WO2024004318A1 - 配線電極付き基板の製造方法 - Google Patents

配線電極付き基板の製造方法 Download PDF

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Publication number
WO2024004318A1
WO2024004318A1 PCT/JP2023/014494 JP2023014494W WO2024004318A1 WO 2024004318 A1 WO2024004318 A1 WO 2024004318A1 JP 2023014494 W JP2023014494 W JP 2023014494W WO 2024004318 A1 WO2024004318 A1 WO 2024004318A1
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WIPO (PCT)
Prior art keywords
wiring electrode
electrode pattern
light
substrate
opaque
Prior art date
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Ceased
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PCT/JP2023/014494
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English (en)
French (fr)
Japanese (ja)
Inventor
龍太郎 池田
晧平 高瀬
英樹 木ノ下
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Toray Industries Inc
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Toray Industries Inc
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Priority to JP2023521830A priority Critical patent/JPWO2024004318A1/ja
Priority to CN202380033942.7A priority patent/CN119173814A/zh
Publication of WO2024004318A1 publication Critical patent/WO2024004318A1/ja
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits

Definitions

  • the present invention relates to a method for manufacturing a substrate with wiring electrodes having an opaque wiring electrode pattern and a light shielding pattern on at least one side of a transparent substrate.
  • Touch panels which have been widely used as input means in recent years, are composed of a display section such as a liquid crystal panel, and a touch panel sensor that detects information input at a specific position.
  • Transparent wiring electrodes were generally used as the wiring electrodes used in touch panel sensors in order to make the wiring electrodes difficult to see, but in recent years, with higher sensitivity and larger screens, metallic materials have been used.
  • Opaque wiring electrodes are becoming widespread. Opaque wiring electrodes using metal materials have the problem of being visually recognized due to metallic luster.
  • a step of forming an opaque wiring electrode on at least one side of a transparent substrate there are a step of forming an opaque wiring electrode on at least one side of a transparent substrate, a step of applying a positive photosensitive light-shielding composition on one side of the transparent substrate, and a step of applying the opaque wiring electrode to one side of the transparent substrate.
  • a method for manufacturing a substrate with a wiring electrode has been proposed, which includes a step of forming a light-shielding layer in a region corresponding to the opaque wiring electrode by exposing and developing the positive photosensitive composition using the wiring electrode as a mask. (For example, see Patent Document 1).
  • Patent Document 1 By the manufacturing method described in Patent Document 1, it is possible to obtain a substrate with wiring electrodes that has a fine pattern, has excellent conductivity, and makes opaque wiring electrodes and wiring electrodes difficult to see.
  • a positive type photosensitive light shielding composition is applied onto an opaque wiring electrode in forming a light shielding layer, a positive type photosensitive light shielding composition layer is formed even in areas where there is no opaque wiring electrode due to leveling. Therefore, the thickness of the portion removed by the photolithography process becomes larger than the thickness of the light shielding layer formed on the opaque wiring electrode. This has caused problems in processability, such as an increase in the amount of exposure required for patterning the light-shielding layer and a longer development time. Furthermore, as the development time becomes longer, there are problems such as thinning of the developed film and peeling of the developed film, and the opaque wiring electrode becomes easily visible.
  • an object of the present invention is to provide a method for manufacturing a substrate with wiring electrodes that has excellent workability and in which the opaque wiring electrode pattern is hardly visible.
  • the present invention mainly has the following configuration. ⁇ 1> Forming an opaque wiring electrode pattern on at least one side of the transparent substrate, forming a light-shielding layer by transferring a positive photosensitive resin layer containing a light-shielding component onto the opaque wiring electrode pattern forming surface of the transparent substrate; using the opaque wiring electrode pattern as a mask, exposing and developing the light shielding layer to form a light shielding pattern in a region corresponding to the opaque wiring electrode pattern; A method for manufacturing a substrate with wiring electrodes. ⁇ 2> The method for manufacturing a substrate with wiring electrodes according to ⁇ 1>, wherein the positive photosensitive resin layer has a thickness T1 [ ⁇ m] of 0.3 to 2.0.
  • T1 and T2 are expressed by the following formula (1).
  • ⁇ 4> The method for manufacturing a substrate with wiring electrodes according to any one of ⁇ 1> to ⁇ 3>, wherein the thickness T2 [ ⁇ m] of the opaque wiring electrode pattern is 1.0 to 5.0.
  • ⁇ 5> The method for producing a substrate with wiring electrodes according to any one of ⁇ 1> to ⁇ 4>, wherein the positive photosensitive resin layer contains (b-1) an acrylic resin having a phenolic hydroxyl group and a carboxy group.
  • the positive photosensitive resin layer contains (b-2) a phenol novolak resin.
  • Mass ratio ((b- 1)/(b-2)) is 1.0 or more and 3.0 or less, the method for producing a substrate with wiring electrodes according to ⁇ 6>.
  • ⁇ 8> The method for manufacturing a substrate with wiring electrodes according to any one of ⁇ 1> to ⁇ 7>, wherein the opaque wiring electrode pattern has a line width of 1 to 10 ⁇ m.
  • the substrate with wiring electrodes has at least a thin line pattern portion, and in the thin line pattern portion, the ratio of the area where the opaque wiring electrode pattern is formed to the entire transparent substrate is 20 area % or less ⁇ 1> ⁇ ⁇ 8>.
  • ⁇ 10> The method for manufacturing a substrate with wiring electrodes according to any one of ⁇ 1> to ⁇ 9>, wherein the opaque wiring electrode pattern has a light transmittance of 15% or less at a wavelength of 365 nm.
  • ⁇ 11> The method for manufacturing a substrate with wiring electrodes according to any one of ⁇ 1> to ⁇ 10>, wherein the opaque wiring electrode pattern contains silver and/or copper.
  • the present invention it is possible to obtain a substrate with wiring electrodes with good workability in which the opaque wiring electrode pattern is hardly visible.
  • FIG. 1 is a schematic diagram showing an example of the configuration of a substrate with wiring electrodes according to the present invention.
  • FIG. 3 is a schematic diagram showing another example of the configuration of a substrate with wiring electrodes according to the present invention.
  • FIG. 1 is a schematic diagram showing a part of an example of a method for manufacturing a substrate with wiring electrodes of the present invention.
