WO2024018790A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
WO2024018790A1
WO2024018790A1 PCT/JP2023/022270 JP2023022270W WO2024018790A1 WO 2024018790 A1 WO2024018790 A1 WO 2024018790A1 JP 2023022270 W JP2023022270 W JP 2023022270W WO 2024018790 A1 WO2024018790 A1 WO 2024018790A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
die pad
lead
conductive member
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/022270
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
諒介 福田
匡司 林口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2024534968A priority Critical patent/JPWO2024018790A1/ja
Publication of WO2024018790A1 publication Critical patent/WO2024018790A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Definitions

  • the present disclosure relates to a semiconductor device.
  • Patent Document 1 describes a first conductive plate and a second conductive plate in which two switching elements are individually conductively joined, a first input terminal connected to the first conductive plate, an output terminal connected to the second conductive plate,
  • An example of a semiconductor device is disclosed that includes a second input terminal, a first conductive member, a second conductive member, and a sealing resin.
  • the first conductive member is conductively connected to a switching element that is conductively connected to the first conductive plate, and to the second conductive plate.
  • the second conductive member is conductively connected to the switching element that is conductively connected to the second conductive plate and to the second input terminal.
  • a half-bridge circuit including two switching elements is configured. Therefore, by using the semiconductor device, power can be converted.
  • Each of the first conductive member and the second conductive member included in the semiconductor device disclosed in Patent Document 1 is a metal clip. Therefore, in the semiconductor device, it is possible to flow a larger current.
  • most of the heat generated from the first conductive member due to conduction is released to the outside via the second conductive plate.
  • most of the heat generated from the second conductive member due to conduction is released to the outside via the second input terminal. Since the volume of the second input terminal is smaller than the volume of the second conductive plate, the heat radiation efficiency of the second conductive member is lower than that of the first conductive member. Therefore, a measure for improving the heat dissipation efficiency of the second conductive member is desired.
  • An object of the present disclosure is to provide a semiconductor device that is improved over the conventional semiconductor device. Particularly, in view of the above circumstances, one object of the present disclosure is to provide a semiconductor device that can improve heat dissipation efficiency while flowing a larger current.
  • a semiconductor device provided by one aspect of the present disclosure includes a first die pad, a first semiconductor element bonded to the first die pad, a first lead separated from the first die pad, and a first semiconductor element bonded to the first die pad. and the first lead, a sealing resin that covers the first semiconductor element and the first conductive member, and a position between the first die pad and the first conductive member. and a pillow member.
  • the pillow member is in contact with the first die pad and the first conductive member.
  • the pillow member has an insulating layer. The thermal conductivity of the insulating layer is higher than that of the sealing resin.
  • FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a plan view of the semiconductor device shown in FIG. 1.
  • FIG. 3 is a plan view corresponding to FIG. 2, in which the sealing resin is seen through.
  • FIG. 4 is a bottom view of the semiconductor device shown in FIG. 1.
  • FIG. 5 is a front view of the semiconductor device shown in FIG. 1.
  • FIG. 6 is a right side view of the semiconductor device shown in FIG. 1.
  • FIG. 7 is a sectional view taken along line VII-VII in FIG. 3.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3.
  • 9 is a sectional view taken along line IX-IX in FIG. 3.
  • FIG. 10 is a partially enlarged view of FIG.
  • FIG. 11 is a partially enlarged view of FIG. 7, showing the second semiconductor element and its vicinity.
  • FIG. 12 is a partially enlarged view of FIG. 8.
  • FIG. 13 is a partially enlarged view of FIG. 9.
  • FIG. 14 is a partially enlarged view of FIG. 3, showing the pillow member and its vicinity.
  • FIG. 15 is a sectional view taken along line XV-XV in FIG. 14.
  • FIG. 16 is a partially enlarged view of FIG. 3, showing the first conductive member and the second conductive member.
  • FIG. 17 is a cross-sectional view of a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 18 is a partially enlarged plan view of the semiconductor device shown in FIG. 17, and illustration of the sealing resin is omitted.
  • FIG. 19 is a sectional view taken along line XIX-XIX in FIG. 18.
  • FIG. 20 is a cross-sectional view of a semiconductor device according to a third embodiment of the present disclosure.
  • 21 is a partially enlarged plan view of the semiconductor device shown in FIG. 20, and illustration of the sealing resin is omitted.
  • FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. 21.
  • FIG. 23 is a partially enlarged cross-sectional view of a semiconductor device according to a modification of the third embodiment of the present disclosure.
  • FIG. 24 is a cross-sectional view of a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 25 is a partially enlarged sectional view of FIG. 24.
  • a semiconductor device A10 according to a first embodiment of the present disclosure will be described based on FIGS. 1 to 16.
  • the semiconductor device A10 includes two die pads 10, a first lead 11, a second lead 12, a third lead 13, two fourth leads 14, two fifth leads 15, a plurality of semiconductor elements 21, a conductive bonding layer 29, A first conductive member 31, a second conductive member 32, a pillow member 33, and a sealing resin 50 are provided. Further, the semiconductor device A10 includes two first wires 41, two second wires 42, two first relay wires 43, and two second relay wires 44.
  • the sealing resin 50 is shown.
  • the transparent sealing resin 50 is shown by an imaginary line (two-dot chain line). Furthermore, in FIG. 3, the IX-IX line is indicated by a dashed dotted line.
  • first direction z An example of a direction perpendicular to the first direction z is referred to as a "second direction x.”
  • second direction x An example of a direction perpendicular to the first direction z and the second direction x is referred to as a "third direction y.”
  • the semiconductor device A10 converts the DC power supply voltage applied to the first lead 11 and the third lead 13 into AC power using the plurality of semiconductor elements 21.
  • the converted AC power is input from the second lead 12 to a power supply target such as a motor.
  • the semiconductor device A10 is used, for example, in a power conversion circuit such as an inverter.
  • the two die pads 10 include a first die pad 10A and a second die pad 10B, as shown in FIGS. 3, 7, and 8.
  • the first die pad 10A and the second die pad 10B are separated from each other in the second direction x.
  • the two die pads 10, along with a first lead 11, a second lead 12, a third lead 13, two fourth leads 14, and two fifth leads 15, are obtained from the same lead frame.
  • the lead frame contains copper (Cu) or a copper alloy. Therefore, each of the two die pads 10, the first lead 11, the second lead 12, the third lead 13, the two fourth leads 14, and the two fifth leads 15 contain copper element.
