WO2023108688A1 - 显示面板及电子设备 - Google Patents

显示面板及电子设备 Download PDF

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Publication number
WO2023108688A1
WO2023108688A1 PCT/CN2021/139768 CN2021139768W WO2023108688A1 WO 2023108688 A1 WO2023108688 A1 WO 2023108688A1 CN 2021139768 W CN2021139768 W CN 2021139768W WO 2023108688 A1 WO2023108688 A1 WO 2023108688A1
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WO
WIPO (PCT)
Prior art keywords
light
layer
panel
display panel
driving circuit
Prior art date
Application number
PCT/CN2021/139768
Other languages
English (en)
French (fr)
Inventor
江晓苏
阮崇鹏
丁曼曼
刘生泽
鲜于文旭
Original Assignee
武汉华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US17/622,840 priority Critical patent/US20240037980A1/en
Publication of WO2023108688A1 publication Critical patent/WO2023108688A1/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H10K39/34—Organic image sensors integrated with organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses

Definitions

  • the present application relates to the technical field of flexible display, in particular to a display panel and electronic equipment.
  • the principle of pattern recognition is as follows: the panel emits light, and the photoelectric sensor receives the light reflected from the valley or ridge of the fingerprint, and generates a corresponding electrical signal; due to the difference in reflection between the valley and the ridge, the generated electrical signal There are also differences, enabling identification of valleys and ridges.
  • the fingerprint identification technology mainly uses photoelectric sensors to collect fingerprint images, but there is a problem of a large signal-to-noise ratio in the existing fingerprint identification technology.
  • the present application provides a display panel and an electronic device capable of reducing or eliminating the incidence of stray light in the environment and making the reflected light incident on the photosensitive layer at as small a right angle as possible to improve the signal-to-noise ratio.
  • the application provides a display panel, including:
  • the first panel includes a plurality of light-emitting units and a first driving circuit layer, and the first driving circuit layer includes a plurality of first driving transistors electrically connected to the light-emitting units respectively; the first panel also includes a plurality of transparent In the light area, one of the light-transmitting areas is located between two adjacent light-emitting units;
  • the second panel includes a plurality of photoelectric sensing elements and a second driving circuit layer; the second driving circuit layer includes and a plurality of second driving transistors, and the second driving transistors are electrically connected to the photoelectric sensing elements;
  • the photoelectric sensing element is opposite to the light transmission area;
  • the binding layer is located between the first panel and the second panel and binds and connects the first panel and the second panel.
  • the binding layer is transparent.
  • the binding layer is optical glue.
  • the thickness of the binding layer is 52um-100um.
  • the first panel further includes a first driving circuit layer and a pixel definition layer on the first driving circuit layer
  • the pixel definition layer includes a light-transmitting part and a light-impermeable part
  • the opaque part of the pixel definition layer includes a plurality of pixel openings
  • one of the light-emitting units is accommodated in one of the pixel openings
  • the light-transmitting part of the pixel-defining layer is located in the light-transmitting region, so
  • the light-transmitting part of the pixel definition layer includes a plurality of light-transmitting holes, and each of the light-transmitting holes is located between two adjacent pixel openings.
  • the pixel definition layer is black.
  • each of the light transmission holes at least partially overlaps with the orthographic projection of the opposite photoelectric sensing element on the second driving circuit layer.
  • the first panel further includes a first substrate, the first driving circuit layer is formed on the first substrate, and the light emitting unit is formed on the first substrate. A side of the driving circuit layer away from the first substrate; the binding layer is located on a side of the first substrate away from the first driving circuit layer.
  • the first panel further includes a first encapsulation layer formed on the pixel definition layer and covering the light emitting unit, and multiple encapsulation layers formed on the first encapsulation layer.
  • a plurality of the lenses are arranged in an array, and one of the lenses is opposite to one of the light-transmitting regions.
  • the second panel further includes a second encapsulation layer, the second encapsulation layer is formed on the second drive circuit layer and covers the photoelectric sensing element;
  • the binding layer is located on a side of the second encapsulation layer away from the second driving circuit layer.
  • the first panel further includes a first driving circuit layer, and the first driving circuit layer includes a plurality of first driving transistors respectively electrically connected to the light emitting units;
  • the second driving circuit layer further includes a plurality of third driving transistors, and the third driving transistors are electrically connected to the first driving transistors.
  • a plurality of through holes are opened on the bonding layer, each of the through holes is filled with a conductive material, and one of the first driving transistors corresponds to one of the first driving transistors.
  • the third driving transistor is electrically connected through one of the through holes.
  • the photoelectric sensing element is a photodetection element.
  • the present application also provides an electronic device, which includes a device body, and the electronic device further includes a display panel as described above, and the display panel is located on the device body or in the device body.
  • the first panel including the light-emitting unit and the second panel including the photoelectric sensing element are bound together through a binding layer, and the binding layer is located between the first panel and the second panel. between the panels, and make the photoelectric sensing element face the light transmission hole on the pixel definition layer of the first panel, the binding layer can increase and regulate the distance from the light transmission hole to the photoelectric sensing element, and then An optical path close to the collimated optical path is formed between the light transmission hole and the photoelectric sensing element.
  • the light incident angle ⁇ arctan(d/2H)
  • H is the transmission The diameter of the light hole; H is inversely proportional to the distance from the light-transmitting hole to the photoelectric sensing element, and when H increases, the incident light angle becomes smaller; therefore, the display panel and electronic equipment provided by the application can reduce or eliminate the environment The incidence of stray light in the medium and make the reflected light incident on the photosensitive layer at a small right angle as possible to improve the signal-to-noise ratio.
  • FIG. 1 is a schematic diagram of modules of an electronic device provided by the present application.
  • FIG. 2 is a schematic diagram of film layers of a display panel provided in the first embodiment of the present application.
