WO2023123602A1 - 一种旋转式晶圆交互系统 - Google Patents

一种旋转式晶圆交互系统 Download PDF

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Publication number
WO2023123602A1
WO2023123602A1 PCT/CN2022/074443 CN2022074443W WO2023123602A1 WO 2023123602 A1 WO2023123602 A1 WO 2023123602A1 CN 2022074443 W CN2022074443 W CN 2022074443W WO 2023123602 A1 WO2023123602 A1 WO 2023123602A1
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WIPO (PCT)
Prior art keywords
wafer
tray
bracket
interaction
rotary
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PCT/CN2022/074443
Other languages
English (en)
French (fr)
Inventor
吴兴
许振杰
陈映松
王同庆
路新春
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华海清科股份有限公司
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Publication of WO2023123602A1 publication Critical patent/WO2023123602A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping

Definitions

  • the invention relates to the technical field of chemical mechanical polishing, in particular to a rotary wafer interaction system.
  • CMP Chemical Mechanical Polishing
  • An embodiment of the present invention provides a rotary wafer interaction system, aiming to solve at least one of the technical problems existing in the prior art.
  • An embodiment of the present invention provides a rotary wafer interaction system, including a tray assembly and at least one wafer interaction device;
  • the tray assembly includes a rotating shaft and at least two trays for receiving wafers, the tray is connected to the rotating shaft and can rotate with the rotating shaft to rotate at different positions;
  • the wafer interaction device is arranged around the rotation axis and located directly below the tray.
  • the wafer interaction device includes a bracket and a lifting mechanism, and the bracket is connected with the lifting mechanism to realize lifting.
  • the carrier may be raised through the tray and receive a wafer placed on the tray.
  • the tray is a ring structure, and wafer positioning pins are provided on the inner edge of the ring structure.
  • the carrier has an annular edge for receiving a wafer, the annular edge has a shape that matches the inner edge of the annular structure, such that the annular edge receives the wafer through the annular structure.
  • the stations for tray rotation include a manipulator interaction station for wafer transfer with a robot arm and a wafer interaction station for wafer transfer with a wafer interaction device.
  • the wafer interaction device is arranged at the wafer interaction station, and realizes the wafer interaction with the polishing head at the station.
  • the carriage rises to a first height for wafer interaction with the tray, and the carriage rises to a second height for wafer interaction with the polishing head, wherein the The second height is higher than the first height.
  • the wafer interaction device includes a bracket connected sequentially from top to bottom, a bracket support assembly, a connecting plate, and a lifting mechanism.
  • the bracket is fixed on the connecting plate through the bracket supporting assembly, and can be connected Plate lifting.
  • the upper surface of the bracket is provided with multiple sets of guide pins and positioning pins distributed along the circumference
  • the wafer interaction device further includes a retaining ring coaxially disposed on the periphery of the bracket.
  • the beneficial effects of the embodiments of the present invention include: the wafer interaction between the manipulator and the polishing head can be realized by using the tray assembly and the wafer interaction device, and the WPH of the machine is improved.
  • FIG. 1 shows a rotary wafer interaction system provided by an embodiment of the present invention
  • FIG. 5 and FIG. 6 show a wafer interaction device provided by an embodiment of the present invention
  • chemical mechanical polishing is also called chemical mechanical planarization (Chemical Mechanical Planarization)
  • wafer is also called wafer, silicon chip, substrate or substrate (substrate), its meaning and The actual effect is the same.
  • FIG. 1 shows a rotary wafer interaction system 100 provided by an embodiment of the present invention, which includes a tray assembly 20 and at least one wafer interaction device 10; the tray assembly 20 is located above and can rotate around a vertical central axis. The wafer interaction device 10 is located under the tray assembly 20 .
  • Polishing units are arranged around the rotary wafer interaction system 100 . As shown in FIG. 12 , four polishing units are distributed in a circle, and each polishing unit includes a polishing disc 51 and a polishing head 50 .
  • the rotary wafer interaction system 100 is located at the center of the 4 polishing units.