  • Each of the two die pads 10 has a main surface 101 and a back surface 102.
  • the main surface 101 and the back surface 102 face oppositely to each other in the first direction z.
  • the back surface 102 of each of the two die pads 10 is exposed from the sealing resin 50.
  • the first die pad 10A is provided with a first seat portion 103.
  • the first seat portion 103 is recessed from the main surface 101 of the first die pad 10A. Thereby, in the first die pad 10A, there is a step difference between the main surface 101 and the first seat portion 103.
  • the sealing resin 50 covers the plurality of semiconductor elements 21, the first conductive member 31, and the second conductive member 32, as shown in FIGS. 7 to 9. Furthermore, the sealing resin 50 partially covers each of the two die pads 10 , the first lead 11 , the second lead 12 , the third lead 13 , the two fourth leads 14 , and the two fifth leads 15 . .
  • the sealing resin 50 has electrical insulation properties.
  • the sealing resin 50 is made of a material containing, for example, a black epoxy resin.
  • the sealing resin 50 has a top surface 51 , a bottom surface 52 , two first side surfaces 53 , a second side surface 54 , a third side surface 55 , a plurality of recesses 56 , and a groove 57 .
  • the top surface 51 faces the same side as the main surfaces 101 of the two die pads 10 in the first direction z.
  • the bottom surface 52 faces opposite to the top surface 51 in the first direction z.
  • the back surface 102 of each of the two die pads 10 is exposed from the bottom surface 52.
  • the two first side surfaces 53 are separated from each other in the second direction x.
  • the two first side surfaces 53 face the second direction x and extend in the third direction y.
  • the two first side surfaces 53 are connected to the top surface 51 and the bottom surface 52.
  • the second side surface 54 and the third side surface 55 are separated from each other in the third direction y.
  • the second side surface 54 and the third side surface 55 face oppositely to each other in the third direction y and extend in the second direction x.
  • the second side surface 54 and the third side surface 55 are connected to the top surface 51 and the bottom surface 52.
  • a first lead 11, a second lead 12, a third lead 13, two fourth leads 14, and two fifth leads 15 protrude from the third side surface 55.
  • the plurality of recesses 56 are recessed from the third side surface 55 in the third direction y, and penetrate the sealing resin 50 in the first direction z. In the second direction and between the second lead 12 and a first detection terminal 15A, which will be described later.
  • the groove 57 is recessed from the bottom surface 52 in the first direction z and extends in the third direction y. Both sides of the groove portion 57 in the third direction y are connected to the second side surface 54 and the third side surface 55. When viewed in the first direction z, the groove portion 57 partitions the back surface 102 of each of the two die pads 10 .
  • the plurality of semiconductor elements 21 are bonded to each of the two die pads 10, as shown in FIG. 3 and FIGS. 7 to 9.
  • the plurality of semiconductor elements 21 include two first semiconductor elements 21A and two second semiconductor elements 21B.
  • the two first semiconductor elements 21A are bonded to the main surface 101 of the first die pad 10A.
  • the two second semiconductor elements 21B are bonded to the main surface 101 of the second die pad 10B.
  • the plurality of semiconductor elements 21 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors).
  • the plurality of semiconductor elements 21 may be switching elements such as IGBTs (Insulated Gate Bipolar Transistors), or diodes.
  • the plurality of semiconductor elements 21 are n-channel type MOSFETs with a vertical structure.
  • the plurality of semiconductor elements 21 include a compound semiconductor substrate.
  • the composition of the compound semiconductor substrate includes silicon carbide (SiC).
  • SiC silicon carbide
  • each of the plurality of semiconductor elements 21 has a first electrode 211, a second electrode 212, a third electrode 213, and two fourth electrodes 214.
  • the first electrode 211 is located on the side opposite to the side facing one of the main surfaces 101 of the two die pads 10 in the first direction z. A current corresponding to the power converted by the semiconductor element 21 flows through the first electrode 211 . That is, the first electrode 211 corresponds to the source electrode of the semiconductor element 21.
  • the second electrode 212 faces the main surface 101 of either of the two die pads 10. A current corresponding to the power before being converted by the semiconductor element 21 flows through the second electrode 212 . That is, the second electrode 212 corresponds to the drain electrode of the semiconductor element 21.
  • the third electrode 213 is located on the same side as the first electrode 211 in the first direction z.
  • a gate voltage for driving the semiconductor element 21 is applied to the third electrode 213 .
  • the area of the third electrode 213 is smaller than the area of the first electrode 211 when viewed in the first direction z.
  • the two fourth electrodes 214 are located on the same side as the first electrode 211 in the first direction z.
  • the two fourth electrodes 214 are located on opposite sides of the third electrode 213 in the third direction y.
  • a voltage having the same potential as the voltage applied to the first electrode 211 is applied to each of the two fourth electrodes 214 .
  • the conductive bonding layer 29 is formed between the main surface 101 of the first die pad 10A and the two first semiconductor elements 21A, and between the main surface 101 of the second die pad 10B and the two second semiconductor elements 21A. and the semiconductor element 21B.
  • the conductive bonding layer 29 is, for example, solder.
  • the conductive bonding layer 29 may be made of sintered metal.
  • the conductive bonding layer 29 conductively bonds the main surface 101 of the first die pad 10A and the second electrode 212 of each of the two first semiconductor elements 21A. Thereby, the second electrode 212 of each of the two first semiconductor elements 21A is electrically connected to the first die pad 10A.
  • the conductive bonding layer 29 conductively bonds the main surface 101 of the second die pad 10B and the second electrode 212 of each of the two second semiconductor elements 21B. Thereby, the second electrode 212 of each of the two second semiconductor elements 21B is electrically connected to the second die pad 10B.
  • the first lead 11 is located on the opposite side of the second side surface 54 of the sealing resin 50 with respect to the two die pads 10 in the third direction y.
  • the first lead 11 is separated from the two die pads 10.
  • the first lead 11 is electrically connected to the first electrodes 211 of the two first semiconductor elements 21A.
  • the first lead 11 is an N terminal (negative electrode) to which a DC power supply voltage to be subjected to power conversion is applied.
  • the first lead 11 has a mounting portion 111 and a covering portion 112.
  • the mounting portion 111 protrudes from the third side surface 55 of the sealing resin 50 to the outside.
  • the mounting portion 111 extends in the third direction y.
  • the covering section 112 is connected to the mounting section 111.
  • the covering portion 112 is covered with a sealing resin 50.
  • the covering portion 112 of the first lead 11 is provided with a second seat portion 113.