  • FIG. 3 is a schematic diagram of an optical path of the display panel shown in FIG. 2 .
  • FIG. 4 is a schematic diagram of the film layers of the display panel provided by the second embodiment of the present application.
  • FIG. 5 is a schematic diagram of the film layers of the display panel provided by the third embodiment of the present application.
  • This application aims at the technical problem of large signal-to-noise ratio in the existing fingerprint identification technology, by binding the first panel containing the light-emitting unit and the second panel containing the photoelectric sensing element together through a binding layer, and The photosensitive element is facing the light transmission hole on the pixel definition layer of the first panel, and the binding layer is located between the second panel and the first panel, so as to reduce or eliminate the incidence of stray light in the environment And make the reflected light incident on the photosensitive layer at a small right angle as much as possible, so as to improve the signal-to-noise ratio.
  • the electronic device 1000 includes a display panel 100 ( 200 ) and a device body 1001 , and the display panel 100 ( 200 ) is located on the device body 1001 or in the device body 1001 .
  • the electronic device may be a mobile phone or a computer.
  • the first embodiment of the present application provides a display panel 100
  • the display panel 100 includes a first panel 110, a second panel 120 and a binding layer 130
  • the first panel 110 and The second panels 120 are bound together through the binding layer 130 .
  • the binding layer 130 is located between the first panel 110 and the second panel 120 .
  • the first panel 110 includes a plurality of light-transmitting regions 1101 .
  • the first panel 110 includes a first substrate 10, a first driving circuit layer 20, a pixel definition layer 30, a light emitting unit 40 and a first encapsulation layer 50, and the first driving circuit layer 20 is formed on the first
  • the pixel definition layer 30 is formed on the first driving circuit layer 20
  • the light emitting unit 40 is accommodated in the pixel definition layer 30, and the first encapsulation layer 50 is formed on the
  • the pixel definition layer 30 is on and covers the light emitting unit 40 .
  • One of the light-transmitting regions 1101 is located between two adjacent light-emitting units 40 .
  • the first substrate 10 includes a plurality of first connection terminals 11, and the plurality of first connection terminals are embedded in the first substrate 10 and are away from the first drive from the substrate 10. The surface of the circuit layer 20 is exposed.
  • the first driving circuit layer 20 includes a first composite film layer 21 and a plurality of first driving transistors 22 embedded in the first composite film layer 21 .
  • the first driving transistor 22 drives the light emitting unit 40 to emit light.
  • the first composite film layer 21 is formed on the surface of the first substrate 10 away from the first connecting terminal 11 .
  • the first composite film layer 21 is composed of a plurality of insulating film layers (not numbered in the figure) such as a gate insulating layer, an interlayer insulating layer, and a planar layer.
  • One end of the first driving transistor 22 is electrically connected to the first connection terminal 11 .
  • each of the first driving transistors 22 includes a first active layer 221 formed on the surface of the first substrate 10 away from the first connecting terminal 11, formed on The first gate 222 above the first active layer 221, the second gate 223 formed above the first gate 222, and the first source-drain layer formed above the second gate 223 224.
  • first composite film layer 21 for example: a gate insulating layer
  • first active layer 221 and the first gate 222 there is a part of the first composite film layer 21 (for example: the first interlayer insulating layer) between the two gates 223, and there is a part of the second gate 223 and the first source-drain layer 224.
  • the first composite film layer 21 for example, a second interlayer insulating layer
  • a part of the first composite film layer 21 is placed above the first source-drain layer 224 .
  • each of the first driving transistors 22 may not include the second gate 223 .
  • the part of the first composite film layer 21 corresponding to the light-transmitting region 1101 is transparent.
  • the source and the drain of the first source-drain layer 224 are respectively electrically connected to the first active layer 221 through a first via hole 225 .
  • the source or drain of the first source-drain layer 224 is also electrically connected to the corresponding first connection terminal 11 through the second via hole 226 .
  • Both the first via hole 225 and the second via hole 226 are filled with conductive material.
  • the first composite film layer 21 (for example, a planar layer) above the first source-drain layer 224 further includes a plurality of anodes 227 .
  • One end of one anode 227 is electrically connected to one first source-drain layer 224 , and the other end is electrically connected to one light emitting unit 40 .
  • the pixel definition layer 30 includes an opaque portion and a light-transmitting portion, the opaque portion of the pixel definition layer 30 includes a plurality of pixel openings 31, and one of the light-emitting units 40 is accommodated in one of the pixel openings. within 31.
  • the light-transmitting part of the pixel definition layer 30 is located in the light-transmitting region 1101
  • the light-transmitting part of the pixel definition layer 30 includes a plurality of light-transmitting holes 32, and each of the light-transmitting holes 32 is located in two adjacent between the pixel openings 31.
  • the diameter of the transparent hole 32 is smaller than or equal to the diameter of the transparent region 1101 .
  • the light-transmitting holes 32 may be filled with light-transmitting materials, or may not be filled with other materials.
  • the pixel definition layer 30 is opaque so that the light reflected by the fingerprint can only enter the photoelectric sensor element 1201 (see below) through the light transmission hole 32, so that the light entering the photoelectric sensor element 1201 can be controlled. The amount of light and the angle are limited.
  • the pixel definition layer 30 is black.
  • each of the light-transmitting holes 32 and its opposite photoelectric sensing element 1201 are on the second driving circuit layer 80 (see below) of the second panel 120
  • the orthographic projections on are at least partially overlapping.
  • each of the light transmission holes 32 completely overlaps the orthographic projection of the opposite photoelectric sensing element 1201 (see below) on the second panel 120 .
  • the first panel 110 further includes a cathode layer 33 formed on the light emitting unit 40 and on the pixel definition layer 30 .
  • the first encapsulation layer 50 is formed on the pixel definition layer 30 and covers the cathode layer 33 .
