WO2024014406A1 - 保護シート - Google Patents

保護シート Download PDF

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Publication number
WO2024014406A1
WO2024014406A1 PCT/JP2023/025257 JP2023025257W WO2024014406A1 WO 2024014406 A1 WO2024014406 A1 WO 2024014406A1 JP 2023025257 W JP2023025257 W JP 2023025257W WO 2024014406 A1 WO2024014406 A1 WO 2024014406A1
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Prior art keywords
protective layer
liquid
semiconductor wafer
protected
semiconductor
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PCT/JP2023/025257
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English (en)
French (fr)
Japanese (ja)
Inventor
慧 佐藤
雄一郎 宍戸
尚英 高本
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Nitto Denko Corp
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Nitto Denko Corp
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Priority to CN202380046622.5A priority Critical patent/CN119547182A/zh
Priority to KR1020247038393A priority patent/KR20250034280A/ko
Publication of WO2024014406A1 publication Critical patent/WO2024014406A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C08L101/12—Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity
    • C08L101/14—Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity the macromolecular compounds being water soluble or water swellable, e.g. aqueous gels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/077—Connecting of TAB connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/701—Tape-automated bond [TAB] connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials

Definitions

  • the present invention relates to a protective sheet used for manufacturing electronic components such as semiconductor integrated circuits, for example.
  • protective sheets have been known that are used, for example, to protect at least a portion of the surface of an object to be protected in the manufacture of semiconductor devices.
  • the object to be protected by this type of protective sheet is, for example, a substrate such as a semiconductor wafer.
  • This type of protective sheet is used by being attached to at least a portion of the surface of an object to be protected during the manufacturing process of a semiconductor device.
  • the method for manufacturing semiconductor devices involves a pre-process of forming a circuit surface on one side of a disk-shaped bare wafer using highly integrated electronic circuits, and cutting out semiconductor chips from the semiconductor wafer on which the circuit surface has been formed. and a post-process for assembling.
  • the post-process in addition to using a dicing tape having a base material layer and an adhesive layer and a die-bonding sheet laminated on the dicing tape and adhered to the semiconductor wafer, for example, the above-mentioned protective sheet is used.
  • the post-process is a step of protecting the circuit surface of a disk-shaped semiconductor wafer by covering it with a protective sheet as described above; a mounting step of overlapping the surface of the semiconductor wafer (the surface on which circuit components are not arranged) with the die bond sheet on the dicing tape and fixing the semiconductor wafer to the dicing tape via the die bond sheet; a dicing process in which a large number of semiconductor chips (dies) are obtained by cutting the semiconductor wafer and die bond sheet into small pieces; An expansion process in which the dicing tape is stretched in the radial direction of the semiconductor wafer to increase the distance between adjacent semiconductor chips (dies); a pickup step of peeling off between the fragmented die-bond sheet and the dicing tape and taking out the semiconductor chip to which the fragmented die-bond sheet is stuck; a die-bonding step in which the semiconductor chip with the diced die-bond sheet attached is bonded to an adherend via the diced die-bond sheet;
  • the method includes a curing step of thermally curing the fragmente
  • the above-mentioned protective sheet is, for example, a protective sheet that is attached to a surface to be protected and then removed in order to prevent deposits from adhering to the surface (surface to be protected) of a semiconductor wafer or the like during a film forming process such as vapor deposition.
  • a protective sheet is known (for example, Patent Document 1).
  • the protective sheet described in Patent Document 1 has a resin composition containing an oxyalkylene group-containing polyvinyl alcohol resin with a saponification degree of 55 mol% or less. Since the resin composition of the protective sheet described in Patent Document 1 is water-soluble, it can be easily removed with relatively low-temperature water after protecting a portion of the surface of a substrate such as a semiconductor wafer. Moreover, since the resin composition of the protective sheet described in Patent Document 1 contains the above-mentioned polyvinyl alcohol resin, it can adhere appropriately to the surface to be protected.
  • the resin composition of the protective sheet described in Patent Document 1 can properly adhere to the object to be protected, the processability is not necessarily high because it simply contains a polyvinyl alcohol resin and additives. There is a problem that it is not good. Specifically, when cutting a resin composition formed into a sheet into a protective layer of a desired size, microcracks are likely to occur in the portions of the protective layer that are subjected to cutting force. However, there is a problem that the processability is not necessarily good. As described above, the protective layer formed of the resin composition of the protective sheet described in Patent Document 1 is relatively easily removed by a liquid containing water and has moderate adhesion to the object to be protected, but it is difficult to process. The problem is that the properties are not necessarily good.
  • a protective sheet according to the present invention includes a protective layer that is removed by a liquid containing water after protecting at least a part of the surface of an object to be protected,
  • the protective layer includes a solid hydrophilic polymer and a liquid compound containing a hydrophilic group in its molecule.
  • FIG. 2 is a schematic cross-sectional view of an example of the protective sheet of the present embodiment cut in the thickness direction.
  • FIG. 2 is a schematic cross-sectional view showing an example of a wetting process in a method for manufacturing an electronic component device.
  • FIG. 3 is a schematic cross-sectional view showing an example of a protection step in a method for manufacturing an electronic component device.
  • FIG. 2 is a schematic cross-sectional view showing an example of a state after a protection step in a method for manufacturing an electronic component device.
  • FIG. 2 is a schematic cross-sectional view showing an example of a removal process in a method for manufacturing an electronic component device (a schematic cross-sectional view showing an example of how a protective layer is removed from a protected surface of an object to be protected by a liquid containing water).
  • FIG. 2 is a cross-sectional view of an example of a dicing tape cut in the thickness direction.
  • FIG. 2 is a cross-sectional view of an example of a dicing die bond film cut in the thickness direction.
  • FIG. 3 is a schematic cross-sectional view illustrating the state after a mounting step and a protection step in the method for manufacturing a semiconductor device of the first example.
  • FIG. 3 is a schematic cross-sectional view showing a state in the middle of a blade dicing process in the first example of the semiconductor device manufacturing method.
  • FIG. 3 is a schematic cross-sectional view illustrating the state after a blade dicing process in the method for manufacturing a semiconductor device of the first example.
  • FIG. 3 is a schematic cross-sectional view showing a removal step in the first example of the semiconductor device manufacturing method.
  • FIG. 3 is a schematic cross-sectional view showing a pickup step in the first example of the semiconductor device manufacturing method.
  • FIG. 3 is a schematic cross-sectional view showing a bonding process in the first example of the semiconductor device manufacturing method.
  • FIG. 7 is a schematic cross-sectional view showing the semiconductor wafer after half-cut processing in the second example of the semiconductor device manufacturing method.
  • FIG. 7 is a schematic cross-sectional view showing the state after back grinding in the second example of the semiconductor device manufacturing method.
  • FIG. 7 is a schematic cross-sectional view showing a mounting process in a second example of the semiconductor device manufacturing method.
  • FIG. 7 is a schematic cross-sectional view illustrating an expanding process in a second example of the semiconductor device manufacturing method.
  • FIG. 7 is a schematic cross-sectional view showing a modified example of the state of the semiconductor wafer after half-cut processing in the second example of the semiconductor device manufacturing method.
  • FIG. 7 is a schematic cross-sectional view showing a modified example of the state after back grinding in the second example of the semiconductor device manufacturing method.
  • FIG. 7 is a schematic cross-sectional view showing a modification of the mounting process in the second example of the semiconductor device manufacturing method.