  • the second seat portion 113 is recessed in the first direction z from the side where a first intermediate portion 313 of the first conductive member 31 described later is located in the first direction z.
  • the second lead 12 is connected to the first die pad 10A. Therefore, the second lead 12 is electrically connected to the second electrode 212 of each of the two first semiconductor elements 21A via the first die pad 10A. AC power converted by the plurality of semiconductor elements 21 is output from the second lead 12 .
  • the second lead 12 is located on the opposite side of the third lead 13 with respect to the first lead 11, and is located next to the first lead 11.
  • the second lead 12 has a mounting portion 121 and a covering portion 122.
  • the mounting portion 121 protrudes from the third side surface 55 of the sealing resin 50 to the outside.
  • the mounting portion 121 extends in the third direction y.
  • the covering portion 122 connects the mounting portion 121 and the first die pad 10A.
  • the covering portion 122 is covered with a sealing resin 50.
  • the covering portion 122 is bent toward the side approaching the main surface 101 of the first die pad 10A in the first direction z.
  • the third lead 13 is connected to the second die pad 10B. Therefore, the third lead 13 is electrically connected to the second electrode 212 of each of the two second semiconductor elements 21B via the second die pad 10B.
  • the third lead 13 is a P terminal (positive electrode) to which a DC power supply voltage to be converted is applied.
  • the third lead 13 is located on the opposite side of the second lead 12 with respect to the first lead 11, and is located next to the first lead 11.
  • the third lead 13 has a mounting portion 131 and a covering portion 132.
  • the mounting portion 131 protrudes from the third side surface 55 of the sealing resin 50 to the outside.
  • the mounting portion 131 extends in the third direction y.
  • the covering portion 132 connects the mounting portion 131 and the second die pad 10B.
  • the covering portion 132 is covered with a sealing resin 50.
  • the covering portion 132 is bent toward the side approaching the main surface 101 of the second die pad 10B in the first direction z.
  • the two fourth leads 14 are located on the opposite side of the second side surface 54 of the sealing resin 50 with respect to the two die pads 10 in the third direction y. As shown in FIG. 3, the two fourth leads 14 extend in the third direction y. The two fourth leads 14 sandwich the first lead 11, second lead 12, third lead 13, and two fifth leads 15 between them in the second direction x.
  • the two fourth leads 14 include a first gate terminal 14A and a second gate terminal 14B.
  • each of the two fourth leads 14 has a mounting portion 141 and a covering portion 142.
  • the mounting portion 141 protrudes from the third side surface 55 of the sealing resin 50 to the outside.
  • the mounting portion 141 extends in the third direction y.
  • the covering section 142 is connected to the mounting section 141.
  • the covering portion 142 is covered with a sealing resin 50.
  • the first gate terminal 14A is located closer to the first die pad 10A than the second die pad 10B.
  • the first gate terminal 14A is electrically connected to the third electrode 213 of each of the two first semiconductor elements 21A.
  • a gate voltage for driving the two first semiconductor elements 21A is applied to the first gate terminal 14A.
  • the second gate terminal 14B is located closer to the second die pad 10B than the first die pad 10A.
  • the second gate terminal 14B is electrically connected to the third electrode 213 of each of the two second semiconductor elements 21B.
  • a gate voltage for driving the two second semiconductor elements 21B is applied to the second gate terminal 14B.
  • the two fifth leads 15 are located on the opposite side of the second side surface 54 of the sealing resin 50 with respect to the two die pads 10 in the third direction y. As shown in FIG. 3, the two fifth leads 15 extend in the third direction y. The two fifth leads 15 sandwich the first lead 11, second lead 12, and third lead 13 between them in the second direction x.
  • the two fifth leads 15 include a first detection terminal 15A and a second detection terminal 15B.
  • each of the two fifth leads 15 has a mounting portion 151 and a covering portion 152.
  • the mounting portion 151 protrudes from the third side surface 55 of the sealing resin 50 to the outside.
  • the mounting portion 151 extends in the third direction y.
  • the covering section 152 is connected to the mounting section 151.
  • the covering portion 152 is covered with a sealing resin 50.
  • the first detection terminal 15A is located between the second lead 12 and the first gate terminal 14A, as shown in FIGS. 2 and 3.
  • the first detection terminal 15A is electrically connected to the two fourth electrodes 214 of each of the two first semiconductor elements 21A.
  • a voltage having the same potential as the voltage applied to each of the first electrodes 211 of the two first semiconductor elements 21A is applied to the first detection terminal 15A.
  • the second detection terminal 15B is located between the third lead 13 and the second gate terminal 14B, as shown in FIGS. 2 and 3.
  • the second detection terminal 15B is electrically connected to the two fourth electrodes 214 of each of the two second semiconductor elements 21B.
  • a voltage having the same potential as the voltage applied to each of the first electrodes 211 of the two second semiconductor elements 21B is applied to the second detection terminal 15B.
  • the mounting portion 111 of the first lead 11, the mounting portion 121 of the second lead 12, and the mounting portion 131 of the third lead 13 have the same height h. As shown in FIG. 6, when viewed in the second direction The mounting portions 131 of the three leads 13 are overlapped with each other.
  • the first conductive member 31 is electrically connected to the first electrodes 211 of the two first semiconductor elements 21A and the second seat portion 113 of the first lead 11, as shown in FIGS. 3 and 9. Thereby, the first lead 11 is electrically connected to the first electrode 211 of each of the two first semiconductor elements 21A.
  • the first conductive member 31 contains copper or a copper alloy.
  • the first conductive member 31 is a metal clip.
  • the first conductive member 31 has two first joint parts 311 , a second joint part 312 , and a first intermediate part 313 .
  • the two first bonding parts 311 are individually conductively bonded to the first electrodes 211 of the two first semiconductor elements 21A.
  • Each of the two first joining parts 311 is a bifurcated part separated from each other in the third direction y.
  • the two first joints 311 are separated from each other in the third direction y.
  • the second joint portion 312 is electrically conductively joined to the second seat portion 113 of the first lead 11.
  • the second joint 312 extends in the second direction x. At least a portion of the second joint portion 312 is accommodated in the second seat portion 113.
  • the first intermediate portion 313 is bent into a hook shape when viewed in the first direction z. When viewed in the first direction z, the first intermediate portion 313 overlaps the main surface 101 of the first die pad 10A.
  • the first intermediate portion 313 connects the two first joint portions 311 and the second joint portion 312. As shown in FIG. 15, the first intermediate portion 313 has a first surface 313A, a second surface 313B, and a bent portion 313C.
  • the first surface 313A is in contact with the pillow member 33.
