WO2023181957A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2023181957A1
WO2023181957A1 PCT/JP2023/008997 JP2023008997W WO2023181957A1 WO 2023181957 A1 WO2023181957 A1 WO 2023181957A1 JP 2023008997 W JP2023008997 W JP 2023008997W WO 2023181957 A1 WO2023181957 A1 WO 2023181957A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
protrusion
lead
recess
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/008997
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English (en)
French (fr)
Japanese (ja)
Inventor
弘匡 河野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
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Rohm Co Ltd
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Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2024509979A priority Critical patent/JPWO2023181957A1/ja
Publication of WO2023181957A1 publication Critical patent/WO2023181957A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

Definitions

  • the present disclosure relates to a semiconductor device.
  • Patent Document 1 discloses an example of a semiconductor device (power module) in which a plurality of semiconductor elements are bonded to a conductor layer.
  • the semiconductor device includes a plurality of connection metal members (conducting members) joined to a conductor layer and a plurality of semiconductor elements. This allows a larger current to flow through the plurality of semiconductor elements.
  • any of the plurality of connecting metal members may rotate relative to the electrode of the semiconductor element to be bonded.
  • the connecting metal member rotates, shear stress is generated at the interface between the electrode of the semiconductor element and the connecting metal member.
  • the shear stress increases.
  • the shear stress concentrates on the semiconductor element, which may cause problems such as cracks in the semiconductor element.
  • An object of the present disclosure is to provide a semiconductor device that is improved over the conventional semiconductor device. Particularly, in view of the above circumstances, one object of the present disclosure is to provide a semiconductor device that can suppress rotation of a conductive member with respect to a semiconductor element during manufacturing of the device.
  • a semiconductor device provided by one aspect of the present disclosure includes a semiconductor element, a first lead separated from the semiconductor element, a conductive member that connects the semiconductor element and the first lead, and a conductive member that connects the semiconductor element and the first lead. and a first bonding layer that electrically connects the conductive member.
  • the first lead has a bonding surface facing in a first direction and a recessed portion recessed from the bonding surface.
  • the conductive member includes a first joint portion facing the joint surface, and a first protrusion protruding from the first joint portion. At least a portion of the first bonding layer is accommodated in the recess, and when viewed in the first direction, the first protrusion overlaps the first bonding layer accommodated in the recess.
  • FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present disclosure, through which a sealing resin is seen.
  • FIG. 2 is a plan view corresponding to FIG. 1, and further shows the conductive member, the first bonding layer, and the second bonding layer.
  • FIG. 3 is a bottom view of the semiconductor device shown in FIG. 1.
  • 4 is a right side view of the semiconductor device shown in FIG. 1.
  • FIG. 5 is a rear view of the semiconductor device shown in FIG. 1.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
  • FIG. 7 is a cross-sectional view taken along line VII-VII in FIG.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG.
  • FIG. 9 is a partially enlarged view of FIG. 6.
  • FIG. 10 is a perspective view of a conductive member included in the semiconductor device shown in FIG.
  • FIG. 11 is a partially enlarged view of FIG. 1.
  • FIG. 12 is a sectional view taken along line XII-XII in FIG. 11.
  • FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 11.
  • FIG. 14 is a sectional view taken along line XIV-XIV in FIG. 11.
  • FIG. 15 is a partially enlarged sectional view of a modification of the semiconductor device shown in FIG.
  • FIG. 16 is a partially enlarged plan view of the semiconductor device according to the second embodiment of the present disclosure, through which the sealing resin is seen.
  • FIG. 10 is a perspective view of a conductive member included in the semiconductor device shown in FIG.
  • FIG. 11 is a partially enlarged view of FIG. 1.
  • FIG. 12 is a sectional view taken along line XII-XI
  • FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 16.
  • FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. 16.
  • FIG. 19 is a partially enlarged plan view of a semiconductor device according to a third embodiment of the present disclosure, through which the sealing resin is seen.
  • FIG. 20 is a cross-sectional view taken along line XX-XX in FIG. 19.
  • FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 19.
  • a semiconductor device A10 according to a first embodiment of the present disclosure will be described based on FIGS. 1 to 14.
  • the semiconductor device A10 is used in electronic equipment including a power conversion circuit, such as a DC-DC converter.
  • the semiconductor device A10 includes a semiconductor element 10, a conductive member 30, a first lead 21, a second lead 22, a die pad 23, a conductive bonding layer 29, a first bonding layer 61, a second bonding layer 62, a wire 40, and a sealing resin 50. Equipped with Here, in FIG. 1, for convenience of understanding, the sealing resin 50 is shown.
  • FIG. 2 further shows the conductive member 30, the first bonding layer 61, and the second bonding layer 62 compared to FIG.