  • FIG. 2 is a schematic diagram showing an electrode pattern for evaluating visibility and conductivity used in Examples and Comparative Examples.
  • FIG. 2 is a schematic diagram of a mesh pattern of a negative-tone mask used in Examples and Comparative Examples.
  • FIG. 2 is a schematic diagram of a mesh pattern of a positive type mask used in Examples and Comparative Examples.
  • the substrate with wiring electrodes in the present invention has an opaque wiring electrode pattern on at least one side of a transparent substrate, and a light shielding pattern at a portion corresponding to the opaque wiring electrode pattern.
  • the light shielding pattern has the effect of making the opaque wiring electrode pattern less visible.
  • an overcoat layer may be provided on these, and by providing the overcoat layer, the surfaces of the opaque wiring electrode pattern and the light shielding pattern can be protected and scratches can be suppressed.
  • a light shielding pattern may be provided in a part of the region corresponding to the opaque wiring electrode pattern.
  • a substrate with wiring electrodes used in a touch panel sensor it is required to make the opaque wiring electrode pattern difficult to see in a display part such as a liquid crystal panel, so it is preferable to have a light-shielding pattern in the display part.
  • FIG. 1 shows a schematic diagram of an example of the configuration of a substrate with wiring electrodes according to the present invention.
  • An opaque wiring electrode pattern 2 is provided on a transparent substrate 1, and a light shielding pattern 3 is provided on the opaque wiring electrode pattern 2.
  • FIG. 2 shows another example of the structure of the wiring electrode-equipped substrate according to the present invention. having an opaque wiring electrode pattern 2 (first opaque wiring electrode pattern) and an insulating layer 4 on a transparent substrate 1; having an opaque wiring electrode pattern 2 (second opaque wiring electrode pattern) on the insulating layer 4; Further, a light-shielding pattern 3 is provided at a portion corresponding to the opaque wiring electrode pattern 2 (the first opaque wiring electrode pattern and the second opaque wiring electrode pattern).
  • the method for manufacturing a substrate with wiring electrodes of the present invention includes a step of forming an opaque wiring electrode pattern on at least one side of a transparent substrate (hereinafter sometimes abbreviated as "opaque wiring electrode pattern forming step”), a step of forming an opaque wiring electrode pattern on at least one side of the transparent substrate, a step of forming a light-shielding layer by transferring a positive photosensitive resin layer containing a light-shielding component onto the opaque wiring electrode pattern formation surface (hereinafter sometimes abbreviated as "light-shielding layer forming step”); A step of forming a light-shielding pattern in a region corresponding to the opaque wiring electrode pattern by exposing and developing the light-shielding layer using the opaque wiring electrode pattern as a mask (hereinafter sometimes abbreviated as "light-shielding pattern forming step”) ).
  • a light-shielding layer is formed on the surface on which the opaque wiring electrode pattern is formed in the opaque wiring electrode pattern forming process, and the light-shielding layer is exposed and developed using the opaque wiring electrode pattern as a mask, thereby shielding the area corresponding to the opaque wiring electrode pattern.
  • a pattern can be formed.
  • the positive-type photosensitive light-shielding composition when the positive-type photosensitive light-shielding composition is applied to the uneven surface on which the opaque wiring electrode pattern is formed on the transparent substrate, as described above, the positive-type photosensitive light-shielding composition
  • the material is applied not only to the convex portions but also to the concave portions by leveling, and a light-shielding layer is also formed in areas where there is no opaque wiring electrode pattern.
  • the present invention is characterized in that a positive photosensitive resin layer having shape retention properties is transferred in the light-shielding layer forming step.
  • a light-shielding layer By forming a light-shielding layer by transferring a positive photosensitive resin layer, the above problems caused by leveling can be solved, a light-shielding layer with a desired thickness can be formed with good processability, and it is opaque.
  • the wiring electrode pattern can be made less visible.
  • FIG. 3 shows a schematic diagram of a step of exposing a light-shielding layer in a light-shielding pattern forming step as part of an example of the method for manufacturing a substrate with wiring electrodes of the present invention.
  • An opaque wiring electrode pattern 2 is formed on one side of a transparent substrate 1, and a light shielding layer 5 is formed thereon by transferring a positive photosensitive resin layer containing a light shielding component.
  • the light shielding layer 5 can be exposed using the opaque wiring electrode pattern 2 as a mask.
  • an opaque wiring electrode pattern is formed on at least one side of the transparent substrate.
  • Opaque wiring electrode patterns may be formed on both sides of the transparent substrate.
  • transparent means that the light transmittance at a wavelength of 550 nm is 50% or more
  • opaque means that the light transmittance at a wavelength of 550 nm is less than 50%. Note that the light transmittance at a wavelength of 550 nm can be measured using an ultraviolet-visible spectrophotometer (U-3310, manufactured by Hitachi High-Technologies Corporation).
  • the opaque wiring electrode pattern preferably has a thin line pattern with a line width of 20 ⁇ m or less. It is more preferable to have a pad portion together with the thin line pattern.
  • the pad section refers to a section that is electrically connected to an external element, and is generally formed at a location that is not visible.
  • the opaque wiring electrode pattern has a thin line pattern at a position corresponding to a display section such as a liquid crystal panel in order to detect a touch position, and has a thin line pattern at a position corresponding to a display section such as a liquid crystal panel, and electrically connects with external elements.
  • a pad section in addition to the display section in order to connect to the display section. Further, in addition to the display section, there may be provided wiring for connecting these thin line patterns and the pad section.
  • a light-shielding pattern in the display area it is preferable to have the light-shielding pattern in a part corresponding to the thin line pattern, and the opaque wiring electrode pattern in the non-display part such as the pad part or the lead wiring. It is not necessary to have a light-shielding pattern in the region corresponding to .
  • the transparent substrate has transparency to exposure light used in the light-shielding pattern forming step described below.
  • the light transmittance at a wavelength of 365 nm is preferably 50% or more, more preferably 70% or more.
  • the positive photosensitive composition can be efficiently exposed in the light-shielding pattern forming step described below.
  • the light transmittance of the transparent substrate at a wavelength of 365 nm can be measured using an ultraviolet-visible spectrophotometer (U-3310, manufactured by Hitachi High-Technologies Corporation).
