WO2023209891A1 - ウエハ加工装置、半導体チップの製造方法および半導体チップ - Google Patents

ウエハ加工装置、半導体チップの製造方法および半導体チップ Download PDF

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Publication number
WO2023209891A1
WO2023209891A1 PCT/JP2022/019154 JP2022019154W WO2023209891A1 WO 2023209891 A1 WO2023209891 A1 WO 2023209891A1 JP 2022019154 W JP2022019154 W JP 2022019154W WO 2023209891 A1 WO2023209891 A1 WO 2023209891A1
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WIPO (PCT)
Prior art keywords
wafer
section
dicing
hand
wafer structure
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/019154
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English (en)
French (fr)
Japanese (ja)
Inventor
芳邦 鈴木
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Yamaha Motor Co Ltd
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Yamaha Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Motor Co Ltd filed Critical Yamaha Motor Co Ltd
Priority to PCT/JP2022/019154 priority Critical patent/WO2023209891A1/ja
Priority to US18/855,543 priority patent/US20250336705A1/en
Priority to DE112023001376.4T priority patent/DE112023001376T5/de
Priority to CN202380035550.4A priority patent/CN119013766A/zh
Priority to PCT/JP2023/003613 priority patent/WO2023210089A1/ja
Priority to JP2024517844A priority patent/JP7821876B2/ja
Priority to KR1020247030915A priority patent/KR20240151811A/ko
Priority to TW112114669A priority patent/TWI869826B/zh
Publication of WO2023209891A1 publication Critical patent/WO2023209891A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3211—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H10P72/3402—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H10P72/3404—Storage means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/742—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance

Definitions

  • the present invention relates to a wafer processing apparatus, a semiconductor chip manufacturing method, and a semiconductor chip, and particularly relates to a wafer processing apparatus, a semiconductor chip manufacturing method, and a semiconductor chip that process a wafer on which a plurality of semiconductor chips are formed.
  • wafer processing apparatuses that process wafers on which a plurality of semiconductor chips are formed.
  • Such a wafer processing apparatus is disclosed in, for example, Japanese Patent No. 6904368.
  • Japanese Patent No. 6904368 discloses a wafer processing apparatus that processes a wafer on which a plurality of integrated circuit chips are formed.
  • This wafer processing apparatus performs dicing on a wafer. Specifically, after the wafer is turned over, dicing is performed on the back surface of the wafer.
  • This invention has been made to solve the above-mentioned problems, and one object of the invention is to make it possible to invert a wafer structure using an inversion mechanism while suppressing the complexity of the structure.
  • An object of the present invention is to provide a possible wafer processing apparatus, a method for manufacturing a semiconductor chip, and a semiconductor chip.
  • a wafer processing apparatus provides a wafer processing apparatus that accommodates a wafer structure including a wafer on which a plurality of semiconductor chips are formed and a sheet member to which the wafer is attached.
  • the wafer structure is transported between the accommodating section, the dicing section that performs dicing to divide the wafer structure wafer supplied from the wafer accommodating section into semiconductor chips, the wafer accommodating section, and the dicing section. and a wafer transfer section, the wafer transfer section including an inversion mechanism that inverts the attitude of the wafer structure.
  • the wafer transfer section is configured to include an inversion mechanism that inverts the attitude of the wafer structure.
  • the reversing mechanism can be provided by effectively utilizing the wafer transfer section, so there is no need to provide a separate and independent reversing mechanism.
  • the wafer structure can be reversed by the reversing mechanism.
  • the wafer structure can be reversed by the reversing mechanism while suppressing the structure from becoming complicated.
  • the wafer transfer section further includes a suction section that suctions the wafer structure, and the reversing mechanism rotates the suction section that suctions the wafer structure in a horizontal direction.
  • the wafer structure is configured to reverse its posture by rotating around the axis. With this configuration, the wafer can be reliably held by suction, so the wafer can be stably reversed and the wafer can be stably transported.
  • the wafer storage section accommodates a wafer structure in which a ring-shaped member surrounding the wafer is not provided, and the wafer transfer section is configured to rotate the wafer structure by an inversion mechanism.
  • the wafer structure is configured to be inverted and to supply the wafer structure to the dicing section.
  • the wafer may not be supplied in an attitude suitable for dicing.
  • the wafer structure can be inverted by the inversion mechanism and the wafer can be Since a posture suitable for dicing can be achieved, dicing can be performed appropriately.
  • the wafer transport section further includes a temporary holding section provided between the wafer storage section and the dicing section and in which the wafer structure can be placed, and the wafer transfer section inverts the wafer structure using an inversion mechanism and performs dicing.
  • the wafer structure is configured to be placed in a temporary storage section before being supplied to the storage section. With this configuration, the next wafer can be prepared in the temporary holding section in an inverted state, so that the next wafer can be quickly supplied to the dicing section.
  • the wafer processing apparatus preferably further includes an expanding section that expands the sheet member to which the wafer diced by the dicing section is attached, and the wafer transport section and the dicing section
  • the wafer structure is configured to be transported between the wafer structure and the expanding section, and the wafer storage section accommodates the wafer structure provided with a ring-shaped member surrounding the wafer.
  • the wafer structure is supplied to the dicing section without inverting the wafer structure by the inversion mechanism, and the wafer structure is inverted by the inversion mechanism and supplied to the expanding section.
  • the wafer in the case of a wafer structure in which a ring-shaped member is provided, the wafer is supplied in a posture suitable for dicing, but the posture of the wafer suitable for dicing and the posture of the wafer suitable for expanding are opposite. In this case, the wafer posture suitable for dicing and the wafer posture suitable for expanding do not match. Therefore, with the above configuration, even in the case of a wafer structure equipped with a ring-shaped member where the wafer posture suitable for dicing and the wafer posture suitable for expansion do not match, the reversing mechanism can be used. The wafer structure can be inverted to properly perform dicing and expansion.
  • the expanding section includes a cooling section that cools the sheet member when expanding the sheet member, and the wafer transport section inverts the wafer structure using an inversion mechanism and receives the wafer structure in the cooling section. is configured to pass.
  • the cooling section can be effectively used to transfer wafers, so there is no need to provide a wafer receiving section independent of the cooling section. As a result, the structure can be prevented from becoming more complicated than when the wafer receiving section is provided independently of the cooling section.
  • the wafer storage section accommodates a wafer structure provided with a ring-shaped member surrounding the wafer, and the wafer transfer section is configured to move the wafer structure by an inversion mechanism.
  • the wafer structure is configured to be inverted and to supply the wafer structure to the dicing section.
  • the wafer may not be supplied in an attitude suitable for dicing.
  • the wafer structure can be inverted by the inversion mechanism, and the wafer can be Since a posture suitable for dicing can be achieved, dicing can be performed appropriately.
  • the wafer transfer section includes a take-out section that takes out the wafer structure from the wafer storage section, a transfer mechanism section that transfers the taken-out wafer structure, and a reversing mechanism. is provided in the transport mechanism section.
  • the wafer transport section includes a take-out transport section that takes out the wafer structure from the wafer storage section and transports the taken-out wafer structure, and the reversing mechanism It is set in.
  • a method for manufacturing a semiconductor chip according to a second aspect of the present invention includes a method for manufacturing a semiconductor chip supplied from a wafer storage unit that stores a wafer structure including a wafer on which a plurality of semiconductor chips are formed and a sheet member to which the wafer is attached.
  • the wafer transfer unit includes an inversion mechanism that inverts the attitude of the wafer structure.
  • the wafer transfer section is configured to include an inversion mechanism that inverts the attitude of the wafer structure.
  • the reversing mechanism can be provided by effectively utilizing the wafer transfer section, so there is no need to provide a separate and independent reversing mechanism.
  • the wafer structure can be reversed by the reversing mechanism.
  • a semiconductor chip according to a third aspect of the present invention is supplied from the wafer accommodating section, which accommodates a wafer structure including a wafer on which a plurality of semiconductor chips are formed, and a sheet member to which the wafer is attached.
  • a dicing unit that performs dicing to divide the wafer structure into semiconductor chips;
  • a wafer transport unit that transports the wafer structure between the wafer storage unit and the dicing unit;
  • the wafer transfer unit is manufactured by a wafer processing apparatus that includes an inversion mechanism that inverts the posture of the wafer structure.
  • the wafer transfer section is configured to include an inversion mechanism that inverts the attitude of the wafer structure.
  • the reversing mechanism can be provided by effectively utilizing the wafer transfer section, so there is no need to provide a separate and independent reversing mechanism.
  • the wafer structure can be reversed by the reversing mechanism.
  • the wafer structure can be reversed by the reversing mechanism while suppressing the structure from becoming complicated.
  • FIG. 1 is a plan view showing a semiconductor wafer processing apparatus provided with a dicing apparatus and an expanding apparatus according to a first embodiment
  • FIG. FIG. 2 is a plan view showing a wafer ring structure processed in the semiconductor wafer processing apparatus according to the first embodiment.
  • 3 is a sectional view taken along line III-III in FIG. 2.
  • FIG. FIG. 2 is a plan view of a dicing device disposed adjacent to the expanding device according to the first embodiment. It is a side view of the dicing device arranged adjacent to the expanding device according to the first embodiment, viewed from the Y2 direction side.
  • FIG. 2 is a plan view of the expanding device according to the first embodiment.
  • FIG. 2 is a side view of the expanding device according to the first embodiment as seen from the Y2 direction side.
  • FIG. 2 is a side view of the expanding device according to the first embodiment as seen from the X1 direction side.
  • 1 is a block diagram showing a control configuration of a semiconductor wafer processing apparatus according to a first embodiment
  • FIG. 2 is a flowchart of the first half of the semiconductor chip manufacturing process of the semiconductor wafer processing apparatus according to the first embodiment.
  • 2 is a flowchart of the latter half of the semiconductor chip manufacturing process of the semiconductor wafer processing apparatus according to the first embodiment.
  • FIG. 3 is a diagram for explaining inversion of a wafer according to the first embodiment.
  • FIG. 7 is a plan view showing a semiconductor wafer processing apparatus provided with a dicing apparatus and an expanding apparatus according to a second embodiment.
  • FIG. 7 is a side view of a semiconductor wafer processing apparatus provided with a dicing apparatus and an expanding apparatus according to a second embodiment, viewed from the Y2 direction side.
  • FIG. 7 is a side view of a semiconductor wafer processing apparatus provided with a dicing apparatus and an expanding apparatus according to a second embodiment, viewed from the X1 direction side.
  • FIG. 2 is a block diagram showing a control configuration of a semiconductor wafer processing apparatus according to a second embodiment.
  • 7 is a flowchart of the first half of the semiconductor chip manufacturing process of the semiconductor wafer processing apparatus according to the second embodiment.
  • 12 is a flowchart of the latter half of the semiconductor chip manufacturing process of the semiconductor wafer processing apparatus according to the second embodiment.
  • FIG. 7 is a plan view showing a semiconductor wafer processing apparatus according to a third embodiment.
  • FIG. 7 is a plan view showing a wafer structure processed in a semiconductor wafer processing apparatus according to a third embodiment.