  • the transparent sealing resin 50 is shown by an imaginary line (two-dot chain line).
  • the transparent conductive member 30 is shown with imaginary lines.
  • first direction z An example of a direction perpendicular to the first direction z is referred to as a "second direction x.”
  • second direction x An example of a direction perpendicular to the first direction z and the second direction x is referred to as a "third direction y.”
  • the semiconductor element 10 is mounted on the die pad 23, as shown in FIGS. 1, 2, 6, and 7.
  • the semiconductor element 10 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).
  • the semiconductor element 10 may be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a diode.
  • the semiconductor element 10 is an n-channel type MOSFET with a vertical structure.
  • Semiconductor element 10 includes a compound semiconductor substrate.
  • the composition of the compound semiconductor substrate includes silicon carbide (SiC).
  • the semiconductor element 10 has a first electrode 11, a second electrode 12, and a gate electrode 13.
  • the first electrode 11 is located on one side in the first direction z. A current corresponding to the power converted by the semiconductor element 10 flows through the first electrode 11 . That is, the first electrode 11 corresponds to the source electrode of the semiconductor element 10.
  • the first electrode 11 includes multiple metal plating layers.
  • the first electrode 11 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer.
  • the first electrode 11 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer. .
  • the second electrode 12 is located on the opposite side to the first electrode 11 in the first direction z, and faces the die pad 23. A current corresponding to the power before being converted by the semiconductor element 10 flows through the second electrode 12 . That is, the second electrode 12 corresponds to the drain electrode of the semiconductor element 10.
  • the gate electrode 13 is located on the same side as the first electrode 11 in the first direction z.
  • a gate voltage for driving the semiconductor element 10 is applied to the gate electrode 13 .
  • the area of the gate electrode 13 is smaller than the area of the first electrode 11 when viewed in the first direction z.
  • the first lead 21, the second lead 22, and the die pad 23 are constructed from the same lead frame.
  • the lead frame is made of copper (Cu) or a copper alloy. Therefore, the compositions of the first lead 21, the second lead 22, and the die pad 23 include copper.
  • the first lead 21 is located on one side in the third direction y, as shown in FIGS. 1 and 2.
  • the first lead 21 is electrically connected to the first electrode 11 of the semiconductor element 10 via the conductive member 30. Therefore, the first lead 21 forms a source terminal of the semiconductor device A10.
  • the first lead 21 has a first bonding surface 211, a first mounting surface 212, a plurality of first end surfaces 213, a first thin part 214, and a recess 215.
  • the first joint surface 211 faces the side facing the conductive member 30 in the first direction z.
  • a plating layer containing nickel, silver (Ag), or the like in its composition may be provided on the first bonding surface 211.
  • the first mounting surface 212 faces the opposite side from the first bonding surface 211 in the first direction z.
  • a plating layer containing tin (Sn) or the like may be provided on the first mounting surface 212 exposed from the sealing resin 50.
  • the plurality of first end surfaces 213 face the side opposite to the side where the semiconductor element 10 is located in the third direction y.
  • the plurality of first end surfaces 213 are connected to the first bonding surface 211 and the first mounting surface 212.
  • the plurality of first end surfaces 213 are arranged along the second direction x. As shown in FIG. 4, the plurality of first end surfaces 213 are exposed from the sealing resin 50.
  • the first thin portion 214 has an eave shape that extends from the first mounting surface 212 in a direction perpendicular to the first direction z when viewed in the first direction z. .
  • a portion of the first joint surface 211 is included in the second thin portion 224.
  • the first thin portion 214 includes an intermediate surface 214A and an exposed surface 214B. As shown in FIGS. 6 and 8, the intermediate surface 214A faces opposite to the first bonding surface 211 in the first direction z. The intermediate surface 214A is located between the first bonding surface 211 and the first mounting surface 212 in the first direction z. The intermediate surface 214A is in contact with the sealing resin 50. The exposed surface 214B is connected to the first joint surface 211 and the intermediate surface 214A, and faces the second direction x. The exposed surface 214B is exposed from the sealing resin 50. The area of the exposed surface 214B is smaller than the area of each of the plurality of first end surfaces 213.
  • the recess 215 is recessed from the first joint surface 211. As shown in FIG. 11, the recess 215 extends in the second direction x. As shown in FIGS. 12 to 14, the recess 215 is defined by an inner peripheral surface 215A. The inner peripheral surface 215A is connected to the first joint surface 211. As shown in FIGS. 12 and 13, the inner circumferential surface 215A has a semicircular arc shape in a cross section whose in-plane directions are the first direction z and the third direction y. The recess 215 is formed, for example, by press working.
  • the second lead 22 is located away from the first lead 21 in the second direction x, as shown in FIGS. 1 and 2.