  • the first panel 110 further includes an outer film layer 60 , and the outer film layer 60 is formed on the first encapsulation layer 50 .
  • the outer film layer 60 may be a touch layer, a protective layer or a flat layer or other film layers.
  • the outer film layer 60 is a touch layer.
  • the outer film layer 60 may be a single film layer or a plurality of film layers.
  • the second panel 120 includes a second substrate 70 , a second driving circuit layer 80 , a second packaging layer 90 and a plurality of photoelectric sensor elements 1201 .
  • the second driving circuit layer 80 is formed on the second substrate 70, a plurality of photosensor elements 1201 are formed on the second driving circuit layer 80, and the second encapsulation layer 90 is formed on the second substrate 70.
  • the second driving circuit layer 80 is covered with a plurality of photosensitive elements 1201 .
  • the binding layer 130 is formed on the second encapsulation layer 90 .
  • a plurality of the photosensitive elements 1201 are respectively opposite to the plurality of the light-transmitting regions 1101 or the light-transmitting holes 32, and each of the light-transmitting holes 32 is opposite to the corresponding photoelectric sensing elements 1201.
  • the orthographic projections on the second driving circuit layer 80 of the second panel 120 are at least partially overlapped.
  • the photoelectric sensing element 1201 is an organic photodetection device (OPD).
  • OPD organic photodetection device
  • the photoelectric sensing element 1201 may also be a detection device or a photoelectric sensing device other than the OPD, such as Si-PD and other types of detectors.
  • the second drive circuit layer 80 includes a second composite film layer 81 and a plurality of third drive circuits embedded in the second composite film layer 81.
  • a transistor 82 and a plurality of second driving transistors 83 are included in the second composite film layer 81.
  • the third driving transistor 82 is electrically connected to the first driving transistor 22, and the third driving transistor 82 is used to transmit a driving signal to the first driving transistor 22 to drive the first panel.
  • the light emitting unit 40 emits light.
  • the second driving transistor 83 and the first driving transistor 22 are respectively located in two different panels and are bound together in a way of splicing a sub-motherboard, and the second driving transistor 83 does not occupy the area of the border area , which can effectively reduce the area of the peripheral circuit, so that a narrow frame can be realized.
  • the second composite film layer 81 is formed by compounding multiple insulating film layers (not labeled) including a gate insulating layer, an interlayer insulating layer, and a planar layer.
  • the second driving transistor 83 is electrically connected to the photoelectric sensing element 1201 .
  • the third driving transistor 82 and the second driving transistor 83 are independent of each other and have no electrical connection.
  • the third driving transistor 82 is used for transmitting a driving signal to the first driving transistor 22 to drive the light emitting unit 40 to emit light.
  • the second driving transistor 83 is used to drive the photoelectric sensing element 1201 to work.
  • each of the third driving transistors 82 includes a second active layer 821 formed on the second substrate 70 , a second active layer 821 formed above the second active layer 821 Three gates 822, a fourth gate 823 formed above the third gate 822, and a second source-drain layer 824 formed above the fourth gate 823, the second source-drain layer 824 It is electrically connected with the second active layer 821 through the third via hole 825 .
  • the second composite film layer 81 for example: a gate insulating layer between the second active layer 821 and the third gate 822, and the third gate 822 and the first gate 822
  • the second composite film layer 81 for example: the third interlayer insulating layer
  • the second composite film layer 81 (for example, a fourth interlayer insulating layer), and a part of the second composite film layer 81 (for example, a planar layer) is located above the second source and drain layer 824 .
  • each of the third driving transistors 82 may not include the fourth gate 823 .
  • the part of the second encapsulation layer 90 corresponding to the light-transmitting region 1101 is light-transmitting.
  • the second packaging layer 90 includes a plurality of fourth via holes 91 and a plurality of third connection terminals 92 .
  • a plurality of fourth via holes 91 and a plurality of third connection terminals 92 are embedded in the second packaging layer 90, and one end of the third connection terminal 92 is far from the second packaging layer 90.
  • the surface of the second driving circuit layer 80 is exposed.
  • the plurality of third connection terminals 92 are respectively electrically connected to the corresponding source and drain layers 824 of the third driving transistor 82 through the fourth via holes 91 .
  • the structure of the second driving transistor 83 is the same as that of the third driving transistor 82 , the difference is that the second driving transistor 83 is electrically connected to the photoelectric sensing element 1201 .
  • the binding layer 130 and the first composite film layer 21 and the second composite film layer 81 located in the light-transmitting region 1101 are light-transmitting.
  • the binding layer 130 is optical glue.
  • Optical glue has better light transmittance and can filter stray light well.
  • the thickness of the binding layer 130 is 52um-100um, in order to better reduce or eliminate the incidence of stray light in the environment and make the reflected light incident on the photoreceptor at a small right angle as much as possible. layers to improve the signal-to-noise ratio.
  • the binding layer 130 includes a plurality of through holes 131 filled with conductive material, and the two ends of one of the through holes 131 are respectively connected to the first connection terminal 11 and the third connection terminal 131.
  • the terminal 92 is electrically connected to communicate with the first driving transistor 22 and the corresponding third driving transistor 82 .
  • the touch layer when the touch layer is touched, a fingerprint will be formed on the touch layer, the light L1 emitted by the light emitting unit 40 is reflected by the fingerprint, and a part of the reflected light L2 can pass through the touch layer.
  • the light transmission hole 32 sequentially enters the first composite film layer 21 corresponding to the light transmission area 1101, the binding layer 130, and the second encapsulation layer 90 corresponding to the light transmission area 1101 to irradiate on the photoelectric sensing element 1201 .
  • the incident angle ⁇ of the light reflected by the fingerprint and the range m of the reflected light of the fingerprint can be adjusted.
