WO2024045384A1 - Led衬底用超薄蓝宝石晶片的切割方法 - Google Patents

Led衬底用超薄蓝宝石晶片的切割方法 Download PDF

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WO2024045384A1
WO2024045384A1 PCT/CN2022/135603 CN2022135603W WO2024045384A1 WO 2024045384 A1 WO2024045384 A1 WO 2024045384A1 CN 2022135603 W CN2022135603 W CN 2022135603W WO 2024045384 A1 WO2024045384 A1 WO 2024045384A1
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cutting
storage tank
liquid storage
wafer
cutting fluid
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French (fr)
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张芹
康森
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天通控股股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08—Macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M173/00—Lubricating compositions containing more than 10% water
    • C10M173/02—Lubricating compositions containing more than 10% water not containing mineral or fatty oils
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2201/00—Inorganic compounds or elements as ingredients in lubricant compositions
    • C10M2201/08—Inorganic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
    • C10M2209/02—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C10M2209/04—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds containing monomers having an unsaturated radical bound to an alcohol or ester thereof; bound to an aldehyde, ketonic, ether, ketal or acetal radical
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
    • C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
    • C10M2209/104—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of alkylene oxides containing two carbon atoms only
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2219/00—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions
    • C10M2219/04—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions containing sulfur-to-oxygen bonds, i.e. sulfones, sulfoxides
    • C10M2219/042—Sulfate esters
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2229/00—Organic macromolecular compounds containing atoms of elements not provided for in groups C10M2205/00, C10M2209/00, C10M2213/00, C10M2217/00, C10M2221/00 or C10M2225/00 as ingredients in lubricant compositions
    • C10M2229/04—Siloxanes with specific structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

Definitions

  • the present application belongs to the field of sapphire crystal materials for LED substrates, and in particular relates to a cutting method of ultra-thin sapphire wafers.
  • Sapphire crystal is the most important substrate material for LED products due to its excellent thermal conductivity, wear resistance, high temperature stability and other characteristics.
  • Sapphire LED substrates are mainly used to grow LED epitaxial materials and make gallium nitride (GaN) based materials.
  • GaN gallium nitride
  • the thickness of the GaN layer is generally below 10 ⁇ m, so the thickness control of the sapphire substrate is also very strict to meet the manufacturing needs of small LED devices.
  • the Mohs hardness of sapphire is 9, second only to diamond, and its cutting is difficult. Especially when the thickness of the cutting wafer is thin, the fragmentation rate is high.
  • the thickness of the wafer obtained by cutting is generally 600 to 800 ⁇ m, and subsequent needs It is ground and thinned to within 200 ⁇ m before the LED substrate is produced. Therefore, more raw materials need to be ground, making the utilization efficiency of sapphire crystal ingots low. Therefore, it is very necessary to develop a high-quality and high-efficiency sapphire crystal rod.
  • the ultra-thin sapphire wafer cutting method is beneficial to its application in LED substrates.
  • the sapphire crystal rod has a cylindrical structure, with the largest cutting area in the middle and small cutting areas at both ends.
  • the cutting of the crystal rod is very unstable at this time, especially during the cutting process of ultra-thin sapphire wafers. Due to the small thickness of the wafer, it is more likely to cause unstable cutting, resulting in warping, bending, damage and fracture of the ultra-thin wafer. .
  • the patent application with publication number CN110076919A discloses a sapphire crystal ingot immersed multi-wire cutting device and method.
  • the entire cutting device is immersed in a cutting fluid storage tank to avoid unstable tension of the diamond cutting wire caused by the spraying of cutting fluid. It is beneficial to heat dissipation, but during the cutting process, cutting powder will continue to fall into the liquid or the sheave, which will affect the stable transmission of the sheave and easily cause tension fluctuations in the cutting line. At the same time, long-term immersion in liquid will also cause corrosion of the device.
  • the Chinese patent with announcement number CN110733140B discloses a sapphire wafer cutting equipment and process. It mainly uses a cutter for cutting, and can only cut one wafer at a time. It requires repeated operations to cut a crystal rod. The cutting efficiency is low, and Ultra-thin wafers are prone to breakage when cutting.
  • the patent application with announcement number CN103448153B discloses a cutting process for sapphire crystal rods and a processing jig.
  • the processing jig is provided with multiple arc-shaped grooves that can accommodate crystal rods, and is suitable for crystal rods with a diameter of less than 12 mm. , mainly to achieve the purpose of cutting multiple crystal ingots at one time. It is aimed at small-sized crystal ingots. It is not known whether it has a stabilizing effect on the wafers at the end of cutting large-sized ingots.
  • the utility model with the publication number CN202726719U discloses a sapphire crystal ingot positioning surface orientation processing fixture. Its main purpose is to flexibly clamp and orient the crystal ingot during the positioning process. During cutting, the crystal ingot needs to be removed from the fixture. , does not involve cutting stability.
  • the existing technology lacks a cutting method for obtaining ultra-thin sapphire wafers for high-quality LED substrates.
  • this application proposes a cutting method for ultra-thin sapphire wafers for LED substrates, which mainly includes the following steps:
  • the liquid reservoir is located below the diamond cutting line on the cutting machine, and also between the groove wheels of the cutting machine.