  • the transparent substrate may or may not have flexibility.
  • non-flexible transparent substrates include quartz glass substrates, soda glass substrates, alkali-free glass substrates, chemically strengthened glass substrates, "Pyrex (registered trademark)" glass substrates, synthetic quartz plates, epoxy resin substrates, and polyester glass substrates.
  • examples include an etherimide resin substrate, a polyetherketone resin substrate, a polysulfone resin substrate, and the like.
  • Examples of flexible transparent substrates include resin films such as polyethylene terephthalate film (hereinafter referred to as "PET film”), cycloolefin polymer film, polyimide film, polyester film, and aramid film, and optical resin plates. It will be done. A plurality of these may be stacked and used, for example, a plurality of transparent substrates may be bonded together using an adhesive layer. Further, the surface of these transparent substrates may have an insulating layer.
  • PET film polyethylene terephthalate film
  • the thickness of the transparent substrate is appropriately selected depending on the material within the range that can stably support the opaque wiring electrode pattern and have the above-mentioned transparency.
  • the thickness of the transparent substrate is preferably 0.3 mm or more in the case of a non-flexible transparent substrate, and in the case of a flexible transparent substrate. , preferably 25 ⁇ m or more.
  • the thickness of the transparent substrate is preferably 1.5 mm or less in the case of a transparent substrate without flexibility, and 300 ⁇ m in the case of a transparent substrate with flexibility. The following are preferred.
  • the opaque wiring electrode pattern has a light transmittance of 25% or less at a wavelength of 550 nm. Moreover, it is preferable that the opaque wiring electrode pattern has a light-shielding property against exposure light used in a light-shielding pattern forming step to be described later.
  • the light transmittance of the opaque wiring electrode pattern at a wavelength of 365 nm is preferably 15% or less. By setting the light transmittance at a wavelength of 365 nm to 15% or less, the function as a mask can be improved in the light-shielding pattern forming step described below, and a desired light-shielding pattern can be formed with better workability.
  • the light transmittance of the opaque wiring electrode pattern at a wavelength of 365 nm is more preferably 5% or less, and even more preferably 3% or less.
  • the light transmittance of the opaque wiring electrode pattern in the region where the light-shielding pattern is formed is within the above range, and among the opaque wiring electrode patterns, It is preferable that the light transmittance of the thin line pattern is within the above range.
  • the light transmittance of the opaque wiring electrode pattern can be measured using a microsurface spectrophotometer (VSS 400: manufactured by Nippon Denshoku Kogyo Co., Ltd.) for an opaque wiring electrode pattern of 0.1 mm square or more. .
  • Examples of materials constituting the opaque wiring electrode pattern include metals such as silver, gold, copper, platinum, lead, tin, nickel, aluminum, tungsten, molybdenum, chromium, titanium, and indium, as well as conductive alloys of these metals. Examples include substances. Two or more types of these may be used. Among these, silver, copper, etc. are preferred from the viewpoint of electrical conductivity.
  • conductive particles containing the aforementioned conductive substance are preferable, and the shape thereof is preferably spherical.
  • the average particle diameter of the conductive particles is preferably 0.03 ⁇ m or more from the viewpoint of improving the dispersibility of the conductive particles.
  • the average particle diameter of the conductive particles is preferably 1.0 ⁇ m or less from the viewpoint of sharpening the edges of the pattern of the opaque wiring electrode.
  • the average particle diameter of the conductive particles was determined by observing the conductive particles under magnification at a magnification of 15,000 times using a scanning electron microscope (SEM) or a transmission microscope (TEM). It can be determined by measuring the long axis length of each conductive particle and calculating the number average value.
  • the opaque wiring electrode pattern may contain an organic component in addition to the above-mentioned conductive substance.
  • the opaque wiring electrode pattern may be formed, for example, from a cured product of a photosensitive conductive composition containing conductive particles, an alkali-soluble resin, and a photopolymerization initiator; in this case, the opaque wiring electrode pattern Contains an initiator and/or its photodecomposition product.
  • the photosensitive conductive composition may contain additives such as a thermosetting agent and a leveling agent, if necessary.
  • examples of the shape of the thin line pattern include a mesh shape, a stripe shape, and the like.
  • Examples of the mesh shape include a lattice shape in which unit shapes are triangular, quadrilateral, polygonal, circular, etc., or a lattice shape consisting of a combination of these unit shapes.
  • a mesh shape is preferable from the viewpoint of making the conductivity of the pattern uniform.
  • the transparent wiring electrode patterns it is more preferable that the thin line pattern is a metal mesh made of the above-mentioned metal and having a mesh-like pattern.
  • the thickness T2 [ ⁇ m] of the opaque wiring electrode pattern is preferably 0.5 or more, more preferably 1.0 or more, and even more preferably 1.5 or more.
  • the thickness T2 [ ⁇ m] of the opaque wiring electrode pattern is preferably 10 or less, more preferably 5.0 or less, and even more preferably 3.0 or less, from the viewpoint of forming finer wiring.
  • the substrate with wiring electrodes has an overcoat layer, by setting the thickness T2 [ ⁇ m] of the opaque wiring electrode pattern to 10 or less, uneven steps on the transparent substrate can be reduced, and unevenness caused by steps when laminating the overcoat layer can be reduced. The generation of bubbles can be suppressed.
  • the thickness of the thin line pattern is preferably within the above range.
  • the thickness T2 [ ⁇ m] of the opaque wiring electrode pattern was determined by measuring the thickness at five randomly selected locations using a stylus level difference meter "Surfcom” (registered trademark) 1400 (manufactured by Tokyo Seimitsu Co., Ltd.). It can be determined by calculating the average value.
  • the line width of the pattern of the opaque wiring electrode is preferably 1 ⁇ m or more, more preferably 1.5 ⁇ m or more, and even more preferably 2 ⁇ m or more.
  • the line width of the pattern of the opaque wiring electrode is preferably 10 ⁇ m or less, more preferably 8 ⁇ m or less, from the viewpoint of making the wiring electrode more difficult to see.
  • the line width of the thin line pattern is preferably within the above range. Note that the line width of the pattern of the opaque wiring electrode can be determined by measuring five randomly selected locations using an optical microscope and calculating the average value.