  • light incident angle ⁇ arctan (d/2H), d is the diameter of described light-transmitting hole 32; Distance; wherein, the value range of H is: 90um-150um, the value range of d is: 25um-60um, and correspondingly, the value range of the incident light angle ⁇ is: 4.764°-18.434°.
  • the existence of the binding layer 130 increases the distance from the light transmission hole 32 to the photoelectric sensing element 1201 , that is, increases the size of H. It can be seen from the formula of the incident angle that the incident angle ⁇ is inversely proportional to H. When H increases, the incident angle becomes smaller. Therefore, the display panel 100 provided by the present application can reduce or eliminate the incidence of stray light in the environment and make the reflected light incident on the photosensitive layer at a small right angle as much as possible, thereby improving the signal-to-noise ratio.
  • the present application also provides another display panel 200 , which has basically the same structure as the display panel 100 , the only difference being that the display panel 200 also includes a plurality of lenses 140 .
  • the lenses 140 are arranged in an array and formed on the first encapsulation layer 50 and covered by the outer film layer 60 .
  • One lens 140 is opposite to one light transmission hole 32 .
  • the plurality of lenses 140 are micro lenses.
  • the lens 140 opposite to one of the light transmission holes 32 can converge the light reflected from the fingerprint above the photoelectric sensing element 1201 to the photoelectric sensing element 1201, thereby increasing the amount of incoming light.
  • the light entering the photoelectric sensing element 1201 is relatively sufficient, so that the aperture ratio of the first panel 110 can be reduced (that is, the number of light transmission holes can be reduced), and the performance of the display panel 200 can be improved.
  • the present application also provides another display panel 300 .
  • the structure of the display panel 300 is basically the same as that of the display panel 100 . The only difference is that the display panel 300 does not include the the third drive transistor.
  • the driving circuit for driving the light emitting unit of the first panel 110 to emit light is electrically connected to the first driving transistor and located in a frame area (not shown) of the first panel 110 of the display panel 300 .
  • the first panel including the light-emitting unit and the second panel including the photoelectric sensor element are bound together through a binding layer, and the photoelectric sensor element is facing the first panel.
  • the light transmission hole on the pixel definition layer of the panel, the presence of the binding layer increases the distance from the light transmission hole to the photoelectric sensing element, that is, increases the size of H, and then the distance between the light transmission hole and the photoelectric sensing element is increased.
  • An optical path similar to a collimated optical path is formed between the photoelectric sensing elements.