  • the vertical distance between the cutting line and the notch of the liquid reservoir is 1.5-3cm, and the spacing between the groove wheels of the cutting machine is 400- 600um, lower the crystal rod at a speed of 0.2-0.5mm/min, start the cutting machine, and the diamond cutting line runs back and forth at a speed of 700-1200mm/min;
  • the cutting fluid continues to fall into the liquid storage tank, and as the crystal rod continues to drop into the liquid, the cutting fluid level in the liquid storage tank will continue to rise.
  • the vertical distance between the liquid level and the notch of the liquid reservoir is less than 1.5cm, open the drain port of the liquid reservoir to discharge the cutting fluid.
  • the discharge flow rate needs to be greater than the flow rate of the cutting fluid flowing into the liquid reservoir to ultimately maintain the cutting fluid liquid.
  • the vertical distance between the surface and the notch of the liquid reservoir is 1.5-3cm;
  • the diameter of the crystal rod is 3-6 inches. This is because the vertical distance between the cutting line and the notch of the liquid storage tank in this application is 1.5-3cm, and the distance between the liquid storage tank and the liquid storage tank is The vertical distance of the cutting liquid level is 1.5-3cm. If the size is too small, the cut part of the crystal rod cannot be immersed in the cutting liquid, and it cannot significantly stabilize the chip and dissipate heat, which has no practical significance; if the size is too small Although the cut part of the crystal rod will be immersed in the cutting liquid, the cutting liquid has limited stabilizing effect on the wafer, making it difficult to cut ultra-thin wafers.
  • the two-component epoxy resin adhesive is composed of component A and component B mixed according to 1-4:1, wherein component A is composed of 50-80% epoxy resin, 5% -13% polysulfide rubber, 5%-13% polyamide resin, 10-24% filler; component B is composed of 90-96% modified amine, 4-10% accelerator.
  • the function of polysulfide rubber is to improve the impact strength and peeling resistance
  • the function of polyamide resin is to improve the bonding ability, so that the modified epoxy resin adhesive can firmly bond crystal rods and
  • the resin mold prevents the crystal rod from moving during the cutting process and improves cutting stability.
  • the cutting fluid consists of polyvinyl alcohol with a mass fraction of 3-8%, polyethylene glycol 20-35%, sodium lauryl sulfate 5-10%, 0-0.05% It is composed of sodium molybdate, 0-0.05% polysiloxane defoamer, and 47-72% water.
  • step c) the liquid storage tank is located below the diamond cutting line on the cutting machine, and is also located between the groove wheels of the cutting machine. By changing the number and position of the groove wheels of the cutting machine, different depths can be placed. Reservoir.
  • the cutting fluid consists of 4-6% polyvinyl alcohol, 24-33% polyethylene glycol, 7-9% sodium lauryl sulfate, and 0.02-0.05% sodium molybdate. , 0.02-0.05% polysiloxane defoamer, 52-64% water.
  • step c) the diameter of the diamond cutting wire on the cutting machine is 200-300um, the crystal rod is lowered at a speed of 0.25-0.4mm/min, the cutting machine is started, and the diamond cutting wire runs back and forth at a speed of 800 -1000mm/min.
  • step d) when the vertical distance between the cutting fluid level and the notch of the liquid storage tank is less than 1.5cm, the liquid storage tank drain port is opened to allow the cutting liquid to flow at a flow rate of 80-120L/min. Drain, and finally keep the vertical distance between the cutting fluid level and the notch of the reservoir at 1.5-3cm.
  • step d) as the cutting of the crystal rod continues, the cut wafer will continue to drop into the liquid in the liquid storage tank. At this time, since the cutting liquid has permeability, the liquid will penetrate into the gap between the wafers. Reduce chip vibration.
  • the thickness of sapphire wafers obtained by traditional diamond wire cutting is generally 600-800 ⁇ m, but the cutting method used in this application can obtain high-quality ultra-thin sapphire wafers with a thickness of 300-400 ⁇ m and small wafer warpage. High surface flatness and low chipping rate.
  • the cut piece-shaped part will be immersed in the cutting liquid in the liquid reservoir.
  • the cutting liquid will penetrate into the gap between the pieces.
  • polyvinyl alcohol is added to the cutting fluid, which makes the cutting fluid have a certain viscosity, so it can have a stabilizing effect on the wafer and reduce the vibration of the wafer during the cutting process, especially at the end of the cutting of the crystal rod, the liquid has a strong impact on the wafer.
  • the stabilizing effect is more obvious and can effectively avoid chip breakage; on the other hand, because sapphire crystal has good thermal conductivity, the sheet-shaped part that has been immersed in the cutting fluid will conduct heat into the cutting fluid, which is beneficial to the heat dissipation of the wafer.
  • the cutting fluid has a certain viscosity and lower fluidity than the water-soluble cutting fluid of traditional sapphire crystal
  • sodium molybdate with a settling effect is added to the cutting fluid to facilitate the settling of the cutting powder and prevent it from accumulating in the cutting fluid. between the cut wafers, causing the wafer to bend.
  • the upper part of the crystal rod is bonded in a square resin mold, so that the stability of the remaining uncut part of the crystal rod is enhanced at the end of cutting the crystal rod, especially during the cutting process of ultra-thin wafers, to avoid it being Shaking occurs under the action of the cutting line, reducing the risk of wafer breakage; at the same time, the cutting area at the end of the ingot cutting is relatively constant, and compared to ingot cutting, the cutting speed is relatively stable, reducing wafer warpage caused by the constant adjustment of the cutting speed. This phenomenon, on the whole, is conducive to cutting high-quality ultra-thin sapphire wafers.