  • the ratio of the area in which the opaque wiring electrode pattern is formed is preferably 20% by area or less, more preferably 15% by area or less.
  • Two or more layers of opaque wiring electrode patterns may be laminated with a transparent protective layer interposed therebetween.
  • the proportion of the area where the thin line patterns are formed can be reduced while maintaining conductivity. It can be made less visible.
  • the area in which the thin line pattern is formed can be calculated by measuring the length and width of the thin line pattern using an optical microscope.
  • the opaque wiring electrode pattern forming step includes forming a first opaque wiring electrode pattern on one side of a transparent substrate, forming an insulating layer on the first opaque wiring electrode, and forming a second opaque wiring electrode pattern on the insulating layer.
  • the method may include a step of forming an opaque wiring electrode pattern.
  • Methods for forming the opaque wiring electrode pattern include, for example, pattern formation using the photosensitive conductive composition described above by photolithography, screen printing, gravure printing, and inkjet using a conductive composition (conductive paste).
  • a method of forming a pattern by forming a film of a metal, a metal composite, a composite of a metal and a metal compound, a metal alloy, etc., and forming a pattern by photolithography using a resist when forming opaque wiring electrode patterns on both sides of a transparent substrate, when forming two or more layers of opaque wiring electrode patterns with an insulating layer in between, or when forming thin line patterns and others in separate processes, each opaque The wiring electrode patterns may be formed using the same method, or different methods may be combined.
  • An insulating layer may be formed on the opaque wiring electrode pattern of the obtained substrate with the opaque wiring electrode pattern. Examples of the insulating layer and its formation method include the insulating layer and its formation method illustrated in International Publication No. 2018/168325.
  • a light-shielding layer is formed by transferring a positive photosensitive resin layer containing a light-shielding component onto the opaque wiring electrode pattern forming surface of the transparent substrate.
  • a positive photosensitive resin layer for example, a so-called dry film obtained by applying a positive photosensitive resin composition containing a light-shielding component onto a releasable film and drying as necessary may be used. Can be done.
  • a positive photosensitive resin layer with shape retention properties such as a dry film, the problem caused by the leveling described above can be solved, and a light-shielding layer of a desired thickness can be formed with good processability, making it opaque.
  • the wiring electrode pattern can be made less visible. It is preferable to use a black transfer film, which will be described later, as the dry film.
  • a light-shielding layer forming process using a dry film will be explained as an example.
  • a dry film having a positive photosensitive resin layer containing a light blocking component may be prepared by applying a positive photosensitive resin composition containing a light blocking component onto a releasable film and drying the composition.
  • a release film refers to a film that has a release layer on its surface.
  • Examples of the mold release agent that forms the mold release layer include non-silicone mold release agents and silicone mold release agents.
  • non-silicone mold release agents include long chain alkyl mold release agents, fluorine mold release agents, and the like. Two or more types of these may be used. Among these, even if release agent transfer occurs during transfer, phenomena such as developer repellency are less likely to occur in subsequent processes, especially in the development process, and fine patterns are formed by suppressing in-plane unevenness. Non-silicone mold release agents are preferred.
  • the thickness of the release layer is preferably 50 nm or more from the viewpoint of suppressing transfer unevenness during transfer. On the other hand, the thickness of the release layer is preferably 500 nm or less from the viewpoint of suppressing migration of the release agent during transfer.
  • the peeling force of the release film is preferably 500 mN/20 mm or more from the viewpoint of suppressing repellency during formation of the positive photosensitive resin layer.
  • the peeling force of the release film is preferably 5,000 mN/20 mm or less from the viewpoint of widening the process margin during transfer of the positive photosensitive resin layer.
  • the peeling force of the release film means that acrylic adhesive tape "31B" manufactured by Nitto Denko Co., Ltd. is applied to the surface on which the release layer is formed using a 2 kg roller, left for 30 minutes, and then peeled off. It refers to the peeling force when peeled at an angle of 180° and a peeling speed of 0.3 m/min.
  • films used for the release film include films containing resins such as polyethylene terephthalate (PET), cycloolefin polymers, polycarbonates, polyimides, aramids, fluororesins, acrylic resins, and polyurethane resins. Two or more types of these may be used. Among these, those that are transparent to exposure light used in the light-shielding pattern forming step described below are preferred, and films containing PET, cycloolefin polymer, and polycarbonate are preferred. By selecting a film that is transparent to exposure light, exposure can be performed through the release film in the light-shielding pattern forming step described below. In this case, by interposing a release film between the positive photosensitive resin layer and the photomask, contamination of the photomask can be suppressed.
  • resins such as polyethylene terephthalate (PET), cycloolefin polymers, polycarbonates, polyimides, aramids, fluororesins, acrylic resins, and polyurethan
  • the thickness of the release film is preferably 5 ⁇ m or more, more preferably 10 ⁇ m or more, from the viewpoint of improving transport stability during the formation of the positive photosensitive resin layer and suppressing thickness unevenness of the positive photosensitive resin layer.
  • the thickness of the releasable film is preferably 300 ⁇ m or less, more preferably 200 ⁇ m or less, from the viewpoint of ease of handling during peeling.
  • Examples of light-shielding components include dyes, organic pigments, and inorganic pigments. Two or more types of these may be contained. More specifically, for example, those exemplified as colorants in International Publication No. 2018/168325, organic pigments such as soluble azo pigments, insoluble azo pigments, metal complex azo pigments, phthalocyanine pigments, and condensed polycyclic pigments, Examples include iron oxides such as smoke, ultramarine, iron black, hematite, goethite, and magnetite, titanium, chromium, lead, and metal complexes of these. Two or more types of these may be used. Among these, carbon black is preferred from the viewpoint of easy availability, and titanium nitride is preferred from the viewpoint of light transmittance of exposure light.
  • the content of the light-shielding component in the positive photosensitive resin layer is preferably 5 to 30% by mass.