  • the display panel and the electronic device provided by the present application can reduce or eliminate the incident of stray light in the environment and make the reflected light incident on the photosensitive layer at a small right angle as much as possible, so as to improve the signal-to-noise ratio.
  • a third drive transistor is provided in the second panel to transmit the drive signal to the first drive transistor, and then drive the light emitting unit of the first panel to emit light, which does not occupy the area of the frame area and can effectively The area of the peripheral circuit is reduced, so that a narrow bezel can be realized.
  • the incident angle can also be regulated by adjusting the thickness of the binding layer, so that the signal-to-noise ratio of the display panel can be improved more flexibly according to actual needs.
  • a plurality of microlenses are coupled on the side of the first panel away from the second panel, which can converge the light reflected from the fingerprint above the photoelectric sensing element to the photoelectric sensing element, thereby improving the performance of the photoelectric sensing element.
  • the amount of light because the light entering the photoelectric sensing element is sufficient, the aperture ratio of the first panel can be reduced (that is, the number of light-transmitting holes can be reduced), and the performance of the display panel can be improved.
  • binding the first panel including the light-emitting unit and the second panel including the photoelectric sensing element together through a binding layer can also reduce process difficulty and improve yield.
  • the process route is a solution method or a small molecule evaporation method; at the same time, compared with preparing photoelectric sensing elements + first panel (such as OLED devices) at one time and preparing photoelectric sensing elements separately + Re-splicing of the first panel (such as OLED devices), the process difficulty can be reduced, and the yield rate can be improved.

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Abstract

本申请提供一种显示面板及电子设备，显示面板包括：第一面板，包括发光单元；第一面板还包括透光区；第二面板，包括光电传感元件及第二驱动电路层；第二驱动电路层包括第二驱动晶体管，第二驱动晶体管与光电传感元件电连接；光电传感元件与透光区相对；及绑定层，位于第一面板和第二面板之间且绑定连接第一面板及第二面板。

Description

显示面板及电子设备 技术领域
本申请涉及柔性显示技术领域，具体涉及一种显示面板及电子设备。
 背景技术
近年来，随着触控技术的高速发展，基于硅基工艺的按压式与滑动式指纹识别技术已经整合入移动产品中，未来人们关注的核心是显示区域内的指纹识别技术。
纹路识别原理如下：面板发出光线，光电传感器接收指纹谷部位置或脊部位置反射出的光线，并生成相应的电信号；由于谷部位置和脊部位置的反射有差异，因此生成的电信号也有差异，从而能够实现谷、脊的识别。
目前，指纹识别技术主要是利用光电传感器进行指纹图像的采集，但是现有指纹识别技术中存在信噪比较大的问题。
 技术问题
现有指纹识别技术中存在信噪比较大的问题。
 技术解决方案
有鉴于此，本申请提供一种能够减少或消除环境中杂光的入射并使得反射的光尽可能以小直角度入射到感光层，以提高信噪比的显示面板及电子装置。
本申请提供一种显示面板，包括：
第一面板，包括多个发光单元及第一驱动电路层，所述第一驱动电路层包括多个与所述发光单元分别电连接的第一驱动晶体管；所述第一面板还包括多个透光区，一个所述透光区位于相邻的两个所述发光单元之间；
第二面板，包括多个光电传感元件及第二驱动电路层；所述第二驱动电路层包括及多个第二驱动晶体管，所述第二驱动晶体管与所述光电传感元件电连接；所述光电传感元件与所述透光区位置相对；及
绑定层，位于所述第一面板和所述第二面板之间且绑定连接所述第一面板及所述第二面板。
在本申请一可选实施例中，所述绑定层透光。
在本申请一可选实施例中，所述绑定层为光学胶。
在本申请一可选实施例中，所述绑定层的厚度为52um-100um。
在本申请一可选实施例中，所述第一面板还包括第一驱动电路层及位于所述第一驱动电路层上的像素定义层，所述像素定义层包括透光部分和不透光部分，所述像素定义层的不透光部分包括多个像素开口，一个所述发光单元收容在一个所述像素开口内，所述像素定义层的透光部分位于所述透光区内，所述像素定义层的透光部分包括多个透光孔，每个所述透光孔位于相邻的两个所述像素开口之间。