  • the second surface 313B is separated from the first surface 313A and faces the main surface 101 of the first die pad 10A.
  • the first surface 313A and the second surface 313B face the same side in the first direction z.
  • the first surface 313A is located between the main surface 101 of the first die pad 10A and the second surface 313B in the first direction z.
  • the bent portion 313C is bent from the second surface 313B toward the main surface 101 of the first die pad 10A.
  • the bent portion 313C includes a first surface 313A.
  • the dimensions in the first direction z and the portion of the first intermediate portion 313 in the in-plane direction are equal to each other.
  • each of the plurality of first chamfers 314 has a first edge 314A, a second edge 314B, and a first connecting edge 314C when viewed in the first direction z.
  • the first edge 314A extends in a direction perpendicular to the first direction z.
  • the second edge 314B extends in a direction perpendicular to the first direction z, which is different from the direction in which the first edge 314A extends.
  • the first connecting edge 314C smoothly connects the first edge 314A and the second edge 314B.
  • each of the first edge 314A and the second edge 314B is a tangent to the first connecting edge 314C.
  • the first connecting edge 314C is separated from the intersection P1 between the extension line L1 of the first edge 314A and the extension line L2 of the second edge 314B.
  • the pillow member 33 is located between the first die pad 10A and the first intermediate portion 313 of the first conductive member 31, as shown in FIG. As shown in FIG. 15, the pillow member 33 is in contact with the main surface 101 of the first die pad 10A and the first surface 313A of the first intermediate portion 313 of the first conductive member 31. As shown in FIG. 14, the pillow member 33 includes a portion that protrudes outward from the first intermediate portion 313 when viewed in the first direction z. As shown in FIG. 15, the pillow member 33 includes an insulating layer 331, a first metal layer 332, a second metal layer 333, a first bonding layer 334, and a second bonding layer 335.
  • the insulating layer 331 electrically insulates the first die pad 10A and the first conductive member 31 from each other.
  • the thermal conductivity of the insulating layer 331 is higher than that of the sealing resin 50.
  • the insulating layer 331 includes ceramics.
  • the ceramic contains, for example, either aluminum nitride (AlN) or aluminum oxide (Al 2 O 3 ).
  • the insulating layer 331 may include a resin that has higher thermal conductivity than the sealing resin 50 and has electrical insulation properties.
  • the first metal layer 332 is located between the first die pad 10A and the insulating layer 331.
  • the first metal layer 332 is in contact with the insulating layer 331.
  • the first metal layer 332 contains copper.
  • the second metal layer 333 is located between the insulating layer 331 and the first intermediate portion 313 of the first conductive member 31 . Therefore, the first metal layer 332 and the second metal layer 333 are located on opposite sides of the insulating layer 331.
  • the second metal layer 333 is in contact with the insulating layer 331.
  • the second metal layer 333 contains copper.
  • the thermal conductivity of the first metal layer 332 and the second metal layer 333 is higher than that of the insulating layer 331.
  • each of the first metal layer 332 and the second metal layer 333 is greater than the thickness of the insulating layer 331.
  • the insulating layer 331, the first metal layer 332, and the second metal layer 333 are obtained from, for example, a DBC (Direct Bonded Copper) substrate.
  • each of the first metal layer 332 and the second metal layer 333 may contain silver.
  • the thermal conductivity of each of the first metal layer 332 and the second metal layer 333 is higher than that of the first conductive member 31.
  • One example of obtaining this configuration is to print a resinate paste containing silver on both sides of a ceramic plate that will become the insulating layer 331, and then fire the resinate paste. The fired resinate paste becomes the first metal layer 332 and the second metal layer 333.
  • the first bonding layer 334 bonds the main surface 101 of the first die pad 10A and the first metal layer 332.
  • the second bonding layer 335 bonds the second metal layer 333 and the first surface 313A of the first intermediate portion 313 of the first conductive member 31.
  • Each of the first bonding layer 334 and the second bonding layer 335 contains a metal element.
  • the metal element is tin (Sn).
  • the melting points of each of the first bonding layer 334 and the second bonding layer 335 are set lower than the melting points of each of the first metal layer 332 and the second metal layer 333.
  • the first bonding layer 334 and the second bonding layer 335 are, for example, solder.
  • the semiconductor device A10 further includes a first conductive bonding layer 34, as shown in FIGS. 7 to 10.
  • the first conductive bonding layer 34 conductively bonds the first electrodes 211 of the two first semiconductor elements 21A to the two first bonding portions 311.
  • the first conductive bonding layer 34 is, for example, solder.
  • the first conductive bonding layer 34 may be a sintered metal.
  • the semiconductor device A10 further includes a second conductive bonding layer 35, as shown in FIGS. 9 and 13.
  • the second conductive bonding layer 35 conductively bonds the second seat portion 113 of the first lead 11 and the second bonding portion 312 .
  • the second conductive bonding layer 35 is, for example, solder.
  • the second conductive bonding layer 35 may be made of sintered metal.
  • the second conductive member 32 is electrically connected to the first electrodes 211 of the two second semiconductor elements 21B and the first seat portion 103 of the first die pad 10A. Thereby, the first electrode 211 of each of the two second semiconductor elements 21B is electrically connected to the first die pad 10A and the second electrode 212 of each of the two first semiconductor elements 21A.
  • the second conductive member 32 contains copper or a copper alloy.
  • the second conductive member 32 is a metal clip.
  • the second conductive member 32 has two third joint parts 321, a fourth joint part 322, and a second intermediate part 323.
  • the two third bonding parts 321 are individually conductively bonded to the first electrodes 211 of the two second semiconductor elements 21B.
  • Each of the two third joint parts 321 is a bifurcated part separated from each other in the third direction y.
  • the two third joints 321 are separated from each other in the third direction y.
  • the fourth bonding portion 322 is electrically conductively bonded to the first seat portion 103 of the first die pad 10A.
  • the fourth joint 322 extends in the third direction y. At least a portion of the fourth joint portion 322 is accommodated in the first seat portion 103.
  • the second intermediate part 323 connects the two third joint parts 321 and the fourth joint part 322.
  • the second intermediate portion 323 straddles between the first die pad 10A and the second die pad 10B.
  • the semiconductor device A10 further includes a third conductive bonding layer 36, as shown in FIGS. 7, 8, and 11.
  • the third conductive bonding layer 36 conductively bonds the first electrodes 211 of the two second semiconductor elements 21B and the two third bonding portions 321.
  • the third conductive bonding layer 36 is, for example, solder.
  • the third conductive bonding layer 36 may be made of sintered metal.