  • the liquid storage tank is located between the groove wheels of the cutting machine. By changing the number and position of the groove wheels of the cutting machine, the volume of the liquid storage tank that can be accommodated can be increased, so that crystal ingots of different sizes can be suitable for this cutting device. .
  • Figure 1 is a schematic cross-sectional view of a square resin mold
  • FIG. 2 is a schematic diagram of cutting in this application.
  • 1-crystal rod 2-square resin mold, 3-resin strip, 4-cutting fluid pipeline, 5-liquid storage tank, 6-cutting line, 7-cutting fluid, 8-drain port, 9-slot wheel;
  • Figure 3 is a schematic diagram of the sheave wheel of the cutting machine in Embodiment 1;
  • Figure 4 is a schematic diagram of the sheave wheel of the cutting machine in Embodiment 2.
  • the diameter of the crystal rod is 4 inches.
  • the two-component epoxy resin adhesive is composed of component A and component B mixed at a ratio of 3:1, where A The component is composed of 70% epoxy resin, 7% polysulfide rubber, 7% polyamide resin, and 16% filler; component B is composed of 95% modified amine and 5% accelerator;
  • the cutting fluid consists of 7% polyvinyl alcohol, 25% polyethylene glycol, 5% sodium lauryl sulfate, 0.03% sodium molybdate, and 0.02% polysiloxane defoamer. , 62.95% water composition;
  • the cutting diagram is shown in Figure 2.
  • the vertical distance between the diamond cutting line 6 on the cutting machine and the notch of the liquid reservoir is 1.5cm.
  • the spacing between the sheaves of the cutting machine is 500um.
  • the position of the sheave 9 of the cutting machine is as shown in Figure 3. Lower the crystal rod at a speed of 0.25-0.4mm/min, start the cutting machine, and the diamond cutting line runs back and forth at a speed of 800-1000mm/min;
  • the diameter of the crystal rod is 6 inches.
  • the two-component epoxy resin adhesive is composed of component A and component B mixed at a ratio of 4:1, where A The component is composed of 70% epoxy resin, 7% polysulfide rubber, 7% polyamide resin, and 16% filler; component B is composed of 95% modified amine and 5% accelerator;
  • the cutting diagram is shown in Figure 2.
  • the vertical distance between the diamond cutting line 6 on the cutting machine and the notch of the liquid reservoir is 2cm.
  • the spacing between the groove wheels of the cutting machine is 500um.
  • the position of the groove wheels of the cutting machine is shown in Figure 4. Place the crystal The rod drops at a speed of 0.2-0.5mm/min, the cutting machine is started, and the diamond cutting line runs back and forth at a speed of 700-1200mm/min;
  • Example 1 and Example 2 high-quality ultra-thin sapphire wafers can be obtained by cutting the wafers using the method of the present application.
  • the thickness of the wafer can reach 300-400 ⁇ m, and the wafer has few line marks, small warpage, and smooth surface.
  • High, low fragmentation rate; in addition, the 4-inch crystal ingot cut in Example 1 is small in size, and the sheave wheel structure shown in Figure 3 can be used.
  • the 6-inch crystal ingot is cut in Example 2, and the size is relatively large, and the sheave wheel structure shown in Figure 3 can be used.
  • the sheave structure shown in Figure 4 illustrates that the method of this application can be applied to cutting crystals of different sizes.
  • the cutting fluid consists of 7% polyvinyl alcohol, 25% polyethylene glycol, and 5% dodecane. It is composed of sodium sulfate, 0.03% sodium molybdate, 00.02% polysiloxane defoamer, and 62.95% water;
  • the groove wheel spacing of the cutting machine is 500um.
  • the groove wheel position of the cutting machine is as shown in Figure 3. Lower the crystal rod at a speed of 0.25-0.4mm/min, start the cutting machine, and the diamond cutting line runs back and forth at a speed of 800-1000mm. /min;
  • the wafer obtained by this method has a high fragmentation rate and a large warpage of the wafer. This is because the cutting thickness of the wafer is thin. As the cutting continues, compared with Example 1, the cut wafer part is not exposed to the cutting liquid. The stabilizing effect of the wafer makes the wafer easy to fragment due to cutting vibration. At the same time, the cut wafer part is not soaked in the cutting fluid and cannot play a role in heat dissipation, causing the wafer to have large thermal stress, a large degree of warpage of the wafer, and easy to Shattered.
  • the cutting fluid consists of 12% polyvinyl alcohol, 40% polyethylene glycol, 5% sodium lauryl sulfate, 0.05% sodium molybdate, 0.05% polysiloxane defoaming agent, and 42.9% water. composition;
  • the wafer obtained by this method has large warpage and low surface flatness. This is because the cutting fluid is not within the preferred range of this application. Its viscosity is too high and its fluidity is poor, which is prone to accumulation of cutting fluid and cutting powder, resulting in The wafer has large warpage and low surface flatness.
  • the cutting fluid consists of 30% polyethylene glycol, 5% sodium lauryl sulfate, 0.05% sodium molybdate, 0.05% polysiloxane defoamer, and 64.9% water;
  • the wafers obtained by this method have a high wafer fragmentation rate. This is because the cutting liquid is not within the preferred range of the present application. Compared with Example 1, the cutting liquid lacks viscosity, causing the cutting liquid to penetrate between the cut wafers. It has no adhesion effect on the chip, cannot stabilize the chip, and is prone to fragments.