  • the positive photosensitive resin composition refers to a composition having positive photosensitivity in which the light irradiated part dissolves in a developer, and preferably contains a photosensitizer (dissolution inhibitor) and an alkali-soluble resin. Furthermore, it may contain a plasticizer, a leveling agent, a surfactant, a rust preventive agent, a crosslinking agent, a silane coupling agent, an antifoaming agent, a stabilizer, etc., within a range that does not impair desired properties. Moreover, it is preferable to contain a solvent, and the viscosity of the positive photosensitive resin composition can be adjusted to a desired range.
  • photosensitizer dissolution inhibitor
  • photosensitizer dissolution inhibitor
  • examples of the photosensitizer include those exemplified as the photosensitizer (dissolution inhibitor) contained in the positive photosensitive composition in International Publication No. 2018/168325.
  • the content of the photosensitizer (dissolution inhibitor) in the positive photosensitive resin layer is preferably 5 to 25% by mass.
  • the alkali-soluble resin examples include resins having hydroxyl groups and/or carboxyl groups, and (b) resins having phenolic hydroxyl groups are preferred.
  • resins having phenolic hydroxyl groups are preferred.
  • a resin having a phenolic hydroxyl group when a quinonediazide compound is used as a photosensitizer (dissolution inhibitor), the phenolic hydroxyl group and the quinonediazide compound form a hydrogen bond, and the unexposed positive photosensitive resin layer It is possible to further suppress the occurrence of development film loss and peeling of the developed film, and to make the opaque wiring electrode pattern less visible.
  • resins having phenolic hydroxyl groups include novolak resins such as phenol novolac resins and cresol novolac resins, polymers of monomers having phenolic hydroxyl groups, and copolymers with styrene, acrylonitrile, acrylic monomers, etc. can be mentioned. Two or more types of these may be contained.
  • Examples of monomers having a phenol hydroxyl group include 4-hydroxystyrene, hydroxyphenyl (meth)acrylate, and the like.
  • (b-1) acrylic resin having a phenolic hydroxyl group and a carboxyl group (hereinafter sometimes referred to as “(b-1) resin")
  • (b-2) phenol novolak resin hereinafter referred to as “(b-1) resin”
  • (b-2) (sometimes referred to as "resin") is preferable.
  • the developer used in the developing step includes those exemplified later.
  • development with sodium carbonate aqueous solution has been required due to the fact that there is less change in alkali concentration over time during development compared to strong alkaline developing solutions such as tetramethylammonium hydroxide aqueous solution and potassium hydroxide aqueous solution, and from the viewpoint of safety.
  • strong alkaline developing solutions such as tetramethylammonium hydroxide aqueous solution and potassium hydroxide aqueous solution
  • Sodium carbonate aqueous solution tends to have lower developability than other developing solutions such as tetramethylammonium hydroxide aqueous solution, but (b-1) Because it contains resin, sodium carbonate has less concentration change over time. Developability for aqueous solutions can be improved.
  • the weight average molecular weight of the resin is preferably 9,000 to 13,000.
  • the acid value of the resin is preferably 30 to 250 mgKOH/g from the viewpoint of solubility in a developer.
  • (b-2) resin it is preferable to contain (b-2) resin together with (b-1) resin.
  • (b-2) resin By further containing a resin, the positive photosensitive resin layer becomes more easily softened by heating and can be transferred at low temperatures, so that distortion of the transparent substrate due to heat can be suppressed. Furthermore, when a sodium carbonate aqueous solution is used as the developer, the developability of the resin (b-2) is lower than that of the resin (b-1), so it is possible to adjust the solubility in the developer.
  • the weight average molecular weight of the resin is preferably 100 to 1,500 from the viewpoint of transferring at a lower temperature.
  • the weight average molecular weight of the resin (b-2) is preferably 3,000 to 15,000 from the viewpoint of appropriately lowering the solubility in a developer. It may contain two or more types of resins (b-2) having different weight average molecular weights.
  • the mass ratio ((b-1)/(b-2)) of the content of the resin (b-1) to the content of the resin (b-2) is 1 .0 or more is preferable.
  • the mass ratio ((b-1)/(b-2)) is preferably 3.0 or less from the viewpoint of transferring at a lower temperature.
  • the content of the alkali-soluble resin in the positive photosensitive resin layer is preferably 45 to 65% by mass.
  • the positive photosensitive resin composition further contains a benzotriazole compound.
  • a benzotriazole compound By containing the benzotriazole compound, the transferability of the positive photosensitive resin layer to the opaque wiring electrode pattern is further improved. Furthermore, corrosion of metal contained in the opaque wiring electrode pattern and ion migration can be suppressed.
  • carboxybenzotriazole is preferred from the viewpoint of improving transferability and from the viewpoint of less volatilization during the heating process.
  • Examples of the solvent include those exemplified as solvents included in the positive photosensitive composition in International Publication No. 2018/168325.
  • Examples of methods for applying the positive photosensitive resin composition onto the release film include spin coating using a spinner, spray coating, roll coating, screen printing, or a slit coater, blade coater, die coater, or calendar. Application using a coater, a meniscus coater, a bar coater, etc. can be mentioned.
  • the coating thickness of the positive photosensitive resin composition is preferably set so that the thickness T1 of the positive photosensitive resin layer after drying falls within the preferred range described below.
  • the positive photosensitive resin composition contains a solvent
  • the drying temperature is preferably 60 to 120°C, and the drying time is preferably 1 to 20 minutes.
  • the heating drying device for example, an oven, a hot plate, etc. are preferable.
  • the thickness T1 [ ⁇ m] of the positive photosensitive resin layer is preferably 0.3 or more, more preferably 0.5 or more, from the viewpoint of making the opaque wiring electrode pattern more difficult to see. On the other hand, T1 [ ⁇ m] is preferably 2.0 or less from the viewpoint of reducing development time and further improving processability.
  • the thickness T1 [ ⁇ m] of the positive photosensitive resin layer can be determined by measuring the thickness at five randomly selected locations using a stylus step meter and calculating the average value. .
  • the sum of the thickness T1 [ ⁇ m] of the above-mentioned positive photosensitive resin layer and the thickness T2 [ ⁇ m] of the opaque wiring electrode pattern is 1.5 to 10.0, and T1 and T2 satisfy the following formula (1). It is preferable to be satisfied. 0.1 ⁇ T1/(T1+T2) ⁇ 0.5 (1)
  • the sum of T1 [ ⁇ m] and T2 [ ⁇ m] is more preferably 2.0 or more.