  • the semiconductor device A10 further includes a fourth conductive bonding layer 37, as shown in FIGS. 8 and 12.
  • the fourth conductive bonding layer 37 conductively bonds the first seat portion 103 of the first die pad 10A and the fourth bonding portion 322.
  • the fourth conductive bonding layer 37 is, for example, solder.
  • the fourth conductive bonding layer 37 may be a sintered metal.
  • each of the plurality of second chamfers 324 has a third edge 324A, a fourth edge 324B, and a second connecting edge 324C when viewed in the first direction z.
  • the third edge 324A extends in a direction perpendicular to the first direction z.
  • the fourth edge 324B extends in a direction perpendicular to the first direction z, which is different from the direction in which the third edge 324A extends.
  • the second connecting edge 324C smoothly connects the third edge 324A and the fourth edge 324B.
  • each of the third edge 324A and the fourth edge 324B is a tangent to the second connecting edge 324C.
  • the second connecting edge 324C is away from the intersection P2 of the extension line L3 of the third edge 324A and the extension line L4 of the fourth edge 324B.
  • one of the two first wires 41 connects the first semiconductor element 21A that is located closest to the first gate terminal 14A among the two first semiconductor elements 21A.
  • the third electrode 213 and the covering portion 142 of the first gate terminal 14A are electrically connected to each other.
  • the other first wire 41 of the two first wires 41 is connected to the second semiconductor element 21B located closest to the second gate terminal 14B among the two second semiconductor elements 21B.
  • the third electrode 213 and the covering portion 142 of the second gate terminal 14B are electrically connected to each other.
  • one of the two first relay wires 43 connects the third electrode 213 of one first semiconductor element 21A and the third electrode of the other first semiconductor element 21A. 213 and is electrically conductively connected.
  • the other first relay wire 43 among the two first relay wires 43 connects the third electrode 213 of one second semiconductor element 21B and the third electrode of the other second semiconductor element 21B. 213 and is electrically conductively connected.
  • the first gate terminal 14A is electrically connected to the third electrode 213 of each of the two first semiconductor elements 21A through the two first wires 41 and the two first relay wires 43.
  • the second gate terminal 14B is electrically connected to the third electrode 213 of each of the two second semiconductor elements 21B.
  • one of the two second wires 42 connects the first semiconductor element 21A that is located closest to the first detection terminal 15A among the two first semiconductor elements 21A.
  • the fourth electrode 214 is electrically conductively bonded to the covering portion 152 of the first detection terminal 15A.
  • the other second wire 42 among the two second wires 42 connects the second semiconductor element 21B located closest to the second detection terminal 15B among the two second semiconductor elements 21B.
  • the fourth electrode 214 is electrically conductively bonded to the covering portion 152 of the second detection terminal 15B.
  • one of the two second relay wires 44 is connected to one of the two fourth electrodes 214 of one first semiconductor element 21A and the other first semiconductor element 21A. It is electrically conductively bonded to one of the two fourth electrodes 214 .
  • one of the two second relay wires 44 is connected to one of the two fourth electrodes 214 of one second semiconductor element 21B and the other second semiconductor element 21B. It is electrically conductively bonded to one of the two fourth electrodes 214 .
  • the first detection terminal 15A is electrically connected to the two fourth electrodes 214 of each of the two first semiconductor elements 21A through the two second wires 42 and the two second relay wires 44.
  • the second detection terminal 15B is electrically connected to the two fourth electrodes 214 of each of the two second semiconductor elements 21B.
  • the semiconductor device A10 includes a first die pad 10A to which the first semiconductor element 21A is bonded, a first conductive member 31 which is conductively bonded to the first semiconductor element 21A and the first lead 11, and a first die pad 10A to the first lead 11.
  • a pillow member 33 located between the conductive member 31 and the conductive member 31 is provided.
  • the pillow member 33 is in contact with the first die pad 10A and the first conductive member 31.
  • the pillow member 33 has an insulating layer 331.
  • the thermal conductivity of the insulating layer 331 is higher than that of the first conductive member 31 .
  • the heat generated from the first conductive member 31 due to the conduction between the first semiconductor element 21A and the first lead 11 is more easily conducted to the first die pad 10A than to the sealing resin 50.
  • the heat dissipation efficiency of the first conductive member 31 can be improved. Therefore, according to this configuration, in the semiconductor device A10, it is possible to improve the heat dissipation efficiency while flowing a larger current.
  • the pillow member 33 has a first metal layer 332, a second metal layer 333, a first bonding layer 334, and a second bonding layer 335.
  • Each of the first bonding layer 334 and the second bonding layer 335 contains a metal element.
  • the melting points of each of the first bonding layer 334 and the second bonding layer 335 are lower than the melting points of each of the first metal layer 332 and the second metal layer 333.
  • the pillow member 33 can be electrically bonded to the first die pad 10A and the first conductive member 31 at the same time as the pillow member 33 is electrically bonded to the first semiconductor element 21A and the first lead 11 by reflow. can.
  • each of the first metal layer 332 and the second metal layer 333 is greater than the thickness of the insulating layer 331.
  • heat is easily conducted in each of the first metal layer 332 and the second metal layer 333 in a direction perpendicular to the first direction z. This reduces thermal resistance at the interface between the insulating layer 331 and the first metal layer 332 and at the interface between the insulating layer 331 and the second metal layer 333, thereby further improving the heat dissipation performance of the pillow member 33. Can be done.
  • each of the first metal layer 332 and the second metal layer 333 contains silver
  • the thermal conductivity of each of the first metal layer 332 and the second metal layer 333 is equal to the thermal conductivity of the first conductive member 31. be higher than Thereby, the heat dissipation of the pillow member 33 can be improved compared to the case where each of the first metal layer 332 and the second metal layer 333 contains copper.
  • the first conductive member 31 has a first joint portion 311, a second joint portion 312, and a first intermediate portion 313.
  • the first intermediate portion 313 has a first surface 313A that is in contact with the pillow member 33, and a second surface 313B that is separated from the first surface 313A and faces the main surface 101 of the first die pad 10A.
  • the first surface 313A is located between the main surface 101 and the second surface 313B in the first direction z.
  • the pillow member 33 When viewed in the first direction z, the pillow member 33 includes a portion that protrudes outward from the first intermediate portion 313 of the first conductive member 31.