  • the second lead 22 is electrically connected to the gate electrode 13 of the semiconductor element 10 . Therefore, the second lead 22 forms the gate terminal of the semiconductor device A10.
  • the second lead 22 has a second bonding surface 221, a second mounting surface 222, a second end surface 223, and a second thin portion 224.
  • the second bonding surface 221 faces the same side as the first bonding surface 211 of the first lead 21 in the first direction z.
  • the position of the second joint surface 221 in the first direction z is equal to the position of the first joint surface 211 of the first lead 21 in the first direction z.
  • a plating layer containing nickel, silver, or the like in its composition may be provided on the second bonding surface 221.
  • the second mounting surface 222 faces the opposite side from the second bonding surface 221 in the first direction z. As shown in FIG. 3, the second mounting surface 222 is exposed from the sealing resin 50.
  • a plating layer containing tin or the like may be provided on the first mounting surface 212.
  • the second end surface 223 faces the same side as the plurality of first end surfaces 213 of the first lead 21 in the third direction y.
  • the second end surface 223 is connected to the second bonding surface 221 and the second mounting surface 222. As shown in FIG. 5, the second end surface 223 is exposed from the sealing resin 50.
  • the second thin portion 224 has an eave shape that extends from the second mounting surface 222 in a direction perpendicular to the first direction z when viewed in the first direction z.
  • a portion of the second joint surface 221 is included in the second thin portion 224 .
  • the second thin portion 224 includes an intermediate surface 224A and an exposed surface 224B.
  • the intermediate surface 224A faces the opposite side to the second bonding surface 221 in the first direction z.
  • the intermediate surface 224A is located between the second bonding surface 221 and the second mounting surface 222 in the first direction z.
  • the intermediate surface 224A is in contact with the sealing resin 50.
  • the exposed surface 224B is connected to the second joint surface 221 and the intermediate surface 224A, and faces in the second direction x.
  • the exposed surface 224B faces the opposite side of the exposed surface 214B of the first lead 21 in the second direction x.
  • the exposed surface 224B is exposed from the sealing resin 50.
  • the area of the exposed surface 224B is smaller than the area of the second end surface 223.
  • the die pad 23 is located away from the first lead 21 and the second lead 22 in the third direction y.
  • the die pad 23 is electrically connected to the second electrode 12 of the semiconductor element 10 . Therefore, the die pad 23 forms the drain terminal of the semiconductor device A10.
  • the die pad 23 has a mounting surface 231, a back surface 232, a plurality of third end surfaces 233, and a third thin portion 234.
  • the mounting surface 231 faces the same side as the first bonding surface 211 of the first lead 21 in the first direction z.
  • the position of the mounting surface 231 in the first direction z is equal to the position of the first joint surface 211 of the first lead 21 in the first direction z.
  • the semiconductor element 10 is mounted on the mounting surface 231.
  • a plating layer containing nickel, silver, or the like may be provided on the mounting surface 231.
  • the back surface 232 faces the side opposite to the side where the semiconductor element 10 is located in the first direction z. As shown in FIG. 3, the back surface 232 is exposed from the sealing resin 50. The back surface 232 overlaps the semiconductor element 10 when viewed in the first direction z.
  • a plating layer containing tin or the like may be provided on the back surface 232.
  • the plurality of third end surfaces 233 face opposite to the first end surface 213 of the first lead 21 in the third direction y.
  • the plurality of third end surfaces 233 are connected to the mounting surface 231 and the back surface 232.
  • the plurality of third end surfaces 233 are arranged along the second direction x. As shown in FIG. 6, the plurality of third end surfaces 233 are exposed from the sealing resin 50.
  • the third thin portion 234 has an eave shape that extends from the back surface 232 in a direction perpendicular to the first direction z when viewed in the first direction z.
  • a portion of the mounting surface 231 is included in the third thin portion 234 .
  • the third thin portion 234 includes an intermediate surface 234A and a pair of exposed surfaces 234B.
  • the intermediate surface 234A faces the opposite side to the mounting surface 231 in the first direction z.
  • the intermediate surface 234A is located between the mounting surface 231 and the back surface 232 in the first direction z.
  • the intermediate surface 234A is in contact with the sealing resin 50.
  • the pair of exposed surfaces 234B are connected to the mounting surface 231 and the intermediate surface 234A, and face opposite to each other in the second direction x.
  • the pair of exposed surfaces 234B are located apart from each other in the second direction x.
  • a pair of exposed surfaces 234B are exposed from the sealing resin 50.
  • the area of each of the pair of exposed surfaces 234B is smaller than the area of each of the plurality of third end surfaces 233.
  • the conductive bonding layer 29 is interposed between the mounting surface 231 of the die pad 23 and the second electrode 12 of the semiconductor element 10, as shown in FIG.