  • FIG. 7 is a schematic cross-sectional view showing a state during a stealth processing step in a method for manufacturing a semiconductor device according to a third example.
  • FIG. 7 is a schematic cross-sectional view showing the state after the stealth processing step in the third example of the semiconductor device manufacturing method.
  • FIG. 7 is a schematic cross-sectional view illustrating the expansion process in the third example of the semiconductor device manufacturing method.
  • FIG. 7 is a schematic cross-sectional view showing a removal process in a third example of the semiconductor device manufacturing method.
  • FIG. 7 is a schematic cross-sectional view showing a modified example of the state before back grinding in the third example of the semiconductor device manufacturing method.
  • FIG. 7 is a schematic cross-sectional view showing a modified example of the state after back grinding in the third example of the semiconductor device manufacturing method.
  • FIG. 7 is a schematic cross-sectional view showing a modification of the mounting process in the third example of the semiconductor device manufacturing method.
  • the protective sheet 1 of this embodiment protects at least a portion of the surface of the object to be protected, and when it comes into contact with a liquid containing water, at least a portion of the sheet dissolves and the surface of the object to be protected is protected.
  • a protective layer 11 is removed from the protective layer 11.
  • the protective layer 11 includes a solid hydrophilic polymer and a liquid compound containing a hydrophilic group in the molecule.
  • the protective sheet 1 may include two release liners 15 arranged to sandwich the protective layer 11, as shown in FIG. 1, for example.
  • the surface of the release liner 15 in contact with the protective layer 11 may be subjected to a release treatment.
  • the release liner 15 may be, for example, a resin film.
  • the resin film include polyethylene terephthalate resin film, polyethylene film, and polypropylene film.
  • the protective layer 11 is used, for example, to temporarily protect a protected surface (hereinafter also referred to as a protected surface) of an object to be protected. By overlapping the protective layer 11 on the protected surface, it is possible to prevent foreign matter from adhering to the protected surface until the protective layer 11 overlapping the protected surface is removed.
  • Examples of objects to be protected include substrates that constitute electronic component devices such as semiconductor devices.
  • Examples of the substrate include a circuit board such as a semiconductor wafer W.
  • the protective layer 11 when the protective layer 11 is attached to a surface to be protected (circuit surface) of a substrate (semiconductor wafer) and is cut into pieces together with the substrate (semiconductor wafer), the protective layer 11 protects against debris that may be generated as a result of the cutting into pieces. Since foreign matter can be prevented from adhering to the surface to be protected (circuit surface), the surface to be protected (circuit surface) can be protected.
  • the protective layer 11 described above has flexibility that allows it to be deformed with relatively weak force. Further, the above-mentioned protective layer 11 has adhesiveness that allows it to adhere to the protected surface of the substrate, for example.
  • the above-mentioned protective layer 11 may have physical properties such that it can be made into small pieces by being stretched in the plane direction.
  • the protective layer 11 having such physical properties is suitably used when manufacturing an electronic component device through a stealth processing process using a stealth dicing device, which will be described later. Similarly, it is suitably used when manufacturing electronic component devices through the DBG process (described in detail later). Note that the above-mentioned protective layer 11 does not need to have the above-mentioned physical properties since it can also be suitably used when manufacturing an electronic component device through a blade dicing process (described in detail later).
  • the thickness of the protective layer 11 is not particularly limited, but is, for example, 1 ⁇ m or more and 100 ⁇ m or less. Such thickness may be 3 ⁇ m or more, or 5 ⁇ m or more. Moreover, such thickness may be 40 ⁇ m or less. In addition, when the protective layer 11 is a laminate, the above thickness is the total thickness of the laminate.
  • the hydrophilic polymer contained in the protective layer 11 is solid at room temperature.
  • the liquid compound containing a hydrophilic group in its molecule, which is contained in the protective layer 11, is liquid at room temperature.
  • a liquid compound containing a hydrophilic group in its molecule may be simply referred to as a "liquid component.”
  • the property at room temperature is determined as follows. Specifically, if the viscosity is 200 [Pas ⁇ s] or less (200,000 [mPas ⁇ s] or less) at 25°C, it is determined that it is a liquid component, and if it is not liquid, it is determined that it is solid.
  • the viscosity is measured using an E-type viscometer (for example, product name "TV-35" manufactured by Toki Sangyo Co., Ltd.) under measurement conditions of 25° C. and 20 rpm.
  • each component contained in the above-mentioned protective layer 11 a trace amount of each compounded component is extracted from the protective layer 11 and analyzed by, for example, infrared absorption spectroscopy (IR). The molecular structure of each ingredient can be investigated. If the compounded component is a polymer compound, the molecular weight of the polymer compound can be further determined by gel permeation chromatography (GPC). The properties of each component (solid or liquid) can be confirmed by separately purchasing the compounds identified by these analytical methods and measuring the viscosity as described above.
  • IR infrared absorption spectroscopy
  • the hydrophilic polymer has a hydrophilic group in its molecule.
  • the hydrophilic groups of the above-mentioned hydrophilic polymers include, for example, hydroxy groups, carboxy groups (including salt states), sulfonic acid groups (including salt states), pyrrolidone groups, and amine-containing groups (including quaternary ammonium cation states). ), and polyoxyethylene groups. Since the above-mentioned hydrophilic polymer contains a hydroxy group as a hydrophilic group in the molecule, the protective layer 11 can adhere more fully to the protected surface of the object to be protected.
  • the protective layer 11 includes a hydrophilic polymer having a main chain and a plurality of side chains in the molecule, and each of the plurality of side chains has either an ester group or a hydrophilic group.
  • the hydrophilic group may be a hydroxy group or a carboxy group.
  • the main chain of the above-mentioned hydrophilic polymer is, for example, a covalent chain produced by a radical polymerization reaction.
  • the main chain is vinyl acetate (vinyl acetate), alkyl (meth)acrylate ((meth)acrylic acid alkyl ester), hydroxyalkyl (meth)acrylate ((meth)acrylic acid hydroxyalkyl ester), (meth)acrylic acid Or, it is a covalent chain formed by a polymerization reaction of N-vinylpyrrolidone or the like.
  • Each of the plurality of side chains in the above hydrophilic polymer contains at least one of a hydrophilic group and an ester group.
  • some of the side chains have a hydrophilic group, and some of the other side chains have an ester group.
  • the hydrophilic group is, for example, at least one of a hydroxy group and a carboxy group.
  • the hydrophilic group may be placed at the terminal portion of the side chain or may be placed at the center portion of the side chain.
  • the hydrophilic group in the side chain is preferably located at the terminal portion of the side chain.
  • the hydrophilic group disposed at the terminal portion of the side chain may be bonded to the main chain via an ester group.
  • the groups may be arranged in the order of ester group, alkyl group, and hydrophilic group from the main chain toward the end of the side chain.
  • the ester group is preferably located at the center of the side chain.
  • an alkyl group having 1 to 4 carbon atoms is bonded to the main chain via an ester group.
  • hydrophilic polymers examples include polyvinyl alcohol (PVA) obtained by hydrolyzing a portion of the ester bonds in a vinyl acetate polymer, polyvinylpyrrolidone (PVP), and polyvinylpyrrolidone (PVP) containing a sulfonic acid group or a carboxy group in the molecule.