在本申请一可选实施例中，所述像素定义层呈黑色。
在本申请一可选实施例中，每个所述透光孔与与之相对的所述光电传感元件在所述第二驱动电路层上的正投影至少部分重叠。
在本申请一可选实施例中，定义所述透光孔的直径为d，所述第一面板的所述透光孔的远离所述第二面板的一端到所述光电传感元件的距离为H，所述显示面板的入光角度为θ，则θ=arctan(d/2H)，其中，H的取值范围是：90um-150um，所述d的取值范围是：25um-60um。
在本申请一可选实施例中，所述第一面板还包括一第一衬底，所述第一驱动电路层形成在所述第一衬底上，所述发光单元形成在所述第一驱动电路层的远离所述第一衬底的一侧；所述绑定层位于所述第一衬底远离所述第一驱动电路层的一侧。
在本申请一可选实施例中，所述第一面板还包括一形成在所述像素定义层上且包覆所述发光单元的第一封装层及形成在所述第一封装层上的多个透镜，多个所述透镜呈阵列排布，一个所述透镜与一个所述透光区位置相对。
在本申请一可选实施例中，所述第二面板还包括一第二封装层，所述第二封装层形成在所述第二驱动电路层上且包覆所述光电传感元件；所述绑定层位于所述第二封装层远离所述第二驱动电路层的一侧。
在本申请一可选实施例中，所述第一面板还包括第一驱动电路层，所述第一驱动电路层包括多个与所述发光单元分别电连接的第一驱动晶体管；所述第二驱动电路层还包括多个第三驱动晶体管，所述第三驱动晶体管与所述第一驱动晶体管电连接。
在本申请一可选实施例中，所述绑定层上开设有多个通孔，每个所述通孔内填充有导电材料，一个所述第一驱动晶体管与与之对应的一个所述第三驱动晶体管通过一个所述通孔电连接。
在本申请一可选实施例中，所述光电传感元件是光电探测元件。
本申请还提供一种电子设备，包括设备主体，所述电子设备还包括一如上所述的显示面板，所述显示面板位于所述设备主体上或位于所述设备主体内。
 有益效果
本申请提供的显示面板及电子设备，将包含有发光单元的第一面板与包含有光电传感元件的第二面板通过一绑定层绑定在一起，绑定层位于第一面板和第二面板之间，并使得光电传感元件正对第一面板的像素定义层上的透光孔，所述绑定层可以增加并调控所述透光孔到所述光电传感元件的距离，进而在所述透光孔与所述光电传感元件之间形成一个近似于准直光路的光路，根据入光角度θ=arctan(d/2H)可知，入光角度与H(d为所述透光孔的直径；H为透光孔到所述光电传感元件的距离)呈反比，当H增加时，入光角度变小；因此，本申请提供的显示面板及电子设备能够减少或消除环境中杂光的入射并使得反射的光尽可能以小直角度入射到感光层，提高信噪比。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1为本申请实提供的一种电子设备的模块示意图。
图2为本申请第一实施例提供的一种显示面板的膜层示意图。
图3为图2所示的显示面板的光路示意图。
图4为本申请第二实施例提供的显示面板的膜层示意图。
图5为本申请第三实施例提供的显示面板的膜层示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要理解的是，术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
本申请可以在不同实施中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。
本申请针对现有指纹识别技术中信噪比较大的技术问题，通过将包含有发光单元的第一面板与包含有光电传感元件的第二面板通过一绑定层绑定在一起，并使得光电传感元件正对第一面板的像素定义层上的透光孔，所述绑定层位于所述第二面板和所述第一面板之间，以减少或消除环境中杂光的入射并使得反射的光尽可能以小直角度入射到感光层，提高信噪比。
请参阅图1，本申请较佳实施例提供了一种电子设备1000。所述电子设备1000包括一显示面板100(200)及设备主体1001，所述显示面板100(200)位于所述设备主体1001上或位于所述设备主体1001内。在本实施例中，所述电子装置可以是手机或计算机等。
请参阅图2及图3，本申请第一实施例提供了一种显示面板100，所述显示面板100包括第一面板110、第二面板120及绑定层130，所述第一面板110及所述第二面板120通过所述绑定层130绑定在一起。所述绑定层130位于所述第一面板110和所述第二面板120之间。其中，所述第一面板110包括多个透光区1101。
其中，所述第一面板110包括第一衬底10、第一驱动电路层20、像素定义层30、发光单元40及第一封装层50，所述第一驱动电路层20形成在所述第一衬底10上，所述像素定义层30形成在所述第一驱动电路层20上，所述发光单元40收容在所述像素定义层30内，所述第一封装层50形成在所述像素定义层30上且包覆所述发光单元40。一个所述透光区1101位于相邻的两个所述发光单元40之间。
其中，所述第一衬底10包括多个第一连接端子11，多个所述第一连接端子嵌在所述第一衬底10内且从所述衬底10的远离所述第一驱动电路层20的表面裸露出来。
其中，所述第一驱动电路层20包括一第一复合膜层21及嵌在所述第一复合膜层21内的多个第一驱动晶体管22。所述第一驱动晶体管22驱动所述发光单元40发光。
其中，所述第一复合膜层21形成在所述第一衬底10的远离所述第一连接端子11的表面上。所述第一复合膜层21包括栅极绝缘层、层间绝缘层及平坦层等多个绝缘膜层(图中未标号)复合形成。所述第一驱动晶体管22的一端与所述第一连接端子11电连接。具体地，在本实施例中，每个所述第一驱动晶体管22包括形成在所述第一衬底10的远离所述第一连接端子11的表面上的第一有源层221、形成在所述第一有源层221上方的第一栅极222、形成在所述第一栅极222上方的第二栅极223及形成在所述第二栅极223上方的第一源漏极层224。其中，所述第一有源层221及所述第一栅极222之间具有部分所述第一复合膜层21(例如：栅极绝缘层)，所述第一栅极222和所述第二栅极223之间具有部分所述第一复合膜层21(例如：第一层间绝缘层)，所述第二栅极223和所述第一源漏极层224之间具有部分所述第一复合膜层21(例如：第二层间绝缘层)，所述第一源漏极层224上方还具有部分所述第一复合膜层21(例如：平坦层)。在其他实施例中，每个所述第一驱动晶体管22还可以不包括第二栅极223。
其中，所述第一复合膜层21的对应所述透光区1101的部分透光。
其中，所述第一源漏极层224的源极和漏极分别通过一第一过孔225与所述第一有源层221电连接。所述第一源漏极层224的源极或漏极还通过第二过孔226与与之对应的所述第一连接端子11电连接。所述第一过孔225及所述第二过孔226中均填充有导电材料。
其中，所述第一源漏极层224上方的所述第一复合膜层21(例如：平坦层)还包括多个阳极227。一个所述阳极227的一端与一个所述第一源漏极层224电连接，另一端与一个所述发光单元40电连接。