  • the conductive bonding layer 29 is in contact with the mounting surface 231 and the second electrode 12 .
  • the conductive bonding layer 29 conductively bonds the die pad 23 and the second electrode 12 together. Thereby, the die pad 23 is electrically connected to the second electrode 12.
  • the composition of the conductive bonding layer 29 includes tin.
  • the conductive bonding layer 29 is solder.
  • the conductive member 30 connects the first electrode 11 of the semiconductor element 10 and the first lead 21 to each other. Therefore, the conductive member 30 forms part of the conductive path of the semiconductor device A10.
  • the composition of the conductive member 30 includes copper.
  • the conductive member 30 is a metal clip. As shown in FIGS. 1 and 6, the conductive member 30 straddles between the first lead 21 and the die pad 23. As shown in FIGS. As shown in FIGS. 1 and 10, the conductive member 30 has a first joint 31, a second joint 32, an intermediate portion 33, a first protrusion 34, and a second protrusion 35.
  • the first joint portion 31 faces the first joint surface 211 of the first lead 21.
  • the first joint portion 31 stands up in the first direction z.
  • the first joint portion 31 has a facing surface 311 .
  • the opposing surface 311 faces the first bonding surface 211 .
  • the dimension B2 of the first joint 31 in the third direction y is larger than the dimension b of the recess 215 of the first lead 21 in the third direction y.
  • the second bonding portion 32 faces the semiconductor element 10. As shown in FIG. 1, the entire second joint portion 32 overlaps the mounting surface 231 of the die pad 23. As shown in FIG. 6, the second joint portion 32 has a main surface 321, a first inclined surface 322, and a second inclined surface 323. As shown in FIG. 9, the main surface 321 faces the side facing the first electrode 11 of the semiconductor element 10 in the first direction z.
  • the first inclined surface 322 is located between the main surface 321 and the first joint portion 31 in the third direction y.
  • the second inclined surface 323 is located on the opposite side of the first inclined surface 322 with respect to the main surface 321 in the third direction y.
  • the first inclined surface 322 and the second inclined surface 323 are connected to the main surface 321.
  • Each of the first inclined surface 322 and the second inclined surface 323 is inclined with respect to the main surface 321 on the side away from the semiconductor element 10 in the first direction z. As shown in FIG. 9, the first inclined surface 322 is inclined with respect to the main surface 321 at an inclination angle ⁇ .
  • the inclination angle ⁇ is 30° or more and 60° or less.
  • the intermediate portion 33 is located between the first joint portion 31 and the second joint portion 32 in the third direction y.
  • the intermediate part 33 connects the first joint part 31 and the second joint part 32.
  • the intermediate portion 33 straddles between the first lead 21 and the die pad 23 .
  • the first protrusion 34 protrudes from the first joint portion 31 in the second direction x.
  • the first protrusion 34 is located on the opposite side of the recess 215 with respect to the first bonding surface 211 of the first lead 21 in the first direction z.
  • the dimension B1 of the first protrusion 34 in the third direction y is smaller than the dimension B2 of the first joint 31 in the third direction y (see FIGS. 12 and 13).
  • the dimension b of the recess 215 in the third direction y is larger than the dimension B1 of the first protrusion 34 in the third direction y.
  • the first protrusion 34 has a pair of first surfaces 341 and second surfaces 342.
  • the pair of first surfaces 341 face opposite to each other in the third direction y.
  • the second surface 342 faces the recess 215 of the first lead 21 .
  • the second surface 342 is flush with the opposing surface 311 of the first joint portion 31.
  • the second protrusion 35 is located on the opposite side of the first protrusion 34 with respect to the first joint 31 in the second direction x.
  • the second protrusion 35 protrudes from the first joint portion 31 in the second direction x.
  • the first bonding layer 61 conductively bonds the first lead 21 and the first bonding portion 31 of the conductive member 30. As shown in FIGS. 6 and 8, at least a portion of the first bonding layer 61 is accommodated in the recess 215 of the first lead 21. As shown in FIGS. As shown in FIG. 11, when viewed in the first direction z, the first bonding portion 31, the first protrusion 34, and the second protrusion 35 of the conductive member 30 overlap the first bonding layer 61 accommodated in the recess 215.
  • the composition of the first bonding layer 61 includes tin.
  • the first bonding layer 61 is solder.
  • the first bonding layer 61 has a first portion 611 and a second portion 612.
  • the first portion 611 is accommodated in the recess 215 of the first lead 21 .
  • the first portion 611 is in contact with the inner peripheral surface 215A of the recess 215.
  • the second portion 612 is a portion protruding from the recess 215.
  • the second portion 612 is in contact with the first bonding surface 211 of the first lead 21 .
