TWI869826B - 晶圓加工裝置、半導體晶片之製造方法及半導體晶片 - Google Patents

晶圓加工裝置、半導體晶片之製造方法及半導體晶片 Download PDF

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Publication number
TWI869826B
TWI869826B TW112114669A TW112114669A TWI869826B TW I869826 B TWI869826 B TW I869826B TW 112114669 A TW112114669 A TW 112114669A TW 112114669 A TW112114669 A TW 112114669A TW I869826 B TWI869826 B TW I869826B
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TW
Taiwan
Prior art keywords
wafer
unit
section
conveying
ring structure
Prior art date
Application number
TW112114669A
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English (en)
Chinese (zh)
Other versions
TW202347572A (zh
Inventor
鈴木芳邦
Original Assignee
日商山葉發動機股份有限公司
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Application filed by 日商山葉發動機股份有限公司 filed Critical 日商山葉發動機股份有限公司
Publication of TW202347572A publication Critical patent/TW202347572A/zh
Application granted granted Critical
Publication of TWI869826B publication Critical patent/TWI869826B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3211—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H10P72/3402—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H10P72/3404—Storage means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/742—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Engineering & Computer Science (AREA)
  • Robotics (AREA)
  • Dicing (AREA)
TW112114669A 2022-04-27 2023-04-20 晶圓加工裝置、半導體晶片之製造方法及半導體晶片 TWI869826B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
PCT/JP2022/019154 WO2023209891A1 (ja) 2022-04-27 2022-04-27 ウエハ加工装置、半導体チップの製造方法および半導体チップ
WOPCT/JP2022/019154 2022-04-27
WOPCT/JP2023/003613 2023-02-03
PCT/JP2023/003613 WO2023210089A1 (ja) 2022-04-27 2023-02-03 ウエハ加工装置、半導体チップの製造方法および半導体チップ

Publications (2)

Publication Number Publication Date
TW202347572A TW202347572A (zh) 2023-12-01
TWI869826B true TWI869826B (zh) 2025-01-11

Family

ID=88518315

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112114669A TWI869826B (zh) 2022-04-27 2023-04-20 晶圓加工裝置、半導體晶片之製造方法及半導體晶片

Country Status (7)

Country Link
US (1) US20250336705A1 (https=)
JP (1) JP7821876B2 (https=)
KR (1) KR20240151811A (https=)
CN (1) CN119013766A (https=)
DE (1) DE112023001376T5 (https=)
TW (1) TWI869826B (https=)
WO (2) WO2023209891A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011211119A (ja) * 2010-03-30 2011-10-20 Fuji Electric Co Ltd ウェハ搬送装置およびウェハ搬送方法
JP2014007257A (ja) * 2012-06-22 2014-01-16 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2018181921A (ja) * 2017-04-05 2018-11-15 株式会社ディスコ 分割装置
WO2019188518A1 (ja) * 2018-03-30 2019-10-03 東京エレクトロン株式会社 レーザー加工装置、およびレーザー加工方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0333110Y2 (https=) * 1987-03-12 1991-07-12
JP2016040203A (ja) * 2015-10-09 2016-03-24 三星ダイヤモンド工業株式会社 基板反転搬送装置
WO2018135492A1 (ja) 2017-01-23 2018-07-26 東京エレクトロン株式会社 半導体基板の処理方法及び半導体基板の処理装置
JP6912924B2 (ja) 2017-04-18 2021-08-04 株式会社ディスコ レーザー加工装置
CN211254290U (zh) 2019-09-09 2020-08-14 苏州河图电子科技有限公司 一种具有自动翻转功能的通用型电路板运输机构

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011211119A (ja) * 2010-03-30 2011-10-20 Fuji Electric Co Ltd ウェハ搬送装置およびウェハ搬送方法
JP2014007257A (ja) * 2012-06-22 2014-01-16 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2018181921A (ja) * 2017-04-05 2018-11-15 株式会社ディスコ 分割装置
WO2019188518A1 (ja) * 2018-03-30 2019-10-03 東京エレクトロン株式会社 レーザー加工装置、およびレーザー加工方法

Also Published As

Publication number Publication date
JPWO2023210089A1 (https=) 2023-11-02
CN119013766A (zh) 2024-11-22
DE112023001376T5 (de) 2024-12-24
US20250336705A1 (en) 2025-10-30
JP7821876B2 (ja) 2026-02-27
WO2023209891A1 (ja) 2023-11-02
WO2023210089A1 (ja) 2023-11-02
TW202347572A (zh) 2023-12-01
KR20240151811A (ko) 2024-10-18

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