  • PVA polyvinyl alcohol
  • PVP polyvinylpyrrolidone
  • PVP polyvinylpyrrolidone
  • PVP polyvinylpyrrolidone
  • PVP polyvinylpyrrolidone
  • PVP polyvinylpyrrolidone
  • PVP polyvinylpyrrolidone
  • PVP polyvinylpyrrolidone
  • the above hydrophilic polymer is preferably water-soluble.
  • the water-solubility of the above-mentioned hydrophilic polymer can be confirmed, for example, as follows. When a thin film (thickness of 50 ⁇ m or less) of the above hydrophilic polymer is bonded to a silicon bare wafer and immersed in water at 25°C or 60°C, if the thin film completely dissolves at at least one of the temperatures (the wafer ), the hydrophilic polymer is water-soluble.
  • the above hydrophilic polymer is preferably at least one selected from the group consisting of polyvinyl alcohol, water-soluble polyester polymer, and polyethylene oxide.
  • the saponification degree (mol %) of the polyvinyl alcohol may be 50 or more and 100 or less.
  • the saponification degree of polyvinyl alcohol is preferably 55 or more, more preferably 60 or more, and even more preferably 65 or more.
  • the degree of saponification of polyvinyl alcohol is preferably 98 or less, more preferably 90 or less, and even more preferably 85 or less, since it can further improve the adhesion to the object to be protected such as a substrate. preferable.
  • the protective layer 11 contains components other than PVA, in order to avoid overlapping of peaks in the measurement chart, the measurement is performed after separating and extracting PVA by methanol extraction or the like.
  • the average degree of polymerization of the above polyvinyl alcohol is preferably 100 or more, more preferably 200 or more. Further, the average degree of polymerization is preferably 1200 or less, more preferably 1000 or less, and even more preferably 800 or less.
  • the average degree of polymerization of polyvinyl alcohol is 100 or more, it becomes easier to form the above-mentioned protective layer 11. That is, the processability of the protective layer 11 can be improved.
  • the average degree of polymerization of polyvinyl alcohol is 1200 or less, the hydrophilicity of polyvinyl alcohol is further increased, and the above-mentioned protective layer 11 is more easily dissolved in a liquid containing water. Moreover, the adhesion of the protective layer 11 to the object to be protected can be improved.
  • the above average degree of polymerization is determined by the following measurement method and measurement conditions.
  • ⁇ Measurement method and measurement conditions of average degree of polymerization> ⁇ Analyzer: Gel permeation chromatography analyzer (for example, Agilent's device name "1260Infinity")
  • ⁇ Column TSKgel G6000PWXL and TSKgel G3000PWXL (manufactured by Tosoh Corporation, series connection)
  • Eluent 0.2M sodium nitrate aqueous solution
  • Flow rate 0.8mL/min
  • ⁇ Injection volume 100 ⁇ L
  • RI Differential refractometer (RI) - Standard sample: PEG standard sample and PVA standard sample
  • the mass average molecular weight Mw of the sample to be measured (PVA) and the PVA standard sample whose average degree of polymerization is known is calculated by GPC measurement using the PEG standard sample.
  • a calibration curve is created from the average degree of polymerization of the PVA standard sample and the calculated mass average molecular weight Mw of the PVA standard sample. Using this calibration curve, the average degree of polymerization of the sample to be measured (PVA) is determined from the mass average molecular weight Mw of the sample to be measured (PVA).
  • the above water-soluble polyester polymer has a polyhydric carboxylic acid residue and a polyol residue.
  • the above-mentioned water-soluble polyester is, for example, a polymerization product of monomer components containing a polyhydric carboxylic acid component and a polyol component.
  • the water-soluble polyester polymer described above may further have at least one of an anionic hydrophilic group, a cationic hydrophilic group, and a nonionic hydrophilic group in the molecule.
  • anionic hydrophilic groups include sulfonic acid groups (including salt states), carboxy groups (including salt states), and the like.
  • Examples of the cationic hydrophilic group include amine-containing groups.
  • nonionic hydrophilic groups include polyoxyethylene groups.
  • the weight average molecular weight Mw of the above water-soluble polyester polymer (PES) is preferably 40,000 (40,000) or less.
  • the water-soluble polyester polymer described above can have a sufficiently low softening point. This can improve the adhesion of the protective layer 11 to the substrate (such as a semiconductor wafer).
  • the protective layer 11 can be more easily removed from the surface of the object to be protected using a liquid containing water.
  • the above polyethylene oxide (PEO) has a polyoxyethylene group as a hydrophilic group in the molecule.
  • the mass average molecular weight Mw of the above polyethylene oxide (PEO) is preferably 1,000,000 (1 million) or less.
  • the polyethylene oxide (PEO) described above can have a sufficiently low softening point. This can improve the adhesion of the protective layer 11 to the substrate (such as a semiconductor wafer).
  • the protective layer 11 can be efficiently removed from the surface of the object to be protected in a shorter time by using a liquid containing water.
  • the above polyacrylic acid has a carboxy group as a hydrophilic group in the molecule.
  • the above polyacrylic acid is a polymer obtained by polymerizing acrylic acid monomers or methacrylic acid monomers.
  • the mass ratio of the total constituent units of acrylic acid monomers or methacrylic acid monomers to the total constituent units is 90% by mass or more.
  • the molecular weight of the above polyacrylic acid may be, for example, 1,000 or more and 5,000,000 or less.
  • the above polyacrylic acid may be in the form of a salt such as a sodium salt, potassium salt, or ammonium salt.
  • the above expression "polyacrylic acid” includes polyacrylates such as sodium polyacrylate.
  • the above polyvinylacetamide has an amine-containing group as a hydrophilic group in the molecule. Specifically, the amine-containing group is represented by (-NH-CO-).
  • the polyvinylacetamide described above is a polymer of N-vinylacetamide monomers.
  • the above liquid component is a liquid compound containing a hydrophilic group in its molecule.
  • hydrophilic groups in the liquid component include hydroxy groups, carboxy groups (including salt states), sulfonic acid groups (including salt states), pyrrolidone groups, and amine-containing groups (including quaternary ammonium cation states). ), or a polyoxyethylene group.
  • the above liquid component may be a low molecular compound or a high molecular compound as long as it is liquid at room temperature (25° C.).
  • the above liquid components include polyethylene glycol that is liquid at room temperature, acrylic copolymer that is liquid at room temperature, ether-containing compound that is liquid at room temperature, polyoxyethylene polyoxypropylene glycol that is liquid at room temperature, and polyethylene glycol that is liquid at room temperature.
  • examples include cationic polymers, hydrophilic group-containing monomers that are liquid at room temperature, silane coupling agents that are liquid at room temperature, surfactants that are liquid at room temperature, and high-boiling compounds that are liquid at room temperature.
  • polyethylene glycols that are liquid at room temperature examples include polyethylene glycols with an average molecular weight of 600 or less.
  • the melting point of polyethylene glycol (PEG600) with an average molecular weight of 600 is between 17°C and 22°C, so PEG600 is liquid at room temperature (25°C).
  • PEG600 polyethylene glycol having an average molecular weight of 600 or less is water-soluble.
  • An acrylic copolymer that is liquid at room temperature has, for example, at least a carboxyl group as a hydrophilic group, and at least a constitutional unit of an alkyl (meth)acrylate monomer and a constitutional unit of a carboxyl group-containing (meth)acrylic monomer in the molecule.
  • the mass average molecular weight of such an acrylic copolymer is, for example, 10,000 or less (for example, about 2,000), and the acid value is about 70 [mgKOH/g].