  • heat is easily conducted in the pillow member 33 in a direction perpendicular to the first direction z. This reduces the thermal resistance at the interface between the pillow member 33 and the first intermediate portion 313, so that the heat dissipation efficiency of the first conductive member 31 can be further improved.
  • the first intermediate portion 313 of the first conductive member 31 is provided with a first chamfered portion 314 having a first edge 314A, a second edge 314B, and a first connecting edge 314C.
  • the first connecting edge 314C smoothly connects the first surface 313A and the second surface 313B.
  • the first connecting edge 314C is away from the intersection P2 of the extension line L1 of the first edge 314A and the extension line L2 of the second edge 314B.
  • the first die pad 10A is provided with a first seat portion 103 that is recessed from the main surface 101. A portion of the second conductive member 32 is accommodated in the first seat portion 103. With this configuration, when the second conductive member 32 is conductively bonded to the second semiconductor element 21B and the first die pad 10A, the rotation of the second conductive member 32 around the first direction z is prevented by the first seat portion 103. Regulated. Thereby, it is possible to suppress misalignment of the second conductive member 32 with respect to the second semiconductor element 21B.
  • the first lead 11 is provided with a second seat portion 113 that is recessed in the first direction z from the side where the first intermediate portion 313 of the first conductive member 31 is located in the first direction z. A portion of the second joint portion 312 of the first conductive member 31 is accommodated in the second seat portion 113.
  • the second lead 12 is connected to the first die pad 10A.
  • the third lead 13 is connected to the second die pad 10B.
  • the back surface 102 of each of the two die pads 10 is exposed from the sealing resin 50.
  • the sealing resin 50 has a plurality of recesses 56 recessed from the third side surface 55 in the third direction y.
  • the sealing resin 50 has a groove 57 that is recessed from the bottom surface 52 and divides the back surface 102 of each of the two die pads 10 when viewed in the first direction z.
  • FIGS. 17 to 19 A semiconductor device A20 according to a second embodiment of the present disclosure will be described based on FIGS. 17 to 19.
  • elements that are the same as or similar to those of the semiconductor device A10 described above are given the same reference numerals, and redundant explanation will be omitted.
  • FIG. 17 corresponds to FIG. 7 showing the semiconductor device A10.
  • FIG. 18 corresponds to FIG. 14 showing the semiconductor device A10.
  • the configuration of the first conductive member 31 is different from the configuration of the semiconductor device A10.
  • the first intermediate portion 313 of the first conductive member 31 has a first portion 313D and a second portion 313E instead of the bent portion 313C.
  • the first portion 313D includes a first surface 313A.
  • the second portion 313E includes a second surface 313B and is connected to the first portion 313D.
  • the dimension t1 of the first portion 313D in the first direction z is larger than the dimension t2 of the second portion 313E in the first direction z.
  • the semiconductor device A20 includes a first die pad 10A to which the first semiconductor element 21A is bonded, a first conductive member 31 which is conductively bonded to the first semiconductor element 21A and the first lead 11, and a first die pad 10A to the first lead 11.
  • a pillow member 33 located between the conductive member 31 and the conductive member 31 is provided.
  • the pillow member 33 is in contact with the first die pad 10A and the first conductive member 31.
  • the pillow member 33 has an insulating layer 331.
  • the thermal conductivity of the insulating layer 331 is higher than that of the first conductive member 31 . Therefore, according to this configuration, even in the semiconductor device A20, it is possible to improve the heat dissipation efficiency while flowing a larger current. Further, the semiconductor device A20 has the same configuration as the semiconductor device A10, so that the same effects as the semiconductor device A10 can be achieved.
  • the first intermediate portion 313 of the first conductive member 31 has a first portion 313D and a second portion 313E instead of the bent portion 313C.
  • the dimension t1 of the first portion 313D in the first direction z is larger than the dimension t2 of the second portion 313E in the first direction z.
  • FIGS. 20 to 22 A semiconductor device A30 according to a third embodiment of the present disclosure will be described based on FIGS. 20 to 22.
  • elements that are the same as or similar to those of the semiconductor device A10 described above are given the same reference numerals, and redundant explanation will be omitted.
  • FIG. 20 corresponds to FIG. 7 showing the semiconductor device A10.
  • FIG. 21 corresponds to FIG. 14 showing the semiconductor device A10.
  • the configuration of the first die pad 10A is different from the configuration of the semiconductor device A10.
  • the first die pad 10A has a bulky portion 104 protruding from the main surface 101.
  • the bulky part 104 has a seat surface 104A facing the same side as the main surface 101 in the first direction z.
  • the first bonding layer 334 of the pillow member 33 bonds the seat surface 104A and the first metal layer 332 of the pillow member 33. Therefore, the pillow member 33 is in contact with the seat surface 104A.
  • the area of the seat surface 104A is larger than the area of the pillow member 33 when viewed in the first direction z. Therefore, when viewed in the first direction z, the bulky portion 104 includes a portion that protrudes outward from the pillow member 33.
  • FIG. 23 corresponds to FIG. 22 showing the semiconductor device A30.
  • the first conductive member 31 included in the semiconductor device A31 is similar to the first conductive member 31 included in the semiconductor device A20.
  • the semiconductor device A30 includes a first die pad 10A to which the first semiconductor element 21A is bonded, a first conductive member 31 which is conductively bonded to the first semiconductor element 21A and the first lead 11, and a first die pad 10A to the first lead 11.
  • a pillow member 33 located between the conductive member 31 and the conductive member 31 is provided.
  • the pillow member 33 is in contact with the first die pad 10A and the first conductive member 31.
  • the pillow member 33 has an insulating layer 331.
  • the thermal conductivity of the insulating layer 331 is higher than that of the first conductive member 31 . Therefore, according to this configuration, even in the semiconductor device A30, it is possible to improve the heat dissipation efficiency while flowing a larger current.
  • the semiconductor device A30 has the same configuration as the semiconductor device A10, so that it can achieve the same effects as the semiconductor device A10.
  • the first die pad 10A has a bulky portion 104 protruding from the main surface 101.
  • the pillow member 33 is in contact with the bulky part 104.
  • the bulky portion 104 of the first die pad 10A serves as a positioning means for the pillow member 33. Furthermore, the surface tension acting on the first bonding layer 334 increases as the molten first bonding layer 334 comes into contact with the periphery of the seating surface 104A of the bulky part 104. As a result, self-alignment acts on the first bonding layer 334, so that displacement of the pillow member 33 with respect to the bulky part 104 can be suppressed.