  • 21 is a sectional view taken along line XXI-XXI in FIG. 20.
  • FIG. FIG. 7 is a side view of the cassette section and the temporary storage section according to the third embodiment as seen from the Y2 direction side.
  • FIG. 12 is a diagram (1) for explaining inversion of a wafer according to a third embodiment;
  • FIG. 7 is a diagram (2) for explaining the inversion of a wafer according to the third embodiment;
  • FIG. 7 is a diagram for explaining imaging of a wafer according to a third embodiment.
  • FIG. 12 is a diagram (1) for explaining inversion of a wafer according to a third embodiment
  • FIG. 7 is a diagram (2) for explaining the inversion of a wafer according to the third embodiment
  • FIG. 7 is a diagram for explaining imaging
  • FIG. 7 is a plan view showing a semiconductor wafer processing apparatus according to a fourth embodiment.
  • FIG. 7 is a side view of the expanding device according to the third embodiment as seen from the Y2 direction side.
  • FIG. 7 is a diagram for explaining inversion of a wafer according to a fourth embodiment.
  • FIG. 7 is a plan view showing a semiconductor wafer processing apparatus according to a modification of the fourth embodiment.
  • FIG. 7 is a diagram for explaining inversion of a wafer according to a modification of the fourth embodiment.
  • a semiconductor wafer processing apparatus 100 is an apparatus that processes a wafer W1 provided in a wafer ring structure W. As shown in FIG. The semiconductor wafer processing apparatus 100 is configured to form a modified layer on the wafer W1 and to divide the wafer W1 along the modified layer to form a plurality of semiconductor chips Ch (see FIG. 8). . Note that the wafer ring structure W is an example of a "wafer structure" in the claims.
  • the wafer ring structure W includes a wafer W1, a sheet member W2, and a ring-shaped member W3.
  • the wafer W1 is a circular thin plate made of crystalline semiconductor material that is a material for semiconductor integrated circuits.
  • a modified layer is formed inside the wafer W1 by processing the semiconductor wafer in the processing apparatus 100 along the dividing line. That is, the wafer W1 is processed so that it can be divided along the dividing line.
  • the sheet member W2 is an elastic adhesive tape.
  • An adhesive layer is provided on the upper surface W21 of the sheet member W2.
  • the wafer W1 is attached to the adhesive layer of the sheet member W2.
  • the ring-shaped member W3 is a ring-shaped metal frame in plan view.
  • the ring-shaped member W3 is attached to the adhesive layer of the sheet member W2 while surrounding the wafer W1.
  • the wafer W1 has a circuit layer W11.
  • the wafer W1 is arranged on the sheet member W2 such that the circuit layer W11 is arranged on the opposite side to the sheet member W2 side.
  • the semiconductor wafer processing apparatus 100 includes a dicing apparatus 1 and an expanding apparatus 2.
  • the vertical direction is defined as the Z direction
  • the upward direction is defined as the Z1 direction
  • the downward direction is defined as the Z2 direction.
  • the direction in which the dicing device 1 and the expanding device 2 are lined up is the X direction
  • the expanding device 2 side in the X direction is the X1 direction
  • the dicing device 1 side in the X direction is the X2 direction. do.
  • the direction perpendicular to the X direction in the horizontal direction is the Y direction
  • one side of the Y direction is the Y1 direction
  • the other side of the Y direction is the Y2 direction.
  • the dicing apparatus 1 is an example of a "dicing section" in the claims.
  • the dicing apparatus 1 divides a wafer W1, which is supplied from a cassette section 202 (described later) and has a plurality of semiconductor chips Ch formed thereon, into a plurality of semiconductor chips Ch. It is configured to perform dicing.
  • the dicing apparatus 1 is configured to form a modified layer by irradiating the wafer W1 with a laser beam having a transmitting wavelength along dividing lines (streets).
  • the modified layer refers to cracks, voids, etc. formed inside the wafer W1 by the laser.
  • the method of forming the modified layer on the wafer W1 in this way is called dicing.
  • the dicing apparatus 1 includes a base 11, a chuck table section 12, a laser section 13, and an imaging section 14.
  • the base 11 is a base on which the chuck table section 12 is installed.
  • the base 11 has a rectangular shape in plan view.
  • the chuck table section 12 includes a suction section 12a, a clamp section 12b, a rotation mechanism 12c, and a table movement mechanism 12d.
  • the suction portion 12a is configured to suction the wafer ring structure W onto the upper surface on the Z1 direction side.
  • the suction unit 12a is a table provided with a suction hole, a suction conduit, and the like for suctioning the lower surface of the ring-shaped member W3 of the wafer ring structure W on the Z2 direction side.
  • the suction portion 12a is supported by a table moving mechanism 12d via a rotation mechanism 12c.
  • the clamp part 12b is provided at the upper end of the suction part 12a.
  • the clamp part 12b is configured to hold down the wafer ring structure W attracted by the attraction part 12a.
  • the clamp part 12b holds down the ring-shaped member W3 of the wafer ring structure W that is attracted by the attraction part 12a from the Z1 direction side. In this way, the wafer ring structure W is held by the suction part 12a and the clamp part 12b.
  • the rotation mechanism 12c is configured to rotate the suction portion 12a in the circumferential direction around a rotation center axis C extending parallel to the Z direction.
  • the rotation mechanism 12c is attached to the upper end of the table moving mechanism 12d.
  • the table moving mechanism 12d is configured to move the wafer ring structure W in the X direction and the Y direction.
  • the table moving mechanism 12d includes an X-direction moving mechanism 121 and a Y-direction moving mechanism 122.
  • the X-direction moving mechanism 121 is configured to move the rotation mechanism 12c in the X1 direction or the X2 direction.
  • the X-direction movement mechanism 121 includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.
  • the Y-direction moving mechanism 122 is configured to move the rotation mechanism 12c in the Y1 direction or the Y2 direction.
  • the Y-direction movement mechanism 122 includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.
  • the laser section 13 is configured to irradiate the wafer W1 of the wafer ring structure W held by the chuck table section 12 with laser light.
  • the laser section 13 is arranged on the Z1 direction side of the chuck table section 12.
  • the laser section 13 includes a laser irradiation section 13a, a mounting member 13b, and a Z-direction moving mechanism 13c.
  • the laser irradiation section 13a is configured to irradiate pulsed laser light.
  • the attachment member 13b is a frame to which the laser section 13 and the imaging section 14 are attached.
  • the Z direction moving mechanism 13c is configured to move the laser section 13 in the Z1 direction or the Z2 direction.
  • the Z-direction movement mechanism 13c includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the laser irradiation unit 13a may be a laser irradiation unit that oscillates continuous wave laser light other than pulsed laser light as laser light, as long as it can form a modified layer by multiphoton absorption.
  • the imaging unit 14 is configured to take an image of the wafer W1 of the wafer ring structure W held by the chuck table unit 12.
  • the imaging section 14 is arranged on the Z1 direction side of the chuck table section 12.
  • the imaging unit 14 includes a high-resolution camera 14a, a wide-angle camera 14b, a Z-direction moving mechanism 14c, and a Z-direction moving mechanism 14d.
  • the high-resolution camera 14a and wide-angle camera 14b are near-infrared imaging cameras.
  • the high-resolution camera 14a has a narrower viewing angle than the wide-angle camera 14b.
  • the high-resolution camera 14a has higher resolution than the wide-angle camera 14b.
  • the wide-angle camera 14b has a wider viewing angle than the high-resolution camera 14a.
  • the wide-angle camera 14b has lower resolution than the high-resolution camera 14a.
  • the high-resolution camera 14a is arranged on the X1 direction side of the laser irradiation section 13a.
  • the wide-angle camera 14b is arranged on the X2 direction side of the laser irradiation section 13a. In this way, the high-resolution camera 14a, the laser irradiation section 13a, and the wide-angle camera 14b are arranged adjacent to each other in this order from the X1 direction to the X2 direction.
  • the Z direction moving mechanism 14c is configured to move the high resolution camera 14a in the Z1 direction or the Z2 direction.
  • the Z-direction movement mechanism 14c includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the Z-direction moving mechanism 14d is configured to move the wide-angle camera 14b in the Z1 direction or the Z2 direction.
  • the Z-direction movement mechanism 14d includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the expander 2 is configured to divide the wafer W1 to form a plurality of semiconductor chips Ch (see FIG. 8). Further, the expanding device 2 is configured to form a sufficient gap between the plurality of semiconductor chips Ch.
  • a modified layer is formed on the wafer W1 by irradiating the wafer W1 with a laser having a wavelength that is transparent to the wafer W1 along a dividing line (street) in the dicing apparatus 1.
  • a plurality of semiconductor chips Ch are formed by dividing the wafer W1 along the modified layer formed in advance in the dicing device 1.
  • the wafer W1 is divided along the modified layer by expanding the sheet member W2. Furthermore, by expanding the sheet member W2 in the expanding device 2, the gaps between the plurality of divided semiconductor chips Ch are widened.
  • the expanding device 2 includes an expanding main body section 200, a base 201, a cassette section 202, a lift-up hand section 203, and a suction hand section 204.
  • the expansion main body 200 is configured to expand a sheet member W2 to which a wafer W1 diced by the dicing apparatus 1 (on which a modified layer has been formed) is attached.
  • the expand body section 200 includes a base 205, a cold air supply section 206, a cooling unit 207, an expand section 208, a base 209, an expansion maintenance member 210, a heat shrink section 211, an ultraviolet irradiation section 212, and a squeegee section. 213 and a clamp section 214.
  • the expandable main body section 200 is an example of an "expandable section” in the claims.
  • the cassette section 202 is an example of a "wafer storage section” in the claims.
  • the lift-up hand section 203 and the suction hand section 204 are an example of a "wafer transfer section” in the claims.
  • the lift-up hand section 203 is an example of a "removal section” in the claims.
  • the suction hand section 204 is an example of a "suction section” and a “conveyance mechanism section” in the claims.
  • the cold air supply section 206 is an example of a "cooling section" in the claims.
  • the base 201 is a base on which the cassette section 202 and the lift-up hand section 203 are installed.
  • the base 201 has a rectangular shape in plan view.
  • the cassette section 202 is configured to be able to accommodate a plurality of wafer ring structures W.
  • the wafer ring structure W is housed in the cassette section 202 such that the sheet member W2 is on the upper side, the wafer W1 is on the lower side, and the circuit layer W11 is on the lower side.
  • the cassette section 202 includes a wafer cassette 202a, a Z-direction moving mechanism 202b, and a pair of mounting sections 202c.
  • a plurality (three) of wafer cassettes 202a are arranged in the Z direction.
  • the wafer cassette 202a has an accommodation space that can accommodate a plurality (five) of wafer ring structures W.
  • the wafer ring structure W is manually supplied and placed on the wafer cassette 202a.
  • the wafer cassette 202a may accommodate one to four wafer ring structures W, or may accommodate six or more wafer ring structures W. Further, one, two, four or more wafer cassettes 202a may be arranged in the Z direction.
  • the Z direction moving mechanism 202b is configured to move the wafer cassette 202a in the Z1 direction or the Z2 direction.