  • Examples of products containing such an acrylic copolymer include the product name "ARUFON 3510" (manufactured by Toagosei Co., Ltd.). Note that such an acrylic copolymer is water-soluble.
  • the acrylic copolymer which is liquid at room temperature is, for example, an acrylic water-soluble graft polymer having a hydrophilic group (polyoxyethylene chain) in the side chain.
  • the weight average molecular weight of such an acrylic copolymer is, for example, about 70,000, and the glass transition point Tg is about -40°C.
  • Examples of products containing such acrylic copolymers include the product name "Marproof HP Series" (manufactured by NOF Corporation).
  • An ether-containing compound that is liquid at room temperature has a polar part and a nonpolar part in its molecule.
  • Examples of products containing such ether-containing compounds include the product name "Sofval P Series" (manufactured by NOF Corporation).
  • Polyoxyethylene polyoxypropylene glycol which is liquid at room temperature, is a block copolymer that has a polyoxyethylene structure and a polyoxypropylene structure in its molecule.
  • Examples of products containing polyoxyethylene polyoxypropylene glycol that are liquid at room temperature include the product name "Epan Series" (manufactured by Dai-ichi Kogyo Seiyaku Co., Ltd.).
  • a polycationic polymer that is liquid at room temperature is obtained, for example, by polymerizing at least an allylic amine (diallylamine), and therefore has an amine-containing cyclic structure in its side chain portion.
  • the amine in the side chain moiety may be, for example, a secondary amine, a tertiary amine, or a quaternary ammonium salt.
  • the polycationic polymer may have, for example, a sulfonic acid group in the main chain. Examples of products containing such polycationic polymers include the product name "PAS series" (manufactured by Nittobo Medical Co., Ltd.).
  • a polycationic polymer that is liquid at room temperature is represented by the following general formula (1), for example.
  • x is a secondary amine, a tertiary amine, or a quaternary ammonium salt.
  • m may be 0.
  • n is an integer greater than or equal to 1, and may be less than or equal to 1000, for example.
  • hydrophilic group-containing monomer examples include (meth)acrylic type monomers having a (meth)acrylic acid structure or (meth)acrylate structure in the molecule. Such (meth)acrylic monomers contain a carboxy group or an ester bond (ester group) as a hydrophilic group in the molecule.
  • This type of (meth)acrylic monomer is commercially available (eg, "Light Ester” series, “Light Acrylate” series, manufactured by Kyoeisha Chemical Co., Ltd.).
  • a silane coupling agent that is liquid at room temperature has an alkoxysilane structure as a hydrophilic group in its molecule.
  • the silane coupling agent include those containing a vinyl group, an epoxy group, a styryl group, a (meth)acrylic group, an amino group, an isocyanate group, or an acid anhydride in the molecule.
  • the above-mentioned silane coupling agents include trialkoxysilane type, methyldialkoxysilane type, and the like.
  • the alkoxy group may be a methoxy group or an ethoxy group.
  • products such as "KBM series" manufactured by Shin-Etsu Chemical Co., Ltd.
  • a surfactant that is liquid at room temperature contains an anionic hydrophilic group, a cationic hydrophilic group, or a nonionic hydrophilic group (such as a polyoxyethylene chain) as a hydrophilic group in its molecule.
  • the hydrophilic group may be an acrylonitrile group, an ester bond, or the like.
  • the liquid surfactant is, for example, an alkyltrimethyl or alkyldimethylbenzyl quaternary ammonium salt type cationic surfactant.
  • the alkyl moiety is, for example, lauryl, palmityl, stearyl or behenyl.
  • Such liquid surfactants are included in, for example, the product name "Nissan Cation” series (manufactured by NOF Corporation).
  • the liquid surfactant is, for example, an acetate of an aliphatic amine (laurylamine or stearylamine).
  • Such surfactants are included in, for example, the product name "Nissan Cation” series (manufactured by NOF Corporation).
  • the liquid surfactant is, for example, polyoxyethylene lauryl ether sulfate sodium salt.
  • Such surfactants are included in, for example, the product name "Trax” series (manufactured by NOF Corporation).
  • the liquid surfactant is, for example, fatty acid amide ether sulfate sodium salt.
  • Such surfactants are included in, for example, the product name "Sanamide” series (manufactured by NOF Corporation).
  • the liquid surfactant is, for example, sodium fatty acid methyltaurate.
  • Such surfactants are included in, for example, the product name "Diapon” series (manufactured by NOF Corporation).
  • the liquid surfactant is, for example, polyoxyalkylene alkyl ether such as polyoxyethylene branched alkyl ether.
  • Such surfactants are included in, for example, the product name "Dispanol” series (manufactured by NOF Corporation).
  • the liquid surfactant is, for example, an aminoacetic acid betaine type amphoteric surfactant such as aliphatic alkyldimethyl-aminoacetic acid betaine or fatty acid-amidopropyldimethyl-aminoacetic acid betaine.
  • Such surfactants are included in, for example, the product name "Nissan Anon” series (manufactured by NOF Corporation).
  • the liquid surfactant is, for example, polyoxyethylene alkylamine. Such surfactants are included in, for example, the product name "Nimeen” series (manufactured by NOF Corporation).
  • the high-boiling compound that is liquid at room temperature is, for example, an organic compound having a boiling point of 100° C. or higher. Note that the boiling point of such a compound may be less than 250°C.
  • the molecular weight of the high-boiling compound that is liquid at room temperature is, for example, 200 or less, preferably 150 or less.
  • Preferred high-boiling compounds that are liquid at room temperature include diethylene glycol,
  • the above liquid component is preferably water-soluble.
  • a compound is considered water-soluble if it has a solubility of 1 g or more in 100 g of water at 25°C. Since the liquid component is water-soluble, the protective layer 11 can be more easily removed with a liquid containing water.
  • the above liquid component is preferably a hardly volatile compound regardless of its molecular structure.
  • a compound having a vapor pressure of 2.5 hPa or less at 20° C. is considered to be poorly volatile.
  • the above-mentioned protective layer 11 only needs to have hydrophilicity of a predetermined level or higher when removed by a liquid containing water.
  • the above-mentioned protective layer 11 has hydrophilicity higher than a predetermined value, at least a portion of the above-mentioned protective layer 11 is usually dissolved in a liquid containing water.
  • the water absorption rate of the protective layer 11 is preferably 2.0% by mass or more when removed by a liquid containing water. This makes the protective layer 11 more easily soluble in liquids containing water.
  • the water absorption rate can be increased, for example, by increasing the content of hydrophilic groups in the hydrophilic polymer or by increasing the content of liquid components in the protective layer 11.
  • the water absorption rate of the protective layer 11 may be, for example, 10.0% by mass or less.
  • the water absorption rate of the above-mentioned protective layer 11 is determined from a measured value using coulometric titration of Karl Fischer method. Specifically, a test sample that has reached a steady state in an environment with a temperature of 23° C. and a humidity of 50 RH% is heated at 150° C. for 3 minutes using a moisture vaporizer, and the vaporized moisture is measured. The water absorption rate is determined from the ratio of the measured water content to the mass of the test sample after heating.
  • the amount of the liquid component relative to 100 parts by mass of the hydrophilic polymer is preferably 1 part by mass or more, more preferably 2 parts by mass or more.
  • the protective layer 11 has better workability in that microcracks are less likely to occur when subjected to shear force during cutting, and it can adhere more fully to the object to be protected.