  • the two-component epoxy resin adhesive is composed of A Component and component B are mixed at a ratio of 3:1, where component A is composed of 70% epoxy resin, 7% polysulfide rubber, 7% polyamide resin, and 16% filler; component B is composed of Composed of 95% modified amine and 5% accelerator;
  • the wafer obtained by this method has a high wafer fragmentation rate and low surface flatness. This is because, compared with Example 1, a square resin mold is not used to fix the crystal rod, which makes the crystal rod easy to shake at the end of cutting and cutting is unstable. , causing fragmentation and low surface flatness.

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Abstract

一种超薄蓝宝石晶片的切割方法，包括步骤：a)将晶棒（1）粘结在方形树脂模具（2）内，并通过树脂条（3）将其固定在工作台上；b)打开切割液管路（4），切割液（7）流经切割线（6）后下落至储液槽（5）中；c)储液槽（5）位于切割机上的金刚石切割线（6）下方，同时也位于切割机的槽轮（9）之间，晶棒（1）下降经切割线（6）切割，已切割的片状部分会浸入切割液（7）中；d)当切割液（7）的液面与储液槽（5）的槽口的垂直距离小于1.5cm时，打开排液口（8），保持切割液（7）的液面与槽口的垂直距离为1.5-3cm；切割结束后，将晶片进行脱胶处理，最终获得晶片；切割液（7）由质量分数为3-8%的聚乙烯醇、20-35%的聚乙二醇、5-10%的十二烷基硫酸钠、0-0.05%的钼酸钠、0-0.05%的聚硅氧烷消泡剂、47-72%的水组成。通过该切割方法得到的晶片翘曲度小、表面平坦度高、碎片率低。

Description

LED衬底用超薄蓝宝石晶片的切割方法
相关申请的交叉引用
本申请要求于2022年8月31日提交中国国家知识产权局的申请号为202211050722.9、名称为“LED衬底用超薄蓝宝石晶片的切割方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请属于LED衬底用蓝宝石晶体材料领域，尤其涉及一种超薄蓝宝石晶片的切割方法。
背景技术
蓝宝石晶体由于具有优异的导热性、耐磨性、高温稳定性等特点，是LED产品最主要的衬底材料，蓝宝石的LED衬底主要用于生长LED外延材料，制作氮化镓(GaN)基的外延片，GaN层厚度一般在10μm以下，故对蓝宝石衬底的厚度控制也十分严格，以满足小型LED器件的制造需求。然而，蓝宝石的莫氏硬度为9，仅次于金刚石，其切割难度较大，尤其是切割晶片的厚度较薄时，碎片率高，故一般切割得到的晶片厚度为600～800μm，后续还需要将其进行研磨、减薄加工至200μm内再进行LED衬底的制作，因此需要磨削较多的原料，使得蓝宝石晶棒的利用效率不高，故十分有必要开发一种高品质高效率的超薄蓝宝石晶片切割方法，有利于其在LED衬底方面的应用。
然而，蓝宝石晶棒为圆柱状结构，中间位置切割面积最大，两端切割面积小，在晶棒切割至末端时，整个晶棒的大部分区域已成为薄片状，仅有小部分固定在工作台上，故此时晶棒的切割十分不稳固，尤其在超薄蓝宝石晶片切割过程中，由于晶片厚度较小，更容易造成切割不稳定，产生超薄晶片的翘曲、弯曲、破损和断裂等情况。
公开号为CN110076919A的申请专利公开了一种蓝宝石晶棒浸没式多线切割装置及方法，将整个切割装置浸没在切割液存储箱中，避免切割液喷洒引起金刚切割线的张力不稳定，同时也有利于散热，但是切割过程中，切削粉末也会不断落入液体或槽轮上，会影响槽轮的稳定传动，容易引起切割线的张力波动，同时长期浸泡在液体中还会造成装置的腐蚀；虽然该申请中晶棒的切割部分会不断浸没在切割液中，但是对切割液的成分并未明确，其对晶片的稳定作用未可知；另外，晶棒仅粘贴在上方的工件垫条上，稳固性不高，且并未对晶棒切割末期的稳固做出合理的措施。公告号为CN110733140B的中国专利公开了一种蓝宝石晶片切割设备及工艺，主要是采用切刀进行切割，且一次只能切割一个晶片，需要重复操作才能切完一根晶棒，切割效率低，且切割超薄晶片时易碎裂。公告号为CN103448153B的申请专利公开了一种蓝宝石晶棒的切割工艺及其加工治具，加工治具上 设有多个可装有晶棒的弧形槽，适用于直径在12mm以下的晶棒，主要是为了实现一次性切割多个晶棒的目的，其针对的是小尺寸晶棒，对大尺寸晶棒切割末期的晶片是否有稳固作用并未可知。公开号为CN202726719U的实用新型公开了一种蓝宝石晶棒定位面定向加工夹具，其主要目的是为了定位过程中的晶棒灵活夹持和定向，切割时是需要将晶棒从夹具上取下来的，并未涉及切割稳定性。