  • the Z-direction movement mechanism 202b includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder. Further, the Z-direction moving mechanism 202b includes a mounting table 202d that supports the wafer cassette 202a from below. A plurality (three) of mounting tables 202d are arranged in accordance with the positions of the plurality of wafer cassettes 202a.
  • a plurality (five) of the pair of placement parts 202c are arranged inside the wafer cassette 202a.
  • the ring-shaped member W3 of the wafer ring structure W is placed on the pair of placement parts 202c from the Z1 direction side.
  • One of the pair of placement parts 202c protrudes in the X2 direction from the inner surface of the wafer cassette 202a on the X1 direction.
  • the other of the pair of placement parts 202c protrudes in the X1 direction from the inner surface of the wafer cassette 202a on the X2 direction.
  • the lift-up hand section 203 is configured to be able to take out the wafer ring structure W from the cassette section 202. Further, the lift-up hand section 203 is configured to be able to accommodate the wafer ring structure W in the cassette section 202.
  • the lift-up hand section 203 includes a Y-direction moving mechanism 203a and a lift-up hand 203b.
  • the Y-direction movement mechanism 203a includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the lift-up hand 203b is configured to support the ring-shaped member W3 of the wafer ring structure W from the Z2 direction side.
  • the suction hand section 204 is configured to suction the ring-shaped member W3 of the wafer ring structure W from the Z1 direction side.
  • the suction hand section 204 includes an X-direction movement mechanism 204a, a Z-direction movement mechanism 204b, and a suction hand 204c.
  • the X-direction moving mechanism 204a is configured to move the suction hand 204c in the X-direction.
  • the Z direction moving mechanism 204b is configured to move the suction hand 204c in the Z direction.
  • the X-direction movement mechanism 204a and the Z-direction movement mechanism 204b have, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.
  • the suction hand 204c is configured to suction and support the ring-shaped member W3 of the wafer ring structure W from the Z1 direction side.
  • the ring-shaped member W3 of the wafer ring structure W is supported by the suction hand 204c by generating negative pressure.
  • the suction hand 204c is provided with a suction hole or the like for suctioning the wafer ring structure W using negative pressure.
  • the lift-up hand section 203 and the suction hand section 204 constitute a wafer transfer section, and the wafer transfer section transfers the wafer ring structure W between the cassette section 202, the dicing device 1, and the expand body section 200. is configured to convey.
  • the wafer transport section includes a lift-up hand section 203 that takes out the wafer ring structure W from the cassette section 202, and a suction hand section 204 that transports the taken out wafer ring structure W.
  • the base 205 is a base on which the expanding section 208, the cooling unit 207, the ultraviolet irradiation section 212, and the squeegee section 213 are installed.
  • the base 205 has a rectangular shape in plan view.
  • the clamp part 214 disposed at a position in the Z1 direction of the cooling unit 207 is shown by a dotted line.
  • the cold air supply unit 206 is configured to cool the sheet member W2 when expanding the sheet member W2.
  • the cold air supply unit 206 is configured to supply cold air to the sheet member W2 from the Z1 direction side when the expanding unit 208 expands the sheet member W2.
  • the cold air supply section 206 includes a supply section main body 206a, a cold air supply port 206b, and a moving mechanism 206c.
  • the cold air supply port 206b is configured to allow the cold air supplied from the cold air supply device to flow out.
  • the cold air supply port 206b is provided at the end of the supply section main body 206a on the Z2 direction side.
  • the cold air supply port 206b is arranged at the center of the end of the supply section main body 206a on the Z2 direction side.
  • the moving mechanism 206c includes, for example, a linear conveyor module or a motor with a ball screw and an encoder.
  • the cold air supply device is a device for generating cold air.
  • the cold air supply device supplies air cooled by, for example, a heat pump.
  • a cold air supply device is installed on the base 205.
  • the cold air supply unit 206 and the cold air supply device are connected through a hose (not shown).
  • the cooling unit 207 is configured to cool the sheet member W2 from the Z2 direction side.
  • the cooling unit 207 includes a cooling member 207a having a cooling body 271 and a Peltier element 272, and a Z-direction moving mechanism 207b.
  • the cooling body 271 is made of a member having a large heat capacity and high thermal conductivity. Cooling body 271 is made of metal such as aluminum.
  • the Peltier element 272 is configured to cool the cooling body 271. Note that the cooling body 271 is not limited to aluminum, and may be made of other members having a large heat capacity and high thermal conductivity.
  • the Z direction moving mechanism 207b is a cylinder.
  • the cooling unit 207 is configured to be movable in the Z1 direction or the Z2 direction by a Z direction movement mechanism 207b. Thereby, the cooling unit 207 can be moved to a position where it contacts the sheet member W2 and a position where it is spaced apart from the sheet member W2.
  • the expanding section 208 is configured to expand the sheet member W2 of the wafer ring structure W to divide the wafer W1 along the dividing line.
  • the expander 208 has an expander ring 281.
  • the expand ring 281 is configured to expand the sheet member W2 by supporting the sheet member W2 from the Z2 direction side.
  • the expand ring 281 has a ring shape in plan view. Note that the structure of the expand ring 281 will be explained in detail later.
  • the base 209 is a base material on which the cold air supply section 206, the expansion maintenance member 210, and the heat shrink section 211 are installed.
  • the expansion maintaining member 210 is configured to press the sheet member W2 from the Z1 direction side so that the sheet member W2 near the wafer W1 does not shrink due to heating by the heating ring 211a. .
  • the expansion maintaining member 210 includes a pressing ring portion 210a, a lid portion 210b, and an air intake portion 210c.
  • the pressing ring portion 210a has a ring shape in plan view.
  • the lid portion 210b is provided on the press ring portion 210a so as to close the opening of the press ring portion 210a.
  • the intake portion 210c is an intake ring having a ring shape when viewed from above. A plurality of intake ports are formed on the lower surface of the intake portion 210c on the Z2 direction side.
  • the press ring portion 210a is configured to move in the Z direction by a Z direction moving mechanism 210d.
  • the Z direction moving mechanism 210d is configured to move the pressing ring portion 210a to a position where it presses the sheet member W2 and a position away from the sheet member W2.
  • the Z-direction movement mechanism 210d includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the heat shrink section 211 is configured to shrink the sheet member W2 expanded by the expand section 208 by heating while maintaining gaps between the plurality of semiconductor chips Ch.
  • the heat shrink part 211 has a heating ring 211a and a Z-direction moving mechanism 211b.
  • the heating ring 211a has a ring shape in plan view.
  • the heating ring 211a has a sheathed heater that heats the sheet member W2.
  • the Z direction moving mechanism 211b is configured to move the heating ring 211a in the Z direction.
  • the Z-direction movement mechanism 211b includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the ultraviolet irradiation unit 212 is configured to irradiate the sheet member W2 with ultraviolet rays in order to reduce the adhesive force of the adhesive layer of the sheet member W2.
  • the ultraviolet irradiation unit 212 includes ultraviolet lighting.
  • the ultraviolet irradiation section 212 is arranged at the end of the pressing section 213a of the squeegee section 213 on the Z1 direction side, which will be described later.
  • the ultraviolet irradiation section 212 is configured to irradiate the sheet member W2 with ultraviolet rays while moving together with the squeegee section 213.
  • the squeegee section 213 is configured to further divide the wafer W1 along the modified layer by locally pressing the wafer W1 from the Z2 direction side after expanding the sheet member W2.
  • the squeegee section 213 includes a pressing section 213a, a Z direction movement mechanism 213b, an X direction movement mechanism 213c, and a rotation mechanism 213d.
  • the pressing section 213a presses the wafer W1 from the Z2 direction side via the sheet member W2 and is moved by the rotating mechanism 213d and the X direction moving mechanism 213c, thereby generating bending stress on the wafer W1 and removing the modified layer.
  • the wafer W1 is configured to be divided along the wafer W1.
  • the pressing portion 213a is raised to the raised position in the Z1 direction by the Z direction moving mechanism 213b, the wafer W1 is pressed through the sheet member W2.
  • the pressing portion 213a is lowered in the Z2 direction to the lowered position by the Z direction moving mechanism 213b, so that the wafer W1 is no longer pressed.
  • the pressing part 213a is a squeegee.
  • the pressing part 213a is attached to the end of the Z1-direction side of the Z-direction moving mechanism 213b.
  • the Z direction moving mechanism 213b is configured to move the pressing part 213a linearly in the Z1 direction or the Z2 direction.
  • the Z direction moving mechanism 213b is, for example, a cylinder.
  • the Z direction moving mechanism 213b is attached to the end of the X direction moving mechanism 213c on the Z1 direction side.
  • the X-direction moving mechanism 213c is attached to the end of the rotation mechanism 213d on the Z1 direction side.
  • the X-direction moving mechanism 213c is configured to linearly move the pressing portion 213a in one direction.
  • the X-direction movement mechanism 213c includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the pressing portion 213a is raised to the raised position by the Z direction moving mechanism 213b.
  • the pressing part 213a locally presses the wafer W1 from the Z2 direction side via the sheet member W2, and the pressing part 213a moves in the Y direction by the X direction moving mechanism 213c, thereby moving the wafer W1. be divided.
  • the pressing portion 213a is lowered to the lowered position by the Z direction moving mechanism 213b.
  • the pressing section 213a is rotated by 90 degrees by the rotation mechanism 213d.
  • the pressing portion 213a is raised to the raised position by the Z direction moving mechanism 213b.
  • the pressing part 213a after the pressing part 213a rotates 90 degrees, the pressing part 213a locally presses the wafer W1 from the Z2 direction side via the sheet member W2, and the pressing part 213a is moved by the X direction moving mechanism 213c. By moving in the X direction, wafer W1 is divided.
  • the clamp portion 214 is configured to grip the ring-shaped member W3 of the wafer ring structure W.
  • the clamp section 214 includes a grip section 214a, a Z direction movement mechanism 214b, and a Y direction movement mechanism 214c.
  • the grip portion 214a supports the ring-shaped member W3 from the Z2 direction side, and holds the ring-shaped member W3 from the Z1 direction side. In this way, the ring-shaped member W3 is held by the gripping portion 214a.
  • the grip portion 214a is attached to a Z-direction moving mechanism 214b.
  • the Z direction moving mechanism 214b is configured to move the clamp portion 214 in the Z direction. Specifically, the Z direction moving mechanism 214b is configured to move the grip portion 214a in the Z1 direction or the Z2 direction.
  • the Z-direction movement mechanism 214b includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the Z direction moving mechanism 214b is attached to the Y direction moving mechanism 214c.
  • the Y direction moving mechanism 214c is configured to move the Z direction moving mechanism 214b in the Y1 direction or the Y2 direction.
  • the Y-direction movement mechanism 214c includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the semiconductor wafer processing apparatus 100 includes a first control section 101, a second control section 102, a third control section 103, a fourth control section 104, a fifth control section 105, It includes a sixth control section 106, a seventh control section 107, an eighth control section 108, an expansion control calculation section 109, a handling control calculation section 110, and a dicing control calculation section 111.
  • the first control section 101 is configured to control the squeegee section 213.