  • T1 [ ⁇ m] and T2 [ ⁇ m] are set to 10.0 or less and satisfying the above formula (1), when the substrate with wiring electrodes has an overcoat layer, unevenness on the transparent substrate can be reduced. This makes it possible to suppress the generation of bubbles due to differences in level during overcoat layer lamination.
  • the sum of T1 [ ⁇ m] and T2 [ ⁇ m] is more preferably 5.0 or less, and even more preferably 3.5 or less.
  • a light-shielding layer is formed by transferring a positive photosensitive resin layer containing a light-shielding component onto the opaque wiring electrode pattern forming surface of the transparent substrate.
  • the transfer method include a method of thermocompression bonding the dry film obtained by the above method so that the positive photosensitive resin layer is in contact with the transparent substrate.
  • the thermocompression bonding temperature is preferably 70°C or higher, more preferably 100°C or higher.
  • the thermocompression bonding temperature is preferably 150° C. or lower from the viewpoint of suppressing deactivation of the photosensitizer (dissolution inhibitor) due to heat.
  • the light-shielding layer it is not necessary to transfer the light-shielding layer to a portion such as a pad portion or a terminal portion where an opaque wiring electrode pattern is desired to be exposed in order to ensure conduction with an external element. Further, the light shielding layer does not need to be transferred to the opaque wiring electrode pattern opening. Since the transfer layer is not transferred to the opening of the opaque wiring electrode pattern, the time required to develop the light-shielding layer can be further shortened and processability can be further improved.
  • the releasable film is peeled off if necessary.
  • the light-shielding pattern forming step described below when exposing through a releasable film, it may be peeled off after exposure.
  • the light-shielding layer is exposed to light using the opaque wiring electrode pattern as a mask, and developed, thereby forming a light-shielding pattern in the region corresponding to the opaque wiring electrode pattern.
  • the opaque wiring electrode pattern forming step includes forming a first opaque wiring electrode pattern on one side of a transparent substrate, forming an insulating layer on the first opaque wiring electrode pattern, and forming a first opaque wiring electrode pattern on the insulating layer.
  • the exposure is preferably performed from the opposite surface to the surface on which the light-shielding layer is formed.
  • an exposure mask may be used to remove the light-shielding layer from the surface on which the light-shielding layer is formed. It may also be exposed from the side.
  • the exposure light preferably emits light in the ultraviolet region that matches the absorption wavelength of the photosensitizer (dissolution inhibitor) contained in the light-shielding layer, that is, in the wavelength range of 200 nm to 450 nm.
  • light sources for obtaining such exposure light include mercury lamps, halogen lamps, xenon lamps, LED lamps, semiconductor lasers, and KrF or ArF excimer lasers.
  • i-line (wavelength: 365 nm) of a mercury lamp and LED lamp are preferable.
  • the exposure light may be irradiated while the substrate is left still, or may be irradiated while being transported over the light source in a direction in which the exposure light is irradiated onto the surface opposite to the surface on which the light shielding layer is formed.
  • the exposed portion By developing the exposed light-shielding layer, the exposed portion can be removed and a light-shielding pattern can be formed in the region corresponding to the opaque wiring electrode pattern.
  • the developer is preferably one that does not inhibit the conductivity of the opaque wiring electrode pattern, and an alkaline developer is preferred.
  • alkaline developer examples include those exemplified as the developer in International Publication No. 2018/168325.
  • an aqueous sodium carbonate solution has been preferably used because it is highly safe and shows little change in alkali concentration over time during development.
  • Examples of developing methods include spraying a developer onto the surface of the light-shielding layer while the substrate is left standing or rotating, immersing the light-shielding layer in the developer, and applying ultrasonic waves while the light-shielding layer is immersed in the developer. Examples include how to apply.
  • the light-shielding pattern obtained by the development process may be subjected to a rinsing treatment using a rinsing liquid.
  • a rinsing liquid examples include those exemplified as the rinsing liquid in International Publication No. 2018/168325.
  • the obtained light-shielding pattern may be further heated at 100°C to 300°C.
  • the heating method include heating using an oven, an inert oven, a hot plate, and heating using electromagnetic waves such as an infrared heater.
  • the method may include a step of forming an overcoat layer on the light-shielding pattern of the obtained substrate with wiring electrodes.
  • the overcoat layer include an insulating layer and an adhesive layer having adhesive properties. Two or more layers of these may be laminated.
  • Examples of the method for forming the insulating layer include the method exemplified in International Publication No. 2018/168325.
  • Examples of the method for forming the adhesive layer include a method of laminating a transparent adhesive film onto a light-shielding pattern using a rubber roller or the like.
  • a black transfer film that is preferably used as a dry film in the step of forming a light-shielding layer by transferring a positive photosensitive resin layer will be described.
  • the black transfer film has a positive photosensitive resin layer containing (a) a black pigment, (b) a resin having a phenolic hydroxyl group, and (c) a quinonediazide compound on a release film.
  • releasable film examples include those exemplified as the releasable film in the light-shielding layer forming step using a dry film in the method for manufacturing a substrate with wiring electrodes of the present invention described above.
  • Examples of the positive photosensitive resin layer include those exemplified as the positive photosensitive resin layer in the method for manufacturing a substrate with wiring electrodes of the present invention described above.
  • the black pigment may be an organic pigment or an inorganic pigment.
  • the organic pigment include soluble azo pigments, insoluble azo pigments, metal complex azo pigments, phthalocyanine pigments, and condensed polycyclic pigments.
  • inorganic pigments include carbon black, graphite, pine smoke, iron oxides such as iron black, hematite, goethite, and magnetite, titanium, chromium, lead, and metal composites thereof. Two or more types of these may be contained.
  • the content of black pigment in the positive photosensitive resin layer is preferably 5 to 30% by mass.
  • the thickness T1 [ ⁇ m] of the positive photosensitive resin layer is preferably 0.3 or more, more preferably 0.5 or more, from the viewpoint of making the opaque wiring electrode pattern more difficult to see in the method of manufacturing a substrate with wiring electrodes. .
  • T1 [ ⁇ m] is preferably 2.0 or less from the viewpoint of reducing development time and further improving processability in the method of manufacturing a substrate with wiring electrodes.