  • Each polishing unit corresponds to a fixed wafer interaction device 10 .
  • the polishing head 50 of the polishing unit can move linearly between the wafer interaction device 10 and the polishing disc 51 to perform related pick-and-place wafer and polishing operations.
  • Each wafer interaction device 10 is located under the tray assembly 20 , and the tray assembly 20 is located under each polishing head 50 .
  • the tray assembly 20 includes a rotating shaft 21 and at least two trays 22 for receiving wafers, and the trays 22 are evenly distributed along the outer periphery of the rotating shaft 21 .
  • the embodiment of the present invention is provided with 6 pallets 22 in Fig. 2 as an example, these 6 pallets 22 are evenly distributed along the circumference, 6 pallets 22 are connected on the rotating shaft 21, and the rotating shaft 21 is positioned at the center of 6 pallets 22 and provides Rotational power can realize clockwise or counterclockwise N ⁇ 360° rotation according to needs, and the tray 22 can stop at a certain precise position arbitrarily during the rotation process.
  • the number of trays 22 shown in FIG. 2 is only an example, and may actually be other numbers, such as 2, 3, 4, 5, and so on.
  • the rotating shaft 21 is driven by the driving mechanism to rotate, and the tray 22 is connected to the rotating shaft 21 and can rotate along with the rotating shaft 21 to rotate in different positions.
  • the stations where the tray 22 rotates include the manipulator interaction stations S1 and S2 for wafer transfer with the manipulator 40 and the wafer transfer stations for wafer transfer with the wafer interaction device 10.
  • the tray 22 can rotate around the rotation axis 21 among different manipulator interaction stations S1 , S2 , wafer interaction stations S3 , S4 , S5 or S6 .
  • the tray 22 has a ring structure, and at least three wafer positioning pins 221 are provided on the inner edge of the ring structure, which can position the wafer when the manipulator 40 places the wafer on the tray 22 .
  • the wafer positioning pin 221 is a taper pin, which includes a tapered portion at the head and a cylindrical section below; the tapered portion at the head of the wafer positioning pin 221 can allow the manipulator 40 to When the manipulator 40 is slightly shifted when placing the film, the tapered part can make the wafer slide down to the cylindrical section of the wafer positioning pin 221 along its taper direction for accurate positioning.
  • the wafer interaction device 10 is arranged around the rotation axis 21 and located directly under the tray 22 .
  • a polishing unit is provided at a corresponding position of the wafer interaction device 10 .
  • the wafer interaction device 10 is set at the wafer interaction station S3 , S4 , S5 or S6 , and realizes the wafer interaction with the polishing head 50 at this station.
  • the number of wafer interaction stations is the number of wafer interaction devices 10 .
  • the wafer interaction device 10 is used to transfer the wafer w, so as to transfer the wafer w between the tray assembly 20 and the polishing head 50 .
  • At least two wafer interaction devices 10 can be arranged at intervals to operate simultaneously to improve production efficiency.
  • FIG. 1 only exemplarily shows a specific embodiment in which four wafer interaction devices 10 are provided, and other numbers, such as 1, 2, 3, etc., may also be provided in actual wafer interaction devices 10 .
  • the wafer interaction device 10 includes a bracket 11 , a bracket support assembly 15 , a connecting plate 12 and a lifting mechanism 13 sequentially connected from top to bottom.
  • the bracket 11 is fixed on the connection plate 12 through the bracket support assembly 15 , and can follow the connection plate 12 up and down.
  • the connecting plate 12 is connected with the lifting mechanism 13 to lift the bracket 11 under the drive of the lifting mechanism 13 .
  • the bracket 11 is mainly a carrier for carrying and positioning the wafer w and interacting with the polishing head 50 .
  • the lifting mechanism 13 is mainly composed of electric actuators, connecting components, etc., and is mainly used to lift components such as the bracket 11 to a specific interaction position.
  • Carriage 11 can be raised through tray 22 and receive a wafer placed on tray 22 .