具体地，所述像素定义层30包括不透光部分及透光部分，所述像素定义层30的不透光部分包括多个像素开口31，一个所述发光单元40收容在一个所述像素开口31内。所述像素定义层30的透光部分位于所述透光区1101内，所述像素定义层30的透光部分包括多个透光孔32，每个所述透光孔32位于相邻的两个所述像素开口31之间。所述透光孔32的直径小于或等于所述透光区1101的直径。所述透光孔32内可以填充透光材料，也可以不填充其他材料。其中，所述像素定义层30不透光可以使得经指纹反射的光只能从所述透光孔32进入光电传感元件1201(见下文)，从而可以对进入所述光电传感元件1201的光量和角度进行限制。
在本申请一可选实施例中，所述像素定义层30呈黑色。
在本申请一可选实施例中，每个所述透光孔32与与之相对的光电传感元件1201(见下文)在所述第二面板120的第二驱动电路层80(见下文)上的正投影至少部分重叠。优选地，每个所述透光孔32与与之相对的光电传感元件1201(见下文)在所述第二面板120上的正投影完全重叠。
其中，所述第一面板110还包括阴极层33，所述阴极层33形成在所述发光单元40上且形成在所述像素定义层30上。
其中，所述第一封装层50形成在所述像素定义层30上且包覆所述阴极层33。
其中，所述第一面板110还包括一外侧膜层60，所述外侧膜层60形成在所述第一封装层50上。
其中，所述外侧膜层60可以是触控层，也可以是保护层或平坦层或其他膜层。在本实施例中，所述外侧膜层60是触控层。
其中，所述外侧膜层60可以是单个膜层还可以是多个膜层。
其中，所述第二面板120包括第二衬底70、第二驱动电路层80、第二封装层90及多个光电传感元件1201。所述第二驱动电路层80形成在所述第二衬底70上，多个所述光电传感元件1201形成在所述第二驱动电路层80上，所述第二封装层90形成在所述第二驱动电路层80上且包覆多个所述光电传感元件1201。所述绑定层130形成在所述第二封装层90上。多个所述光电传感元件1201分别与多个所述透光区1101或所述透光孔32位置相对，每个所述透光孔32与与之相对的所述光电传感元件1201在所述第二面板120的所述第二驱动电路层80上的正投影至少部分重叠。
在本实施例中，所述光电传感元件1201为有机光电探测器件(OPD)。在其他实施例中，所述光电传感元件1201还可以为OPD之外的探测器件或光电传感器件，例如Si-PD等等类型的探测器。
请再次参阅图2，在本申请一可选实施例中，所述第二驱动电路层80包括一第二复合膜层81及嵌在所述第二复合膜层81内的多个第三驱动晶体管82及多个第二驱动晶体管83。
其中，所述第三驱动晶体管82与所述第一驱动晶体管22电连接，所述第三驱动晶体管82用于将驱动信号传递给所述第一驱动晶体管22，以驱动所述第一面板的所述发光单元40发光。所述第二驱动晶体管83与所述第一驱动晶体管22分别位于不同的两个面板内且以子母板拼接的方式绑定在一起，所述第二驱动晶体管83不会占用边框区域的面积，可以有效减少外围电路的面积，从而能够实现窄边框。
具体地，所述第二复合膜层81包括栅极绝缘层、层间绝缘层及平坦层等多个绝缘膜层(图未标号)复合形成。
其中，所述第二驱动晶体管83与所述光电传感元件1201电连接。所述第三驱动晶体管82与所述第二驱动晶体管83之间相互独立，不具有电连接关系。其中，所述第三驱动晶体管82用于将驱动信号传递给所述第一驱动晶体管22，以驱动发光单元40发光。所述第二驱动晶体管83用于驱动所述光电传感元件1201工作。
具体地，在本实施例中，每个所述第三驱动晶体管82包括形成在所述第二衬底70上的第二有源层821、形成在所述第二有源层821上方的第三栅极822、形成在所述第三栅极822上方的第四栅极823及形成在所述第四栅极823上方的第二源漏极层824，所述第二源漏极层824通过第三过孔825与所述第二有源层821电连接。其中，所述第二有源层821及所述第三栅极822之间具有部分所述第二复合膜层81(例如：栅极绝缘层)，所述第三栅极822和所述第四栅极823之间具有部分所述第二复合膜层81(例如：第三层间绝缘层)，所述第四栅极823和所述第二源漏极层824之间具有部分所述第二复合膜层81(例如：第四层间绝缘层)，所述第二源漏极层824上方还具有部分所述第二复合膜层81(例如：平坦层)。在其他实施例中，每个所述第三驱动晶体管82还可以不包括第四栅极823。
其中，所述第二封装层90的对应所述透光区1101的部分透光。
其中，所述第二封装层90包括多个第四过孔91及多个第三连接端子92。多个所述第四过孔91及多个所述第三连接端子92嵌在所述第二封装层90内，所述第三连接端子92的一端从所述第二封装层90的远离所述第二驱动电路层80的表面裸露出来。多个所述第三连接端子92通过所述第四过孔91分别与与之对应的所述第三驱动晶体管82的所述源漏极层824电连接。
其中，所述第二驱动晶体管83的结构与所述第三驱动晶体管82的结构相同，区别在于：所述第二驱动晶体管83与所述光电传感元件1201电连接。
其中，所述绑定层130及位于所述透光区1101内的所述第一复合膜层21及所述第二复合膜层81透光。
在本申请一可选实施例中，所述绑定层130为光学胶。光学胶的透光率较好，能够很好地过滤杂光。
在本申请一可选实施例中，所述绑定层130的厚度为52um-100um，以更好地减少或消除环境中杂光的入射并使得反射的光尽可能以小直角度入射到感光层，以提高信噪比。
其中，所述绑定层130包括多个通孔131，多个通孔131内填充有导电材料，一个所述通孔131的两端分别与所述第一连接端子11及所述第三连接端子92电连接，以连通所述第一驱动晶体管22及与之对应的所述第三驱动晶体管82。
请再次参阅图3，当所述触控层被触摸时，会在所述触控层上形成指纹，所述发光单元40发出的光L1被所述指纹反射，有一部分反射光L2可以通过所述透光孔32依次进入与所述透光区1101对应的所述第一复合膜层21、所述绑定层130及与所述透光区1101对应的所述第二封装层90照射到所述光电传感元件1201上。通过设置所述透光孔32的直径及所述绑定层130的厚度，可以调控经所述指纹反射的光的入射角度θ以及所述指纹的反射光的范围m。
其中，入光角度θ=arctan(d/2H)，d为所述透光孔32的直径；H为透光孔32的远离所述第二面板120的一端到所述光电传感元件1201的距离；其中，H的取值范围是：90um-150um，所述d的取值范围是：25um-60um，相应地，所述入光角度θ的取值范围是：4.764°-18.434°。所述绑定层130的存在增加了透光孔32到所述光电传感元件1201的距离，即增加了H的大小。由入光角度的公式可知，入光角度θ与H呈反比，当H增加时，入光角度变小。因此，本申请提供的显示面板100能够减少或消除环境中杂光的入射并使得反射的光尽可能以小直角度入射到感光层，提高信噪比。
请参阅图4，本申请还提供另一种显示面板200，所述显示面板200与所述显示面板100的结构基本相同，其区别仅在于，所述显示面板200还包括多个透镜140，多个所述透镜140呈阵列排布且形成在所述第一封装层50上并被所述外侧膜层60包覆。一个所述透镜140与一个所述透光孔32位置相对。
在本实施例中，所述多个透镜140为微透镜。
其中，与一个所述透光孔32位置相对的所述透镜140能够会聚自指纹反射的位于所述光电传感元件1201上方的光线至所述光电传感元件1201，从而能够提高进光量，因进入所述光电传感元件1201的光较充足，从而能够减少所述第一面板110的开口率(即可以减少透光孔的数量)，提升显示面板200的性能。