  • the materials used in each example are as follows. Note that the transmittance of the transparent substrate at a wavelength of 365 nm was measured using an ultraviolet-visible spectrophotometer (U-3310, manufactured by Hitachi High-Technologies Corporation).
  • EA ethyl acrylate
  • 2-EHMA 2-ethylhexyl methacrylate
  • St 20 g of styrene
  • An acrylic resin having a carboxy group of /5/15 was obtained.
  • the acid value of the obtained acrylic resin having a carboxyl group was measured according to JIS K 0070 (1992) and was found to be 103 mgKOH/g.
  • the weight average molecular weight of the obtained acrylic resin having a carboxyl group was 17,000.
  • Nikalac (registered trademark)" MW-390 manufactured by Sanwa Chemical Co., Ltd.
  • carboxybenzotriazole "VERZONE (registered trademark)” C-BTA (manufactured by Daiwa Kasei Co., Ltd.)
  • 0.01 g of leveling Add agent "BYK (registered trademark)” -331 (manufactured by BYK Chemie Co., Ltd.) and 44.20 g of PGMEA, and add a rotation-revolution vacuum mixer "Awatori Rentaro (registered trademark)” ARE-310 (manufactured by Shinky Co., Ltd.). 48.90 g of resin solution was obtained.
  • Thickness of positive type photosensitive resin layer The positive type photosensitive resin layer of the black transfer film obtained in Reference Examples 1 to 11 was measured using a stylus type profilometer “Surfcom” (registered trademark) 1400 (Tokyo Co., Ltd.). The thickness was measured at five randomly selected locations using a micrometer (manufactured by Seimitsu), and the average value was calculated.
  • the cross-section of the light-shielding layer formed on the opaque wiring electrode pattern was observed using SEM, the thickness of five randomly selected locations was measured, and the average thickness was measured. The value was calculated.
  • a non-silicone mold release agent AL-5 (manufactured by Lintec Corporation) was applied to one side of PET film "Lumirror (registered trademark)" FB40 (manufactured by Toray Industries, Inc.) (thickness: 16 ⁇ m), followed by heat treatment and drying.
  • a release layer with a thickness of 100 nm was formed on the surface of the base material to obtain a release film.
  • acrylic adhesive tape "31B” manufactured by Nitto Denko Co., Ltd. was applied to the surface on which the release layer was formed using a 2 kg roller, left to stand for 30 minutes, and then peeled at a peel angle of 180°. When the peeling force was measured at a peeling speed of 0.3 m/min, it was 1,480 mN/20 mm.
  • the positive photosensitive resin composition (E-1) obtained in Production Example 6 was applied to the release layer surface of the obtained release film so that the thickness after drying was 0.7 ⁇ m.
  • a positive photosensitive resin layer was formed by drying at 80° C. for 4 minutes to obtain a black transfer film (F-1).
  • Example 1 ⁇ Opaque wiring electrode pattern formation process>
  • the film obtained in Production Example 3 was placed on one side of PET film "Lumirror (registered trademark)" T60 (manufactured by Toray Industries, Inc., thickness: 75 ⁇ m, transmittance at wavelength 365 nm: 77%, transmittance at wavelength 550 nm: 89%).
  • the photosensitive conductive paste (D-1) was printed by screen printing to a thickness of 1.6 ⁇ m after drying, and dried at 100° C. for 10 minutes. The exposure amount is 500 mJ/cm 2 (wavelength 365 nm equivalent).
  • the opaque wiring electrode pattern has a mesh pitch P of 150 ⁇ m, a mesh angle ⁇ of 90°, and is a negative pattern having an opening 9 with an opening width of 4 ⁇ m and a light shielding portion 8. Thereafter, immersion development was performed for 30 seconds using a 0.2% by mass aqueous sodium carbonate solution as a developer, and further, after rinsing with ultrapure water, the opaque wiring electrode pattern was cured for 30 minutes in an IR heater furnace at 140°C. was formed. As a result of measuring the line width and thickness of the opaque wiring electrode pattern by the method described above, the line width was 6 ⁇ m and the thickness was 1.6 ⁇ m. Further, when the light transmittance at wavelengths of 365 nm and 550 nm was measured by the method described above, both were 1%.
  • Black transfer was carried out at 110° C. at a speed of 0.2 m/min so that the positive photosensitive resin layer of the black transfer film (F-1) obtained in Reference Example 1 was in contact with the obtained opaque wiring electrode pattern.
  • the film (F-1) was thermocompression bonded, and the releasable film was peeled off.
  • ⁇ Shading pattern formation process> Using the opaque wiring electrode pattern as a mask, using an exposure device (PEM-6M), the exposure amount (converted to a wavelength of 365 nm) of 100 J/cm 2 , 300 J/cm 2 , 500 J/cm was applied from the side opposite to the surface on which the opaque wiring electrode pattern was formed. Exposure was performed under the following conditions: cm 2 , 1,000 J/cm 2 , 2,000 J/cm 2 , and 4,000 mJ/cm 2 . Thereafter, using an exposure device (PEM-6M), an exposure dose of 500 mJ/ cm 2 (converted to a wavelength of 365 nm).
  • PEM-6M an exposure dose of 500 mJ/ cm 2 (converted to a wavelength of 365 nm).
  • Example 2 ⁇ Opaque wiring electrode pattern formation process> A copper film with a thickness of 2.5 ⁇ m was entirely formed on one side of a PET film “Lumirror (registered trademark)” T60 (manufactured by Toray Industries, Inc.) by a vapor deposition method. Next, resist LC-140 (manufactured by Rohm and Haas Electronic Materials Co., Ltd.) was applied onto the copper film by spin coating and dried at 100° C. for 5 minutes. Next, using an exposure device (PEM-6M; manufactured by Union Optical Co., Ltd.) through an exposure mask having a pad section 6 and a mesh-shaped fine line pattern section 7 as shown in FIG. 2 (converted to a wavelength of 365 nm).
  • PET film “Lumirror (registered trademark)” T60 manufactured by Toray Industries, Inc.
  • resist LC-140 manufactured by Rohm and Haas Electronic Materials Co., Ltd.