  • the bracket 11 has an annular edge for receiving a wafer, and the annular edge has a shape matching the inner edge of the annular structure, so that the annular edge passes through the annular structure to receive the wafer.
  • the wafer interaction device 10 further includes a retaining ring 14, which is arranged on the periphery of the bracket 11 and the connection plate 12, and the retaining ring 14 is fixed on the table and cannot be moved.
  • the retaining ring 14 is arranged coaxially with the bracket 11, and the retaining ring 14 is used to collect the liquid in the cleaning and/or moisturizing process.
  • the interaction process between the tray assembly 20 and the manipulator 40 is as follows: the tray 22 rotates to the manipulator interaction stations S1 and S2, the manipulator 40 places the wafer on the tray 22, and positions it through the wafer positioning pin 221, or , the manipulator 40 removes the wafer on the tray 22 .
  • the bracket 11 can be lifted up and down and used for placing wafers.
  • the interaction process of the wafer interaction shaft, the tray assembly 20 and the polishing head 50 is as follows: the tray 22 rotates to the wafer interaction station S3, S4, S5 or S6, that is, directly above a certain wafer interaction device 10 concentric, the wafer
  • the circle interaction device 10 drives the bracket 11 to move upwards, and transfers the wafer from the tray 22 to the bracket 11 while passing through the tray 22 , and the bracket 11 continues to move up to a certain height and interacts with the polishing head 50 .
  • the tray 22 rotates with the wafer to directly above the tray 11, that is, the wafer interaction station S3, S4, S5 or S6. At this time, the tray 11 is under the tray 22 at an initial height H 0 , the polishing head 50 is above the tray 22.
  • the lifting mechanism 13 drives the bracket 11 to move upward, the bracket 11 rises to a first height H 1 , the bracket 11 passes through the tray 22, and the upper surface of the bracket 11 contacts the wafer and receives it from the tray 22 wafers, thereby realizing the wafer interaction between the bracket 11 and the tray 22 .
  • the lifting mechanism 13 does not stop, and the bracket 11 continues to move upward.
  • the bracket 11 and the tray 22 are in parallel positions
  • the upper surface of the bracket 11 is provided with multiple groups of guide pins 111 and positioning pins 112 distributed along the circumference, and each group of guide pins 111 and positioning pins 112 are arranged adjacently
  • the guide pin 111 is a taper pin
  • the positioning pin 112 is a cylindrical pin
  • the height of the guide pin 111 is greater than the height of the positioning pin 112.
  • the main function of the guide pins 111 is a guiding function.
  • the bottom of guide pin 111 is provided with telescopic spring, and the head of guide pin 111 is conical, stretches out relatively long, and guide pin 111 can be pressed down when polishing head 50 presses and takes sheet, and guide pin 111 head At this time, the tapered portion of the wafer cannot be positioned, and the positioning pin 112 is required to limit the wafer at this time to prevent the wafer from shifting.
  • the bracket 11 continues to rise to the second height H 2 and stops moving. At this time, the bracket 11 is very close to the polishing head 50, and the air film action of the polishing head 50 expands downward and sucks it from the bracket 11. Wafer, the wafer is transferred to the polishing head 50, thereby realizing the wafer interaction between the bracket 11 and the polishing head 50, and the polishing head 50 takes the wafer away for polishing.
  • the second height H 2 is higher than the first height H 1 .
  • the bracket 11 descends back to the initial height H 0 , and the tray 22 can perform the next rotation.
  • the wafer needs to be placed on the tray 22 so as to be transferred to each station.
  • the interaction process is similar to the above-mentioned reverse process of the polishing head 50 picking up the wafer.
  • the lifting mechanism 13 pushes the bracket 11 not carrying the wafer to move upward to the second height H 2 interacting with the polishing head 50.
  • the polishing head 50 air film and keeps The ring moves downward and interacts with the bracket 11, so that the wafer is placed on the bracket 11, and then the lifting mechanism 13 drives the bracket 11 to move downward, the bracket 11 penetrates the tray 22, and the wafer is placed on the tray 22 , the lifting mechanism 13 does not stop during this process, and continues to drive the bracket 11 down to the initial height H 0 , and then the tray assembly 20 carrying the wafer can rotate to transport the wafer to the next station.