  • the amount of the above-mentioned liquid component with respect to 100 parts by mass of the above-mentioned hydrophilic polymer may be 60 parts by mass or less, and may be 40 parts by mass or less. Since the protective layer 11 does not contain an excessive liquid component, the moldability when manufacturing the protective layer 11 becomes better.
  • the adhesion of the protective layer 11 to the object to be protected is indicated by, for example, the peeling force when peeling the protective layer 11 from a silicon bare wafer as a substrate.
  • the peeling force of the protective layer 11 may be 100 [N/100 mm] or less, or may be 80 [N/100 mm] or less. Note that the above peeling force may be 0.2 [N/100 mm] or more.
  • the above peeling force is measured under the following measurement conditions.
  • a measurement sample is prepared as follows. First, a backing tape is attached to the surface of the protective layer 11 opposite to the above-mentioned one surface at 25.degree. C. using a hand roller. Next, the measurement sample is processed to have a width of 100 mm, and a bare wafer is bonded to the above-mentioned one surface of the protective layer 11. The bonding is carried out at 90° C. and 10 mm/sec.
  • the protective layer 11 is peeled off from the bare wafer together with the backing tape at a peeling angle of 180° and a peeling speed of 300 mm/min, and the peeling force is measured.
  • a measuring device for example, "Autograph (manufactured by SHIMADZU)" can be used.
  • the storage modulus E' at 70° C. of the protective layer may be 0.1 GPa or less (100 MPa or less).
  • the protective layer 11 can have better followability when subjected to deformation force.
  • the wettability to the interface of the object to be protected becomes better, the adhesion to the object to be protected can be improved.
  • the storage elastic modulus E' at 70° C. of the protective layer 11 may be 0.01 GPa or more (10 MPa or more).
  • the temperature at which the loss modulus E'' reaches its maximum value may be 35° C. or lower. It is possible to bond the material to the target object in sufficient adhesion. The temperature at which the loss modulus E'' reaches its maximum value may be 5° C. or higher.
  • the peak temperature of Tan ⁇ (E''/E'), which is the ratio of the loss modulus E'' to the storage modulus E', is preferably less than 70°C. .
  • the protective layer 11 receives deformation force, it can have better followability.
  • the wettability to the interface of the object to be protected becomes better, the adhesion to the object to be protected can be improved.
  • the protective layer 11 can be brought into close contact with the object to be protected at a relatively low temperature, the protection process described below can be performed at a relatively low temperature, which further reduces the thermal energy cost for heating required in the protection process. I can do it.
  • the peak temperature of Tan ⁇ (E"/E') may be 25° C. or higher, or may be 30° C. or higher. As the peak temperature becomes higher, handling of the protective layer 11 becomes difficult. It can be easier.
  • the dynamic viscoelasticity measurement of the protective layer 11 is carried out in tensile mode under the following test conditions using a solid viscoelasticity measuring device.
  • Test sample thickness 50 ⁇ m
  • Test sample width 10mm
  • Distance between chucks 20mm
  • Heating rate 10°C/min
  • Test temperature 0°C ⁇ 120°C
  • Frequency 1Hz
  • the above protective sheet 1 can be manufactured by a common method.
  • the protective layer 11 is prepared by mixing the above-mentioned hydrophilic polymer, liquid component, solvent, etc. by a general method, applying the mixture to the release liner 15, and then evaporating the solvent from the mixture. Good too.
  • the above-mentioned protective sheet 1 is used, for example, by peeling off the release liner 15 from the protective layer 11 and pasting the protective layer 11 on the protected surface of the object to be protected.
  • the protective layer 11 protecting the protected surface is then removed from the protected surface using a liquid containing water.
  • the protective sheet 1 of this embodiment a method for using the protective sheet 1 of this embodiment will be explained. Specifically, a method for manufacturing an electronic component device using the above protective sheet 1 will be described as an example.
  • the object to be protected is a substrate that is a member constituting an electronic component device.
  • the electronic component device manufactured using the above protective sheet 1 may be, for example, a semiconductor device such as a semiconductor integrated circuit including a semiconductor chip, or a device including a system LSI having a complementary MOS (CMOS).
  • CMOS complementary MOS
  • Micro Electro Mechanical Systems (MEMS) are devices in which mechanical components, sensors, actuators, or electronic circuits are integrated on a single silicon substrate, glass substrate, or organic material substrate using microfabrication technology.
  • the device may be equipped with the following.
  • the electronic component device to be manufactured may be a device including a wiring board.
  • the protected surface Sa which is one surface of the substrate S, is protected by the protective layer 11.
  • circuit components may or may not be arranged on the protected surface Sa.
  • the protected surface Sa of the substrate S may be, for example, a circuit surface on which a circuit is formed, or a non-circuit surface on which a circuit is not formed.
  • the protective layer 11 may be formed on the protected surface Sa of the substrate S.
  • it may be formed by applying a mixture of the above-mentioned hydrophilic polymer, liquid component, solvent, etc. to the protected surface Sa of the substrate S, and then volatilizing the solvent. Since the formed protective layer 11 contains the above-described hydrophilic polymer and liquid component, it has good adhesion to the protected surface Sa of the substrate S.
  • the material of the substrate S is not particularly limited as long as it is plate-shaped.
  • the substrate include a semiconductor wafer, a substrate constituting a sensor system wafer such as CMOS or MEMS, a pseudo wafer, or a wiring board.
  • a method for manufacturing an electronic component device using the above protective sheet 1 is as follows: A step of protecting one protected surface of the substrate by overlaying the protective layer 11 of the above-mentioned protective sheet 1 on the protected surface (protection step); The method includes a step of removing the protective layer 11 overlapping the protected surface by bringing it into contact with a liquid containing water (removal step). The details of the protective layer 11 are as described above.
  • a step (wetting step) of increasing the humidity of the gas in contact with the protected surface Sa of the substrate S may be carried out before the protection step, if necessary (see FIG. 2A). .
  • the wetting step can be performed, for example, by bringing a gas containing water vapor into contact with the surface to be protected, by spraying water in a mist onto the surface to be protected, by applying water to the surface to be protected, or the like.
  • the protective layer 11 of the protective sheet 1 is superimposed on the protected surface Sa of the substrate S.
  • the protective layer 11 is overlaid on the surface of the substrate S on which at least one of the circuit wiring, the sensor section, and the electrode section is arranged as a circuit component.
  • the circuit components include circuit wiring, electrode parts, transistors, diodes, and elements such as sensor parts (light receiving sensors, vibration sensors, etc.).
  • a step (for example, a dicing step) may be performed to produce a plurality of pieces of a laminate in which the chip S' in which the substrate is cut into pieces and the small pieces 11' of the protective layer are overlapped.
  • the protective layer 11 overlapping the protected surface of the substrate S is removed using a liquid containing water.
  • the entire protective layer 11 may be dissolved in the water-containing liquid, or a part of the protective layer 11 may be dissolved.
  • a semiconductor device for example, a semiconductor chip X is cut out from a semiconductor wafer W on which a circuit surface is formed, and a semiconductor device having the cut out semiconductor chip X is assembled.
  • a semiconductor device is manufactured using at least the protective layer 11 of the protective sheet 1 and the dicing tape 20 (see FIG. 3A).
  • the dicing tape 20 has a base material layer 21 and an adhesive layer 22. These sheets and tapes are used as auxiliary tools for manufacturing semiconductor devices. Note that it is also possible to use a dicing die bond film 50 in which the die bond sheet 30 overlaps the adhesive layer 22 of the dicing tape 20 (see FIG. 3B). Commercially available products can be used as the dicing tape 20 and the dicing die bond film 50, respectively.