  • the second portion 612 is in contact with the pair of first surfaces 341 of the first protrusion 34 of the conductive member 30 and the second surface 342 of the first protrusion 34.
  • the second portion 612 includes a portion located between the first bonding surface 211 and the second surface 342 of the first lead 21 .
  • the second portion 612 is in contact with the opposing surface 311 of the first joint portion 31 of the conductive member 30.
  • the second portion 612 includes a portion located between the first bonding surface 211 and the opposing surface 311 of the first lead 21 .
  • the second bonding layer 62 conductively bonds the first electrode 11 of the semiconductor element 10 and the second bonding portion 32 of the conductive member 30. As shown in FIG. 9 , the second bonding layer 62 includes a portion located between the first electrode 11 and the main surface 321 of the second bonding portion 32 . The second bonding layer 62 is in contact with the main surface 321 and the first inclined surface 322 of the second bonding portion 32 .
  • the composition of the second bonding layer 62 includes tin.
  • the second bonding layer 62 is solder.
  • the wire 40 is conductively bonded to the gate electrode 13 of the semiconductor element 10 and the second bonding surface 221 of the second lead 22. Thereby, the second lead 22 is electrically connected to the gate electrode 13.
  • the composition of wire 40 includes gold.
  • the composition of the wire 40 may include aluminum (Al) or copper.
  • the sealing resin 50 covers the semiconductor element 10, the conductive member 30, the wire 40, and a portion of each of the first lead 21, the second lead 22, and the die pad 23. .
  • the sealing resin 50 has electrical insulation properties.
  • the sealing resin 50 is made of a material containing, for example, a black epoxy resin.
  • the sealing resin 50 has a top surface 51, a bottom surface 52, a pair of first side surfaces 53, and a pair of second side surfaces 54.
  • the top surface 51 faces the same side as the mounting surface 231 of the die pad 23 in the first direction z.
  • the bottom surface 52 faces opposite to the top surface 51 in the first direction z.
  • the first mounting surface 212 of the first lead 21, the second mounting surface 222 of the second lead 22, and the back surface 232 of the die pad 23 are exposed from the bottom surface 52.
  • the pair of first side surfaces 53 face oppositely to each other in the third direction y, and are located apart from each other in the third direction y.
  • a pair of first side surfaces 53 are connected to the top surface 51 and the bottom surface 52.
  • a plurality of first end surfaces 213 of the first leads 21 and second end surfaces 223 of the second leads 22 are exposed from one of the pair of first side surfaces 53 .
  • a plurality of third end surfaces 233 of the die pad 23 are exposed from the other first side surface 53 of the pair of first side surfaces 53.
  • the plurality of first end surfaces 213, the second end surfaces 223, and the plurality of third end surfaces 233 are flush with either of the pair of first side surfaces 53.
  • the pair of second side surfaces 54 face oppositely to each other in the second direction x, and are located apart from each other in the second direction x.
  • a pair of second side surfaces 54 are connected to the top surface 51 and the bottom surface 52.
  • a pair of exposed surfaces 234B of the die pad 23 are individually exposed from the pair of second side surfaces 54.
  • the exposed surface 214B of the first lead 21 is exposed from one of the pair of second side surfaces 54.
  • the exposed surface 224B of the second lead 22 is exposed from the other of the pair of second side surfaces 54.
  • Each of the pair of exposed surfaces 234B, 214B, and 224B is flush with one of the pair of second side surfaces 54.
  • FIG. 15 a semiconductor device A11 that is a modification of the semiconductor device A10 will be described.
  • the cross-sectional position in FIG. 15 is the same (or substantially the same) as the cross-sectional position in FIG. 12.
  • the configuration of the recess 215 of the first lead 21 is different from the configuration of the semiconductor device A10.
  • the dimension d of the recess 215 in the first direction z is larger than the dimension b of the recess 215 in the third direction y.
  • the volume of the first portion 611 of the first bonding layer 61 and the dimension of the first portion 611 in the first direction z each increase compared to the case of the semiconductor device A10.
  • the dimension in the first direction z is increased compared to the case of the semiconductor device A10.
  • the semiconductor device A10 includes a first lead 21 having a first bonding surface 211 and a recess 215, a first bonding portion 31 and a first protrusion 34, and a conductive member 30 that connects the semiconductor element 10 and the first lead 21. and a first bonding layer 61 that electrically connects the first lead 21 and the conductive member 30. At least a portion of the first bonding layer 61 is accommodated in the recess 215. When viewed in the first direction z, the first protrusion 34 overlaps the first bonding layer 61 accommodated in the recess 215 .
  • the first bonding layer 61 accommodated in the recess 215 and in a molten state is exposed to the inner peripheral surface 215A. It receives a force R (see Figure 12).
  • the reaction force R is directed in a direction perpendicular to the first direction z.