综上，现有技术中缺乏获得高质量LED衬底用超薄蓝宝石晶片的切割方法
申请内容
为解决上述问题，本申请提出了一种LED衬底用超薄蓝宝石晶片的切割方法，主要包括以下步骤：
a)采用双组份环氧树脂胶粘剂将晶棒紧固粘结在方形树脂模具内，同时采用双组份环氧树脂胶粘剂在方形树脂模具上方粘结树脂条，然后将树脂条固定在工作台上，实现晶棒的固定；
b)打开晶棒两侧的切割液管路，以40-50L/min的流速流出切割液，切割液流经切割线后下落至储液槽中，此时储液槽的排液口处于关闭状态；
c)储液槽位于切割机上的金刚石切割线下方，同时也位于切割机的槽轮之间，切割线与储液槽槽口的垂直距离为1.5-3cm，切割机的槽轮间距为400-600um，将晶棒以0.2-0.5mm/min速度下降，启动切割机，金刚石切割线往返运行速度为700-1200mm/min；
d)在切割过程中，切割液不断下落至储液槽中，且随着晶棒不断下降至液体中，储液槽中的切割液液面会不断升高，为防止液体溢出，当切割液液面与储液槽槽口的垂直距离小于1.5cm时，打开储液槽排液口，使切割液排出，其排出的流速需要大于储液槽中流入切割液的流速，最终保持切割液液面与储液槽槽口的垂直距离为1.5-3cm；
e)晶棒切割结束后，将晶片放入含有脱胶剂的溶液中进行脱胶处理，使晶片脱离模具，最终获得的晶片厚度为300-400um。
其中，所述步骤a)中，晶棒直径为3-6英寸，这是因为，本申请中的切割线与储液槽槽口的垂直距离为1.5-3cm，储液槽与储液槽中的切割液液面的垂直距离为1.5-3cm，若尺寸太小，则无法使得晶棒已切割的部分浸入切割液中，无法明显起到稳固晶片和散热的作用，没有实际意义；若尺寸太大，虽然晶棒已切割的部分会浸入切割液中，但切割液对晶片的稳固作用有限，较难实现超薄晶片的切割。
其中，所述步骤a)中，双组份环氧树脂胶粘剂由A组分和B组分按照1-4：1混合而成，其中A组分由50-80％的环氧树脂、5％-13％的聚硫橡胶、5％-13％的聚酰胺树脂、10-24％的填料组成；B组分由90-96％的改性胺、4-10％的促进剂组成。
其中，双组份环氧树脂胶粘剂中，聚硫橡胶的作用是提高冲击强度和抗剥性能，聚酰 胺树脂的作用是提高粘结能力，使得改性环氧树脂胶粘剂能够牢固粘结晶棒和树脂模具，避免晶棒在切割过程中的移动，提高切割稳定性。
其中，所述步骤b)中，切割液由质量分数为3-8％的聚乙烯醇、20-35％的聚乙二醇、5-10％的十二烷基硫酸钠、0-0.05％的钼酸钠、0-0.05％的聚硅氧烷消泡剂、47-72％的水组成。
其中，所述步骤c)中，储液槽位于切割机上的金刚石切割线下方，同时也位于切割机的槽轮之间，可通过改变切割机的槽轮个数和位置，可安置不同深度的储液槽。
作为一种优选，切割液由质量分数为4-6％的聚乙烯醇、24-33％的聚乙二醇、7-9％的十二烷基硫酸钠、0.02-0.05％的钼酸钠、0.02-0.05％的聚硅氧烷消泡剂、52-64％水组成。
作为一种优选，所述步骤c)中，切割机上的金刚石切割线线径为200-300um，将晶棒以0.25-0.4mm/min速度下降，启动切割机，金刚石切割线往返运行速度为800-1000mm/min。
作为一种优选，所述步骤d)中，当切割液液面与储液槽槽口的垂直距离小于1.5cm时，打开储液槽排液口，使切割液以80-120L/min的流速排出，最终保持切割液液面与储液槽槽口的垂直距离为1.5-3cm。
其中，所述步骤d)中，随着晶棒切割不断进行，已切割的晶片会不断下降至储液槽的液体中，此时，由于切割液具有渗透性，液体会渗透进晶片间隙中，减小晶片震动。
有益效果：
1、传统的金刚线切割获得的蓝宝石晶片厚度一般为600-800μm，但本申请采用的切割方法可以获得高品质的超薄蓝宝石晶片，晶片厚度可达到300-400μm，且晶片翘曲度小、表面平坦度高、碎片率低。
2、在切割过程中，随着晶棒的下降，已切割的片状部分会浸入储液槽的切割液中，一方面，在切割液的渗透作用下，切割液会渗透进片间间隙中，且切割液中加入了聚乙烯醇，使得切割液具有一定的粘性，故可对晶片产生稳定作用，减小晶片在切割过程中的震动，尤其是在晶棒的切割末期，液体对晶片的稳定作用更加明显，能有效避免晶片的碎裂；另一方面，由于蓝宝石晶体具有较好的导热特性，已浸入切割液的片状部分会将热量传导进切割液中，有利于晶片散热。
3、考虑到切割液具有一定的粘性，流动性比传统蓝宝石晶体的水溶性切割液低，因此在切割液中加入了具有沉降作用的钼酸钠，有利于切削粉末的沉降，防止其堆积在已切割的晶片之间，造成晶片弯曲。
4、晶棒切割至末端时，整个晶棒的大部分区域已成为薄片状，仅有小部分固定在工作台上，故此时晶棒的切割十分不稳固，由于晶片厚度较小，也容易产生晶片断裂的风险。本申请中，将晶棒的上部粘结在方形树脂模具内，使得在晶棒切割末期时，对晶棒剩余未切割部分的稳定性增强，尤其在超薄晶片的切割过程中，避免其在切割线的作用下产生晃 动，降低晶片断裂风险；同时，晶棒切割末期的切割面积相对恒定，相对于晶棒切割而言，切割速度相对稳定，降低由切割速度的不断调节引起的晶片翘曲现象，整体而言，有利于切割得到高品质的超薄蓝宝石晶片。