  • a method for manufacturing a semiconductor device includes a pre-process of forming a circuit surface on one side of a bare wafer using a highly integrated electronic circuit, and then cutting out semiconductor chips X from the semiconductor wafer W on which the circuit surface has been formed and assembling them. and a post-process.
  • a wafer (semiconductor wafer W) serving as a substrate on which a circuit surface is formed is cut into small semiconductor chips X (dies). Thereafter, a semiconductor integrated circuit (semiconductor device) is assembled by bonding the semiconductor chip X, which has become a small piece, to an adherend.
  • the method for manufacturing a semiconductor device of the first example includes an assembly step of cutting out a semiconductor chip X from a semiconductor wafer W (substrate) on which a circuit surface is formed and assembling a semiconductor device having the semiconductor chip X.
  • a protective layer 11 for protecting the circuit components is superimposed on at least one surface of the semiconductor wafer W, on which any of the circuit components is formed, and the circuit surface ( a protection step to protect the surface to be protected); a mounting step of fixing the semiconductor wafer W to the dicing die bond film 50 by pasting the semiconductor wafer W with circuit components formed on one side to the dicing die bond film 50 (the die bond sheet 30 overlapping the dicing tape 20); a peeling step of removing the release liner 15 by peeling between the protective layer 11 and the release liner 15, which is performed as necessary; By cutting the laminate of the semiconductor wafer W, the protective layer 11, and the die-bonding sheet 30 into small pieces so as to leave intervals in the surface direction, the semiconductor wafer W is cut into small pieces, the semiconductor chip X, the small pieces 11' of the protective layer, and the die-bonding sheet 30.
  • the above-described protective layer 11 and dicing die bond film 50 having the dicing tape 20 are used as manufacturing aids.
  • a blade dicing process is performed as a process of producing a plurality of small pieces of the laminate.
  • the die bond sheet 30, the semiconductor wafer W, and the protective layer 11 are diced into small pieces using a dicing blade T or the like, and semiconductor chips X (die) are made by cutting the semiconductor wafer W into small pieces.
  • the semiconductor wafer W is configured so that a plurality of semiconductor chips X can be obtained. Specifically, the semiconductor wafer W is divided into small pieces at intervals in a plurality of directions along the surface (for example, directions along the surface and perpendicular to each other), thereby forming a plurality of semiconductor chips X. It is configured so that it can be created. Further, the semiconductor wafer W has a circuit surface on one surface on which at least one type of circuit component is arranged.
  • the shape of the semiconductor chip when viewed from one side in the thickness direction is, for example, a rectangular shape, and the length of one side is, for example, a predetermined length of 5 mm or more and 20 mm or less.
  • a protection layer 11 is overlaid on the circuit surface of the semiconductor wafer W.
  • the circuit surface can be protected by the protective layer 11 until the protective layer 11 is removed. Therefore, it is possible to prevent dust and the like from adhering to the circuit surface of the semiconductor wafer W covered with the protective layer 11.
  • the protection process and the mounting process can be performed simultaneously as follows.
  • the dicing ring R may be attached to the adhesive layer 22 of the dicing tape 20, and then the dicing ring R may be fixed to the holder H of the expanding device. Thereafter, as shown in FIG. 4A, the semiconductor wafer W, the protective layer 11, and the release liner 15 are attached at once to the die bonding sheet 30 overlapping the dicing tape 20. For example, the semiconductor wafer W is fixed to the die bond sheet 30 in this manner. Then, by pressing the protective layer 11 onto the semiconductor wafer W via the release liner 15, the protective layer 11 is attached to the circuit surface.
  • a peeling step may be performed in which the release liner 15 is removed by peeling it from the protective layer 11.
  • the semiconductor wafer W is diced, for example, as shown in FIGS. 4B and 4C. Specifically, the protective layer 11 and the semiconductor wafer W are cut together with the die-bonding sheet 30 into a predetermined size to form a semiconductor chip X with a small piece 30' of the die-bonding sheet. At this time, small pieces 11' of the protective layer are also formed.
  • the blade dicing process is performed using, for example, a dicing blade T according to a conventional method. In the blade dicing process, for example, a cutting method called a full cut in which cuts are made up to the die bond sheet 30 can be adopted.
  • the dicing device used in the blade dicing process is not particularly limited, and conventionally known devices can be used. In the blade dicing process, foreign matter such as debris may be generated as the semiconductor wafer W is cut. At this time, since the protected surface of the semiconductor wafer W is protected by the protective layer 11, it is possible to prevent foreign matter from adhering to the protected surface.
  • the semiconductor chip Each small piece 11' of the protective layer is removed from the surface (surface to be protected).
  • the small pieces 11' of the protective layer By removing the small pieces 11' of the protective layer in this way, all of the plurality of small pieces 11' of the protective layer can be removed relatively easily, and the number of foreign substances attached to the surface of the semiconductor chip can be reduced by using the above-mentioned liquid. It can be reduced relatively easily. Further, the surface of each semiconductor chip X (surface to be protected) on which the small pieces 11' of the protective layer overlap can be cleaned with liquid.
  • the small pieces 11' of the protective layer may be removed by dissolving all of the pieces of the protective layer (the plurality of small pieces 11' of the protective layer) in the liquid. On the other hand, a part of the constituent components of the small pieces 11' of the protective layer are dissolved in the liquid, and each small piece 11' whose adhesion to the semiconductor chip X is weakened is peeled off from the semiconductor chip X. The small piece 11' may be removed.
  • the liquid containing water is not particularly limited as long as it is a liquid substance containing water.
  • a liquid may contain water in an amount of 30% by mass or more, 50% by mass or more, 70% by mass or more, 80% by mass or more, or 90% by mass or more.
  • the liquid may also contain components that dissolve in water. Examples of such components include water-soluble organic solvents. Examples of such water-soluble organic solvents include monohydric alcohols having 4 or less carbon atoms, such as methanol, ethanol, propanols such as isopropyl alcohol, or butanols such as t-butanol.
  • the small piece 11' of the protective layer may be immersed in the liquid being stirred to bring the small piece 11' of the protective layer into contact with the liquid.
  • a liquid sprayed from a nozzle or the like may be brought into contact with the small piece 11' of the protective layer.
  • the temperature of the liquid is not particularly limited, and may be set, for example, to 10°C or more and 90°C or less.
  • the liquid is injected toward the semiconductor chips X attached to each of the small pieces 30' of the die-bonding sheet while rotating the disc-shaped stage that supports the dicing tape 20 from below in the circumferential direction.
  • the plurality of small pieces 11' of the protective layer overlapping the semiconductor chip X can be removed.
  • the protective layer 11 is overlaid on the surface (circuit surface) on which circuit components are formed on the semiconductor wafer W, so that the circuit surface is protected until the protective layer 11 is removed. can.
  • the small piece 30' of the die-bonding sheet with the semiconductor chip X attached thereto is peeled off from the adhesive layer 22 of the dicing tape 20.
  • the pin member P is raised to push up the semiconductor chip X to be picked up through the dicing tape 20.
  • the pushed-up semiconductor chip X and small piece 30' of the die bond sheet are held by a suction jig J.
  • the small piece 30' of the die bonding sheet stuck to the semiconductor chip X needs to be easily peeled off from the adhesive layer 22 of the dicing tape 20.
