WO2023285460A3 - Verfahren zur herstellung eines elektronischen halbleiterbauelements - Google Patents
Verfahren zur herstellung eines elektronischen halbleiterbauelements Download PDFInfo
- Publication number
- WO2023285460A3 WO2023285460A3 PCT/EP2022/069462 EP2022069462W WO2023285460A3 WO 2023285460 A3 WO2023285460 A3 WO 2023285460A3 EP 2022069462 W EP2022069462 W EP 2022069462W WO 2023285460 A3 WO2023285460 A3 WO 2023285460A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- producing
- donor substrate
- layer
- semiconductor component
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 12
- 239000002131 composite material Substances 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP22751035.1A EP4371147A2 (de) | 2021-07-15 | 2022-07-12 | Verfahren zur herstellung eines elektronischen halbleiterbauelements |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102021118315.4A DE102021118315A1 (de) | 2021-07-15 | 2021-07-15 | Verfahren zur Herstellung eines elektronischen Halbleiterbauelements |
DE102021118315.4 | 2021-07-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2023285460A2 WO2023285460A2 (de) | 2023-01-19 |
WO2023285460A3 true WO2023285460A3 (de) | 2023-03-30 |
Family
ID=82799866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2022/069462 WO2023285460A2 (de) | 2021-07-15 | 2022-07-12 | Verfahren zur herstellung eines elektronischen halbleiterbauelements |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP4371147A2 (de) |
DE (1) | DE102021118315A1 (de) |
WO (1) | WO2023285460A2 (de) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014103518A1 (de) * | 2013-03-14 | 2014-09-18 | Infineon Technologies Ag | Ein verfahren zum herstellen eines siliziumkarbidsubstrats für eine elektrische siliziumkarbidvorrichtung, ein siliziumkarbidsubstrat und eine elektrische siliziumkarbidvorrichtung |
US20180277372A1 (en) * | 2017-03-24 | 2018-09-27 | Sumitomo Heavy Industries, Ltd. | Laser annealing method and laser annealing device |
US10903078B2 (en) * | 2018-05-28 | 2021-01-26 | Infineon Technologies Ag | Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7084456B2 (en) | 1999-05-25 | 2006-08-01 | Advanced Analogic Technologies, Inc. | Trench MOSFET with recessed clamping diode using graded doping |
US7579654B2 (en) | 2006-05-31 | 2009-08-25 | Corning Incorporated | Semiconductor on insulator structure made using radiation annealing |
JP6332446B2 (ja) | 2014-06-12 | 2018-05-30 | 富士電機株式会社 | 半導体装置 |
DE102015208097B4 (de) | 2015-04-30 | 2022-03-31 | Infineon Technologies Ag | Herstellen einer Halbleitervorrichtung durch Epitaxie |
DE102016100565B4 (de) | 2016-01-14 | 2022-08-11 | Infineon Technologies Ag | Verfahren zum herstellen einer halbleitervorrichtung |
DE102019112985A1 (de) | 2019-05-16 | 2020-11-19 | mi2-factory GmbH | Verfahren zur Herstellung von Halbleiterbauelementen |
-
2021
- 2021-07-15 DE DE102021118315.4A patent/DE102021118315A1/de active Pending
-
2022
- 2022-07-12 WO PCT/EP2022/069462 patent/WO2023285460A2/de active Application Filing
- 2022-07-12 EP EP22751035.1A patent/EP4371147A2/de active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014103518A1 (de) * | 2013-03-14 | 2014-09-18 | Infineon Technologies Ag | Ein verfahren zum herstellen eines siliziumkarbidsubstrats für eine elektrische siliziumkarbidvorrichtung, ein siliziumkarbidsubstrat und eine elektrische siliziumkarbidvorrichtung |
US20180277372A1 (en) * | 2017-03-24 | 2018-09-27 | Sumitomo Heavy Industries, Ltd. | Laser annealing method and laser annealing device |
US10903078B2 (en) * | 2018-05-28 | 2021-01-26 | Infineon Technologies Ag | Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device |
Non-Patent Citations (1)
Title |
---|
KRIPPENDORF ET AL: "Dotierung von SiC mittels Energiefilter fuer Ionenimplantation", 26 October 2015, MIKROSYSTEMTECHNIK 2015; 4 (CONFERENCE INFO: MIKROSYSTEMTECHNIK 2015 - MIKROSYSTEMTECHNIK KONGRESS 2015; 2015; KARLSRUHE, DEUTSCHLAND),, PAGE(S) 334 - 337, XP009194563 * |
Also Published As
Publication number | Publication date |
---|---|
WO2023285460A2 (de) | 2023-01-19 |
DE102021118315A1 (de) | 2023-01-19 |
EP4371147A2 (de) | 2024-05-22 |
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