5、储液槽位于切割机的槽轮之间，可通过改变切割机的槽轮个数和位置，增加可容纳的储液槽体积，以使得不同尺寸的晶棒均可适用于本切割装置。
附图说明
图1方形树脂模具的横截面示意图；
图2为本申请切割示意图；
其中，1-晶棒，2-方形树脂模具，3-树脂条，4-切割液管路，5-储液槽，6-切割线，7-切割液，8-排液口，9-槽轮；
图3为实施例1的切割机槽轮示意图；
图4为实施例2的切割机槽轮示意图。
具体实施方式
下面结合实施例对本申请作进一步说明，但不应以此限制本申请的保护范围。
实施例1：
a)晶棒直径为4英寸，采用双组份环氧树脂胶粘剂将晶棒1紧固粘结在方形树脂模具2内(见图1)，同时采用双组份环氧树脂胶粘剂在树脂模具上方粘结树脂条3，然后将树脂条固定在工作台上，以实现晶棒的固定，其中，双组份环氧树脂胶粘剂由A组分和B组分按照3：1混合而成，其中A组分由70％的环氧树脂、7％的聚硫橡胶、7％的聚酰胺树脂、16％的填料组成；B组分由95％的改性胺、5％的促进剂组成；
b)打开晶棒两侧切割液管路4，以42L/min的流速流出切割液，切割液流经切割线后下落至储液槽5中，此时储液槽的排液口8处于关闭状态，切割液由质量分数为7％的聚乙烯醇、25％的聚乙二醇、5％的十二烷基硫酸钠、0.03％的钼酸钠、0.02％的聚硅氧烷消泡剂、62.95％的水组成；
c)切割示意图见图2，切割机上的金刚石切割线6与储液槽槽口的垂直距离为1.5cm，切割机的槽轮间距为500um，切割机槽轮9的位置如图3所示，将晶棒以0.25-0.4mm/min速度下降，启动切割机，金刚石切割线往返运行速度为800-1000mm/min；
d)在切割过程中，切割液不断下落至储液槽中，且随着晶棒不断下降至液体中，储液槽中的切割液7液面会不断升高，为防止液体溢出，当切割液液面与储液槽槽口的垂直距离小于1.5cm时，打开储液槽排液口8，使切割液排出，其排出的流速需要大于储液槽中流入切割液的流速，排出流速为87-95L/min，最终保持切割液液面与储液槽槽口的垂直距离为1.5-3cm；
e)晶棒切割结束后，将晶片放入含有脱胶剂的溶液中进行脱胶处理，使晶片脱离模具，最终获得的晶片厚度为300-400um。
实施例2
a)晶棒直径为6英寸，采用双组份环氧树脂胶粘剂将晶棒1紧固粘结在方形树脂模具2内(见图1)，同时采用双组份环氧树脂胶粘剂在树脂模具上方粘结树脂条3，然后将树脂条固定在工作台上，以实现晶棒的固定，其中，双组份环氧树脂胶粘剂由A组分和B组分按照4：1混合而成，其中A组分由70％的环氧树脂、7％的聚硫橡胶、7％的聚酰胺树脂、16％的填料组成；B组分由95％的改性胺、5％的促进剂组成；
b)打开晶棒两侧的切割液管路4，以46L/min的流速流出切割液，切割液流经切割线后下落至储液槽5中，此时储液槽的排液口8处于关闭状态，切割液由质量分数为4％的聚乙烯醇、28％的聚乙二醇、5％的十二烷基硫酸钠、0.05％的钼酸钠、0.05％的聚硅氧烷消泡剂、62.9％水组成；
c)切割示意图见图2，切割机上的金刚石切割线6与储液槽槽口的垂直距离为2cm，切割机的槽轮间距为500um，切割机的槽轮位置如图4所示，将晶棒以0.2-0.5mm/min速度下降，启动切割机，金刚石切割线往返运行速度为700-1200mm/min；
d)在切割过程中，切割液不断下落至储液槽中，且随着晶棒不断下降至液体中，储液槽中的切割液7液面会不断升高，为防止液体溢出，当切割液液面与储液槽槽口的垂直距离小于1.5cm时，打开储液槽排液口8，使切割液排出，其排出的流速需要大于储液槽中流入切割液的流速，排出流速为100-105L/min，最终保持切割液液面与储液槽槽口的垂直距离为1.5-3cm；
e)晶棒切割结束后，将晶片放入含有脱胶剂的溶液中进行脱胶处理，使晶片脱离模具，最终获得的晶片厚度为300-400um。
在实施例1和实施例2中，采用本申请方法切割得到的晶片，可以获得高品质的超薄蓝宝石晶片，晶片厚度可达到300-400μm，且晶片线痕少、翘曲小、表面平坦度高、碎片率低；另外，实施例1切割的是4英寸晶棒，尺寸小，可采用图3所示槽轮结构，实施例2切割的是6英寸晶棒，尺寸相对较大，可采用图4所示槽轮结构，说明本申请方法可适用于不同尺寸晶体的切割。
对比例1
a)同实施例1；
b)打开晶棒两侧的切割液管路，以42L/min的流速流出切割液，切割液由质量分数为7％的聚乙烯醇、25％的聚乙二醇、5％的十二烷基硫酸钠、0.03％的钼酸钠、00.02％的聚硅氧烷消泡剂、62.95％的水组成；
c)切割机的槽轮间距为500um，切割机的槽轮位置如图3所示，将晶棒以0.25-0.4mm/min速度下降，启动切割机，金刚石切割线往返运行速度为800-1000mm/min；
d)晶棒切割结束后，将晶片放入含有脱胶剂的溶液中进行脱胶处理，使晶片脱离模具，最终获得的晶片厚度为300-400um。
采用该方法获得的晶片，碎片率较高，晶片翘曲大，这是因为，晶片的切割厚度较薄，随着切割不断进行，与实施例1相比，已切割的晶片部分没有受到切割液的稳固作用，使得晶片易随着切割震动而碎裂，同时，已切割的晶片部分没有浸润在切割液中，无法起到散热的作用，使得晶片热应力大，晶片翘曲程度大，且易碎裂。
对比例2
a)同实施例1；