  • the above-described dicing tape 20 is designed to exhibit such performance well.
  • the dicing tape 20 is configured such that the adhesive layer 22 is cured by being irradiated with active energy rays (for example, ultraviolet rays), and the adhesive force of the adhesive layer 22 is reduced. By curing the adhesive layer 22 after irradiation, the adhesive force of the adhesive layer 22 can be lowered, so that the semiconductor chip X and the small piece 30' of the die bond sheet can be relatively easily peeled off from the adhesive layer 22 after irradiation be able to.
  • Dicing tape 20 having such a configuration is commercially available.
  • the semiconductor chip X to which the small piece 30' of the die-bonding sheet is attached is bonded to the adherend Z.
  • the semiconductor chip X is bonded to an adherend such as the substrate or the semiconductor chip X via the small piece 30' of the die-bonding sheet.
  • a plurality of semiconductor chips X to which small pieces 30' of the die bond sheet are attached may be stacked.
  • the adherend Z include an interposer, a printed circuit board, or a small piece of a board (in the case of stacking small pieces of a board).
  • a resin sealing process may be performed in which the semiconductor chip X is sealed (covered) with a thermosetting resin or the like.
  • the second example of the method for manufacturing a semiconductor device is mainly based on the first method in that the semiconductor wafer W is cut into small pieces through a so-called DBG process in which the thickness of the semiconductor wafer W is reduced after half-cutting the semiconductor wafer W. Different from the example.
  • the semiconductor wafer W in order to process the semiconductor wafer W into chips (dies) by cutting the semiconductor wafer W, grooves are formed in the semiconductor wafer W, and the semiconductor wafer W is further ground to reduce its thickness.
  • the second example of the semiconductor device manufacturing method includes, for example, a half-cut processing step of forming grooves on the circuit surface of the semiconductor wafer W for cutting the semiconductor wafer W into small pieces to produce a plurality of semiconductor chips X; a back grinding step of reducing the thickness of the semiconductor wafer W by performing a grinding process on the surface of the semiconductor wafer W opposite to the circuit surface; a mounting step of attaching the thinned semiconductor wafer W to the die bond sheet 30 on the dicing tape 20 and fixing the semiconductor wafer W to the die bond sheet 30; an expanding step of cutting the semiconductor wafer W, die bond sheet 30, and protective layer 11 into small pieces by stretching the dicing tape 20; a removal step of removing the plurality of small pieces 11' of the protective layer stuck to the semiconductor chip X; a pickup step of peeling off the semiconductor chip X and the small piece 30' of the die-bonding sheet to take out the semiconductor chip X; The method includes a bonding step of bonding the extracted semiconductor chip X to an adherend via
  • dividing grooves for dividing the semiconductor wafer W into small pieces are formed.
  • the groove is formed in the semiconductor wafer W so as not to penetrate in the thickness direction.
  • a backgrind tape B is superimposed on the circuit surface of the semiconductor wafer W in which the grooves are formed, and the surface to be protected (circuit surface) is protected with the backgrind tape B.
  • the surface of the semiconductor wafer W on which the circuit components are not arranged is subjected to a grinding process.
  • the semiconductor wafer W is subjected to a grinding process (backgrinding process) using a grinding pad until it reaches a predetermined thickness. The thickness of the semiconductor wafer W is reduced to a predetermined thickness by the grinding process.
  • the surface of the semiconductor wafer W that has been subjected to the grinding process (the surface on which the circuit components are not arranged) is attached to the die bond sheet 30 on the dicing tape 20, and a mounting process is performed (see FIG. 5C).
  • an expanding process is performed to cut the semiconductor wafer W and the protective layer 11 into small pieces.
  • the expanding process as shown in FIG. 5D, with the semiconductor wafer W attached to the die bond sheet 30 on the dicing tape 20, the dicing tape 20 is stretched in the surface direction so as to increase the surface area of the dicing tape 20.
  • the laminate of the protective layer 11, the semiconductor wafer W, and the die-bonding sheet 30 is divided into small pieces, and the interval between adjacent semiconductor chips X formed in the small pieces is widened along the surface direction.
  • the dicing tape 20 is stretched so as to be spread in the surface direction by pushing up the pushing up member U included in the expanding device from below the dicing tape 20 .
  • the semiconductor wafer W, the die bond sheet 30, and the protective layer 11 are cut into small pieces under specific temperature conditions.
  • the above temperature condition is, for example, ⁇ 20° C. or higher and 0° C. or lower.
  • the push-up member U By lowering the push-up member U, the expanded state is released (this is the low-temperature expansion process).
  • the protective layer 11 and the die-bonding sheet 30 need to be cut into small pieces.
  • the above-mentioned protective layer 11 and die-bonding sheet 30 are each designed to be cut well at this time.
  • the dicing tape 20 may be stretched again under higher temperature conditions (eg, 10° C. or higher and 25° C. or lower) so as to increase the surface area of the dicing tape 20.
  • the adjacent semiconductor chips X can be separated in the surface direction of the dicing tape 20, and the kerf (space) can be further widened (room temperature expansion step).
  • the small piece 11' of the protective layer stuck to the semiconductor chip X can be removed by a method similar to the method described above. Furthermore, a pick-up process for taking out the semiconductor chip X, a bonding process for bonding the semiconductor chip X to an adherend, and the like can be carried out using a method similar to the method described above.
  • steps not specifically mentioned can be performed in the same manner as each step in the first example.
  • a protective layer 11 is formed between the back grind tape B and the semiconductor wafer W. may be placed. Since grinding (back grinding) can be performed even in such a state, the semiconductor wafer W can be thinned to a desired thickness as shown in FIG. 5F. Thereafter, as shown in FIG. 5G, a mounting process can be performed with the backgrind tape B, protective layer 11, and semiconductor wafer W stacked.
  • “Third example of semiconductor device manufacturing method” The method for manufacturing a semiconductor device of the third example is mainly similar to the first example in that a weak portion is formed inside the semiconductor wafer W, and the semiconductor wafer W is divided into small pieces of semiconductor chips X using the weak portion as a boundary. Or different from the second example.
  • the third example of the method for manufacturing a semiconductor device includes, for example, a mounting step of fixing the semiconductor wafer W to the dicing tape 20 by pasting the semiconductor wafer W on both sides with circuit components formed thereon; a protection step of protecting the circuit surface by attaching a protective layer 11 to the exposed circuit surface of the semiconductor wafer W; a stealth processing step in which the semiconductor wafer W is prepared to be cut into small pieces into semiconductor chips X (die) by forming a fragile part with a laser beam inside the semiconductor wafer W to which the protective layer 11 is attached; an expanding step of cutting both the semiconductor wafer W and the protective layer 11 into small pieces by stretching the dicing tape 20; a removal step of removing the plurality of small pieces 11' of the protective layer stuck to the semiconductor chip X; a pickup step of peeling off between the semiconductor chip X and the adhesive layer 22 to take out the semiconductor chip X; and a bonding step of bonding the extracted semiconductor chip X to an adherend.
  • the die bond sheet 30 is not placed on the dicing tape 20, and the semiconductor wafer W is superimposed on the adhesive layer 22 of the dicing tape 20 (see FIG. 6A).
  • the stealth processing step fragile parts for cutting the semiconductor wafer W into small pieces into semiconductor chips X are formed inside the semiconductor wafer W.
  • a fragile region is formed inside the semiconductor wafer W (see FIGS. 6A and 6B).