  • Step 1 the manipulator 40 places the wafer 1 and wafer 2 on the tray 22 located at the manipulator interaction stations S1 and S2 .
  • Step 2 as shown in FIG. 13 , the tray 22 rotates, and the wafer 1 and wafer 2 are transferred to the corresponding positions of the polishing unit P2 and the polishing unit P1 (wafer interaction station), and then the tray 11 and the tray 22,
  • the polishing head 50 interacts with the wafer, and the corresponding polishing head 50 moves (as shown by the double-headed arrow in the figure) to pick up the wafer and returns to the polishing unit for polishing.
  • the manipulator 40 transfers the wafer 3 and the wafer 4 to the tray 22 for waiting. After the polishing operations in the polishing unit P2 and the polishing unit P1 are completed, the polished wafer 1 and wafer 2 are put back into the tray 22 by the polishing head 50 .
  • Step 3 as shown in FIG. 14 , the tray 22 rotates, and the wafer 1 and wafer 2 are transferred to the polishing unit P4 and the polishing unit P3, and the polishing head 50 sucks the wafer 1 and the wafer 2 for secondary polishing operation, and the polishing After finishing, send back to tray 22 , meanwhile wafer 3 and wafer 4 are firstly polished in the corresponding polishing unit respectively, wafer 5 and wafer 6 are put into tray 22 by manipulator 40 .
  • Step 4 as shown in FIG. 15 , the tray 22 is rotated, and the polished wafer 1 and wafer 2 are re-transferred to the initial placement position (manipulator interaction station), and then the polished wafer 1 is placed by the manipulator 40 And wafer 2 is transferred to the next process.
  • the polishing head 50 does not need to wait for the manipulator 40 to pick up and place the wafers after polishing, but directly performs wafer processing with the trays 22 that have been prepared in advance.