  • the first control unit 101 includes a CPU (Central Processing Unit), and a storage unit including a ROM (Read Only Memory), a RAM (Random Access Memory), and the like.
  • the first control unit 101 may include, as a storage unit, an HDD (Hard Disk Drive) or the like that retains stored information even after the voltage is cut off.
  • the HDD also includes a first control section 101, a second control section 102, a third control section 103, a fourth control section 104, a fifth control section 105, a sixth control section 106, a seventh control section 107, and a third control section 103. It may be provided in common for eight control units 108.
  • the second control section 102 is configured to control the cold air supply section 206 and the cooling unit 207.
  • the second control unit 102 includes a CPU and a storage unit including ROM, RAM, and the like.
  • the third control section 103 is configured to control the heat shrink section 211 and the ultraviolet irradiation section 212.
  • the third control unit 103 includes a CPU and a storage unit including ROM, RAM, and the like. Note that the second control unit 102 and the third control unit 103 may include, as a storage unit, an HDD or the like that retains stored information even after the voltage is cut off.
  • the fourth control section 104 is configured to control the cassette section 202 and the lift-up hand section 203.
  • the fourth control unit 104 includes a CPU and a storage unit including ROM, RAM, and the like.
  • the fifth control section 105 is configured to control the suction hand section 204.
  • the fifth control unit 105 includes a CPU and a storage unit including ROM, RAM, and the like. Note that the fourth control unit 104 and the fifth control unit 105 may include, as a storage unit, an HDD or the like in which stored information is retained even after the voltage is cut off.
  • the sixth control section 106 is configured to control the chuck table section 12.
  • the sixth control unit 106 includes a CPU and a storage unit including ROM, RAM, and the like.
  • the seventh control section 107 is configured to control the laser section 13.
  • the seventh control unit 107 includes a CPU and a storage unit including ROM, RAM, and the like.
  • the eighth control unit 108 is configured to control the imaging unit 14.
  • the eighth control unit 108 includes a CPU and a storage unit including ROM, RAM, and the like. Note that the sixth control unit 106, the seventh control unit 107, and the eighth control unit 108 may include, as a storage unit, an HDD or the like in which stored information is retained even after the voltage is cut off.
  • the expansion control calculation unit 109 is configured to perform calculations related to the expansion process of the sheet member W2 based on the processing results of the first control unit 101, the second control unit 102, and the third control unit 103.
  • the expansion control calculation unit 109 includes a CPU and a storage unit including a ROM, a RAM, and the like.
  • the handling control calculation unit 110 is configured to perform calculations related to the movement process of the wafer ring structure W based on the processing results of the fourth control unit 104 and the fifth control unit 105.
  • Handling control calculation unit 110 includes a CPU and a storage unit including ROM, RAM, and the like.
  • the dicing control calculation unit 111 is configured to perform calculations related to the dicing process of the wafer W1 based on the processing results of the sixth control unit 106, the seventh control unit 107, and the eighth control unit 108.
  • the dicing control calculation unit 111 includes a CPU and a storage unit including a ROM, a RAM, and the like.
  • the storage unit 112 stores programs for operating the dicing device 1 and the expanding device 2.
  • the storage unit 112 includes ROM, RAM, HDD, and the like.
  • step S1 the wafer ring structure W is taken out from the cassette section 202. That is, after the wafer ring structure W housed in the cassette part 202 is supported by the lift-up hand 203b, the lift-up hand 203b is moved in the Y1 direction by the Y-direction moving mechanism 203a, thereby removing the wafer from the cassette part 202. The ring structure W is taken out.
  • step S2 the wafer ring structure W is transferred to the chuck table section 12 of the dicing apparatus 1 by the suction hand 204c. That is, the wafer ring structure W taken out from the cassette section 202 is moved in the X2 direction by the X direction moving mechanism 204a while being sucked by the suction hand 204c. Then, the wafer ring structure W that has moved in the X2 direction is transferred from the suction hand 204c to the chuck table section 12, and then gripped by the chuck table section 12.
  • step S3 a modified layer is formed on the wafer W1 by the laser unit 13.
  • step S4 the wafer ring structure W having the wafer W1 on which the modified layer has been formed is transferred to the clamp section 214 by the suction hand 204c.
  • step S5 the sheet member W2 is cooled by the cold air supply section 206 and the cooling unit 207. That is, the Z-direction moving mechanism 214b moves (lowers) the wafer ring structure W held by the clamp part 214 in the Z2 direction to contact the cooling unit 207, and the cold air supply part 206 supplies cold air from the Z1 direction side. By doing so, the sheet member W2 is cooled.
  • step S6 the wafer ring structure W is moved to the expanding section 208 by the clamping section 214. That is, the wafer ring structure W, in which the sheet member W2 has been cooled, is moved in the Y1 direction by the Y direction moving mechanism 214c while being held by the clamp part 214.
  • step S7 the expanding section 208 expands the sheet member W2. That is, the wafer ring structure W is moved in the Z2 direction by the Z direction moving mechanism 214b while being held by the clamp part 214. Then, the sheet member W2 contacts the expand ring 281 and is expanded by being pulled by the expand ring 281. Thereby, the wafer W1 is divided along the dividing line (modified layer).
  • step S8 the expanded sheet member W2 is held down by the expansion maintaining member 210 from the Z1 direction side. That is, the press ring portion 210a is moved (downward) in the Z2 direction by the Z direction moving mechanism 210d until it comes into contact with the sheet member W2. Then, the process proceeds from point A in FIG. 10 to point A in FIG. 11 to step S9.
  • step S9 after the sheet member W2 is pressed by the expansion maintaining member 210, the ultraviolet ray irradiation unit 212 irradiates the sheet member W2 with ultraviolet rays while pressing the wafer W1 with the squeegee unit 213. As a result, the wafer W1 is further divided by the squeegee section 213. Further, the adhesive strength of the sheet member W2 is reduced by the ultraviolet rays irradiated from the ultraviolet irradiation section 212.
  • step S10 the heat shrink section 211 heats and shrinks the sheet member W2, and the clamp section 214 rises. At this time, the air intake portion 210c sucks air near the heated sheet member W2.
  • step S11 the wafer ring structure W is transferred from the clamp section 214 to the suction hand 204c. That is, the wafer ring structure W is moved in the Y2 direction by the Y direction moving mechanism 214c while being held by the clamp part 214. Then, after the wafer ring structure W is released from the grip by the clamp part 214 at a position on the Z1 direction side of the cooling unit 207, it is sucked by the suction hand 204c.
  • step S12 the wafer ring structure W is transferred to the lift-up hand 203b by the suction hand 204c.
  • step S13 the wafer ring structure W is accommodated in the cassette section 202. That is, the wafer ring structure W supported by the lift-up hand 203b is moved in the Y1 direction by the Y direction moving mechanism 203a, so that the wafer ring structure W is accommodated in the cassette portion 202.
  • the processing performed on one wafer ring structure W is completed. Then, the process returns to step S1 from point B in FIG. 11 to point B in FIG.
  • the suction hand section 204 includes an inversion mechanism 204d that inverts the attitude of the wafer ring structure W.
  • the method for manufacturing semiconductor chips Ch using this semiconductor wafer processing apparatus 100 includes a wafer ring structure W including a wafer W1 on which a plurality of semiconductor chips Ch are formed and a sheet member W2 to which the wafer W1 is attached.
  • the semiconductor chips Ch manufactured by this semiconductor wafer processing apparatus 100 include a wafer ring structure W including a wafer W1 on which a plurality of semiconductor chips Ch are formed and a sheet member W2 to which the wafer W1 is attached.
  • the suction hand section 204 includes a lift-up hand section 203 and a suction hand section 204 that transport the wafer ring structure W between the semiconductor wafer and the semiconductor wafer.
  • the reversing mechanism 204d is provided in the suction hand section 204. Further, in the first embodiment, the reversing mechanism 204d rotates the suction hand 204c of the suction hand section 204, which has suctioned the wafer ring structure W, around the rotation axis Ax extending in the horizontal direction (Y direction). It is configured to invert the attitude of the ring structure W.
  • the reversing mechanism 204d includes a motor and a rotating shaft portion rotated by the motor. The rotating shaft portion of the reversing mechanism 204d is connected to the suction hand 204c so that the suction hand 204c can be rotated around the rotation axis Ax.
  • the suction hand unit 204 supplies the wafer ring structure W to the dicing apparatus 1 without inverting the wafer ring structure W using the inversion mechanism 204d, and the suction hand unit 204 supplies the wafer ring structure W to the dicing apparatus 1 by using the inversion mechanism 204d. It is configured to invert the W and supply it to the expandable main body section 200. Specifically, the suction hand unit 204 supplies the wafer ring structure W, in which the sheet member W2 is placed on the upper side and the wafer W1 is placed on the lower side, to the dicing apparatus 1, and the wafer ring structure W is transferred by the reversing mechanism 204d. By inverting the structure, the wafer ring structure W in which the sheet member W2 is disposed on the lower side and the wafer W1 is disposed on the upper side is supplied to the expandable main body section 200.
  • the suction hand section 204 is configured to invert the wafer ring structure W using the inversion mechanism 204d and deliver it to the cold air supply section 206. Specifically, by inverting the wafer ring structure W using the inversion mechanism 204d, the suction hand section 204 supplies cold air to the wafer ring structure W in which the sheet member W2 is placed on the lower side and the wafer W1 is placed on the upper side. 206.
  • the cold air supply unit 206 is configured to suck the wafer ring structure W by generating negative pressure and receive the wafer ring structure W from the suction hand unit 204 .
  • the cold air supply unit 206 is provided with a suction hole or the like for sucking the wafer ring structure W using negative pressure.
  • the inversion of the wafer ring structure W will be explained.
  • the operation of the dicing apparatus 1 is controlled by a dicing control calculation section 111.
  • the operations of the lift-up hand section 203 and the suction hand section 204 are controlled by the handling control calculation section 110.
  • the operation of the expand body section 200 is controlled by an expand control calculation section 109.
  • the wafer ring structure W in which the sheet member W2 is placed on the upper side and the wafer W1 is placed on the lower side (hereinafter referred to as the wafer ring structure W in the first state) is taken out from the cassette part 202 by the lift-up hand part 203. It will be done. Then, as shown in FIG. 12, the wafer ring structure W in the first state is transferred from the lift-up hand section 203 to the suction hand section 204. Then, the wafer ring structure W in the first state is supplied to the dicing apparatus 1 by the suction hand section 204. In the dicing apparatus 1 , the wafer ring structure W in the first state is received by the chuck table section 12 .
  • a modified layer is formed by irradiating the wafer ring structure W in the first state with laser light from the laser unit 13.
  • the wafer W1 is irradiated with laser light from the laser section 13 from the side opposite to the circuit layer W11 via the sheet member W2.
  • the width of the laser beam may not fit within the width of the street.
  • the wafer ring structure W in the first state is transferred from the chuck table section 12 to the suction hand section 204. Then, while being transported from the dicing apparatus 1 to the expander main body 200, the wafer ring structure W in the first state is reversed by the reversing mechanism 204d. Then, the wafer ring structure W (hereinafter referred to as the wafer ring structure W in the second state) in which the sheet member W2 is disposed on the lower side and the wafer W1 is disposed on the upper side is supplied to the expandable body section 200 by the suction hand section 204. be done.