请参阅图5，本申请还提供另一种显示面板300，所述显示面板300与所述显示面板100的结构基本相同，其区别仅在于，所述显示面板300不包括所述显示面板100中的第三驱动晶体管。驱动所述第一面板110的发光单元发光的驱动电路与所述第一驱动晶体管电连接且位于所述显示面板300的第一面板110的边框区域(图未示)内。
本申请提供的显示面板及电子设备，将包含有发光单元的第一面板与包含有光电传感元件的第二面板通过一绑定层绑定在一起，并使得光电传感元件正对第一面板的像素定义层上的透光孔，所述绑定层的存在增加了透光孔到所述光电传感元件的距离，即增加了H的大小，进而在所述透光孔与所述光电传感元件之间形成一个近似于准直光路的光路。由入光角度的公式θ=arctan(d/2H)可知，入光角度与H(d为所述透光孔的直径；H为透光孔到所述光电传感元件的距离)呈反比，当H增加时，入光角度变小。因此，本申请提供的显示面板及电子设备能够减少或消除环境中杂光的入射并使得反射的光尽可能以小直角度入射到感光层，以提高信噪比。另外，在第二面板内设置第三驱动晶体管，以将驱动信号传递给所述第一驱动晶体管，进而驱动所述第一面板的所述发光单元发光，不会占用边框区域的面积，可以有效减少外围电路的面积，从而能够实现窄边框。
另外，还可以通过调整所述绑定层的厚度，来调控所述入射角度的大小，从而能够根据实际需要更灵活地提高显示面板的信噪比。
另外，在第一面板的远离所述第二面板的一侧耦合多个微透镜，能够会聚自指纹反射的位于所述光电传感元件上方的光线至所述光电传感元件，从而能够提高进光量，因进入所述光电传感元件的光较充足，从而能够减少所述第一面板的开口率(即可以减少透光孔的数量)，提升显示面板的性能。
另外，将包含有发光单元的第一面板与包含有光电传感元件的第二面板通过一绑定层绑定在一起，还可以降低工艺难度，提高良率。尤其对光电传感元件的制作，可不限制其工艺路线是溶液法还是小分子蒸镀法；同时相较于一次制备光电传感元件+第一面板(例如OLED器件)和分开制备光电传感元件+第一面板(例如OLED器件)再拼接，其工艺难度可降低，其良率可提高。
以上对本申请实施例所提供的显示面板及电子设备进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种显示面板，其中，包括：
    第一面板，包括多个发光单元；所述第一面板还包括多个透光区，一个所述透光区位于相邻的两个所述发光单元之间；
    第二面板，包括多个光电传感元件及第二驱动电路层；所述第二驱动电路层包括多个第二驱动晶体管，所述第二驱动晶体管与所述光电传感元件电连接；所述光电传感元件与所述透光区位置相对；及
    绑定层，位于所述第一面板和所述第二面板之间且绑定连接所述第一面板及所述第二面板。
  2. 如权利要求1所述的显示面板，其中，所述绑定层透光。
  3. 如权利要求2所述的显示面板，其中，所述绑定层为光学胶。
  4. 如权利要求2所述的显示面板，其中，所述绑定层的厚度为52um-100um。
  5. 如权利要求1所述的显示面板，其中，所述第一面板还包括第一驱动电路层及位于所述第一驱动电路层上的像素定义层，所述像素定义层包括透光部分和不透光部分，所述像素定义层的不透光部分包括多个像素开口，一个所述发光单元收容在一个所述像素开口内，所述像素定义层的透光部分位于所述透光区内，所述像素定义层的透光部分包括多个透光孔，每个所述透光孔位于相邻的两个所述像素开口之间。
  6. 如权利要求5所述的显示面板，其中，所述像素定义层呈黑色。
  7. 如权利要求5所述的显示面板，其中，每个所述透光孔与与之相对的所述光电传感元件在所述第二驱动电路层上的正投影至少部分重叠。
  8. 如权利要求5所述的显示面板，其中，定义所述透光孔的直径为d，所述第一面板的所述透光孔的远离所述第二面板的一端到所述光电传感元件的距离为H，所述显示面板的入光角度为θ，则θ=arctan(d/2H)，其中，H的取值范围是：90um-150um，所述d的取值范围是：25um-60um。
  9. 如权利要求5所述的显示面板，其中，所述第一面板还包括一第一衬底，所述第一驱动电路层形成在所述第一衬底上，所述发光单元形成在所述第一驱动电路层的远离所述第一衬底的一侧；所述绑定层位于所述第一衬底远离所述第一驱动电路层的一侧。
  10. 如权利要求5所述的显示面板，其中，所述第一面板还包括一形成在所述像素定义层上且包覆所述发光单元的第一封装层及形成在所述第一封装层上的多个透镜，多个所述透镜呈阵列排布，一个所述透镜与一个所述透光区位置相对。
  11. 如权利要求1所述的显示面板，其中，所述第二面板还包括一第二封装层，所述第二封装层形成在所述第二驱动电路层上且包覆所述光电传感元件；所述绑定层位于所述第二封装层远离所述第二驱动电路层的一侧。
  12. 如权利要求5所述的显示面板，其中，所述第一驱动电路层包括多个与所述发光单元分别电连接的第一驱动晶体管；所述第二驱动电路层还包括多个第三驱动晶体管，所述第三驱动晶体管与所述第一驱动晶体管电连接。
  13. 如权利要求12所述的显示面板，其中，所述绑定层上开设有多个通孔，每个所述通孔内填充有导电材料，一个所述第一驱动晶体管与与之对应的一个所述第三驱动晶体管通过一个所述通孔电连接。
  14. 如权利要求1所述的显示面板，其中，所述光电传感元件是光电探测元件。
  15. 一种电子设备，包括设备主体，其中，所述电子设备还包括一显示面板，所述显示面板位于所述设备主体上或位于所述设备主体内；所述显示面板包括：
    第一面板，包括多个发光单元；所述第一面板还包括多个透光区，一个所述透光区位于相邻的两个所述发光单元之间；
    第二面板，包括多个光电传感元件及第二驱动电路层；所述第二驱动电路层包括多个第二驱动晶体管，所述第二驱动晶体管与所述光电传感元件电连接；所述光电传感元件与所述透光区位置相对；及
    绑定层，位于所述第一面板和所述第二面板之间且绑定连接所述第一面板及所述第二面板。
  16. 如权利要求15所述的电子设备，其中，所述绑定层透光，所述绑定层的厚度为52-100um。
  17. 如权利要求15所述的电子设备，其中，所述第一面板还包括第一驱动电路层及位于所述第一驱动电路层上的像素定义层，所述像素定义层包括透光部分和不透光部分，所述像素定义层的不透光部分包括多个像素开口，一个所述发光单元收容在一个所述像素开口内，所述像素定义层的透光部分位于所述透光区内，所述像素定义层的透光部分包括多个透光孔，每个所述透光孔位于相邻的两个所述像素开口之间。
  18. 如权利要求17所述的电子设备，其中，所述第一面板还包括一形成在所述像素定义层上且包覆所述发光单元的第一封装层及形成在所述第一封装层上的多个透镜，多个所述透镜呈阵列排布，一个所述透镜与一个所述透光区位置相对。
  19. 如权利要求17所述的电子设备，其中，所述第一驱动电路层包括多个与所述发光单元分别电连接的第一驱动晶体管；所述第二驱动电路层还包括多个第三驱动晶体管，所述第三驱动晶体管与所述第一驱动晶体管电连接。
  20. 如权利要求17所述的电子设备，其中，所述像素定义层呈黑色。
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