  • Interactively pick and place the film compared to the slow action time of the traditional manipulator 40, the time for the tray 22 to run at an angle (for example, 120°) is much less than the time for the manipulator 40 to take and place the film. Therefore, the present application The scheme in can greatly improve the WPH of the machine.
  • references to the terms “one embodiment,” “some embodiments,” “exemplary embodiments,” “example,” “specific examples,” or “some examples” are intended to mean that the implementation A specific feature, structure, material, or characteristic described by an embodiment or example is included in at least one embodiment or example of the present invention.
  • schematic representations of the above terms do not necessarily refer to the same embodiment or example.
  • the specific features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

本发明公开了一种旋转式晶圆交互系统，包括托盘组件和至少一个晶圆交互装置；所述托盘组件包括旋转轴和至少两个用于承接晶圆的托盘，托盘与旋转轴连接并可跟随旋转轴转动以在不同工位轮转；所述晶圆交互装置围绕所述旋转轴布置并位于所述托盘的正下方，所述晶圆交互装置包括托架和升降机构，所述托架与所述升降机构连接以实现升降。

Description

一种旋转式晶圆交互系统 技术领域
本发明涉及化学机械抛光技术领域，尤其涉及一种旋转式晶圆交互系统。
背景技术
化学机械抛光(Chemical Mechanical Polishing，CMP)是一种全局平整化的超精密表面加工工艺。抛光系统的布局直接影响机台WPH(wafer per hour，每小时的出片量)，是决定机台核心竞争力的最大影响因素。对于现有机台的布局而言，抛光头完成晶圆抛光后，回到晶圆交互工位，并将晶圆放置到该交互工位，CMP机械手再将晶圆从该工位取走进行下道工序，随后又由CMP机械手将未抛光的晶圆由前序工位转移至晶圆交互工位，抛光头再从晶圆交互工位吸取晶圆进行抛光作业。在整个过程中，存在抛光头等待机械手取放片的时间，浪费了宝贵的时间，减小了机台WPH。因此如何减少非抛光的辅助过程或时间，是提高机台核心竞争力的一个亟待解决的问题。
发明内容
本发明实施例提供了一种旋转式晶圆交互系统，旨在至少解决现有技术中存在的技术问题之一。
本发明实施例提供了一种旋转式晶圆交互系统，包括托盘组件和至少一个晶圆交互装置；
所述托盘组件包括旋转轴和至少两个用于承接晶圆的托盘，托盘与旋转轴连接并可跟随旋转轴转动以在不同工位轮转；
所述晶圆交互装置围绕所述旋转轴布置并位于所述托盘的正下方，所述晶圆交互装置包括托架和升降机构，所述托架与所述升降机构连接以实现升降。
在一个实施例中，所述托架可穿过所述托盘上升并接收置于所述托盘上的晶圆。
在一个实施例中，所述托盘为环形结构，所述环形结构的内边缘设有晶圆定位销。
在一个实施例中，所述托架具有用于承接晶圆的环形边缘，所述环形边缘具有与所述环形结构内缘匹配的形状，以实现环形边缘穿过环形结构接收晶圆。
在一个实施例中，所述托盘轮转的工位包括用于与机械手之间进行晶圆传输的机械手交互工位以及用于与晶圆交互装置之间进行晶圆传输的晶圆交互工位。
在一个实施例中，所述晶圆交互装置设置于所述晶圆交互工位，并在该工位实现与抛光头之间的晶圆交互。
在一个实施例中，所述托架上升至第一高度以与所述托盘之间实现晶圆交互，所述托架上升至第二高度以与抛光头之间进行晶圆交互，其中，所述第二高度高于所述第一高度。
