A20 of this embodiment is different from the above-described embodiments in the configuration of the fourth conductive member 14.
  • the fourth conductive member 14 of this modification is formed, for example, by partially bending a metal plate material having a constant thickness.
  • the connecting portion 141 is located closer to the first principal surface electrode 212 in the thickness direction z than adjacent portions.
  • the thickness of the conductive bonding layer 292 can be made more uniform.
  • the specific configuration of the fourth conductive member 14 is not limited at all, and the same applies to the second conductive member 32.
  • FIG. 27 shows a semiconductor device according to a third embodiment of the present disclosure.
  • the semiconductor device A30 of this embodiment does not include the plurality of second positioning members 72 described above. Such an embodiment also allows the thickness of the conductive bonding layer 292 to be made more uniform.
  • the semiconductor device and the method for manufacturing a semiconductor device according to the present disclosure are not limited to the embodiments described above.
  • the specific configurations of the semiconductor device and the method of manufacturing the semiconductor device according to the present disclosure can be modified in various designs.
  • the present disclosure includes the embodiments described in the appendix below.
  • a semiconductor element having a first main surface electrode; A conductive member; a conductive bonding layer that electrically connects the first main surface electrode and the conductive member;
  • a semiconductor device comprising: a first positioning member disposed between the first main surface electrode and the conductive member and in contact with the first main surface electrode and the conductive member.
  • Appendix 2. The semiconductor device according to appendix 1, wherein the first positioning member is in contact with the conductive bonding layer.
  • Appendix 3. The semiconductor device according to appendix 2, wherein the first positioning member has metal as a main component.
  • the semiconductor device comprising a plurality of the first positioning members.
  • Appendix 6 The semiconductor device according to appendix 5, wherein the plurality of first positioning members include two first positioning members spaced apart from each other in a first direction perpendicular to a thickness direction of the semiconductor element.
  • Appendix 7. The semiconductor device according to appendix 6, wherein the plurality of first positioning members include two first positioning members spaced apart from each other in the thickness direction and a second direction perpendicular to the first direction.
  • the semiconductor element includes a second main surface electrode disposed on the same side as the first main surface electrode in the thickness direction; The semiconductor device according to appendix 6, further comprising a first wire bonded to the second main surface electrode.
  • Appendix 10. The semiconductor device according to appendix 9, wherein the first positioning member and the first wire have the same cross-sectional area.
  • Appendix 11. The semiconductor device according to any one of appendices 8 to 10, further comprising a second wire electrically connected to the semiconductor element.
  • Appendix 12. The semiconductor device according to appendix 11, wherein the first positioning member and the second wire are made of the same component.
  • Appendix 13 The semiconductor device according to appendix 12, wherein the first positioning member and the second wire have the same cross-sectional area.
  • the first main surface electrode is a source electrode, 14.
  • the semiconductor device according to any one of appendices 8 to 13, wherein the second main surface electrode is a gate electrode.
  • Appendix 15. The conductive member is disposed on the first main surface electrode, is adjacent to the conductive member when viewed in the thickness direction of the semiconductor element, and has a size in the thickness direction that is equal to that of the first main surface electrode and the conductive member. 15.
  • the semiconductor device according to any one of Supplementary Notes 1 to 14, further comprising a second positioning member having a distance greater than the distance from the second positioning member.
  • Appendix 16 The semiconductor device according to appendix 15, wherein the second positioning member is a piece of wire.
  • Appendix 17. The semiconductor device according to appendix 15 or 16, comprising a plurality of the second positioning members. Appendix 18.
  • a method for manufacturing a semiconductor device comprising the step of electrically bonding the first principal surface electrode and the conductive member by curing the conductive bonding material.

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PCT/JP2023/028284 2022-09-02 2023-08-02 半導体装置、および、半導体装置の製造方法 Ceased WO2024048187A1 (ja)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005236019A (ja) * 2004-02-19 2005-09-02 Fuji Electric Holdings Co Ltd 半導体装置の製造方法
JP2015076511A (ja) * 2013-10-09 2015-04-20 株式会社日立製作所 半導体装置およびその製造方法
JP2018019000A (ja) * 2016-07-29 2018-02-01 株式会社ケーヒン パワー半導体モジュール

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005236019A (ja) * 2004-02-19 2005-09-02 Fuji Electric Holdings Co Ltd 半導体装置の製造方法
JP2015076511A (ja) * 2013-10-09 2015-04-20 株式会社日立製作所 半導体装置およびその製造方法
JP2018019000A (ja) * 2016-07-29 2018-02-01 株式会社ケーヒン パワー半導体モジュール

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