  • the laser beam L is irradiated onto the semiconductor wafer W from the dicing tape side.
  • the stealth processing step can be performed using, for example, a commercially available stealth dicing device. Note that before the mounting process, the semiconductor wafer W may be irradiated with a laser beam to form a fragile portion inside the wafer.
  • the protective layer 11 is divided into small pieces together with the semiconductor wafer W.
  • the semiconductor wafer W can be divided into small pieces of semiconductor chips X using the above-mentioned fragile portion inside the semiconductor wafer as a boundary.
  • the semiconductor wafer W is divided into small pieces into the semiconductor chips X, and the protective layer 11 is also divided into small pieces.
  • the removal process of the third example can be performed in the same manner as the removal process of the first example, as shown in FIG. 6D.
  • the semiconductor chip X is peeled off from the adhesive layer 22 of the dicing tape 20.
  • the semiconductor chip X is peeled off from the adhesive layer 22 of the dicing tape 20.
  • the joining process can be performed in the same manner as in the first or second example.
  • steps not specifically mentioned can be performed in the same manner as each step in the first or second example.
  • the semiconductor wafer W may be ground using the back grinding tape B.
  • a protective layer 11 may be placed between the back grinding tape B and the semiconductor wafer W, as shown in FIG. 6E. Since the grinding process (back grinding process) can be performed even in such a state, the semiconductor wafer W can be thinned to a desired thickness as shown in FIG. 6F. Thereafter, as shown in FIG. 6G, a mounting process can be performed with the backgrind tape B, protective layer 11, and semiconductor wafer W stacked on top of each other.
  • the protective sheet of the present invention and the method of manufacturing an electronic component device using the protective sheet are as exemplified above, the present invention is not limited to the protective sheet or the manufacturing method exemplified above. That is, various forms used in general methods of manufacturing electronic component devices can be adopted within the range that does not impair the effects of the present invention.
  • Matters disclosed by this specification include the following. (1) comprising a protective layer that is removed by a liquid containing water after protecting at least a portion of the surface of the object to be protected;
  • the protective layer is a protective sheet containing a solid hydrophilic polymer and a liquid compound containing a hydrophilic group in its molecule.
  • the hydrophilic polymer has a plurality of hydrophilic groups in the molecule, and the hydrophilic groups are selected from the group consisting of a hydroxy group, a carboxy group, a sulfonic acid group, a pyrrolidone group, an amine-containing group, and a polyoxyethylene group.
  • the protective sheet according to any one of (1) to (5) above, which is at least one type of protective sheet.
  • the hydrophilic polymer described in (1) to (5) above is at least one selected from the group consisting of polyvinyl alcohol, polyvinylpyrrolidone, water-soluble polyester polymer, polyethylene oxide, polyacrylic acid, and polyvinylacetamide.
  • the liquid compound has a hydrophilic group in the molecule, and the hydrophilic group is at least one selected from the group consisting of a hydroxy group, a carboxy group, a sulfonic acid group, a pyrrolidone group, an amine-containing group, and a polyoxyethylene group.
  • the protective sheet according to any one of (1) to (7) above, which is one type.
  • Example 1 to 4 Comparative Examples 1 and 2, Reference Example 1
  • Protective sheets of each Example, each Comparative Example, and Reference Example 1 were produced in the following manner. Specifically, the following raw materials were prepared as the hydrophilic polymer and liquid component, respectively. After dispersing the hydrophilic polymer and the liquid component in water, they were heated to 90° C. to dissolve them, thereby preparing a PVA aqueous solution. This PVA aqueous solution was applied onto a release liner (PET film, thickness 50 ⁇ m). The release liner had a surface treated with silicone mold release, and the above PVA aqueous solution was applied onto this surface using an applicator. Furthermore, a drying process was performed at 110° C. for 2 minutes to form a protective layer with a thickness of 10 ⁇ m overlapping one surface of the release liner (film formation). Details of each raw material of the protective layer used in each Example and each Comparative Example are as shown in Table 1 and below.
  • the physical properties (dynamic viscoelasticity) of the produced protective sheet were measured as follows. In addition, the performance of the protective sheet was evaluated.
  • ⁇ Dynamic viscoelasticity measurement of protective sheet> The dynamic viscoelasticity of the protective sheet was measured using a solid viscoelasticity measuring device (RSA3 manufactured by TA Instruments) according to the measurement conditions described above.
  • the storage modulus E' at 70°C, the temperature at which the loss modulus E'' reached its maximum, and the temperature at which tan ⁇ (E''/E') reached its peak were determined.
  • the protective layer of the protective sheet of the example protected the surface to be protected and could be removed relatively easily with water.
  • the protective layer of the protective sheet of the example contains the above-mentioned liquid component in addition to the above-mentioned solid hydrophilic polymer, so it has good adhesion to the protective surface of the object to be protected, and has good processability ( The performance of suppressing the occurrence of microcracks was good.
  • the protective sheet of the present invention is suitably used, for example, for manufacturing a semiconductor device having a semiconductor integrated circuit or the like.

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  • Compositions Of Macromolecular Compounds (AREA)
  • Dicing (AREA)
  • Laminated Bodies (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010165963A (ja) * 2009-01-19 2010-07-29 Furukawa Electric Co Ltd:The 半導体ウェハの処理方法
JP2014526143A (ja) * 2011-07-01 2014-10-02 ヘンケル ユーエス アイピー エルエルシー 半導体組み立てにおける加工領域を保護するためのリペレント材料の使用
JP2016139690A (ja) * 2015-01-27 2016-08-04 碁達科技股▲ふん▼有限公司 レーザーダイシング用保護膜組成物及びその応用
WO2019111760A1 (ja) * 2017-12-07 2019-06-13 リンテック株式会社 ワーク加工用シートおよび加工済みワークの製造方法
JP2020188153A (ja) * 2019-05-15 2020-11-19 パナソニックＩｐマネジメント株式会社 樹脂組成物、樹脂被覆基板および素子チップの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013131694A (ja) 2011-12-22 2013-07-04 Lintec Corp チップ用樹脂膜形成用シートおよび半導体チップの製造方法
JP6306679B2 (ja) 2012-07-31 2018-04-04 日東電工株式会社 放射線硬化型粘着剤、放射線硬化型粘着剤層、放射線硬化型粘着シートおよび積層体
JP6857477B2 (ja) 2016-09-30 2021-04-14 日東電工株式会社 有機ｅｌ表示装置
JP2021161735A (ja) 2020-03-31 2021-10-11 ナガセケムテックス株式会社 仮固定シート、加工方法、被膜形成方法及び電子部品の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010165963A (ja) * 2009-01-19 2010-07-29 Furukawa Electric Co Ltd:The 半導体ウェハの処理方法
JP2014526143A (ja) * 2011-07-01 2014-10-02 ヘンケル ユーエス アイピー エルエルシー 半導体組み立てにおける加工領域を保護するためのリペレント材料の使用
JP2016139690A (ja) * 2015-01-27 2016-08-04 碁達科技股▲ふん▼有限公司 レーザーダイシング用保護膜組成物及びその応用
WO2019111760A1 (ja) * 2017-12-07 2019-06-13 リンテック株式会社 ワーク加工用シートおよび加工済みワークの製造方法
JP2020188153A (ja) * 2019-05-15 2020-11-19 パナソニックＩｐマネジメント株式会社 樹脂組成物、樹脂被覆基板および素子チップの製造方法

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