  • the bulky portion 104 of the first die pad 10A When viewed in the first direction z, the bulky portion 104 of the first die pad 10A includes a portion that protrudes outward from the pillow member 33.
  • heat is easily conducted in the bulky part 104 in a direction perpendicular to the first direction z. This reduces the thermal resistance at the interface between the bulky part 104 and the pillow member 33, so that the heat dissipation of the pillow member 33 can be improved.
  • FIGS. 24 and 25 A semiconductor device A40 according to a fourth embodiment of the present disclosure will be described based on FIGS. 24 and 25.
  • elements that are the same as or similar to those of the semiconductor device A10 described above are given the same reference numerals, and redundant explanation will be omitted.
  • FIG. 24 corresponds to FIG. 7 showing the semiconductor device A10.
  • FIG. 25 corresponds to FIG. 15 showing the semiconductor device A10.
  • the configuration of the first conductive member 31 is different from the configuration of the semiconductor device A30 described above.
  • the first intermediate portion 313 of the first conductive member 31 does not include the second surface 313B, the bent portion 313C, the first portion 313D, and the second portion 313E.
  • the first conductive member 31 is a flat plate including a first surface 313A.
  • the first surface 313A faces the main surface 101 of the first die pad 10A.
  • the semiconductor device A40 includes a first die pad 10A to which the first semiconductor element 21A is bonded, a first conductive member 31 which is conductively bonded to the first semiconductor element 21A and the first lead 11, and a first die pad 10A and the first die pad 10A to which the first die pad 10A is bonded.
  • a pillow member 33 located between the conductive member 31 and the conductive member 31 is provided. The pillow member 33 is in contact with the first die pad 10A and the first conductive member 31.
  • the pillow member 33 has an insulating layer 331. The thermal conductivity of the insulating layer 331 is higher than that of the first conductive member 31 .
  • the semiconductor device A40 has the same configuration as the semiconductor device A10, so that it can achieve the same effects as the semiconductor device A10.
  • the first die pad 10A has a bulky portion 104 protruding from the main surface 101.
  • the pillow member 33 is in contact with the bulky part 104.
  • the first intermediate portion 313 of the first conductive member 31 is a flat plate including a first surface 313A.
  • the present disclosure includes the embodiments described in the appendix below. Additional note 1. a first die pad; a first semiconductor element bonded to the first die pad; a first lead separated from the first die pad; a first conductive member electrically connected to the first semiconductor element and the first lead; a sealing resin that covers the first semiconductor element and the first conductive member; a pillow member located between the first die pad and the first conductive member, The pillow member is in contact with the first die pad and the first conductive member, The pillow member has an insulating layer, The semiconductor device, wherein the insulating layer has a higher thermal conductivity than the sealing resin. Appendix 2.
  • the pillow member has a first metal layer, a second metal layer, a first bonding layer, and a second bonding layer, the first metal layer is located between the first die pad and the insulating layer, The second metal layer is located between the insulating layer and the first conductive member, The first bonding layer bonds the first die pad and the first metal layer, The second bonding layer bonds the second metal layer and the first conductive member,
  • the semiconductor device according to appendix 1 wherein each of the first bonding layer and the second bonding layer contains a metal element.
  • Appendix 3 The semiconductor device according to appendix 2, wherein each of the first bonding layer and the second bonding layer has a lower melting point than each of the first metal layer and the second metal layer. Appendix 4.
  • each of the first metal layer and the second metal layer has a thickness greater than a thickness of the insulating layer.
  • Appendix 5 The semiconductor device according to appendix 3, wherein each of the first metal layer and the second metal layer has a higher thermal conductivity than the first conductive member.
  • Appendix 6. The semiconductor device according to appendix 5, wherein each of the first metal layer and the second metal layer contains silver.
  • Appendix 7. The semiconductor device according to any one of Supplementary Notes 1 to 6, wherein the insulating layer includes ceramics. Appendix 8.
  • the first die pad faces in a first direction and has a main surface to which the first semiconductor element is bonded
  • the first conductive member includes a first joint part conductively joined to the first semiconductor element, a second joint part conductively joined to the first lead, and the first joint part and the second joint part.
  • an intermediate portion connecting the The intermediate portion has a first surface in contact with the pillow member, and a second surface that is away from the first surface and faces the main surface, 8.
  • the semiconductor device according to any one of appendices 1 to 7, wherein the first surface is located between the main surface and the second surface in the first direction.
  • the intermediate portion has a bent portion bent from the second surface toward the main surface,
  • the intermediate part has a first part including the first surface, and a second part including the second surface and connected to the first part,
  • the semiconductor device according to appendix 8 wherein a dimension of the first portion in the first direction is larger than a dimension of the second portion in the first direction.
  • Appendix 11 The semiconductor device according to any one of appendices 8 to 10, wherein the pillow member is in contact with the main surface.
  • Appendix 12. The first die pad has a bulky part protruding from the main surface, The semiconductor device according to any one of appendices 8 to 11, wherein the pillow member is in contact with the bulky part.
  • Appendix 13
  • the intermediate portion When viewed in the first direction, the intermediate portion has a first edge, a second edge, and a connecting edge;
  • the first edge extends in a direction perpendicular to the first direction
  • the second edge extends in a direction perpendicular to the first direction and different from the direction in which the first edge extends,
  • the connecting edge smoothly connects the first edge and the second edge, 13.
  • the semiconductor device according to any one of appendices 8 to 12, wherein the connecting edge is separated from the intersection of the extension line of the first edge and the extension line of the second edge when viewed in the first direction.
  • Appendix 14 The first die pad has a back surface facing opposite to the main surface in the first direction, The first semiconductor element is conductively bonded to the main surface, 14.
  • Appendix 15 a second die pad; a second semiconductor element conductively bonded to the second die pad; further comprising a second conductive member conductively joined to the second semiconductor element and the first die pad, The second semiconductor element and the second conductive member are covered with the sealing resin, The semiconductor device according to appendix 14, wherein the second die pad is exposed from the sealing resin.
  • Appendix 16 The first die pad is provided with a first seat recessed from the main surface, 16.