  • the wafer ring structure W in the second state is transferred from the suction hand section 204 to the cold air supply section 206 .
  • the upper surface of the ring-shaped member W3 of the wafer ring structure W in the second state is attracted by the cold air supply unit 206.
  • the wafer ring structure W in the second state is transferred from the cold air supply section 206 to the clamp section 214.
  • the wafer ring structure W in the second state is cooled by the cold air supply section 206 and the cooling unit 207, expanded by the expanding section 208, irradiated with ultraviolet rays by the ultraviolet irradiation section 212, squeegee breaking by the squeegee section 213, and Heat shrinking is performed by the heat shrinking unit 211. Further, when expanding by the expanding section 208, the wafer ring structure W in the second state in which the sheet member W2 is placed on the lower side and the wafer W1 is placed on the upper side is expanded. In this way, the wafer W1 is supplied to the expander body 200 in an attitude suitable for expanding.
  • the wafer ring structure W in the second state is transferred from the clamp section 214 to the cold air supply section 206. Then, the wafer ring structure W in the second state is transferred from the cold air supply section 206 to the suction hand section 204. Then, during the transfer from the suction hand section 204 to the lift-up hand section 203, the wafer ring structure W in the second state is reversed by the reversing mechanism 204d. Then, the wafer ring structure W in the first state with the sheet member W2 on the upper side and the wafer W1 on the lower side is transferred from the suction hand section 204 to the lift-up hand section 203. Then, the wafer ring structure W in the first state is accommodated in the cassette section 202 by the lift-up hand section 203.
  • the suction hand section 204 is configured to include the inversion mechanism 204d that inverts the attitude of the wafer ring structure W.
  • the reversing mechanism 204d can be provided by effectively utilizing the suction hand section 204, so there is no need to provide the reversing mechanism 204d separately and independently.
  • the wafer ring structure W can be reversed by the reversing mechanism 204d.
  • the wafer ring structure W can be reversed by the reversing mechanism 204d while suppressing the structure from becoming complicated.
  • the reversing mechanism 204d rotates the suction hand 204c of the suction hand section 204 that has suctioned the wafer ring structure W around the rotation axis Ax extending in the horizontal direction. It is configured to reverse the attitude of the wafer ring structure W. Thereby, the wafer W1 can be reliably held by suction, so that the wafer W1 can be stably reversed and the wafer W1 can be stably transported.
  • the semiconductor wafer processing apparatus 100 includes an expander body 200 that expands the sheet member W2 to which the wafer W1 diced by the dicing apparatus 1 is attached.
  • the lift-up hand section 203 and the suction hand section 204 are configured to transport the wafer ring structure W between the dicing apparatus 1 and the expanding body section 200, and the cassette section 202 includes: A wafer ring structure W provided with a ring-shaped member W3 surrounding a wafer W1 is accommodated, and the suction hand section 204 can move the wafer ring structure W without inverting the wafer ring structure W using an inversion mechanism 204d.
  • the wafer ring structure W is reversed by the reversing mechanism 204d, and the wafer ring structure W is supplied to the expand main body 200.
  • the wafer W1 is supplied in a posture suitable for dicing, but the posture of the wafer W1 suitable for dicing and the posture of the wafer suitable for expanding are different. If the orientation of wafer W1 is opposite, the orientation of wafer W1 suitable for dicing and the orientation of wafer W1 suitable for expanding do not match.
  • the expander body section 200 includes the cold air supply section 206 that cools the sheet member W2 when expanding the sheet member W2, and the suction hand section 204
  • the mechanism 204d is configured to invert the wafer ring structure W and deliver it to the cold air supply section 206.
  • the cold air supply unit 206 can be effectively used to transfer the wafer W1, so there is no need to provide a receiving unit for the wafer W1 independently of the cold air supply unit 206.
  • the structure can be prevented from becoming more complicated.
  • the wafer transfer section includes a lift-up hand section 203 that takes out the wafer ring structure W from the cassette section 202, and a suction hand section 204 that transfers the taken out wafer ring structure W.
  • the reversing mechanism 204d is provided in the suction hand section 204. Accordingly, since the lift-up hand section 203 and the suction hand section 204 are provided separately, it is possible to easily take out the wafer ring structure W from the cassette section 202 and transport the taken out wafer ring structure W. can. Further, by providing the reversing mechanism 204d in the suction hand section 204, the wafer ring structure W can be easily reversed by the reversing mechanism 204d.
  • a semiconductor wafer processing apparatus 300 is an apparatus that processes a wafer W1 provided in a wafer ring structure W. As shown in FIGS. 13 and 14, a semiconductor wafer processing apparatus 300 is an apparatus that processes a wafer W1 provided in a wafer ring structure W. As shown in FIGS. 13 and 14, a semiconductor wafer processing apparatus 300 is an apparatus that processes a wafer W1 provided in a wafer ring structure W. As shown in FIGS.
  • the semiconductor wafer processing device 300 includes a dicing device 1 and an expanding device 302.
  • the vertical direction is defined as the Z direction
  • the upward direction is defined as the Z1 direction
  • the downward direction is defined as the Z2 direction.
  • the direction in which the dicing device 1 and the expanding device 302 are lined up is the X direction
  • the expanding device 302 side in the X direction is the X1 direction
  • the dicing device 1 side in the X direction is the X2 direction. do.
  • the direction perpendicular to the X direction in the horizontal direction is the Y direction
  • one side of the Y direction is the Y1 direction
  • the other side of the Y direction is the Y2 direction.
  • the dicing apparatus 1 is configured to form a modified layer by irradiating the wafer W1 with a laser beam having a transmitting wavelength along dividing lines (streets).
  • the dicing apparatus 1 includes a base 11, a chuck table section 12, a laser section 13, and an imaging section 14.
  • the expander 302 is configured to divide the wafer W1 to form a plurality of semiconductor chips Ch.
  • the expanding device 302 includes an expanding main body part 302a, a base 201, a cassette part 202, a lift-up hand part 203, and a suction hand part 204.
  • the expansion main body portion 302a is configured to expand the sheet member W2 to which the wafer W1, which has been diced by the dicing apparatus 1 (on which a modified layer has been formed), is attached.
  • the expand body section 302a includes a base 205, a cold air supply section 206, a cooling unit 207, an expand section 3208, a base 209, an expansion maintenance member 210, a heat shrink section 211, an ultraviolet irradiation section 212, and a squeegee section. 3213 and a clamp portion 214.
  • the expandable body section 302a is an example of an "expandable section" in the claims.
  • the expanding section 3208 is configured to expand the sheet member W2 of the wafer ring structure W to divide the wafer W1 along the dividing line.
  • the expander 3208 includes an expander ring 3281 and a Z-direction moving mechanism 3282.
  • the expand ring 3281 is configured to expand the sheet member W2 by supporting the sheet member W2 from the Z2 direction side.
  • the expand ring 3281 has a ring shape in plan view.
  • the Z direction moving mechanism 3282 is configured to move the expand ring 3281 in the Z1 direction or the Z2 direction.
  • the Z-direction movement mechanism 3282 includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.
  • the Z direction movement mechanism 3282 is attached to the base 205.
  • the squeegee section 3213 is configured to further divide the wafer W1 along the modified layer by pressing the wafer W1 from the Z2 direction side after expanding the sheet member W2.
  • the squeegee portion 3213 includes a pressing portion 3213a, an X-direction movement mechanism 3213b, a Z-direction movement mechanism 3213c, and a rotation mechanism 3213d.
  • the pressing section 3213a is moved in the Z1 direction by the Z direction moving mechanism 3213c, and then moved by the rotating mechanism 3213d and the X direction moving mechanism 3213b while pressing the wafer W1 from the Z2 direction side via the sheet member W2. , the wafer W1 is divided along the modified layer by generating bending stress on the wafer W1.
  • the pressing part 3213a is a squeegee.
  • the pressing portion 3213a is attached to the end of the rotation mechanism 3213d on the Z1 direction side.
  • the Z direction moving mechanism 3213c is configured to move the rotation mechanism 3213d in the Z1 direction or the Z2 direction.
  • the Z direction movement mechanism 3213c has, for example, a cylinder.
  • the Z direction moving mechanism 3213c is attached to the end of the X direction moving mechanism 3213b on the Z1 direction side.
  • the X-direction movement mechanism 3213b includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.
  • the X-direction moving mechanism 3213b is attached to the end of the base 205 on the Z1 direction side.
  • the pressing portion 3213a presses the wafer W1 from the Z2 direction side via the sheet member W2, and the pressing portion 3213a is moved in the Y direction by the X direction moving mechanism 3213b. By moving in the direction, the wafer W1 is divided. Further, in the squeegee portion 3213, after the pressing portion 3213a finishes moving in the Y direction, the pressing portion 3213a is rotated by 90 degrees by the rotation mechanism 3213d.
  • the pressing portion 3213a presses the wafer W1 from the Z2 direction side via the sheet member W2, and the pressing portion 3213a moves in the X direction by the X direction moving mechanism 3213b. By moving in the direction, the wafer W1 is divided.
  • the suction hand section 204 includes an inversion mechanism 204d that inverts the attitude of the wafer ring structure W, and the inversion of the wafer ring structure W by the inversion mechanism 204d is described in the above-mentioned section. This is the same as in the first embodiment.
  • the semiconductor wafer processing apparatus 300 includes a first control section 101, a second control section 102, a third control section 103, a fourth control section 3104, a fifth control section 3105, A sixth control unit 3106, a seventh control unit 3107, an eighth control unit 3108, a ninth control unit 3109, an expansion control calculation unit 3110, a handling control calculation unit 3111, a dicing control calculation unit 3112, and a memory. 3113.
  • the expansion control calculation section 3110, the handling control calculation section 3111, the dicing control calculation section 3112, and the storage section 3113 are respectively the first control section 101, the second control section 102, and the third control section 103 of the first embodiment.
  • the fourth control section 3104 is configured to control the expansion section 3208.
  • the fourth control unit 3104 includes a CPU and a storage unit including ROM, RAM, and the like. Note that the fourth control unit 3104 may include, as a storage unit, an HDD or the like that retains stored information even after the voltage is cut off.
  • Steps S1 to S6, step S8, and step S11 are the same as steps S1 to S6, step S8, and step S11 in the semiconductor chip manufacturing process of the first embodiment, so their explanation will be omitted. do.
  • step S307 the sheet member W2 is expanded by the expanding section 3208. That is, the expand ring 3281 is moved in the Z1 direction by the Z direction movement mechanism 3282. The wafer ring structure W is moved in the Z2 direction by the Z direction moving mechanism 214b while being held by the clamp part 214. Then, the sheet member W2 contacts the expand ring 3281 and is expanded by being pulled by the expand ring 3281. Thereby, the wafer W1 is divided along the dividing line (modified layer).
  • step S309 the heat shrink section 211 heats and shrinks the sheet member W2, and the ultraviolet ray irradiation section 212 irradiates the sheet member W2 with ultraviolet light, while the clamp section 214 rises.