  • the mesh-shaped pattern shown in FIG. 6 has a mesh pitch P of 150 ⁇ m, a mesh angle ⁇ of 90°, and is a positive pattern having an opening 9 and a light-shielding portion 8 with a light-shielding width of 16 ⁇ m.
  • immersion development was performed for 30 seconds using a 2.38% by mass TMAH aqueous solution as a developer, followed by rinsing with ultrapure water for 30 seconds.
  • etching was performed using a ferric chloride aqueous solution so that the line width was 6 ⁇ m, and the film was further rinsed with ultrapure water for 30 seconds.
  • ⁇ Light-shielding layer forming step> and ⁇ Light-shielding pattern forming step> were carried out in the same manner as in Example 1 to obtain a substrate with wiring electrodes.
  • Example 3 A substrate with wiring electrodes was obtained in the same manner as in Example 1 except that the opening width of the exposure mask used in the ⁇ opaque wiring electrode pattern formation step> was changed to 10 ⁇ m.
  • Example 4 ⁇ Opaque wiring electrode pattern formation process>
  • the photosensitive conductive paste obtained in Production Example 4 was placed on one side of alkali-free glass "AN Wizus" (registered trademark) (manufactured by AGC Co., Ltd., transmittance at wavelength 365 nm: 91%, transmittance at wavelength 550 nm: 92%).
  • D-2 was applied by spin coating to a thickness of 1 ⁇ m after drying, and dried at 90° C. for 8 minutes. The exposure amount was 150 mJ/cm 2 (wavelength 365 nm equivalent).
  • the mesh-shaped pattern is a negative pattern having a mesh pitch P of 150 ⁇ m, a mesh angle ⁇ of 90°, and an opening 9 with an opening width of 6 ⁇ m and a light shielding portion 8, as shown in FIG.
  • development was performed using a 0.1% by mass TMAH aqueous solution as a developer for twice the time it took for the exposed area to dissolve, and then rinsed with ultrapure water for 30 seconds, and then placed in a box oven at 240°C for 60 minutes. It was cured to form an opaque wiring electrode pattern.
  • the line width and thickness of the opaque wiring electrode pattern were measured by the method described above, and the line width was 6 ⁇ m and the thickness was 0.5 ⁇ m. Further, when the light transmittance at wavelengths of 365 nm and 550 nm was measured by the method described above, both were 0%.
  • a light shielding layer was formed in the same manner as described above.
  • a substrate with wiring electrodes was obtained in the same manner as in Example 1.
  • Examples 5, 7-8, 10-11 A substrate with wiring electrodes was obtained in the same manner as in Example 1, except that the black transfer film used in the ⁇ light shielding layer forming step> was changed as shown in Tables 2 and 3.
  • Example 6 A substrate with wiring electrodes was obtained in the same manner as in Example 4, except that the black transfer film used in the ⁇ light shielding layer forming step> was changed as shown in Table 2.
  • Example 9 A substrate with wiring electrodes was obtained in the same manner as in Example 2, except that the black transfer film used in the ⁇ light shielding layer forming step> was changed as shown in Table 3.
  • Example 12 to 16 The black transfer film used in the ⁇ light-shielding layer formation process> was changed as shown in Tables 3 and 4, and in the ⁇ light-shielding pattern formation process>, a 5.0 mass% TMAH aqueous solution was used instead of a 2.38 mass% TMAH aqueous solution as the developer.
  • a substrate with wiring electrodes was obtained in the same manner as in Example 1 except that a % sodium carbonate aqueous solution was used.
  • the positive photosensitive resin composition (E-1) obtained in Production Example 6 is applied onto the opaque wiring electrode pattern by spin coating after drying the area where the opaque wiring electrode pattern is not formed.
  • a substrate with wiring electrodes was obtained in the same manner as in Example 1, except that it was coated to a thickness of 2.6 ⁇ m and dried at 100° C. for 10 minutes to form a light shielding layer. The thickness of the light shielding layer was measured by the method described above and was found to be 1.0 ⁇ m.
  • Example 2 A substrate with wiring electrodes was obtained in the same manner as in Example 1 except that the ⁇ light-shielding layer forming step> and ⁇ light-shielding pattern forming step> were not performed.
  • the positive photosensitive resin composition (E-1) obtained in Production Example 6 is applied onto the opaque wiring electrode pattern by spin coating after drying the area where the opaque wiring electrode pattern is not formed.
  • a substrate with wiring electrodes was obtained in the same manner as in Example 2, except that it was coated to a thickness of 2.6 ⁇ m and dried at 100° C. for 10 minutes to form a light shielding layer. The thickness of the light shielding layer was measured by the method described above and was found to be 0.3 ⁇ m.
  • Example 4 A substrate with wiring electrodes was obtained in the same manner as in Example 2 except that the ⁇ light-shielding layer forming step> and ⁇ light-shielding pattern forming step> were not performed.

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  • Manufacturing Of Printed Wiring (AREA)
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0862617A (ja) * 1994-08-26 1996-03-08 Ricoh Co Ltd 導電性感光性樹脂および該樹脂を使用する電極間の接続方法
JP2000200960A (ja) * 1999-01-05 2000-07-18 Sony Corp ソルダ―レジストおよびその形成方法
WO2018061506A1 (ja) * 2016-09-29 2018-04-05 富士フイルム株式会社 タッチパネルの製造方法
WO2018168325A1 (ja) * 2017-03-17 2018-09-20 東レ株式会社 配線電極付き基板の製造方法および配線電極付き基板
JP2021162666A (ja) * 2020-03-31 2021-10-11 東レ株式会社 配線電極付き基板の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0862617A (ja) * 1994-08-26 1996-03-08 Ricoh Co Ltd 導電性感光性樹脂および該樹脂を使用する電極間の接続方法
JP2000200960A (ja) * 1999-01-05 2000-07-18 Sony Corp ソルダ―レジストおよびその形成方法
WO2018061506A1 (ja) * 2016-09-29 2018-04-05 富士フイルム株式会社 タッチパネルの製造方法
WO2018168325A1 (ja) * 2017-03-17 2018-09-20 東レ株式会社 配線電極付き基板の製造方法および配線電極付き基板
JP2021162666A (ja) * 2020-03-31 2021-10-11 東レ株式会社 配線電極付き基板の製造方法

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