  • the first protrusion 34 is displaced together with the first bonding layer 61 in the direction in which the reaction force R is directed. That is, self-alignment by the first bonding layer 61 acts on the first protrusion 34 .
  • the first protrusion 34 of the conductive member 30 projects from the first joint portion 31 of the conductive member 30 in the second direction x.
  • the torque generated in the conductive member 30 around the first direction z increases.
  • the rotational force in the opposite direction to the rotation increases more. Therefore, rotation of the conductive member 30 around the first direction z can be effectively suppressed.
  • the dimension b of the recess 215 of the first lead 21 in the third direction y is larger than the dimension B1 of the first protrusion 34 in the third direction y.
  • the recess 215 of the first lead 21 extends in the second direction x.
  • the first bonding portion 31 of the conductive member 30 overlaps the first bonding layer 61 accommodated in the recess 215 .
  • self-alignment by the first bonding layer 61 also acts on the first bonding portion 31. Therefore, the self-alignment effect acting on the conductive member 30 can be improved.
  • the dimension B2 of the first joint 31 of the conductive member 30 in the third direction y is larger than the dimension b of the recess 215 of the first lead 21 in the third direction y.
  • the conductive member 30 has a second protrusion 35 located on the opposite side of the first protrusion 34 with respect to the first joint 31 in the second direction x.
  • the second protrusion 35 protrudes from the first joint portion 31 in the second direction x.
  • the second protrusion 35 overlaps the first bonding layer 61 accommodated in the recess 215 when viewed in the first direction z.
  • the first bonding layer 61 has a first portion 611 accommodated in the recess 215 of the first lead 21 and a second portion 612 protruding from the recess 215.
  • the first protrusion 34 has a first surface 341 facing in the third direction y.
  • the second portion 612 is in contact with the first surface 341.
  • the first protrusion 34 has a second surface 342 facing the recess 215 of the first lead 21.
  • the second surface 342 is in contact with the second portion 612 of the first bonding layer 61 .
  • the dimension in the first direction z of the first bonding layer 61 in contact with the second surface 342 is increased.
  • the shear stress acting on the interface between the first bonding layer 61 and the second surface 342 increases as the first bonding layer 61 performs self-alignment. Therefore, the self-alignment effect acting on the conductive member 30 can be further improved.
  • the dimension d of the recess 215 of the first lead 21 in the first direction z is larger than the dimension b of the recess 215 in the third direction y.
  • the dimensions of the first bonding layer 61 accommodated in the recess 215 in the first direction z and the region facing the third direction y included in the inner circumferential surface 215A of the recess 215 in the first direction z are The dimensions are increased compared to the case of the semiconductor device A10.
  • the shear stress acting on the interface between the first bonding layer 61 and the second surface 342 of the first protrusion 34 further increases as the first bonding layer 61 performs self-alignment. Therefore, the self-alignment effect acting on the conductive member 30 can be further improved.
  • compositions of the first bonding layer 61, the second bonding layer 62, and the conductive bonding layer 29 include tin.
  • the first lead 21 has a first end surface 213 facing the opposite side to the side where the semiconductor element 10 is located in the third direction y.
  • the first end surface 213 is exposed from the sealing resin 50.
  • the back surface 232 of the die pad 23 is exposed from the sealing resin 50. Thereby, the heat dissipation of the semiconductor device A10 can be improved.
  • the composition of the conductive member 30 includes copper. Thereby, the electrical resistance of the conductive member 30 can be reduced compared to a wire containing aluminum in its composition. This is suitable for allowing a larger current to flow through the semiconductor element 10.
  • FIGS. 16 to 18 A semiconductor device A20 according to a second embodiment of the present disclosure will be described based on FIGS. 16 to 18.
  • elements that are the same as or similar to those of the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanation will be omitted.
  • the sealing resin 50 is shown.
  • the configuration of the conductive member 30 in the semiconductor device A20 is different from that of the semiconductor device A10.
  • the center C1 of the first protrusion 34 of the conductive member 30 is separated from the center C2 of the second protrusion 35 of the conductive member 30 by a distance D in the third direction y.
  • the center C1 corresponds to the centroid of the figure formed by the outer shape of the first protrusion 34 when viewed in the first direction z.
  • the center C2 corresponds to the centroid of the figure formed by the outer shape of the second protrusion 35 when viewed in the first direction z.
  • each of the center C1 and the center C2 is separated from the center C0 of the first joint portion 31 of the conductive member 30 in the third direction y.
  • the center C0 corresponds to the centroid of the figure formed by the outer shape of the first joint portion 31 when viewed in the first direction z.
  • the first protrusion 34 of the conductive member 30 connects the first bonding layer 61 (first portion 611) accommodated in the recess 215 of the first lead 21 and the first protrusion 34 of the conductive member 30. It overlaps with the first bonding surface 211 of the first lead 21 .