  • the air intake portion 210c sucks air near the heated sheet member W2.
  • step S310 the wafer ring structure W is moved to the squeegee section 3213 by the clamp section 214. That is, the wafer ring structure W is moved in the Y2 direction by the Y direction moving mechanism 214c while being held by the clamp part 214.
  • step S311 after the wafer ring structure W moves to the squeegee section 3213, the wafer W1 is pressed by the squeegee section 3213. As a result, the wafer W1 is further divided by the squeegee portion 3213. Note that the other configurations of the second embodiment are similar to those of the first embodiment.
  • the suction hand section 204 is configured to include the inversion mechanism 204d that inverts the attitude of the wafer ring structure W.
  • the wafer ring structure W can be reversed by the reversing mechanism 204d while suppressing the structure from becoming complicated. Note that other effects of the second embodiment are similar to those of the first embodiment.
  • FIGS. 19 to 25 The configuration of a semiconductor wafer processing apparatus 400 according to the third embodiment will be described with reference to FIGS. 19 to 25.
  • dicing is performed on a wafer structure Wa that is not provided with a ring-shaped member.
  • the semiconductor wafer processing apparatus 400 is an example of a "wafer processing apparatus" in the claims.
  • a semiconductor wafer processing apparatus 400 is an apparatus that processes a wafer W1 provided in a wafer structure Wa.
  • the wafer structure Wa has a wafer W1 and a sheet member W2a, but does not have a ring-shaped member.
  • the sheet member W2a is an adhesive tape for back grinding made of a harder material that does not have elasticity compared to the sheet member W2 for expanding in the first and second embodiments.
  • An adhesive layer is provided on the upper surface of the sheet member W2a.
  • the wafer W1 is attached to the adhesive layer of the sheet member W2a.
  • the wafer W1 is placed on the sheet member W2a such that the circuit layer W11 is placed on the sheet member W2a side.
  • the semiconductor wafer processing apparatus 400 includes a dicing apparatus 1 and a wafer supply apparatus 403.
  • the vertical direction is defined as the Z direction
  • the upward direction is defined as the Z1 direction
  • the downward direction is defined as the Z2 direction.
  • the direction in which the dicing device 1 and the wafer supply device 403 are lined up is the X direction
  • the wafer supply device 403 side in the X direction is the X1 direction
  • the dicing device 1 side in the X direction is the X2 direction.
  • the direction perpendicular to the X direction in the horizontal direction is the Y direction
  • one side of the Y direction is the Y1 direction
  • the other side of the Y direction is the Y2 direction.
  • the dicing apparatus 1 is configured to form a modified layer by irradiating the wafer W1 with a laser beam having a transmitting wavelength along dividing lines (streets).
  • the dicing apparatus 1 includes a base 11, a chuck table section 12, a laser section 13, and an imaging section 14.
  • the wafer supply device 403 is configured to supply a wafer W1 (wafer structure Wa).
  • the wafer supply device 403 includes a base 201 , a cassette section 202 , a lift-up hand section 503 , suction hand sections 504 and 505 , a temporary storage section 506 , and an imaging section 507 .
  • the lift-up hand section 503 and the suction hand sections 504 and 505 are an example of a "wafer transfer section" in the claims.
  • the lift-up hand section 503 is an example of a "removal section” in the claims.
  • the suction hand section 504 is an example of a "suction section” and a "transport mechanism section” in the claims.
  • the base 201 is a base on which the cassette section 202 and the lift-up hand section 503 are installed.
  • the cassette section 202 is configured to be able to accommodate a plurality of wafer structures Wa.
  • the wafer structure Wa is housed in the cassette section 202 such that the sheet member W2 is on the upper side, the wafer W1 is on the lower side, and the circuit layer W11 is on the upper side. Further, the wafer structure Wa is accommodated in the cassette portion 202 so as to be bent downward.
  • the cassette section 202 includes a wafer cassette 202a, a Z-direction moving mechanism 202b, and a pair of mounting sections 202c.
  • the lift-up hand section 503 is configured to be able to take out the wafer structure Wa from the cassette section 202. Further, the lift-up hand section 503 is configured to be able to accommodate the wafer structure Wa in the cassette section 202.
  • the lift-up hand section 503 includes a Y-direction moving mechanism 503a and a lift-up hand 503b.
  • the Y-direction movement mechanism 503a includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.
  • the lift-up hand 503b is configured to suction and support the wafer W1 of the wafer structure Wa from the Z2 direction side by generating negative pressure.
  • the lift-up hand 503b is provided with a suction hole or the like for suctioning the wafer structure Wa using negative pressure.
  • the lift-up hand 503b has an I-shape extending in the Y direction in plan view.
  • the suction hand section 505 is configured to suction the sheet member W2a of the wafer structure Wa from the Z1 direction side.
  • the suction hand section 505 includes a Z-direction moving mechanism 505a and a suction hand 505b.
  • the Z direction moving mechanism 505a is configured to move the suction hand 505b in the Z direction.
  • the Z-direction movement mechanism 505a includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the suction hand 505b is configured to suction and support the sheet member W2a of the wafer structure Wa from the Z1 direction side by generating negative pressure.
  • the suction hand 505b is provided with a suction hole or the like for suctioning the wafer structure Wa using negative pressure.
  • the suction hand 505b has a circular shape in plan view.
  • the suction hand section 504 is configured to suction the wafer structure Wa.
  • the suction hand section 504 includes an X-direction moving mechanism 504a, a Z-direction moving mechanism 504b, a suction hand 504c, and a reversing mechanism 504d.
  • the X-direction moving mechanism 504a is configured to move the suction hand 504c in the X-direction.
  • the Z direction moving mechanism 504b is configured to move the suction hand 504c in the Z direction.
  • the X-direction movement mechanism 504a and the Z-direction movement mechanism 504b have, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.
  • the suction hand 504c is configured to suction and support the wafer structure Wa by generating negative pressure.
  • the suction hand 504c is provided with a suction hole or the like for suctioning the wafer structure Wa using negative pressure.
  • the suction hand 504c has a circular shape with a diameter larger than the wafer structure Wa in a plan view, and is configured to be able to suction substantially the entire wafer structure Wa.
  • the lift-up hand section 503 and suction hand sections 504 and 505 constitute a wafer transfer section, and the wafer transfer section is configured to transfer the wafer structure Wa between the cassette section 202 and the dicing apparatus 1. It is configured.
  • the wafer transport section includes a lift-up hand section 503 that takes out the wafer structure Wa from the cassette section 202, and suction hand sections 504 and 505 that transport the taken out wafer structure Wa.
  • the suction hand section 504 includes an inversion mechanism 504d that inverts the attitude of the wafer structure Wa.
  • the reversing mechanism 504d is provided in the suction hand section 504.
  • the reversing mechanism 504d rotates the suction hand 504c of the suction hand section 504, which has suctioned the wafer structure Wa, around the rotation axis Ax extending in the horizontal direction (Y direction). It is configured to reverse the posture of the body Wa.
  • the reversing mechanism 504d includes a motor and a rotation shaft rotated by the motor. The rotating shaft portion of the reversing mechanism 504d is connected to the suction hand 504c so that the suction hand 504c can be rotated around the rotation axis Ax.
  • the suction hand unit 504 is configured to invert the wafer structure Wa using an inversion mechanism 504d and supply the wafer structure Wa to the dicing apparatus 1.
  • the suction hand section 504 inverts the wafer structure Wa, in which the sheet member W2 is on the upper side and the wafer W1 is arranged on the lower side, by using the reversing mechanism 504d, so that the suction hand part 504 picks up the wafer with the sheet member W2 on the lower side.
  • the dicing apparatus 1 is configured to supply the wafer structure Wa with W1 disposed on the upper side to the dicing apparatus 1.
  • the suction hand section 504 inverts the wafer structure Wa by the inversion mechanism 504d and places the wafer structure Wa in the temporary storage section 506 before supplying it to the dicing apparatus 1. It is configured.
  • the temporary storage section 506 is a table on which the wafer structure Wa is temporarily placed before being supplied to the dicing apparatus 1.
  • the temporary storage section 506 is provided between the cassette section 202 and the dicing device 1.
  • a wafer structure Wa which will be diced next (on which a modified layer will be formed), is placed in the temporary storage section 506.
  • the temporary storage section 506 has a suction surface 506a on the upper surface.
  • the suction surface 506a is configured to suction and support the wafer structure Wa by generating negative pressure.
  • the suction surface 506a is provided with suction holes and the like for suctioning the wafer structure Wa using negative pressure.
  • the suction surface 506a has a circular shape with a diameter larger than the wafer structure Wa in a plan view, and is configured to be able to suction substantially the entire wafer structure Wa.
  • the imaging unit 507 is a camera that images the wafer W1 of the wafer structure Wa placed in the temporary storage unit 506. Based on the imaging result of the wafer W1 of the wafer structure Wa by the imaging unit 507, it is possible to obtain the displacement of the wafer W1 in the X and Y directions and the rotational displacement within the XY plane. Further, based on the deviation of the wafer W1 in the X and Y directions and the rotational deviation in the XY plane, after the wafer structure Wa is transferred to the chuck table section 12, the wafer structure Wa is The position of wafer W1 can be corrected.
  • the lift-up hand 503b of the lift-up hand section 503 is moved in the Y1 direction by the Y-direction moving mechanism 503a, and is moved into the cassette section 202. Then, the lift-up hand 503b suctions and supports the wafer structure Wa in the cassette section 202 from the Z2 direction side. Then, the lift-up hand 503b is moved in the Y2 direction by the Y direction moving mechanism 503a and moved out of the cassette section 202 while sucking and supporting the wafer structure Wa from the Z2 direction side.
  • the wafer structure Wa (hereinafter referred to as the wafer structure Wa in the first state) in which the sheet member W2a is placed on the upper side and the wafer W1 is placed on the lower side is taken out from the cassette part 202 by the lift-up hand part 503.
  • the suction hand 505b of the suction hand section 505 is moved in the Z2 direction by the Z direction moving mechanism 505a.
  • the wafer structure Wa in the first state is sucked and supported by the suction hand section 505, and the suction from the lift-up hand section 503 is released, so that the wafer structure Wa in the first state is moved from the lift-up hand section 503 to the suction hand section 505. will be handed over to.
  • the suction hand 505b of the suction hand section 505 is moved in the Z1 direction by the Z direction moving mechanism 505a.
  • the suction hand 504c of the suction hand section 504 is moved in the X1 direction by the X direction moving mechanism 504a to a position below the suction hand 505b of the suction hand section 505.
  • the suction surface of the suction hand 504c of the suction hand section 504 is in a state facing toward the Z1 direction side (suction hand 505b side).
  • the suction hand 505b of the suction hand section 505 is moved in the Z2 direction by the Z direction moving mechanism 505a.
  • the wafer structure Wa in the first state is attracted and supported by the suction hand section 504, and the suction from the suction hand section 505 is released, so that the wafer structure Wa in the first state is received by the suction hand section 504 from the suction hand section 505. passed on.