在一个实施例中，晶圆交互装置包括由上至下依次连接的托架、托架支撑组件、连接板和升降机构，所述托架通过托架支撑组件固定在连接板上，可跟随连接板升降。
在一个实施例中，所述托架上表面设有多组沿圆周分布的导向销和定位销
在一个实施例中，所述晶圆交互装置还包括挡圈，挡圈同轴设置于所述托架的圆周外围。
本发明实施例的有益效果包括：能够利用托盘组件和晶圆交互装置实现机械手与抛光头之间的晶圆交互，提高了机台的WPH。
附图说明
通过结合以下附图所作的详细描述，本发明的优点将变得更清楚和更容易理解，但这些附图只是示意性的，并不限制本发明的保护范围，其中：
图1示出了本发明一实施例提供的旋转式晶圆交互系统；
图2至图4示出了本发明一实施例提供的托盘组件；
图5和图6示出了本发明一实施例提供的晶圆交互装置；
图7至图15示意了旋转式晶圆交互系统的工作过程。
具体实施方式
下面结合具体实施例及其附图，对本发明所述技术方案进行详细说明。在此记载的实施例为本发明的特定的具体实施方式，用于说明本发明的构思；这些说明均是解释性和示例性的，不应理解为对本发明实施方式及本发明保护范围的限制。需要说明的是，在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互组合。除在此记载的实施例外，本领域技术人员还能够基于本申请权利要求书及其说明书所公开的内容采用显而易见的其它技术方案，这些技术方案包括采用对在此记载的实施例的做出任何显而易见的替换和修改的技术方案。应当理解的是，除非特别予以说明，为了便于理解，以下对本发明具体实施方式的描述都是建立在相关设备、装置、部件等处于原始静止的未给与外界控制信号和驱动力的自然状态下描述的。
此外，还需要说明的是，本申请中使用的例如前、后、上、下、左、右、顶、底、正、背、水平、垂直等表示方位的术语仅仅是为了便于说明，用以帮助对相对位置或方向的理解，并非旨在限制任何装置或结构的取向。
为了说明本发明所述的技术方案，下面将参考附图并结合实施例来进行说明。
在本申请中，化学机械抛光(Chemical Mechanical Polishing)也称为化学机械平坦化(Chemical Mechanical Planarization)，晶圆(wafer)也称为晶片、硅片、基片或基板(substrate)，其含义和实际作用等同。
图1示出了本发明一实施例提供的旋转式晶圆交互系统100，其包括托盘组件20和至少一个晶圆交互装置10；托盘组件20位于上方，可绕一竖直中心 轴旋转。晶圆交互装置10位于托盘组件20下方。
旋转式晶圆交互系统100的周围布局抛光单元。如图12所示，4个抛光单元呈圆周分布，每个抛光单元包括一抛光盘51和一抛光头50。旋转式晶圆交互系统100位于4个抛光单元的中心位置。每个抛光单元分别对应一个位置固定的晶圆交互装置10。抛光单元的抛光头50可在晶圆交互装置10和抛光盘51之间作直线运动从而进行相关的取放片及抛光作业。每个晶圆交互装置10位于托盘组件20的下方，托盘组件20又位于各抛光头50的下方。
如图2所示，托盘组件20包括旋转轴21和至少两个用于承接晶圆的托盘22，托盘22沿旋转轴21的外周均匀分布。本发明实施例以图2中设有6个托盘22为例，这6个托盘22沿圆周均布，6个托盘22连接在旋转轴21上，旋转轴21位于6个托盘22的中心并提供旋转动力，根据需要可实现顺时针或逆时针N×360°的旋转，旋转过程中托盘22可任意停止在某一精确位置。显然，图2中示出的托盘22的数量仅为一种举例，实际还可以为其他数量，比如2、3、4、5等。
旋转轴21由驱动机构驱动实现旋转，托盘22与旋转轴21连接并可跟随旋转轴21转动，以在不同工位轮转。如图1所示，托盘22轮转的工位包括用于与机械手40之间进行晶圆传输的机械手交互工位S1、S2以及用于与晶圆交互装置10之间进行晶圆传输的晶圆交互工位S3、S4、S5或S6。托盘22可绕旋转轴21在不同的机械手交互工位S1、S2、晶圆交互工位S3、S4、S5或S6之间轮转。
如图3所示，托盘22为环形结构，环形结构的内边缘设有至少三个晶圆定位销221，可在机械手40将晶圆放置在托盘22上时对晶圆进行定位。如图4所示，晶圆定位销221为锥头销，包括位于头部的锥形部和下方的圆柱段；位于晶圆定位销221头部的锥形部可以在一定范围内允许机械手40的放片容错率，当机械手40放片稍微出现偏移时，锥形部可使得晶圆沿其锥度方向下滑至晶圆定位销221的圆柱段进行准确定位。