  • the second portion 612 of the first bonding layer 61 is located between the first bonding surface 211 and the second surface 342 of the first protrusion 34 .
  • the second portion 612 is in contact with one of the pair of first surfaces 341 of the first protrusion 34 .
  • the second protrusion 35 of the conductive member 30 has a pair of third surfaces 351 and a fourth surface 352.
  • the pair of third surfaces 351 face oppositely to each other in the third direction y.
  • the fourth surface 352 faces the recess 215 of the first lead 21 .
  • the second portion 612 of the first bonding layer 61 is in contact with one of the pair of third surfaces 351 .
  • the dimension b of the recess 215 in the third direction y is larger than the dimension B3 of the second protrusion 35 in the third direction y.
  • the second protrusion 35 of the conductive member 30 connects the first bonding layer 61 (first portion 611) accommodated in the recess 215 of the first lead 21 and the second protrusion 35 of the conductive member 30. It overlaps with the first bonding surface 211 of the first lead 21 .
  • the second portion 612 of the first bonding layer 61 is located between the first bonding surface 211 and the fourth surface 352 of the second protrusion 35 .
  • the semiconductor device A20 includes a first lead 21 having a first bonding surface 211 and a recess 215, a first bonding portion 31 and a first protrusion 34, and a conductive member 30 that connects the semiconductor element 10 and the first lead 21. and a first bonding layer 61 that electrically connects the first lead 21 and the conductive member 30. At least a portion of the first bonding layer 61 is accommodated in the recess 215. When viewed in the first direction z, the first protrusion 34 overlaps the first bonding layer 61 accommodated in the recess 215 . Therefore, according to this configuration, it is possible to suppress rotation of the conductive member 30 with respect to the semiconductor element 10 even when manufacturing the semiconductor device A20. Further, since the semiconductor device A20 has the same configuration as the semiconductor device A10, the semiconductor device A20 also exhibits the effects of the configuration.
  • the center C1 of the first protrusion 34 of the conductive member 30 and the center C2 of the second protrusion 35 of the conductive member 30 are located at the first junction of the conductive member 30. It is separated from the center C0 of the portion 31 in the third direction y.
  • the distance from the center C0 to the center C1 and the distance from the center C0 to the center C2 are each increased compared to the case of the semiconductor device A10.
  • the torque generated in the conductive member 30 in the first direction z about the center C0 increases compared to the case of the semiconductor device A10. Therefore, rotation of the conductive member 30 about the first direction z can be suppressed more effectively.
  • FIGS. 19 to 21 A semiconductor device A30 according to a third embodiment of the present disclosure will be described based on FIGS. 19 to 21.
  • elements that are the same as or similar to those of the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanation will be omitted.
  • FIG. 19 for convenience of understanding, the sealing resin 50 is shown.
  • the configuration of the conductive member 30 in the semiconductor device A30 is different from that of the semiconductor device A10.
  • the conductive member 30 has a convex portion 36.
  • the convex portion 36 protrudes from the second surface 342 of the first protrusion 34 of the conductive member 30 in the first direction z. Furthermore, the convex portion 36 protrudes from the opposing surface 311 of the first joint portion 31 of the conductive member 30 in the first direction z.
  • the protrusion 36 is accommodated in the recess 215 of the first lead 21 .
  • the convex portion 36 is in contact with the first portion 611 of the first bonding layer 61 .
  • the convex portion 36 extends in the second direction x.
  • the protrusion 36 is formed, for example, by etching.
  • the semiconductor device A30 includes a first lead 21 having a first bonding surface 211 and a recess 215, a first bonding portion 31 and a first protrusion 34, and a conductive member 30 that connects the semiconductor element 10 and the first lead 21. and a first bonding layer 61 that electrically connects the first lead 21 and the conductive member 30. At least a portion of the first bonding layer 61 is accommodated in the recess 215. When viewed in the first direction z, the first protrusion 34 overlaps the first bonding layer 61 accommodated in the recess 215 . Therefore, according to this configuration, it is possible to suppress rotation of the conductive member 30 with respect to the semiconductor element 10 even when manufacturing the semiconductor device A30. Furthermore, since the semiconductor device A30 has the same configuration as the semiconductor device A10, the semiconductor device A30 also exhibits the effects of the configuration.
  • the conductive member 30 has a convex portion 36 that protrudes from the first joint portion 31 and the first protrusion 34 in the first direction z.
  • the protrusion 36 is accommodated in the recess 215 of the first lead 21 .