  • the wafer structure Wa in the first state is reversed by the reversing mechanism 504d.
  • the wafer structure Wa in which the sheet member W2a is disposed on the lower side and the wafer W1 is disposed on the upper side (hereinafter referred to as the wafer structure Wa in the second state) is supplied to the dicing apparatus 1 by the suction hand section 504.
  • the wafer structure Wa in the second state is placed on the suction surface 506a of the temporary storage section 506 by the suction hand section 504 before being supplied to the dicing apparatus 1.
  • the suction hand 504c of the suction hand section 504 is moved in the X2 direction by the X direction moving mechanism 504a to a position above the suction surface 506a of the temporary placement section 506. Then, the suction hand 504c of the suction hand section 504 is moved in the Z2 direction by the Z direction moving mechanism 504b. Then, the wafer structure Wa in the second state is attracted and supported by the temporary storage section 506, and the suction from the suction hand section 504 is released, so that the wafer structure Wa in the second state is received from the suction hand section 504 onto the temporary storage section 506. passed on. In addition, in the dicing apparatus 1, dicing (formation of a modified layer) is performed on the wafer structure Wa supplied to the dicing apparatus 1 before the wafer structure Wa placed in the temporary storage section 506. .
  • the wafer W1 of the wafer structure Wa in the second state is imaged by the imaging unit 507 while being placed in the temporary storage unit 506. Then, based on the results of imaging of wafer W1 by imaging unit 507, deviations of wafer W1 in the X and Y directions and rotational deviation within the XY plane are obtained.
  • the wafer structure Wa for which dicing has been completed is transferred from the dicing apparatus 1 to the cassette section 202.
  • the procedure for transporting the wafer structure Wa from the dicing apparatus 1 to the cassette section 202 is approximately the opposite procedure to the procedure for transporting the wafer structure Wa from the cassette section 202 to the dicing apparatus 1.
  • the wafer structure Wa in the second state is transferred from the chuck table section 12 of the dicing apparatus 1 to the suction hand section 504.
  • the suction surface of the suction hand 504c of the suction hand section 504 is in a state facing toward the Z2 direction side (the chuck table section 12 side).
  • the suction hand section 504 is moved in the X1 direction by the X direction moving mechanism 504a to a position below the suction hand section 505.
  • the wafer structure Wa in the second state is reversed by the reversing mechanism 504d.
  • the wafer structure Wa in the first state with the sheet member W2a on the upper side and the wafer W1 on the lower side is transferred from the suction hand section 504 to the lift-up hand section 503 via the suction hand section 505. .
  • the lift-up hand 503b of the lift-up hand section 503 is moved in the Y1 direction by the Y-direction moving mechanism 503a, and is moved into the cassette section 202.
  • the wafer structure Wa in the first state is transferred from the lift-up hand section 503 to the cassette section 202 and accommodated in the cassette section 202.
  • the suction hand 504c of the suction hand section 504 in the empty state that is not suctioning the wafer structure Wa is moved to The wafer structure Wa is moved in the X2 direction by the direction movement mechanism 504a to a position above the wafer structure Wa placed in the temporary storage section 506.
  • the suction surface of the suction hand 504c of the suction hand section 504 is in a state facing toward the Z2 direction side (temporary placement section 506 side).
  • the suction hand 504c of the suction hand section 504 is moved in the Z2 direction by the Z direction movement mechanism 504b.
  • the wafer structure Wa in the second state is sucked and supported by the suction hand section 504, and the suction from the temporary placement section 506 is released, so that the wafer structure Wa is received from the temporary placement section 506 by the suction hand section 504. passed on.
  • the suction hand 504c of the suction hand section 504 is moved in the Z1 direction by the Z direction movement mechanism 504b, and is also moved in the X2 direction by the X direction movement mechanism 504a to a position above the chuck table section 12. be done. Then, the suction hand 504c of the suction hand section 504 is moved in the Z2 direction by the Z direction movement mechanism 504b. Then, the wafer structure Wa in the second state is supported by the chuck table section 12 and is transferred from the suction hand section 504 to the chuck table section 12 by releasing the suction from the suction hand section 504.
  • a modified layer is formed by irradiating the wafer structure Wa in the second state with laser light from the laser unit 13.
  • the wafer W1 is irradiated with laser light from the laser unit 13 from the side opposite to the circuit layer W11. Therefore, as in the first embodiment, it is possible to avoid the width of the laser beam not being within the width of the street. In this way, the wafer W1 is supplied to the dicing apparatus 1 in an attitude suitable for dicing.
  • the other configurations of the third embodiment are the same as those of the first embodiment.
  • the suction hand section 504 is configured to include the inversion mechanism 504d that inverts the attitude of the wafer structure Wa.
  • the wafer structure Wa can be reversed by the reversing mechanism 504d while suppressing the structure from becoming complicated.
  • the cassette section 202 accommodates the wafer structure Wa in which the ring-shaped member surrounding the wafer W1 is not provided, and the wafer W1 transport section is operated by the reversing mechanism 504d.
  • the device is configured to invert the wafer structure Wa and supply the wafer structure Wa to the dicing apparatus 1.
  • the wafer W1 may not be supplied in an attitude suitable for dicing.
  • the wafer structure Wa can be inverted by the inversion mechanism 504d. Since the wafer W1 can be placed in a posture suitable for dicing, dicing can be performed appropriately.
  • the semiconductor wafer processing apparatus 400 includes a temporary storage part 506 that is provided between the cassette part 202 and the dicing apparatus 1 and in which the wafer structure Wa can be placed.
  • the suction hand section 504 is configured to invert the wafer structure Wa using a reversing mechanism 504d and place the wafer structure Wa on a temporary storage section 506 before supplying the wafer structure Wa to the dicing apparatus 1.
  • the next wafer W1 can be prepared in an inverted state in the temporary holding section 506, so that the next wafer W1 can be quickly supplied to the dicing apparatus 1.
  • other effects of the third embodiment are similar to those of the first embodiment.
  • FIGS. 26 and 27 The configuration of a semiconductor wafer processing apparatus 600 according to the fourth embodiment will be described with reference to FIGS. 26 and 27.
  • the lift-up hand section 703 is provided with a reversing mechanism 703d. Note that in the fourth embodiment, detailed explanations of the same configurations as those in the first, second, or third embodiments will be omitted.
  • the semiconductor wafer processing apparatus 600 is an example of a "wafer processing apparatus" in the claims.
  • the lift-up hand section 703 is an example of a "wafer transfer section” and an "unloading transfer section" in the claims.
  • a semiconductor wafer processing apparatus 600 is an apparatus that processes a wafer W1 provided in a wafer ring structure W. As shown in FIGS. 26 and 27, a semiconductor wafer processing apparatus 600 is an apparatus that processes a wafer W1 provided in a wafer ring structure W. As shown in FIGS. 26 and 27, a semiconductor wafer processing apparatus 600 is an apparatus that processes a wafer W1 provided in a wafer ring structure W. As shown in FIGS.
  • the semiconductor wafer processing device 600 includes a dicing device 601 and a wafer feeding device 603.
  • the vertical direction is defined as the Z direction
  • the upward direction is defined as the Z1 direction
  • the downward direction is defined as the Z2 direction.
  • the direction in which the dicing device 601 and the wafer supply device 603 are lined up is the X direction
  • the wafer supply device 603 side in the X direction is the X2 direction
  • the dicing device 601 side in the X direction is the X1 direction. direction.
  • the direction perpendicular to the X direction in the horizontal direction is the Y direction
  • one side of the Y direction is the Y1 direction
  • the other side of the Y direction is the Y2 direction.
  • the dicing device 601 is an example of a "dicing section" in the claims.
  • the dicing apparatus 601 is configured to form a modified layer by irradiating the wafer W1 with a laser beam having a transparent wavelength along the dividing lines (streets).
  • the dicing device 601 includes a base 11, a chuck table section 12, a laser section 13, an imaging section 14, and a lift-up hand section 703.
  • the wafer supply device 603 is configured to supply the wafer W1 (wafer ring structure W).
  • the wafer supply device 603 includes a cassette section 202.
  • the cassette section 202 is configured to be able to accommodate a plurality of wafer ring structures W.
  • the wafer ring structure W is housed in the cassette section 202 such that the sheet member W2 is on the bottom, the wafer W1 is on the top, and the circuit layer W11 is on the top.
  • the cassette section 202 includes a wafer cassette 202a, a Z-direction moving mechanism 202b, and a pair of mounting sections 202c.
  • the lift-up hand section 703 is configured to be able to take out the wafer ring structure W from the cassette section 202 and transport the taken out wafer ring structure W. Further, the lift-up hand section 703 is configured to be able to accommodate the wafer ring structure W in the cassette section 202. The lift-up hand section 703 is configured to transport the wafer ring structure W between the cassette section 202 and the dicing device 601.
  • the lift-up hand section 703 includes an X-direction movement mechanism 703a, a Z-direction movement mechanism 703b, and a lift-up hand 703c.
  • the X-direction moving mechanism 703a is configured to move the lift-up hand 703c in the X-direction.
  • the Z direction moving mechanism 703b is configured to move the lift-up hand 703c in the Z direction.
  • the X-direction movement mechanism 703a and the Z-direction movement mechanism 703b have, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.
  • the lift-up hand 703c is configured to attract and support the ring-shaped member W3 of the wafer ring structure W from the Z2 direction side by generating negative pressure.
  • the lift-up hand 703c is provided with a suction hole or the like for suctioning the wafer ring structure W using negative pressure.
  • the lift-up hand section 703 includes an inversion mechanism 703d that inverts the attitude of the wafer ring structure W. Further, in the fourth embodiment, the reversing mechanism 703d is provided in the lift-up hand section 703. Further, in the fourth embodiment, the reversing mechanism 703d rotates the lift-up hand 703c of the lift-up hand section 703 that has attracted the wafer ring structure W around the rotation axis Ax extending in the horizontal direction (Y direction). , is configured to invert the attitude of the wafer ring structure W.
  • the reversing mechanism 703d includes a motor and a rotating shaft portion rotated by the motor.
  • the rotating shaft portion of the reversing mechanism 703d is connected to the lift-up hand 703c so that the lift-up hand 703c can be rotated around the rotation axis Ax. Further, the lift-up hand 703c is configured to be rotated around the rotation axis Ax by the reversing mechanism 703d so as to be moved from one side to the other side with respect to the rotation axis Ax.
  • the lift-up hand section 703 is configured to invert the wafer ring structure W using an inversion mechanism 703d and supply the wafer ring structure W to the dicing device 601. Specifically, the lift-up hand section 703 uses a reversing mechanism 703d to invert the wafer ring structure W in which the sheet member W2 is on the lower side and the wafer W1 is on the upper side, so that the sheet member W2 is on the upper side.
  • the dicing apparatus 601 is configured to supply the wafer ring structure W, on which the wafer W1 is disposed on the lower side, to the dicing apparatus 601.
  • the lift-up hand 703c of the lift-up hand section 703 is moved in the X2 direction by the X-direction moving mechanism 703a, and is moved into the cassette section 202. Then, the lift-up hand 703c attracts and supports the wafer ring structure W in the cassette portion 202 from the Z2 direction side. Then, the lift-up hand 703c is moved in the X1 direction by the X direction moving mechanism 703a and moved out of the cassette section 202, with the wafer ring structure W being attracted and supported from the Z2 direction side.