如图1所示，晶圆交互装置10围绕旋转轴21布置并位于托盘22的正下方。在晶圆交互装置10的对应位置设置有抛光单元。晶圆交互装置10设置在晶圆交互工位S3、S4、S5或S6，并在该工位实现与抛光头50之间的晶圆交互。晶圆交互工位的数量即为晶圆交互装置10的数量。晶圆交互装置10用于转运晶圆w，从而实现在托盘组件20与抛光头50之间传输晶圆w。
在一个实施例中，晶圆交互装置10可以间隔设置至少两个，同时作业，提高生产效率。图1仅示例性地示意出了设置4个晶圆交互装置10的一个具体实施例，实际晶圆交互装置10还可以设置其他数量，比如1、2、3等。
如图5和图6所示，晶圆交互装置10包括由上至下依次连接的托架11、托架支撑组件15、连接板12和升降机构13。托架11通过托架支撑组件15固定在连接板12上，可跟随连接板12升降。连接板12与升降机构13连接，以在升降机构13的驱动下带着托架11升降。其中，托架11主要是晶圆w承载及定位、与抛光头50交互的载体。升降机构13主要由电动执行元件、连接组件等组成，主要作用为将托架11等组件举升到特定交互位置。
托架11可穿过托盘22上升并接收置于托盘22上的晶圆。托架11具有用于承接晶圆的环形边缘，环形边缘具有与环形结构内缘匹配的形状，以实现环形边缘穿过环形结构接收晶圆。
在一个实施例中，如图5和图6所示，晶圆交互装置10还包括挡圈14，挡圈14设置于托架11和连接板12的外围，挡圈14固定在台面上不可移动，挡圈14与托架11同轴设置，挡圈14用于收集清洗和/或保湿过程中的液体。
如图7所示，托盘组件20与机械手40的交互过程为：托盘22旋转至机械手交互工位S1、S2，机械手40将晶圆放置在托盘22上，通过晶圆定位销221进行定位，或者，机械手40将托盘22上的晶圆取下。
如图8至图11所示，托架11可上下做举升动作并用于放置晶圆。晶圆交互转轴、托盘组件20与抛光头50的交互过程为：托盘22旋转到晶圆交互工位S3、S4、S5或S6，即与某一晶圆交互装置10同心的正上方，该晶圆交互装置 10驱动托架11作上升运动，贯穿托盘22的同时将晶圆从托盘22上转移至托架11上，托架11继续上升运动到某一高度并与抛光头50交互。
如图8所示，托盘22带着晶圆旋转至托架11的正上方，即晶圆交互工位S3、S4、S5或S6，此时，托架11在托盘22下方，处于初始高度H 0，抛光头50在托盘22上方。
如图9所示，升降机构13驱动托架11向上移动，托架11上升至第一高度H 1，托架11穿过托盘22，托架11的上表面接触晶圆并从托盘22上接收晶圆，从而实现了托架11与托盘22之间的晶圆交互。晶圆从托盘22转移至托架11的过程中，升降机构13不停机，托架11持续上移。其中，图10示意出了托架11与托盘22处于平行位置处的状态，托架11上表面设有多组沿圆周分布的导向销111和定位销112，每一组导向销111和定位销112相邻设置，导向销111为锥头销，定位销112为圆柱销，导向销111的高度大于定位销112的高度。导向销111的主要作用是导向作用，当托架11上升到第一高度H 1时，导向销111可以预先对晶圆进行对正引导，以便晶圆可以准确地落在定位销112的定位尺寸上。导向销111的底部设有可伸缩的弹簧，导向销111的头部是锥形，伸出来比较长，当抛光头50下压取片的时候会把导向销111压下去，导向销111头部的锥形部分此时无法定位，需要定位销112在此时限制晶圆防止晶圆偏移。
如图11所示，托架11持续上升至第二高度H 2，停止移动，此时托架11距离抛光头50很近，抛光头50的气膜动作向下膨胀并从托架11上吸取晶圆，晶圆转移至抛光头50，从而实现了托架11与抛光头50之间的晶圆交互，抛光头50取走晶圆进行抛光。显然，第二高度H 2高于第一高度H 1。另外，抛光头50取得晶圆后，托架11下降回到初始高度H 0，托盘22可执行下一次轮转。
类似地，在抛光头50完成抛光作业后，需要将晶圆放置到托盘22上，以便进行各工位传输。其交互过程类似上述抛光头50吸取晶圆的逆向过程，升降机构13推动未载有晶圆的托架11向上运动到与抛光头50交互的第二高度H 2， 抛光头50气膜及保持环向下动作并与托架11交互，从而将晶圆放置到托架11上，然后升降机构13带动托架11再向下运动，托架11贯穿托盘22，并将晶圆过渡放置到托盘22上，此过程升降机构13不停机，继续带动托架11下降至到初始高度H 0，然后载有晶圆的托盘组件20可旋转，将晶圆运输到下一工位。
为了便于理解，下面参照图12至图15，说明旋转式晶圆交互系统100的工作过程：