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
PCT/JP2023/022270 2022-07-19 2023-06-15 半導体装置 Ceased WO2024018790A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024534968A JPWO2024018790A1 (https=) 2022-07-19 2023-06-15

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022115058 2022-07-19
JP2022-115058 2022-07-19

Publications (1)

Publication Number Publication Date
WO2024018790A1 true WO2024018790A1 (ja) 2024-01-25

Family

ID=89617491

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/022270 Ceased WO2024018790A1 (ja) 2022-07-19 2023-06-15 半導体装置

Country Status (2)

Country Link
JP (1) JPWO2024018790A1 (https=)
WO (1) WO2024018790A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024176740A1 (ja) * 2023-02-20 2024-08-29 ローム株式会社 半導体装置および車両

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018133481A (ja) * 2017-02-16 2018-08-23 三菱電機株式会社 半導体モジュールおよびインバータ装置
US20190287880A1 (en) * 2018-03-19 2019-09-19 Stmicroelectronics S.R.L. Smds integration on qfn by 3d stacked solution
JP2021068783A (ja) * 2019-10-21 2021-04-30 ルネサスエレクトロニクス株式会社 半導体装置
WO2022030244A1 (ja) * 2020-08-05 2022-02-10 ローム株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018133481A (ja) * 2017-02-16 2018-08-23 三菱電機株式会社 半導体モジュールおよびインバータ装置
US20190287880A1 (en) * 2018-03-19 2019-09-19 Stmicroelectronics S.R.L. Smds integration on qfn by 3d stacked solution
JP2021068783A (ja) * 2019-10-21 2021-04-30 ルネサスエレクトロニクス株式会社 半導体装置
WO2022030244A1 (ja) * 2020-08-05 2022-02-10 ローム株式会社 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024176740A1 (ja) * 2023-02-20 2024-08-29 ローム株式会社 半導体装置および車両

Also Published As

Publication number Publication date
JPWO2024018790A1 (https=) 2024-01-25

Similar Documents

Publication Publication Date Title
JP7795476B2 (ja) 半導体装置
WO2022075003A1 (ja) 半導体装置
WO2023162722A1 (ja) 半導体装置および半導体モジュール
WO2024116873A1 (ja) 半導体モジュール
WO2024018790A1 (ja) 半導体装置
JP7545845B2 (ja) 半導体装置
JP7633257B2 (ja) 半導体装置
JPWO2020149225A1 (ja) 半導体装置
WO2024029336A1 (ja) 半導体装置
WO2023149257A1 (ja) 半導体装置
WO2021215294A1 (ja) 半導体装置
US20250167163A1 (en) Semiconductor device
WO2025142335A1 (ja) 半導体装置
US20250233085A1 (en) Semiconductor device
US20240304589A1 (en) Semiconductor device
WO2023032667A1 (ja) 半導体装置、および半導体装置の取付け構造
WO2022259825A1 (ja) 半導体装置
WO2024106219A1 (ja) 半導体装置
JP7147187B2 (ja) 半導体装置
WO2023199808A1 (ja) 半導体装置
WO2026053967A1 (ja) 半導体モジュール
WO2024241819A1 (ja) 電子装置
WO2023218943A1 (ja) 半導体装置
WO2023112723A1 (ja) 半導体装置、および半導体装置の実装体
CN116686086A (zh) 半导体装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23842721

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2024534968

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 23842721

Country of ref document: EP

Kind code of ref document: A1