  • the wafer ring structure W (hereinafter referred to as the wafer ring structure W in the first state) with the sheet member W2 on the lower side and the wafer W1 on the ware side is lifted from the cassette section 202 by the lift-up hand section 703. taken out.
  • the wafer ring structure W in the first state is reversed by the reversing mechanism 703d.
  • the wafer ring structure W (hereinafter referred to as the wafer ring structure W in the second state) in which the sheet member W2 is placed on the upper side and the wafer W1 is placed on the lower side is placed on the chuck table part 12 by the lift-up hand part 703.
  • the lift-up hand 703c of the lift-up hand section 703 and the chuck table section 12 are moved in the X direction, and the lift-up hand 703c is moved to a position above the chuck table section 12.
  • the lift-up hand 703c is moved in the Z2 direction by the Z direction moving mechanism 703b.
  • the wafer ring structure W in the second state is transferred from the lift-up hand section 703 to the chuck table section 12.
  • a modified layer is formed by irradiating the wafer ring structure W in the second state with laser light from the laser unit 13.
  • the wafer W1 is irradiated with laser light from the laser section 13 from the side opposite to the circuit layer W11 via the sheet member W2. Therefore, as in the first embodiment, it is possible to avoid the width of the laser beam not being within the width of the street. In this way, the wafer W1 is supplied to the dicing apparatus 601 in an attitude suitable for dicing.
  • the wafer ring structure W for which the dicing has been completed is transported from the chuck table section 12 to the cassette section 202.
  • the procedure for transporting the wafer ring structure W from the chuck table section 12 to the cassette section 202 is approximately the opposite procedure to the procedure for transporting the wafer ring structure W from the cassette section 202 to the chuck table section 12.
  • the wafer structure Wa in the second state is transferred from the chuck table section 12 to the lift-up hand section 703. Then, the lift-up hand 703c of the lift-up hand section 703 is moved in the X2 direction by the X-direction moving mechanism 703a. During this movement, the wafer ring structure W in the second state is reversed by the reversing mechanism 703d. Then, the wafer ring structure W is in a first state in which the sheet member W2a is disposed on the lower side and the wafer W1 is disposed on the upper side.
  • the lift-up hand 703c of the lift-up hand section 703 is moved in the Y1 direction by the X-direction moving mechanism 703a, and is moved into the cassette section 202. Then, the wafer structure Wa in the first state is transferred from the lift-up hand section 703 to the cassette section 202 and accommodated in the cassette section 202. Note that the other configurations of the fourth embodiment are similar to those of the first embodiment.
  • the lift-up hand section 703 is configured to include an inversion mechanism 703d that inverts the attitude of the wafer ring structure W.
  • the wafer ring structure W can be reversed by the reversing mechanism 703d while suppressing the structure from becoming complicated.
  • the cassette section 202 accommodates the wafer ring structure W provided with the ring-shaped member W3 surrounding the wafer W1, and the lift-up hand section 703
  • the wafer ring structure W is inverted by the inversion mechanism 703d, and the wafer ring structure W is supplied to the dicing apparatus 601.
  • the wafer W1 may not be supplied in an attitude suitable for dicing.
  • the reversing mechanism 703d allows the wafer ring structure W to be Since the wafer W1 can be placed in a posture suitable for dicing by inverting the wafer W1, dicing can be performed appropriately.
  • the wafer transfer section includes a lift-up hand section 703 that takes out the wafer ring structure W from the cassette section 202 and transfers the taken out wafer ring structure W, and includes a reversing mechanism. 703d is provided in the lift-up hand section 703. Thereby, using the lift-up hand section 703, it is possible to easily take out the wafer ring structure W from the cassette section 202 and transport the taken out wafer ring structure W. Note that other effects of the fourth embodiment are similar to those of the first embodiment.
  • the reversing mechanism 703d moves the lift-up hand 703c of the lift-up hand section 703 that has attracted the wafer ring structure W in the horizontal direction (X direction).
  • the posture of the wafer ring structure W is reversed by rotating it around a rotation axis Ax extending in the wafer ring structure W.
  • the reversing mechanism 703d includes a motor and a rotating shaft portion rotated by the motor.
  • the rotating shaft portion of the reversing mechanism 703d is connected to the lift-up hand 703c so that the lift-up hand 703c can be rotated around the rotation axis Ax.
  • the lift-up hand 703c is configured to be rotated on the spot around the rotation axis Ax by a reversing mechanism 703d.
  • the inversion of the wafer ring structure W in the modified example of the fourth embodiment is the same as in the fourth embodiment, so a detailed explanation will be omitted. It is taken out from the cassette section 202 by the section 703. Then, while being transported to the chuck table section 12, the wafer ring structure W in the first state is reversed by the reversing mechanism 703d. Then, the wafer ring structure W in the second state is supplied to the chuck table section 12 by the lift-up hand section 703. Note that the subsequent operation is similar to that of the fourth embodiment. Further, the other configurations of the modified example of the fourth embodiment are the same as those of the fourth embodiment described above.
  • the wafer transfer unit includes a suction hand that suctions and supports a wafer structure, and the reversing mechanism reverses the suction hand that has suctioned the wafer structure.
  • the wafer transfer section may include a support section other than the suction section that supports the wafer structure, and the reversing mechanism may invert the support section that supported the wafer structure.
  • the semiconductor wafer processing apparatus includes a temporary storage section, but the present invention is not limited to this.
  • the wafer processing apparatus does not need to be provided with a temporary holding section.
  • the wafer structure may be reversed by a reversing mechanism and directly supplied to the dicing section.
  • the semiconductor wafer processing apparatus includes an imaging section that images the wafer of the wafer structure placed in the temporary storage section, but the present invention is not limited to this. In the present invention, even when the semiconductor wafer processing apparatus includes the temporary storage section, the semiconductor wafer processing apparatus does not need to include the imaging section that images the wafer of the wafer structure placed in the temporary storage section.
  • the semiconductor wafer processing apparatus includes an ultraviolet irradiation section and a squeegee section, but the present invention is not limited to this.
  • the semiconductor wafer processing apparatus even when the semiconductor wafer processing apparatus includes the expanding section, the semiconductor wafer processing apparatus does not need to include the ultraviolet irradiation section and the squeegee section.
  • the wafer transport section inverts the wafer structure using the inversion mechanism and transfers the wafer structure to the cold air supply section, but the present invention is not limited to this.
  • the wafer transport section may invert the wafer structure using a reversing mechanism and deliver the wafer structure to a receiving section other than the cold air supply section.
  • control processing was explained using a flow-driven flowchart in which processing is performed in order along the processing flow.
  • control processing may be performed by event-driven processing that executes processing on an event-by-event basis. In this case, it may be completely event-driven, or it may be a combination of event-driven and flow-driven.
  • 1,601 Dicing device (dicing section) 100, 300, 400, 600 Semiconductor wafer processing equipment (wafer processing equipment) 200, 302a Expanding main body part (expanding part) 202 Cassette section (wafer storage section) 203 Lift-up hand section (wafer transfer section, unloading section) 204, 504 Suction hand section (wafer transfer section, suction section, transfer mechanism section) 204d, 504d, 703d Reversing mechanism 206 Cold air supply section (cooling section) 506 Temporary storage section 703 Lift-up hand section (wafer transfer section, adsorption section, take-out transfer section) Ax Rotation axis Ch Semiconductor chip W Wafer ring structure (wafer structure) Wa Wafer structure W1 Wafer W2, W2a Sheet member W3 Ring-shaped member

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Engineering & Computer Science (AREA)
  • Robotics (AREA)
  • Dicing (AREA)
PCT/JP2022/019154 2022-04-27 2022-04-27 ウエハ加工装置、半導体チップの製造方法および半導体チップ Ceased WO2023209891A1 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
PCT/JP2022/019154 WO2023209891A1 (ja) 2022-04-27 2022-04-27 ウエハ加工装置、半導体チップの製造方法および半導体チップ
US18/855,543 US20250336705A1 (en) 2022-04-27 2023-02-03 Wafer processing apparatus, semiconductor chip manufacturing method, and semiconductor chip
DE112023001376.4T DE112023001376T5 (de) 2022-04-27 2023-02-03 Wafer-Bearbeitungsvorrichtung, Halbleiterchip-Herstellungsverfahren und Halbleiterchip
CN202380035550.4A CN119013766A (zh) 2022-04-27 2023-02-03 晶圆加工装置、半导体芯片的制造方法和半导体芯片
PCT/JP2023/003613 WO2023210089A1 (ja) 2022-04-27 2023-02-03 ウエハ加工装置、半導体チップの製造方法および半導体チップ
JP2024517844A JP7821876B2 (ja) 2022-04-27 2023-02-03 ウエハ加工装置および半導体チップの製造方法
KR1020247030915A KR20240151811A (ko) 2022-04-27 2023-02-03 웨이퍼 가공 장치, 반도체 칩의 제조 방법 및 반도체 칩
TW112114669A TWI869826B (zh) 2022-04-27 2023-04-20 晶圓加工裝置、半導體晶片之製造方法及半導體晶片

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Citations (4)

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JP2011211119A (ja) * 2010-03-30 2011-10-20 Fuji Electric Co Ltd ウェハ搬送装置およびウェハ搬送方法
JP2014007257A (ja) * 2012-06-22 2014-01-16 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2018181921A (ja) * 2017-04-05 2018-11-15 株式会社ディスコ 分割装置
WO2019188518A1 (ja) * 2018-03-30 2019-10-03 東京エレクトロン株式会社 レーザー加工装置、およびレーザー加工方法

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JPH0333110Y2 (https=) * 1987-03-12 1991-07-12
JP2016040203A (ja) * 2015-10-09 2016-03-24 三星ダイヤモンド工業株式会社 基板反転搬送装置
WO2018135492A1 (ja) 2017-01-23 2018-07-26 東京エレクトロン株式会社 半導体基板の処理方法及び半導体基板の処理装置
JP6912924B2 (ja) 2017-04-18 2021-08-04 株式会社ディスコ レーザー加工装置
CN211254290U (zh) 2019-09-09 2020-08-14 苏州河图电子科技有限公司 一种具有自动翻转功能的通用型电路板运输机构

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JP2011211119A (ja) * 2010-03-30 2011-10-20 Fuji Electric Co Ltd ウェハ搬送装置およびウェハ搬送方法
JP2014007257A (ja) * 2012-06-22 2014-01-16 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2018181921A (ja) * 2017-04-05 2018-11-15 株式会社ディスコ 分割装置
WO2019188518A1 (ja) * 2018-03-30 2019-10-03 東京エレクトロン株式会社 レーザー加工装置、およびレーザー加工方法

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JP7821876B2 (ja) 2026-02-27
TWI869826B (zh) 2025-01-11
WO2023210089A1 (ja) 2023-11-02
TW202347572A (zh) 2023-12-01
KR20240151811A (ko) 2024-10-18

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