b)打开晶棒两侧的切割液管路，以42L/min的流速流出切割液，切割液流经切割线后下落至储液槽中，此时储液槽的排液口处于关闭状态，切割液由质量分数为12％的聚乙烯醇、40％聚乙二醇、5％十二烷基硫酸钠、0.05％的钼酸钠、0.05％的聚硅氧烷消泡剂、42.9％水组成；
c)同实施例1；
d)同实施例1；
e)同实施例1。
采用该方法获得的晶片，晶片翘曲大，表面平坦度低，这是因为，切割液不在本申请的优选范围内，其粘度过大，流动性差，容易产生切割液和切割粉末的堆积，导致晶片翘曲大，表面平坦度低。
对比例3
a)同实施例1；
b)打开晶棒两侧的切割液管路，以42L/min的流速流出切割液，切割液流经切割线后下落至储液槽中，此时储液槽的排液口处于关闭状态，切割液由质量分数为30％聚乙二醇、5％十二烷基硫酸钠、0.05％的钼酸钠、0.05％的聚硅氧烷消泡剂、64.9％水组成；
c)同实施例1；
d)同实施例1；
e)同实施例1。
采用该方法获得的晶片，晶片碎片率高，这是因为，切割液不在本申请的优选范围内，相对于实施例1，切割液缺少粘性，使得切割液渗透进已切割的晶片之间后，对晶片没有黏附作用，无法起到稳定晶片的作用，容易产生碎片。
对比例4
a)采用双组份环氧树脂胶粘剂将直径为4英寸的晶棒上方黏贴树脂条，然后将树脂条固定在工作台上，以实现晶棒的固定，双组份环氧树脂胶粘剂由A组分和B组分按照3：1混合而成，其中A组分由70％的环氧树脂、7％的聚硫橡胶、7％的聚酰胺树脂、16％的填料组成；B组分由95％的改性胺、5％的促进剂组成；
b)同实施例1；
c)同实施例1；
d)同实施例1；
e)同实施例1。
采用该方法获得的晶片，晶片碎片率高，表面平坦度低，这是因为，与实施例1相比，没有使用方形树脂模具固定晶棒，使得晶棒在切割末期，容易晃动，切割不稳定，产生碎裂，表面平坦度低。
尽管已经示出和描述了本申请的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本申请的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本申请的范围由所附权利要求及其等同物限定。

Claims (8)

  1. LED衬底用超薄蓝宝石晶片的切割方法，其特征在于，包括如下步骤：
    a)采用胶粘剂将晶棒粘结在方形树脂模具内，同时采用胶粘剂在树脂模具上方粘结树脂条，然后将树脂条固定在工作台上，以实现晶棒的固定；
    b)打开切割液管路，切割液流经切割线后下落至储液槽中，此时储液槽的排液口处于关闭状态，切割液由质量分数为3-8％的聚乙烯醇、20-35％的聚乙二醇、5-10％的十二烷基硫酸钠、0-0.05％的钼酸钠、0-0.05％的聚硅氧烷消泡剂、47-72％的水组成；
    c)储液槽位于切割机上的金刚石切割线下方，同时也位于切割机的槽轮之间，切割机上的金刚石切割线与储液槽槽口的垂直距离为1.5-3cm，将晶棒以0.2-0.5mm/min速度下降，启动切割机，金刚石切割线往返运行速度为700-1200mm/min；
    d)在切割过程中，切割液不断下落至储液槽中，随着晶棒不断下降至液体中，储液槽中的切割液液面会不断升高，当切割液液面与储液槽槽口的垂直距离小于1.5cm时，打开储液槽排液口，使切割液排出，最终保持切割液液面与储液槽槽口的垂直距离为1.5-3cm；
    e)晶棒切割结束后，将晶片放入含有脱胶剂的溶液中进行脱胶处理，使晶片脱离模具，最终获得的晶片厚度为300-400um。
  2. 如权利要求1所述的LED衬底用超薄蓝宝石晶片的切割方法，其特征在于，所述步骤a)中，晶棒直径为3-6英寸。
  3. 如权利要求1所述的LED衬底用超薄蓝宝石晶片的切割方法，其特征在于，所述步骤a)中，采用的胶粘剂为双组份环氧树脂胶粘剂，双组份环氧树脂胶粘剂由A组分和B组分按照1-4：1混合而成，其中A组分由50-80％的环氧树脂、5-13％的聚硫橡胶、5-13％的聚酰胺树脂、10-24％的填料组成；B组分由90-96％的改性胺、4-10％的促进剂组成。
  4. 如权利要求1所述的LED衬底用超薄蓝宝石晶片的切割方法，其特征在于，所述步骤b)中，切割液由质量分数为4-6％的聚乙烯醇、24-33％的聚乙二醇、7-9％的十二烷基硫酸钠、0.02-0.05％的钼酸钠、0.02-0.05％的聚硅氧烷消泡剂、52-64％水组成。
  5. 如权利要求1所述的LED衬底用超薄蓝宝石晶片的切割方法，其特征在于，所述步骤b)中，打开晶棒两侧的切割液管路，以40L/min-50L/min的流速流出切割液。
  6. 如权利要求1所述的LED衬底用超薄蓝宝石晶片的切割方法，其特征在于，所述步骤c)中，切割机的槽轮间距为400-600um，金刚石切割线线径为200-300um，切割线往返运行速度为800-1000mm/min，晶棒以0.25-0.4mm/min速度下降。
  7. 如权利要求1所述的LED衬底用超薄蓝宝石晶片的切割方法，其特征在于，所述步骤d)中，当切割液液面与储液槽槽口的垂直距离小于1.5cm时，打开储液槽排液口，使切 割液以80-120L/min的流速排出，最终保持切割液液面与储液槽槽口的垂直距离为1.5-3cm。
  8. 如权利要求1所述的LED衬底用超薄蓝宝石晶片的切割方法，其特征在于，可通过改变所述切割机的槽轮个数和位置，安置不同深度的储液槽。