  • the present disclosure includes the embodiments described in the appendix below. Additional note 1. a semiconductor element; a first lead separated from the semiconductor element; a conductive member that connects the semiconductor element and the first lead; a first bonding layer that electrically connects the first lead and the conductive member;
  • the first lead has a bonding surface facing in a first direction and a recess recessed from the bonding surface,
  • the conductive member has a first joint portion facing the joint surface, and a first protrusion protruding from the first joint portion, At least a portion of the first bonding layer is accommodated in the recess,
  • the semiconductor device when viewed in the first direction, the first protrusion overlaps the first bonding layer accommodated in the recess.
  • the semiconductor device according to appendix 1 wherein the first protrusion is located on the opposite side of the recess with respect to the bonding surface in the first direction.
  • Appendix 3. The semiconductor device according to appendix 2, wherein the first protrusion protrudes from the first joint in a second direction perpendicular to the first direction.
  • Appendix 4. The semiconductor device according to appendix 3, wherein a dimension of the first protrusion in a third direction perpendicular to the first direction and the second direction is smaller than a dimension of the first joint in the third direction.
  • Appendix 5. The semiconductor device according to appendix 4, wherein a dimension of the recess in the third direction is larger than a dimension of the first protrusion in the third direction.
  • the first joint portion has a facing surface opposite to the joint surface,
  • Appendix 7. The recess extends in the second direction, The semiconductor device according to any one of appendices 4 to 6, wherein the first bonding portion overlaps the first bonding layer accommodated in the recess when viewed in the first direction.
  • Appendix 8. The semiconductor device according to appendix 7, wherein a dimension of the first joint in the third direction is larger than a dimension of the recess in the third direction.
  • the first bonding layer has a first part accommodated in the recess and a second part protruding from the recess, The first protrusion has a first surface facing the third direction, The semiconductor device according to any one of appendices 4 to 9, wherein the second portion is in contact with the first surface.
  • Appendix 11 The first protrusion has a second surface facing the recess, The semiconductor device according to appendix 10, wherein the second portion is in contact with the second surface.
  • the conductive member has a second protrusion located on the opposite side of the first protrusion with respect to the first joint in the second direction, The second protrusion protrudes from the first joint in the second direction, 12.
  • Appendix 13 further comprising a die pad on which the semiconductor element is mounted, The semiconductor element has a first electrode located on a side opposite to a side facing the die pad in the first direction, The conductive member has a second joint portion facing the semiconductor element, The second bonding portion has a main surface facing the first electrode in the first direction, and a portion between the main surface and the first bonding portion in a direction perpendicular to the first direction.
  • the inclined surface is inclined with respect to the main surface on a side away from the semiconductor element in the first direction, further comprising a second bonding layer that electrically connects the first electrode and the second bonding portion,
  • the semiconductor device according to any one of appendices 1 to 12, wherein the second bonding layer is in contact with the main surface and the inclined surface.
  • Appendix 14 The semiconductor element has a second electrode located on the opposite side of the first electrode in the first direction, The semiconductor device according to attachment 13, wherein the second electrode is conductively bonded to the die pad.
  • Appendix 16. further comprising a sealing resin that covers a portion of each of the die pad and the first lead, the semiconductor element and the conductive member,
  • the die pad has a back surface facing opposite to the side where the semiconductor element is located in the first direction
  • the first lead has a mounting surface facing opposite to the bonding surface in the first direction, 16.
  • Appendix 17. The first lead has an end face facing opposite to the side where the semiconductor element is located in a direction perpendicular to the first direction, The semiconductor device according to appendix 16, wherein the end surface is exposed from the sealing resin.

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
PCT/JP2023/008997 2022-03-24 2023-03-09 半導体装置 Ceased WO2023181957A1 (ja)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090121330A1 (en) * 2007-11-08 2009-05-14 Randolph Cruz Clip Mount For Integrated Circuit Leadframes
JP2015144188A (ja) * 2014-01-31 2015-08-06 株式会社東芝 半導体装置及びその製造方法
JP2017073406A (ja) * 2014-02-24 2017-04-13 三菱電機株式会社 電極リードおよび半導体装置
JP2019087657A (ja) * 2017-11-08 2019-06-06 株式会社東芝 半導体装置
JP2021048376A (ja) * 2019-09-20 2021-03-25 株式会社東芝 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090121330A1 (en) * 2007-11-08 2009-05-14 Randolph Cruz Clip Mount For Integrated Circuit Leadframes
JP2015144188A (ja) * 2014-01-31 2015-08-06 株式会社東芝 半導体装置及びその製造方法
JP2017073406A (ja) * 2014-02-24 2017-04-13 三菱電機株式会社 電極リードおよび半導体装置
JP2019087657A (ja) * 2017-11-08 2019-06-06 株式会社東芝 半導体装置
JP2021048376A (ja) * 2019-09-20 2021-03-25 株式会社東芝 半導体装置

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