步骤1，如图12所示，机械手40将晶圆1、晶圆2放置在位于机械手交互工位S1、S2的托盘22上。
步骤2，如图13所示，托盘22旋转，晶圆1和晶圆2分别转移至抛光单元P2和抛光单元P1的对应位置(晶圆交互工位)，随后执行托架11与托盘22、抛光头50的晶圆交互，对应的抛光头50移动(如图中双向箭头所示)吸取晶圆并回到抛光单元进行抛光作业。另外，在抛光单元P2和抛光单元P1的抛光过程中，机械手40将晶圆3、晶圆4传送至托盘22上等候。抛光单元P2和抛光单元P1中的抛光作业完成后，抛光后的晶圆1、晶圆2由抛光头50再放回托盘22。
步骤3，如图14所示，托盘22旋转，晶圆1和晶圆2转移至抛光单元P4和抛光单元P3处，由抛光头50吸取晶圆1、晶圆2进行二次抛光作业，抛完后送回托盘22，同时晶圆3、晶圆4分别在对应的抛光单元进行首次抛光，晶圆5、晶圆6由机械手40放至托盘22。
步骤4，如图15所示，托盘22旋转，完成抛光后的晶圆1和晶圆2重新转移至初始放片位置(机械手交互工位)，再由机械手40将完成抛光后的晶圆1和晶圆2传送到下一工序。
以上整个流程中，因为晶圆通过多个托盘组件20进行循环储存及运输，抛光头50在完成抛光后无需等待机械手40取片再放片，而直接与已经提前准备好的托盘22进行晶圆交互取放片，相比于传统机械手40缓慢的取放片动作时间，托盘22运转一个角度(例如120°)的时间要大大地少于机械手40取片 并放片的时间，因此，本申请中的方案能够极大地提高机台WPH。
本说明书的附图为示意图，辅助说明本发明的构思，示意性地表示各部分的形状及其相互关系。应当理解的是，为了便于清楚地表现出本发明实施例的各部件的结构，各附图之间并未按照相同的比例绘制，相同的参考标记用于表示附图中相同的部分。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示意性实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
尽管已经示出和描述了本发明的实施例，本领域的普通技术人员可以理解：在不脱离本发明的原理和宗旨的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由权利要求及其等同物限定。

Claims (10)

  1. 一种旋转式晶圆交互系统，其特征在于，包括托盘组件和至少一个晶圆交互装置；
    所述托盘组件包括旋转轴和至少两个用于承接晶圆的托盘，托盘与旋转轴连接并可跟随旋转轴转动以在不同工位轮转；
    所述晶圆交互装置围绕所述旋转轴布置并位于所述托盘的正下方，所述晶圆交互装置包括托架和升降机构，所述托架与所述升降机构连接以实现升降。
  2. 如权利要求1所述的旋转式晶圆交互系统，其特征在于，所述托架可穿过所述托盘上升并接收置于所述托盘上的晶圆。
  3. 如权利要求2所述的旋转式晶圆交互系统，其特征在于，所述托盘为环形结构，所述环形结构的内边缘设有晶圆定位销。
  4. 如权利要求3所述的旋转式晶圆交互系统，其特征在于，所述托架具有用于承接晶圆的环形边缘，所述环形边缘具有与所述环形结构内缘匹配的形状，以实现环形边缘穿过环形结构接收晶圆。
  5. 如权利要求1所述的旋转式晶圆交互系统，其特征在于，所述托盘轮转的工位包括用于与机械手之间进行晶圆传输的机械手交互工位以及用于与晶圆交互装置之间进行晶圆传输的晶圆交互工位。
  6. 如权利要求5所述的旋转式晶圆交互系统，其特征在于，所述晶圆交互装置设置于所述晶圆交互工位，并在该工位实现与抛光头之间的晶圆交互。
  7. 如权利要求6所述的旋转式晶圆交互系统，其特征在于，所述托架上升至第一高度以与所述托盘之间实现晶圆交互，所述托架上升至第二高度以与抛光头之间进行晶圆交互，其中，所述第二高度高于所述第一高度。
  8. 如权利要求1至7任一项所述的旋转式晶圆交互系统，其特征在于，所述晶圆交互装置包括由上至下依次连接的托架、托架支撑组件、连接板和升降机构，所述托架通过托架支撑组件固定在连接板上，可跟随连接板升降。
  9. 如权利要求8所述的旋转式晶圆交互系统，其特征在于，所述托架上表面设有多组沿圆周分布的导向销和定位销
  10. 如权利要求1所述的旋转式晶圆交互系统，其特征在于，所述晶圆交互装置还包括挡圈，挡圈同轴设置于所述托架的圆周外围。
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