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CN115139420B (zh) * 2022-08-31 2022-11-29 天通控股股份有限公司 Led衬底用超薄蓝宝石晶片的切割方法
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040084042A1 (en) * 2002-11-06 2004-05-06 Seh America, Inc. Apparatus, system and method for cutting a crystal ingot
JP2009113272A (ja) * 2007-11-05 2009-05-28 Kanai Hiroaki 硬質材料の切断方法
JP2012135870A (ja) * 2010-12-10 2012-07-19 Nagasaki Univ 切断方法
JP2012187646A (ja) * 2011-03-09 2012-10-04 Sumitomo Metal Mining Co Ltd ワイヤーソー切断装置
CN103448153A (zh) * 2013-08-23 2013-12-18 蓝思科技股份有限公司 一种蓝宝石晶棒的切割工艺及其加工治具
JP2015185830A (ja) * 2014-03-26 2015-10-22 株式会社巴川製紙所 ワイヤーソーダイシング法用の仮固定用接着部材、およびワイヤーソーダイシング法
CN108724495A (zh) * 2017-04-24 2018-11-02 上海新昇半导体科技有限公司 硅片切割装置
CN110076919A (zh) * 2019-05-31 2019-08-02 江苏吉星新材料有限公司 一种蓝宝石晶棒浸没式多线切割装置及方法
CN115139420A (zh) * 2022-08-31 2022-10-04 天通控股股份有限公司 Led衬底用超薄蓝宝石晶片的切割方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2503275B2 (ja) * 1989-07-27 1996-06-05 株式会社 東京精密 スライシングマシンの切断装置
JP2757086B2 (ja) * 1992-02-13 1998-05-25 信越半導体株式会社 ウエーハ切り離し方法及びワイヤーソー装置
US20030047177A1 (en) * 2001-09-11 2003-03-13 Michael Christ Method for cutting ingots for use with a wire cutting apparatus
US20110126813A1 (en) * 2009-12-01 2011-06-02 Diamond Wire Technology, Inc. Multi-wire wafer cutting apparatus and method
CN109421185B (zh) * 2017-09-05 2021-05-28 上海新昇半导体科技有限公司 一种晶棒的切割方法及切割装置
CN114161594B (zh) * 2021-11-24 2024-02-13 广东先导微电子科技有限公司 一种碲锌镉单晶多线切割砂浆及切割工艺

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040084042A1 (en) * 2002-11-06 2004-05-06 Seh America, Inc. Apparatus, system and method for cutting a crystal ingot
JP2009113272A (ja) * 2007-11-05 2009-05-28 Kanai Hiroaki 硬質材料の切断方法
JP2012135870A (ja) * 2010-12-10 2012-07-19 Nagasaki Univ 切断方法
JP2012187646A (ja) * 2011-03-09 2012-10-04 Sumitomo Metal Mining Co Ltd ワイヤーソー切断装置
CN103448153A (zh) * 2013-08-23 2013-12-18 蓝思科技股份有限公司 一种蓝宝石晶棒的切割工艺及其加工治具
JP2015185830A (ja) * 2014-03-26 2015-10-22 株式会社巴川製紙所 ワイヤーソーダイシング法用の仮固定用接着部材、およびワイヤーソーダイシング法
CN108724495A (zh) * 2017-04-24 2018-11-02 上海新昇半导体科技有限公司 硅片切割装置
CN110076919A (zh) * 2019-05-31 2019-08-02 江苏吉星新材料有限公司 一种蓝宝石晶棒浸没式多线切割装置及方法
CN115139420A (zh) * 2022-08-31 2022-10-04 天通控股股份有限公司 Led衬底用超薄蓝宝石晶片的切割方法

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